DE60328501D1 - Diborideinkristallsubstrat, halbleitervorrichtung damit und herstellungsverfahren dafür - Google Patents

Diborideinkristallsubstrat, halbleitervorrichtung damit und herstellungsverfahren dafür

Info

Publication number
DE60328501D1
DE60328501D1 DE60328501T DE60328501T DE60328501D1 DE 60328501 D1 DE60328501 D1 DE 60328501D1 DE 60328501 T DE60328501 T DE 60328501T DE 60328501 T DE60328501 T DE 60328501T DE 60328501 D1 DE60328501 D1 DE 60328501D1
Authority
DE
Germany
Prior art keywords
diboridein
manufacturing
semiconductor device
crystal substrate
device therefor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60328501T
Other languages
English (en)
Inventor
Shigeki Otani
Hiroyuki Kinoshita
Hiroyuki Matsunami
Jun Suda
Hiroshi Amano
Isamu Akasaki
Satoshi Kamiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
National Institute for Materials Science
Original Assignee
Kyocera Corp
National Institute for Materials Science
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp, National Institute for Materials Science filed Critical Kyocera Corp
Application granted granted Critical
Publication of DE60328501D1 publication Critical patent/DE60328501D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0213—Sapphire, quartz or diamond based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0218—Substrates comprising semiconducting materials from other groups of the Periodic Table than the materials of the active layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)
DE60328501T 2002-08-26 2003-08-21 Diborideinkristallsubstrat, halbleitervorrichtung damit und herstellungsverfahren dafür Expired - Lifetime DE60328501D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002244895A JP4159828B2 (ja) 2002-08-26 2002-08-26 二硼化物単結晶基板、それを用いた半導体レーザダイオード及び半導体装置並びにそれらの製造方法
PCT/JP2003/010575 WO2004018743A1 (ja) 2002-08-26 2003-08-21 二硼化物単結晶基板及びそれを用いた半導体装置並びにその製造方法

Publications (1)

Publication Number Publication Date
DE60328501D1 true DE60328501D1 (de) 2009-09-03

Family

ID=31944180

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60328501T Expired - Lifetime DE60328501D1 (de) 2002-08-26 2003-08-21 Diborideinkristallsubstrat, halbleitervorrichtung damit und herstellungsverfahren dafür

Country Status (6)

Country Link
US (1) US7297989B2 (de)
EP (1) EP1538243B1 (de)
JP (1) JP4159828B2 (de)
CN (1) CN100415948C (de)
DE (1) DE60328501D1 (de)
WO (1) WO2004018743A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7781356B2 (en) * 2003-02-12 2010-08-24 Arizona Board of Regents, a Body Corporate Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer
US20060054919A1 (en) * 2004-08-27 2006-03-16 Kyocera Corporation Light-emitting element, method for manufacturing the same and lighting equipment using the same
JP4907929B2 (ja) * 2005-06-27 2012-04-04 株式会社東芝 電界効果型半導体装置及び電界効果型半導体装置の製造方法
JP2007055885A (ja) * 2005-07-26 2007-03-08 Kyocera Corp ホウ化物単結晶の製造方法および基板
KR20090096549A (ko) 2007-01-04 2009-09-10 아리조나 보드 오브 리전트스, 아리조나주의 아리조나 주립대 대행법인 질화물 통합 적용을 위한 실리콘 상의 붕화 하프늄 및 지르코늄 합금 템플릿
JP5628680B2 (ja) * 2008-10-21 2014-11-19 ルネサスエレクトロニクス株式会社 バイポーラトランジスタ
WO2010047281A1 (ja) 2008-10-21 2010-04-29 日本電気株式会社 バイポーラトランジスタ
JP5780540B2 (ja) * 2010-12-24 2015-09-16 国立研究開発法人物質・材料研究機構 二ホウ化ジルコニウム粉末及びその合成方法
US10058951B2 (en) 2012-04-17 2018-08-28 Toyota Motor Engineering & Manufacturing North America, Inc. Alloy formation control of transient liquid phase bonding
US9044822B2 (en) 2012-04-17 2015-06-02 Toyota Motor Engineering & Manufacturing North America, Inc. Transient liquid phase bonding process for double sided power modules
US10566493B1 (en) 2018-07-31 2020-02-18 International Business Machines Corporation Device with integration of light-emitting diode, light sensor, and bio-electrode sensors on a substrate

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001253800A (ja) * 2000-03-13 2001-09-18 Namiki Precision Jewel Co Ltd 薄型サファイヤ基板
JP4327339B2 (ja) * 2000-07-28 2009-09-09 独立行政法人物質・材料研究機構 半導体層形成用基板とそれを利用した半導体装置
JP2003163375A (ja) * 2001-11-29 2003-06-06 Sanyo Electric Co Ltd 窒化物系半導体素子およびその製造方法

Also Published As

Publication number Publication date
US7297989B2 (en) 2007-11-20
EP1538243B1 (de) 2009-07-22
JP4159828B2 (ja) 2008-10-01
CN1678772A (zh) 2005-10-05
US20060102924A1 (en) 2006-05-18
JP2004083319A (ja) 2004-03-18
EP1538243A1 (de) 2005-06-08
EP1538243A4 (de) 2008-04-02
CN100415948C (zh) 2008-09-03
WO2004018743A1 (ja) 2004-03-04

Similar Documents

Publication Publication Date Title
DE60319898D1 (de) Halbleiter-Bauelement und Herstellungsverfahren
DE10339915A8 (de) Entwicklungsverfahren, Substratbehandlungsverfahren und Substratsbehandlungseinrichtung
DE602004009821D1 (de) Halbleiterbauelement und Herstellungsverfahren dafür
DE602004009740D1 (de) Halbleiterbauelemente mit Transistoren und Herstellungsverfahren dazu
EP1620894A4 (de) Substrat, herstellungsverfahren dafür und halbleiterbauelement
DE60042187D1 (de) Bond-typ Halbleitersubstrat, lichtemittierendes Halbleiterbauelement und Herstellungsverfahren
TWI371782B (en) Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
GB2387967B (en) Semiconductor device and method of manufacturing the same
DE60030279D1 (de) Halbleiterbasis, ihre herstellungsmethode und halbleiterkristallherstellungsmethode
AU2003275541A1 (en) Silicon carbide semiconductor device and its manufacturing method
AU2003211575A1 (en) Semiconductor substrate, semiconductor chip, and semiconductor device manufacturing method
EP1592045A4 (de) Siliciumhalbleitersubstrat und verfahren zu seiner herstellung
DE60228780D1 (de) Halbleiterbauelement, zugehöriges Herstellungsverfahren und Flüssigkeitsstrahl-Vorrichtung
DE60311408D1 (de) Elektrooptische Vorrichtung, Herstellungsverfahren derselben und elektronisches Gerät
DE60038323D1 (de) Halbleiterkristall, dessen Herstellungsverfahren und Halbleiterbauelement
DE60230840D1 (de) Halbleiteranordnung und Herstellungsverfahren dafür
GB2392557B (en) Semiconductor device and method of manufacturing the same
DE60220762D1 (de) Halbleiterbauelement und zugehöriges Herstellungsverfahren
DE60210834D1 (de) Halbleiterbauelement und zugehöriges Herstellungsverfahren
DE60328501D1 (de) Diborideinkristallsubstrat, halbleitervorrichtung damit und herstellungsverfahren dafür
DE60317375D1 (de) Funkerkennungshalbleitereinrichtung und herstellungsverfahren dafür
DE60213057D1 (de) Befestigungsanordnung für Hochfrequenz-Halbleitervorrichtung und zugehöriges Herstellungsverfahren
DE60336580D1 (de) Von hinten beleuchtete photodiodenanordnung, herstellungsverfahren dafür und halbleitervorrichtung
EP1437765A4 (de) Herstellungsverfahren für ein halbleitersubstrat und herstellungsverfahren für einen feldeffekttransistor und halbleitersubstrat und feldeffekttransistor
DE60322190D1 (de) Halbleiteranordnung und entsprechendes Herstellungsverfahren

Legal Events

Date Code Title Description
8364 No opposition during term of opposition