KR20090005302A - 고품질 표면을 생성하기 위한 방법과 고품질 표면을 가진 제품 - Google Patents
고품질 표면을 생성하기 위한 방법과 고품질 표면을 가진 제품 Download PDFInfo
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- KR20090005302A KR20090005302A KR1020087023267A KR20087023267A KR20090005302A KR 20090005302 A KR20090005302 A KR 20090005302A KR 1020087023267 A KR1020087023267 A KR 1020087023267A KR 20087023267 A KR20087023267 A KR 20087023267A KR 20090005302 A KR20090005302 A KR 20090005302A
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- 238000000034 method Methods 0.000 title claims abstract description 105
- 238000000576 coating method Methods 0.000 claims abstract description 101
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 239000011248 coating agent Substances 0.000 claims abstract description 73
- 238000000608 laser ablation Methods 0.000 claims abstract description 55
- 239000002245 particle Substances 0.000 claims abstract description 49
- 239000000463 material Substances 0.000 claims description 119
- 229910052751 metal Inorganic materials 0.000 claims description 52
- 239000002184 metal Substances 0.000 claims description 52
- 238000002679 ablation Methods 0.000 claims description 42
- 239000004575 stone Substances 0.000 claims description 42
- 239000002131 composite material Substances 0.000 claims description 32
- 239000011521 glass Substances 0.000 claims description 25
- 150000002736 metal compounds Chemical class 0.000 claims description 25
- 229920000642 polymer Polymers 0.000 claims description 23
- 239000000919 ceramic Substances 0.000 claims description 22
- 229920005615 natural polymer Polymers 0.000 claims description 22
- 229920001059 synthetic polymer Polymers 0.000 claims description 21
- 239000000178 monomer Substances 0.000 claims description 20
- 150000001875 compounds Chemical class 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 8
- 238000004630 atomic force microscopy Methods 0.000 claims description 5
- 241000446313 Lamella Species 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 abstract description 10
- 210000002381 plasma Anatomy 0.000 description 70
- 239000010432 diamond Substances 0.000 description 60
- 229910003460 diamond Inorganic materials 0.000 description 59
- 238000004519 manufacturing process Methods 0.000 description 49
- 239000000835 fiber Substances 0.000 description 41
- 239000010408 film Substances 0.000 description 29
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 26
- 239000013077 target material Substances 0.000 description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 15
- 230000003287 optical effect Effects 0.000 description 15
- 229910052782 aluminium Inorganic materials 0.000 description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- 150000002739 metals Chemical class 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 14
- 229910052799 carbon Inorganic materials 0.000 description 13
- 230000005855 radiation Effects 0.000 description 13
- 230000033001 locomotion Effects 0.000 description 9
- 239000011859 microparticle Substances 0.000 description 9
- 230000008016 vaporization Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 238000004381 surface treatment Methods 0.000 description 8
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 8
- 238000009834 vaporization Methods 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000002105 nanoparticle Substances 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 238000005299 abrasion Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 239000000123 paper Substances 0.000 description 6
- 239000004033 plastic Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000003754 machining Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000011364 vaporized material Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 239000012634 fragment Substances 0.000 description 4
- 239000004579 marble Substances 0.000 description 4
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 4
- 239000002296 pyrolytic carbon Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000005482 strain hardening Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000010146 3D printing Methods 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 150000001247 metal acetylides Chemical class 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000000049 pigment Substances 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000004549 pulsed laser deposition Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229920001661 Chitosan Polymers 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 210000000988 bone and bone Anatomy 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000000593 degrading effect Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000004049 embossing Methods 0.000 description 2
- 239000010437 gem Substances 0.000 description 2
- 229910001751 gemstone Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229940127554 medical product Drugs 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- -1 polysiloxane Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000003678 scratch resistant effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical class [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 208000000474 Poliomyelitis Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- SJKRCWUQJZIWQB-UHFFFAOYSA-N azane;chromium Chemical compound N.[Cr] SJKRCWUQJZIWQB-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000011111 cardboard Substances 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 description 1
- UOUJSJZBMCDAEU-UHFFFAOYSA-N chromium(3+);oxygen(2-) Chemical class [O-2].[O-2].[O-2].[Cr+3].[Cr+3] UOUJSJZBMCDAEU-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000004624 confocal microscopy Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000002389 environmental scanning electron microscopy Methods 0.000 description 1
- 239000002657 fibrous material Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229940084434 fungoid Drugs 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000010438 granite Substances 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000010929 jewellery material Substances 0.000 description 1
- 238000010147 laser engraving Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000005555 metalworking Methods 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical class [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical class [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical class [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 235000012736 patent blue V Nutrition 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 239000011941 photocatalyst Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical class [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
- 229910003470 tongbaite Inorganic materials 0.000 description 1
- 238000007514 turning Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
- 230000035899 viability Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
- C23C14/0611—Diamond
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/087—Oxides of copper or solid solutions thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/12—Organic material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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Abstract
Description
Claims (44)
- 하나 이상의 표면을 구비한 물체를 코팅하기 위한 레이저 삭마 방법에 있어서,코팅된 물체, 즉 기판은 펄스 냉간 가공 레이저(pulsed cold work laser)에 의해서 타겟을 삭마함으로써 코팅되어서 코팅된 물체에 부착된 표면의 균일도가 원자간력 현미경(AFM)에 의해 1 ㎛2 면적에서 측정될 때 ± 100 nm인 것을 특징으로 하는 레이저 삭마 방법.
- 제1항에 있어서,코팅된 물체에 부착된 표면의 균일도는 ± 25 nm인 것을 특징으로 하는 레이저 삭마 방법.
- 제1항 또는 제2항에 있어서,코팅된 물체에 부착된 표면의 균일도는 ± 2 nm인 것을 특징으로 하는 레이저 삭마 방법.
- 제1항 내지 제3항 중 어느 한 항에 있어서,코팅된 물체는 1 ㎛이상의 직경을 가지는 입자를 포함하지 않는 것을 특징으 로 하는 레이저 삭마 방법.
- 제1항 내지 제4항 중 어느 한 항에 있어서,코팅된 물체는 100 nm이상의 직경을 가지는 입자를 포함하지 않는 것을 특징으로 하는 레이저 삭마 방법.
- 제1항 내지 제5항 중 어느 한 항에 있어서,코팅된 물체는 25 nm이상의 직경을 가지는 입자를 포함하지 않는 것을 특징으로 하는 레이저 삭마 방법.
- 선행하는 청구항 중 어느 한 항에 있어서,기판은 금속, 금속 화합물, 유리, 석재, 세라믹, 합성 중합체, 반합성 중합체, 천연 중합체, 종이, 복합 재료, 무기 또는 유기 단량체 또는 저중합체 재료로 만들어지는 것을 특징으로 하는 레이저 삭마 방법.
- 선행하는 청구항 중 어느 한 항에 있어서,타겟은 금속, 금속 화합물, 유리, 석재, 세라믹, 합성 중합체, 반합성 중합체, 천연 중합체, 복합 재료, 무기 또는 유기 단량체 또는 저중합체 재료로 만들어지는 것을 특징으로 하는 레이저 삭마 방법.
- 제1항에 있어서,레이저 장치의 출력은 적어도 10 W인 것을 특징으로 하는 레이저 삭마 방법.
- 제1항 또는 제9항에 있어서,레이저 장치의 출력은 적어도 20 W인 것을 특징으로 하는 레이저 삭마 방법.
- 제1항, 제9항 또는 제10항 중 어느 한 항에 있어서,레이저 장치의 출력은 적어도 50 W인 것을 특징으로 하는 레이저 삭마 방법.
- 선행하는 청구항 중 어느 한 항에 있어서,레이저 삭마는 10-1 내지 10-12 기압의 진공에서 수행되는 것을 특징으로 하는 레이저 삭마 방법.
- 제12항을 제외한 선행하는 청구항 중 어느 한 항에 있어서,레이저 삭마는 통상의 대기압에서 수행되는 것을 특징으로 하는 레이저 삭마 방법.
- 제1항에 있어서,타겟은 레이저 빔에 의해서 삭마되어, 재료가 이전에는 식별될 정도로 삭마 되지 않았던 타겟의 부위로부터 본질적으로 연속적으로 증기화되는 것을 특징으로 하는 레이저 삭마 방법.
- 제14항에 있어서,타겟은 라멜라 공급방식(lamella feed)으로서 공급되는 것을 특징으로 하는 레이저 삭마 방법.
- 제14항에 있어서,타겟은 라멜라 필름/테이프 공급방식으로서 공급되는 것을 특징으로 하는 레이저 삭마 방법.
- 제16항에 있어서,타겟 두께는 5 ㎛ 내지 5 mm이고, 바람직하게는 20 ㎛ 내지 1 mm이고, 보다 바람직하게는 50 ㎛ 내지 200 ㎛인 것을 특징으로 하는 레이저 삭마 방법.
- 제1항에 있어서,레이저 빔은 터빈 스캐너를 통해서 타겟으로 지향되는 것을 특징으로 하는 레이저 삭마 방법.
- 제18항에 있어서,타겟으로 지향된 스캐닝 폭은 10 mm 내지 800 mm, 바람직하게는 100 mm 내지 400 mm, 보다 바람직하게는 150 mm 내지 300 mm인 것을 특징으로 하는 레이저 삭마 방법.
- 제1항에 있어서,기판은 레이저 삭마에 의해서 하나 이상의 타겟으로부터 증기화된 플라즈마 기둥(plasma plume)에서 이동되는 것을 특징으로 하는 레이저 삭마 방법.
- 제1항에 있어서,타겟과 기판 사이의 거리는 삭마 공정에 걸쳐서 본질적으로 일정하게 유지되는 것을 특징으로 하는 레이저 삭마 방법.
- 제1항에 있어서,코팅된 표면은 다수의 타겟들로부터 동시에 삭마된 재료로 형성되는 것을 특징으로 하는 레이저 삭마 방법.
- 제1항 또는 제22항에 있어서,코팅된 표면은, 삭마된 재료로 형성된 플라즈마 기둥에서, 플라즈마 기둥에 포함된 삭마된 재료와 반응하는 반응성 재료가 가져와지도록 형성되고, 생성된 화합물 또는 화합물들은 기판에 생성된 표면을 형성하는 것을 특징으로 하는 레이저 삭마 방법.
- 제1항에 있어서,코팅된 표면은, 상기 표면이 1mm2당 1개 이하의 핀홀(pinhole), 바람직하게는 cm2 당 1개 이하의 핀홀을 포함하도록, 보다 바람직하게는 전체 코팅된 면적에 핀홀을 전혀 포함하지 않도록 생성되는 것을 특징으로 하는 레이저 삭마 방법.
- 제1항에 있어서,코팅되는 표면의 최초 50%가 생성된 표면에서 1000 nm 이상의 직경을 가지는 입자가 생성되지 않도록, 바람직하게는 상기 입자의 크기가 100 nm를 초과하지 않도록, 보다 바람직하게는 상기 입자의 크기가 30 nm를 초과하지 않게 생성되도록 표면이 형성되는 것을 특징으로 하는 레이저 삭마 방법.
- 하나 이상의 표면을 구비한 레이저 삭마 방법에 의해서 코팅된 물체에 있어서,코팅되는 물체, 즉 기판은 펄스 냉간 가공 레이저(pulsed cold work laser)에 의해서 타겟을 삭마함으로써 코팅되어 코팅된 물체에 부착된 표면의 균일도가 원자간력 현미경(AFM)에 의해 1 ㎛2 면적에서 측정될 때 ± 100 nm인 것을 특징으로 하는 물체.
- 제26항에 있어서,코팅된 물체에 부착된 표면의 균일도는 ± 25 nm인 것을 특징으로 하는 물체.
- 제26항 또는 제27항에 있어서,코팅된 물체에 부착된 표면의 균일도는 ± 2 nm인 것을 특징으로 하는 물체.
- 제26항 내지 제28항 중 어느 한 항에 있어서,물체의 코팅된 표면에는 1 ㎛이상의 직경을 가지는 입자가 없는 것을 특징으로 하는 물체.
- 제26항 내지 제29항 중 어느 한 항에 있어서,물체의 코팅된 표면에는 100 nm이상의 직경을 가지는 입자가 없는 것을 특징으로 하는 물체.
- 제26항 내지 제30항 중 어느 한 항에 있어서,물체의 코팅된 표면에는 25 nm이상의 직경을 가지는 입자가 없는 것을 특징으로 하는 물체.
- 선행하는 청구항 중 어느 한 항에 있어서,코팅된 기판은 금속, 금속 화합물, 유리, 석재, 세라믹, 합성 중합체, 반합성 중합체, 천연 중합체, 종이, 복합 재료, 무기 또는 유기 단량체 또는 저중합체 재료로 만들어지는 것을 특징으로 하는 물체.
- 선행하는 청구항 중 어느 한 항에 있어서,삭마된 타겟은 금속, 금속 화합물, 유리, 석재, 세라믹, 합성 중합체, 반합성 중합체, 천연 중합체, 종이, 복합 재료, 무기 또는 유기 단량체 또는 저중합체 재료로 만들어지는 것을 특징으로 하는 물체.
- 선행하는 청구항 중 어느 한 항에 있어서,레이저 삭마는 10-1 내지 10-12 기압의 진공에서 수행되는 것을 특징으로 하는 물체.
- 선행하는 청구항 중 어느 한 항에 있어서,레이저 삭마는 통상의 대기압에서 수행되는 것을 특징으로 하는 물체.
- 제26항에 있어서,레이저 빔은 터빈 스캐너를 통해서 타겟으로 지향되는 것을 특징으로 하는 물체.
- 제35항에 있어서,타겟으로 지향된 스캐닝 폭과 기판, 즉 코팅된 물체의 코팅 폭은 10 mm 내지 800 mm, 바람직하게는 100 mm 내지 400 mm, 보다 바람직하게는 150 mm 내지 300 mm인 것을 특징으로 물체.
- 제26항에 있어서,기판은 하나 이상의 타겟으로부터 증기화된 플라즈마 기둥(plasma plume)에서 레이저 삭마에 의해서 이동되는 것을 특징으로 물체.
- 제26항에 있어서,타겟과 기판 사이의 거리는 삭마 공정 전체에 걸쳐서 본질적으로 일정하게 유지되는 것을 특징으로 하는 물체.
- 제26항에 있어서,코팅된 표면은 다수의 타겟들로부터 동시에 삭마된 재료로 형성되는 것을 특징으로 하는 물체.
- 제26항 또는 제40항에 있어서,코팅된 표면은, 삭마된 재료로 형성된 플라즈마 기둥에서, 플라즈마 기둥에 포함된 재료와 반응하는 반응성 재료가 가져와지도록 형성되고, 생성된 화합물 또는 화합물들은 기판에 생성된 표면을 형성하는 것을 특징으로 하는 물체.
- 제26항에 있어서,코팅된 표면은 1mm2당 1개 이하의 핀홀(pinhole), 바람직하게는 cm2 당 1개 이하의 핀홀을 포함하고, 보다 바람직하게는 전체 코팅된 면적에 핀홀을 전혀 포함하지 않도록 생성되는 것을 특징으로 물체.
- 제26항에 있어서,코팅된 표면의 최초 50%가 생성된 표면에서 1000 nm 이상의 직경을 가지는 입자가 생성되지 않도록, 바람직하게는 상기 입자의 크기가 100 nm를 초과하지 않도록, 보다 바람직하게는 상기 입자의 크기가 30 nm를 초과하지 않게 생성되도록 표면이 형성되는 것을 특징으로 하는 레이저 삭마 방법.
- 제26항에 있어서,타겟은, 재료가 이전에는 식별될 정도로 삭마되지 않았던 타겟의 부위로부터 본질적으로 연속적으로 증기화되도록 레이저 빔에 의해서 삭마되는 것을 특징으로 하는 물체.
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PCT/FI2007/000046 WO2007096461A2 (en) | 2006-02-23 | 2007-02-23 | Method for producing high-quality surfaces and a product having a high-quality surface |
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KR101395425B1 (ko) * | 2006-02-23 | 2014-05-15 | 피코데온 리미티드 오와이 | 유리 기재 상의 코팅 및 코팅된 유리 제품 |
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-
2006
- 2006-02-23 FI FI20060177A patent/FI20060177L/fi not_active IP Right Cessation
-
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- 2007-02-23 KR KR1020087023267A patent/KR101367839B1/ko not_active IP Right Cessation
- 2007-02-23 CN CNA2007800063615A patent/CN101389439A/zh active Pending
- 2007-02-23 CN CN200780006700.XA patent/CN101389441B/zh not_active Expired - Fee Related
- 2007-02-23 US US12/224,316 patent/US20090169871A1/en not_active Abandoned
- 2007-02-23 RU RU2008137493/02A patent/RU2435871C2/ru not_active IP Right Cessation
- 2007-02-23 JP JP2008555814A patent/JP5437640B2/ja not_active Expired - Fee Related
- 2007-02-23 WO PCT/FI2007/000046 patent/WO2007096461A2/en active Application Filing
- 2007-02-23 CN CN200780006479.8A patent/CN101389440B/zh not_active Expired - Fee Related
- 2007-02-23 CN CNA2007800103487A patent/CN101421071A/zh active Pending
- 2007-02-23 EP EP07704813A patent/EP1991386A2/en not_active Withdrawn
-
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Also Published As
Publication number | Publication date |
---|---|
CN101389439A (zh) | 2009-03-18 |
CN101389440B (zh) | 2014-10-15 |
RU2435871C2 (ru) | 2011-12-10 |
CN101389440A (zh) | 2009-03-18 |
WO2007096461A2 (en) | 2007-08-30 |
US20090169871A1 (en) | 2009-07-02 |
FI20060177A0 (fi) | 2006-02-23 |
IL193646A0 (en) | 2009-05-04 |
RU2008137493A (ru) | 2010-03-27 |
CN101389441B (zh) | 2014-09-10 |
CN101389441A (zh) | 2009-03-18 |
JP2009527642A (ja) | 2009-07-30 |
WO2007096461A3 (en) | 2007-10-18 |
CN101421071A (zh) | 2009-04-29 |
KR101367839B1 (ko) | 2014-03-14 |
JP5437640B2 (ja) | 2014-03-12 |
EP1991386A2 (en) | 2008-11-19 |
FI20060177L (fi) | 2007-08-24 |
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