KR20070012574A - 원료 가스와 반응성 가스를 사용하는 처리 장치 - Google Patents
원료 가스와 반응성 가스를 사용하는 처리 장치 Download PDFInfo
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- KR20070012574A KR20070012574A KR1020077001030A KR20077001030A KR20070012574A KR 20070012574 A KR20070012574 A KR 20070012574A KR 1020077001030 A KR1020077001030 A KR 1020077001030A KR 20077001030 A KR20077001030 A KR 20077001030A KR 20070012574 A KR20070012574 A KR 20070012574A
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- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
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- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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Abstract
Description
Claims (13)
- 내부에 피 처리체를 수용하는 처리 용기와,상기 처리 용기내로 원료 가스를 선택적으로 공급하는 원료 가스 공급계와,상기 처리 용기내로 반응성 가스를 선택적으로 공급하는 반응성 가스 공급계와,상기 처리 용기내의 분위기를 진공 배기하기 위한, 진공 펌프를 갖는 진공 배기계와,상기 원료 가스 공급계와 상기 반응성 가스 공급계 중 어느 일방으로부터 상기 처리 용기를 우회해서 상기 진공 배기계에 접속된 가스 바이패스계와,상기 가스 바이패스계에 설치된, 가스를 일시적으로 저장해 두기 위한 가스 버퍼 탱크와,상기 가스 바이패스계에 있어서, 상기 가스 버퍼 탱크와 상기 진공 배기계 사이에 설치된 개폐 밸브를 구비한 것을 특징으로 하는처리 장치.
- 제 1 항에 있어서,상기 진공 배기계에 상기 원료 가스와 상기 반응성 가스가 동시에 흘러 들어오지 않도록, 상기 원료 가스 공급계, 상기 반응성 가스 공급계 및 상기 개폐 밸브를 제어하는 가스 공급 제어부를 더 구비한 것을 특징으로 하는처리 장치.
- 제 1 항에 있어서,상기 반응성 가스는 환원 가스인 것을 특징으로 하는처리 장치.
- 제 1 항에 있어서,상기 반응성 가스는 산화 가스인 것을 특징으로 하는처리 장치.
- 제 1 항에 있어서,상기 원료 가스는 WF6 가스이며, 상기 반응성 가스는 SiH4 가스인 것을 특징으로 하는처리 장치.
- 내부에 피 처리체를 수용하는 처리 용기와,상기 처리 용기내로 원료 가스를 선택적으로 공급하는 원료 가스 공급계와,상기 처리 용기내로 반응성 가스를 선택적으로 공급하는 반응성 가스 공급계와,상기 처리 용기내의 분위기를 진공 배기하기 위한, 진공 펌프를 갖는 진공 배기계와,상기 원료 가스 공급계로부터 상기 처리 용기를 우회해서 상기 진공 배기계에 접속된 원료 가스 바이패스계와,상기 원료 가스 바이패스계에 설치된, 원료 가스를 일시적으로 저장해 두기 위한 원료 가스 버퍼 탱크와,상기 원료 가스 바이패스계에 있어서, 상기 원료 가스 버퍼 탱크와 상기 진공 배기계 사이에 설치된 제 1 개폐 밸브와,상기 반응성 가스 공급계로부터 상기 처리 용기를 우회해서 상기 진공 배기계에 접속된 반응성 가스 바이패스계와,상기 반응성 가스 바이패스계에 설치된, 반응성 가스를 일시적으로 저장해 두기 위한 반응성 가스 버퍼 탱크와,상기 반응성 가스 바이패스계에 있어서, 상기 반응성 가스 버퍼 탱크와 상기 진공 배기계 사이에 설치된 제 2 개폐 밸브를 구비한 것을 특징으로 하는처리 장치.
- 제 6 항에 있어서,상기 진공 배기계에 상기 원료 가스와 상기 반응성 가스가 동시에 흘러 들어오지 않도록, 상기 원료 가스 공급계, 상기 반응성 가스 공급계, 상기 제 1 개폐 밸브 및 상기 제 2 개폐 밸브를 제어하는 가스 공급 제어부를 더 구비한 것을 특징 으로 하는처리 장치.
- 제 7 항에 있어서,상기 가스 공급 제어부는, 상기 처리 용기내로 상기 원료 가스와 상기 반응성 가스를 교대로 간헐적으로 유동시키는 동시에, 상기 원료 가스를 상기 처리 용기내로 유동시키고 있을 때에는 상기 제 2 개폐 밸브를 닫고, 상기 반응성 가스를 상기 처리 용기내로 유동시키고 있을 때에는 상기 제 1 개폐 밸브를 닫도록 제어하는 것을 특징으로 하는처리 장치.
- 제 8 항에 있어서,상기 가스 공급 제어부는, 상기 원료 가스의 공급 정지와 연동하여 상기 제 2 개폐 밸브를 닫힌 상태로부터 열린 상태로 전환하고, 상기 반응성 가스의 공급 정지와 연동하여 상기 제 1 개폐 밸브를 닫힌 상태로부터 열린 상태로 전환하도록 제어하는 것을 특징으로 하는처리 장치.
- 제 9 항에 있어서,상기 가스 공급 제어부는, 상기 처리 용기내로의 상기 원료 가스의 공급을 정지하고 나서 일정한 지연 시간이 경과한 후에 상기 제 2 개폐 밸브를 닫힌 상태로부터 열린 상태로 전환하고, 상기 처리 용기내로의 상기 반응성 가스의 공급을 정지하고 나서 일정한 지연 시간이 경과한 후에 상기 제 1 개폐 밸브를 닫힌 상태로부터 열린 상태로 전환하도록 제어하는 것을 특징으로 하는처리 장치.
- 제 6 항에 있어서,상기 반응성 가스는 환원 가스인 것을 특징으로 하는처리 장치.
- 제 6 항에 있어서,상기 반응성 가스는 산화 가스인 것을 특징으로 하는처리 장치.
- 제 6 항에 있어서,상기 원료 가스는 WF6 가스이며, 상기 반응성 가스는 SiH4 가스인 것을 특징으로 하는처리 장치.
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KR100977818B1 (ko) * | 2007-04-02 | 2010-08-24 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 및 반도체 장치의 제조 방법 |
KR100977819B1 (ko) * | 2007-04-02 | 2010-08-24 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 및 반도체 장치의 제조 방법 |
US8235001B2 (en) | 2007-04-02 | 2012-08-07 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method for manufacturing semiconductor device |
US8367566B2 (en) | 2007-04-02 | 2013-02-05 | Hitachi Kokusai Electric Inc. | Method for manufacturing semiconductor device and method for processing substrate |
KR20130053273A (ko) * | 2011-11-15 | 2013-05-23 | 주식회사 원익아이피에스 | 기판처리장치 및 그 동작 방법 |
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EP1643004A1 (en) | 2006-04-05 |
JP4423914B2 (ja) | 2010-03-03 |
US20090211526A1 (en) | 2009-08-27 |
DE602004032140D1 (de) | 2011-05-19 |
EP1643004B1 (en) | 2011-04-06 |
EP1643004A4 (en) | 2007-06-06 |
JP2004360061A (ja) | 2004-12-24 |
KR100723079B1 (ko) | 2007-05-29 |
KR100723078B1 (ko) | 2007-05-29 |
EP1942206A1 (en) | 2008-07-09 |
WO2004101845A1 (ja) | 2004-11-25 |
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US20070251452A1 (en) | 2007-11-01 |
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