DE10339915A8 - Entwicklungsverfahren, Substratbehandlungsverfahren und Substratsbehandlungseinrichtung - Google Patents

Entwicklungsverfahren, Substratbehandlungsverfahren und Substratsbehandlungseinrichtung Download PDF

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Publication number
DE10339915A8
DE10339915A8 DE10339915A DE10339915A DE10339915A8 DE 10339915 A8 DE10339915 A8 DE 10339915A8 DE 10339915 A DE10339915 A DE 10339915A DE 10339915 A DE10339915 A DE 10339915A DE 10339915 A8 DE10339915 A8 DE 10339915A8
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DE
Germany
Prior art keywords
substrate treatment
treatment device
development process
development
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE10339915A
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English (en)
Other versions
DE10339915A1 (de
DE10339915B4 (de
Inventor
Masamitsu Yokohama Itoh
Ikuo Kawasaki Yoneda
Hideaki Yokohama Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kioxia Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE10339915A1 publication Critical patent/DE10339915A1/de
Publication of DE10339915A8 publication Critical patent/DE10339915A8/de
Application granted granted Critical
Publication of DE10339915B4 publication Critical patent/DE10339915B4/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
DE10339915A 2002-08-30 2003-08-29 Entwicklungsverfahren und Verfahren zur Herstellung eines Halbleiterbauteils Expired - Lifetime DE10339915B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002252503A JP4005879B2 (ja) 2002-08-30 2002-08-30 現像方法、基板処理方法、及び基板処理装置
JP2002/252503 2002-08-30

Publications (3)

Publication Number Publication Date
DE10339915A1 DE10339915A1 (de) 2004-05-19
DE10339915A8 true DE10339915A8 (de) 2004-09-30
DE10339915B4 DE10339915B4 (de) 2013-03-07

Family

ID=32058752

Family Applications (2)

Application Number Title Priority Date Filing Date
DE10362373.6A Expired - Lifetime DE10362373B3 (de) 2002-08-30 2003-08-29 Substratbehandlungsverfahren und -einrichtung
DE10339915A Expired - Lifetime DE10339915B4 (de) 2002-08-30 2003-08-29 Entwicklungsverfahren und Verfahren zur Herstellung eines Halbleiterbauteils

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE10362373.6A Expired - Lifetime DE10362373B3 (de) 2002-08-30 2003-08-29 Substratbehandlungsverfahren und -einrichtung

Country Status (6)

Country Link
US (4) US6929903B2 (de)
JP (1) JP4005879B2 (de)
KR (1) KR100512822B1 (de)
CN (2) CN1300640C (de)
DE (2) DE10362373B3 (de)
TW (1) TWI249196B (de)

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JP4841376B2 (ja) * 2006-02-07 2011-12-21 大日本スクリーン製造株式会社 基板処理装置
WO2008008154A2 (en) 2006-07-07 2008-01-17 Fsi International, Inc. Barrier structure and nozzle device for use in tools used to process microelectronic workpieces with one or more treatment fluids
JP2008091782A (ja) * 2006-10-04 2008-04-17 Toshiba Corp パターン形成用テンプレート、パターン形成方法、及びナノインプリント装置
KR100834827B1 (ko) * 2006-11-16 2008-06-04 삼성전자주식회사 포토 마스크 세정장치 및 그의 세정방법
JP4810411B2 (ja) * 2006-11-30 2011-11-09 東京応化工業株式会社 処理装置
JP5014811B2 (ja) * 2007-01-22 2012-08-29 東京エレクトロン株式会社 基板の処理方法
KR100849070B1 (ko) * 2007-04-20 2008-07-30 주식회사 하이닉스반도체 반도체 소자의 ｃｍｐ 방법
US8092599B2 (en) * 2007-07-10 2012-01-10 Veeco Instruments Inc. Movable injectors in rotating disc gas reactors
WO2009020524A1 (en) * 2007-08-07 2009-02-12 Fsi International, Inc. Rinsing methodologies for barrier plate and venturi containment systems in tools used to process microelectronic workpieces with one or more treatment fluids, and related apparatuses
US8051863B2 (en) * 2007-10-18 2011-11-08 Lam Research Corporation Methods of and apparatus for correlating gap value to meniscus stability in processing of a wafer surface by a recipe-controlled meniscus
WO2009137032A2 (en) 2008-05-09 2009-11-12 Fsi International, Inc. Tools and methods for processing microelectronic workpieces using process chamber designs that easily transition between open and closed modes of operation
JP2009295840A (ja) * 2008-06-06 2009-12-17 Toshiba Corp 基板処理方法及びマスク製造方法
JP5175696B2 (ja) * 2008-11-25 2013-04-03 株式会社東芝 現像方法、及びフォトマスクの製造方法
JP2010199326A (ja) * 2009-02-25 2010-09-09 Toyota Motor Corp 樹脂回路基板の製造方法
US7849554B2 (en) 2009-04-28 2010-12-14 Lam Research Corporation Apparatus and system for cleaning substrate
CA2856196C (en) 2011-12-06 2020-09-01 Masco Corporation Of Indiana Ozone distribution in a faucet
JP2015091569A (ja) * 2013-10-03 2015-05-14 東京エレクトロン株式会社 塗布装置
US10145013B2 (en) 2014-01-27 2018-12-04 Veeco Instruments Inc. Wafer carrier having retention pockets with compound radii for chemical vapor desposition systems
US11220737B2 (en) * 2014-06-25 2022-01-11 Universal Display Corporation Systems and methods of modulating flow during vapor jet deposition of organic materials
US11267012B2 (en) * 2014-06-25 2022-03-08 Universal Display Corporation Spatial control of vapor condensation using convection
EP2960059B1 (de) 2014-06-25 2018-10-24 Universal Display Corporation Systeme und verfahren zur modulation des durchflusses während der dampfstrahlabscheidung von organischen materialien
US9547743B2 (en) * 2015-02-25 2017-01-17 Kabushiki Kaisha Toshiba Manufacturing method for a semiconductor device, pattern generating method and nontransitory computer readable medium storing a pattern generating program
JP6443242B2 (ja) * 2015-06-30 2018-12-26 東京エレクトロン株式会社 ノズル、処理液供給装置、液処理装置、及び処理液供給方法
KR102420015B1 (ko) * 2015-08-28 2022-07-12 삼성전자주식회사 Cs-ald 장치의 샤워헤드
CN106900141B (zh) * 2015-10-08 2020-11-17 三菱制纸株式会社 抗蚀层的薄膜化装置
US10566534B2 (en) 2015-10-12 2020-02-18 Universal Display Corporation Apparatus and method to deliver organic material via organic vapor-jet printing (OVJP)
JP6450024B2 (ja) * 2015-11-13 2019-01-09 株式会社日立製作所 洗浄装置及び洗浄方法
WO2017112795A1 (en) 2015-12-21 2017-06-29 Delta Faucet Company Fluid delivery system including a disinfectant device
US10416575B2 (en) * 2016-11-16 2019-09-17 Suss Microtec Photomask Equipment Gmbh & Co. Kg Apparatus and method for cleaning a partial area of a substrate
JP7166089B2 (ja) * 2018-06-29 2022-11-07 東京エレクトロン株式会社 基板処理装置、基板処理システムおよび基板処理方法
CN109375481A (zh) * 2018-12-29 2019-02-22 上海彩丞新材料科技有限公司 一种新型光刻胶显影装置及显影方法
US10809620B1 (en) * 2019-08-16 2020-10-20 Tokyo Electron Limited Systems and methods for developer drain line monitoring
IT202200017178A1 (it) 2022-08-11 2024-02-11 Nuova Ompi S R L Unipersonale Apparato per rivestire un dispositivo medico per iniezione e relativo metodo

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JPH1092784A (ja) * 1996-09-10 1998-04-10 Toshiba Microelectron Corp ウェーハ処理装置およびウェーハ処理方法
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Also Published As

Publication number Publication date
US7001086B2 (en) 2006-02-21
KR100512822B1 (ko) 2005-09-07
TW200407997A (en) 2004-05-16
US20040106072A1 (en) 2004-06-03
US20050081996A1 (en) 2005-04-21
US6929903B2 (en) 2005-08-16
JP2004095712A (ja) 2004-03-25
CN1952791A (zh) 2007-04-25
TWI249196B (en) 2006-02-11
US20050106511A1 (en) 2005-05-19
JP4005879B2 (ja) 2007-11-14
US7094522B2 (en) 2006-08-22
DE10362373B3 (de) 2016-02-11
US20050079639A1 (en) 2005-04-14
KR20040020016A (ko) 2004-03-06
DE10339915A1 (de) 2004-05-19
CN1489000A (zh) 2004-04-14
US7390365B2 (en) 2008-06-24
CN1300640C (zh) 2007-02-14
DE10339915B4 (de) 2013-03-07
CN100552549C (zh) 2009-10-21

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OP8 Request for examination as to paragraph 44 patent law
8181 Inventor (new situation)

Inventor name: ITOH, MASAMITSU, YOKOHAMA, KANAGAWA, JP

Inventor name: YONEDA, IKUO, KAWASAKI, KANAGAWA, JP

Inventor name: SAKURAI, HIDEAKI, YOKOHAMA, KANAGAWA, JP

8716 Sentence in annex german patentblatt annex 1a6
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