DE602004032140D1 - Behandlungsvorrichtung mit verwendung von ausgangsstoffgas und reaktivem gas - Google Patents
Behandlungsvorrichtung mit verwendung von ausgangsstoffgas und reaktivem gasInfo
- Publication number
- DE602004032140D1 DE602004032140D1 DE602004032140T DE602004032140T DE602004032140D1 DE 602004032140 D1 DE602004032140 D1 DE 602004032140D1 DE 602004032140 T DE602004032140 T DE 602004032140T DE 602004032140 T DE602004032140 T DE 602004032140T DE 602004032140 D1 DE602004032140 D1 DE 602004032140D1
- Authority
- DE
- Germany
- Prior art keywords
- gas
- treatment device
- extractive
- reactive
- reactive gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003134991 | 2003-05-13 | ||
JP2003310713A JP4423914B2 (ja) | 2003-05-13 | 2003-09-02 | 処理装置及びその使用方法 |
PCT/JP2004/006445 WO2004101845A1 (ja) | 2003-05-13 | 2004-05-13 | 原料ガスと反応性ガスとを用いる処理装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602004032140D1 true DE602004032140D1 (de) | 2011-05-19 |
Family
ID=33455457
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004032140T Expired - Lifetime DE602004032140D1 (de) | 2003-05-13 | 2004-05-13 | Behandlungsvorrichtung mit verwendung von ausgangsstoffgas und reaktivem gas |
Country Status (6)
Country | Link |
---|---|
US (2) | US20070251452A1 (de) |
EP (2) | EP1942206A1 (de) |
JP (1) | JP4423914B2 (de) |
KR (2) | KR100723079B1 (de) |
DE (1) | DE602004032140D1 (de) |
WO (1) | WO2004101845A1 (de) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB0412623D0 (en) | 2004-06-07 | 2004-07-07 | Boc Group Plc | Method controlling operation of a semiconductor processing system |
FR2894165B1 (fr) | 2005-12-01 | 2008-06-06 | Sidel Sas | Installation d'alimentation en gaz pour machines de depot d'une couche barriere sur recipients |
EP2084768A1 (de) | 2006-10-17 | 2009-08-05 | Canon Kabushiki Kaisha | Abgasverdünnungsmechanismus und brennstoffzellensystem mit dem abgasverdünnungsmechanismus |
US20080163817A1 (en) * | 2007-01-04 | 2008-07-10 | Oc Oerlikon Balzers Ag | Apparatus for gas handling in vacuum processes |
JP5219562B2 (ja) * | 2007-04-02 | 2013-06-26 | 株式会社日立国際電気 | 基板処理装置、基板処理方法及び半導体装置の製造方法 |
US8235001B2 (en) | 2007-04-02 | 2012-08-07 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method for manufacturing semiconductor device |
JP2009209434A (ja) * | 2008-03-06 | 2009-09-17 | Mitsui Eng & Shipbuild Co Ltd | 薄膜形成装置 |
JP5226438B2 (ja) * | 2008-09-10 | 2013-07-03 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及び基板処理方法 |
JP5633167B2 (ja) * | 2010-03-24 | 2014-12-03 | 株式会社Sumco | エピタキシャル成長システム |
EP2739765B1 (de) * | 2011-08-05 | 2019-01-16 | 3M Innovative Properties Company | Systeme und verfahren zur verarbeitung von dampf |
KR101925580B1 (ko) * | 2011-11-15 | 2019-02-28 | 주식회사 원익아이피에스 | 기판처리장치 및 그 동작 방법 |
US9412602B2 (en) * | 2013-03-13 | 2016-08-09 | Asm Ip Holding B.V. | Deposition of smooth metal nitride films |
US20140287593A1 (en) * | 2013-03-21 | 2014-09-25 | Applied Materials, Inc. | High throughput multi-layer stack deposition |
US10095057B2 (en) | 2013-10-23 | 2018-10-09 | Honeywell International Inc. | Treatment and/or stabilizing gases in an optical gyro based on an inorganic waveguide |
US9394609B2 (en) | 2014-02-13 | 2016-07-19 | Asm Ip Holding B.V. | Atomic layer deposition of aluminum fluoride thin films |
US10643925B2 (en) | 2014-04-17 | 2020-05-05 | Asm Ip Holding B.V. | Fluorine-containing conductive films |
JP2016134569A (ja) * | 2015-01-21 | 2016-07-25 | 株式会社東芝 | 半導体製造装置 |
US9817254B2 (en) | 2015-02-23 | 2017-11-14 | Honeywell International Inc. | Stabilization gas environments in a proton-exchanged lithium niobate optical chip |
KR102477302B1 (ko) * | 2015-10-05 | 2022-12-13 | 주성엔지니어링(주) | 배기가스 분해기를 가지는 기판처리장치 및 그 배기가스 처리방법 |
US9941425B2 (en) | 2015-10-16 | 2018-04-10 | Asm Ip Holdings B.V. | Photoactive devices and materials |
JP6618113B2 (ja) * | 2015-11-02 | 2019-12-11 | 株式会社Screenホールディングス | 基板処理装置 |
US9786491B2 (en) | 2015-11-12 | 2017-10-10 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
US9786492B2 (en) | 2015-11-12 | 2017-10-10 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
KR102378021B1 (ko) | 2016-05-06 | 2022-03-23 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 박막의 형성 |
US10847529B2 (en) | 2017-04-13 | 2020-11-24 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by the same |
US10504901B2 (en) | 2017-04-26 | 2019-12-10 | Asm Ip Holding B.V. | Substrate processing method and device manufactured using the same |
DE17908402T1 (de) * | 2017-05-02 | 2020-06-25 | Picosun Oy | Ald-vorrichtung, verfahren und ventil |
US11158500B2 (en) | 2017-05-05 | 2021-10-26 | Asm Ip Holding B.V. | Plasma enhanced deposition processes for controlled formation of oxygen containing thin films |
DE102017214687A1 (de) * | 2017-08-22 | 2019-02-28 | centrotherm international AG | Behandlungsvorrichtung für Substrate und Verfahren zum Betrieb einer solchen Behandlungsvorrichtung |
JP6964473B2 (ja) * | 2017-09-14 | 2021-11-10 | 東京エレクトロン株式会社 | ガス供給装置及び成膜装置 |
US11538666B2 (en) * | 2017-11-15 | 2022-12-27 | Lam Research Corporation | Multi-zone cooling of plasma heated window |
TWI761636B (zh) | 2017-12-04 | 2022-04-21 | 荷蘭商Asm Ip控股公司 | 電漿增強型原子層沉積製程及沉積碳氧化矽薄膜的方法 |
US11718913B2 (en) * | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11031215B2 (en) | 2018-09-28 | 2021-06-08 | Lam Research Corporation | Vacuum pump protection against deposition byproduct buildup |
KR20210095798A (ko) * | 2020-01-23 | 2021-08-03 | 에이에스엠 아이피 홀딩 비.브이. | 반응 챔버 압력을 안정화하기 위한 시스템 및 방법 |
EP4220690A1 (de) * | 2020-09-24 | 2023-08-02 | Kokusai Electric Corporation | Herstellungsverfahren für halbleiterbauelement, substratbehandlungsvorrichtung und programm |
DE102020128836A1 (de) | 2020-11-03 | 2022-05-05 | Krones Aktiengesellschaft | Vorrichtung und Verfahren zur Plasmabeschichtung von Behältnissen |
CN115595559A (zh) * | 2022-10-27 | 2023-01-13 | 拓荆科技股份有限公司(Cn) | 多腔室半导体设备 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2888253B2 (ja) * | 1989-07-20 | 1999-05-10 | 富士通株式会社 | 化学気相成長法およびその実施のための装置 |
JPH05109621A (ja) * | 1991-10-15 | 1993-04-30 | Asahi Chem Ind Co Ltd | 窒化ガリウム系薄膜の成長方法 |
US5306666A (en) * | 1992-07-24 | 1994-04-26 | Nippon Steel Corporation | Process for forming a thin metal film by chemical vapor deposition |
JP3415207B2 (ja) * | 1992-07-24 | 2003-06-09 | 東京エレクトロン株式会社 | 化学気相成長による金属薄膜形成方法 |
US5427625A (en) * | 1992-12-18 | 1995-06-27 | Tokyo Electron Kabushiki Kaisha | Method for cleaning heat treatment processing apparatus |
JP3174856B2 (ja) * | 1993-05-07 | 2001-06-11 | 日本エア・リキード株式会社 | 混合ガス供給装置 |
JPH0794425A (ja) * | 1993-09-24 | 1995-04-07 | Toshiba Corp | 金属薄膜の形成方法および金属薄膜の形成装置 |
JPH07206586A (ja) * | 1994-01-24 | 1995-08-08 | Komatsu Electron Metals Co Ltd | エピタキシャル成長装置 |
KR100269315B1 (ko) * | 1997-11-24 | 2000-11-01 | 윤종용 | 램프가열방식의매엽식장비를이용한반도체장치의제조방법 |
JPH11312649A (ja) * | 1998-04-30 | 1999-11-09 | Nippon Asm Kk | Cvd装置 |
KR100444149B1 (ko) * | 2000-07-22 | 2004-08-09 | 주식회사 아이피에스 | Ald 박막증착설비용 클리닝방법 |
JP4727085B2 (ja) | 2000-08-11 | 2011-07-20 | 東京エレクトロン株式会社 | 基板処理装置および処理方法 |
JP2002129337A (ja) * | 2000-10-24 | 2002-05-09 | Applied Materials Inc | 気相堆積方法及び装置 |
EP1205574A2 (de) * | 2000-11-13 | 2002-05-15 | Applied Materials, Inc. | Abscheidung von Atomschichten aus Ta2O5 und aus Dielektrika mit hohem K-Wert |
US20020077890A1 (en) * | 2000-12-14 | 2002-06-20 | Lapointe Patrick L. | Methods and systems for interactive collection, exchange and redemption of points |
JP4742431B2 (ja) | 2001-02-27 | 2011-08-10 | 東京エレクトロン株式会社 | 熱処理装置 |
JP2002339071A (ja) * | 2001-05-18 | 2002-11-27 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude | Alcvdシステムにおける処理ガス供給機構 |
US6635965B1 (en) * | 2001-05-22 | 2003-10-21 | Novellus Systems, Inc. | Method for producing ultra-thin tungsten layers with improved step coverage |
US6461436B1 (en) * | 2001-10-15 | 2002-10-08 | Micron Technology, Inc. | Apparatus and process of improving atomic layer deposition chamber performance |
EP1444379B1 (de) | 2001-10-15 | 2005-05-04 | Micron Technology, Inc. | Vorrichtung und verfahren zur abscheidung von atomaren schichten |
US6924235B2 (en) * | 2002-08-16 | 2005-08-02 | Unaxis Usa Inc. | Sidewall smoothing in high aspect ratio/deep etching using a discrete gas switching method |
-
2003
- 2003-09-02 JP JP2003310713A patent/JP4423914B2/ja not_active Expired - Lifetime
-
2004
- 2004-05-13 KR KR1020057021540A patent/KR100723079B1/ko active IP Right Grant
- 2004-05-13 EP EP08004931A patent/EP1942206A1/de not_active Withdrawn
- 2004-05-13 EP EP04732754A patent/EP1643004B1/de not_active Expired - Lifetime
- 2004-05-13 WO PCT/JP2004/006445 patent/WO2004101845A1/ja active Application Filing
- 2004-05-13 DE DE602004032140T patent/DE602004032140D1/de not_active Expired - Lifetime
- 2004-05-13 US US10/555,813 patent/US20070251452A1/en not_active Abandoned
- 2004-05-13 KR KR1020077001030A patent/KR100723078B1/ko active IP Right Grant
-
2009
- 2009-05-04 US US12/434,978 patent/US20090211526A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP1643004A1 (de) | 2006-04-05 |
JP4423914B2 (ja) | 2010-03-03 |
US20090211526A1 (en) | 2009-08-27 |
EP1643004B1 (de) | 2011-04-06 |
EP1643004A4 (de) | 2007-06-06 |
JP2004360061A (ja) | 2004-12-24 |
KR100723079B1 (ko) | 2007-05-29 |
KR100723078B1 (ko) | 2007-05-29 |
EP1942206A1 (de) | 2008-07-09 |
WO2004101845A1 (ja) | 2004-11-25 |
KR20060019536A (ko) | 2006-03-03 |
KR20070012574A (ko) | 2007-01-25 |
US20070251452A1 (en) | 2007-11-01 |
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