KR20060034660A - 포토마스크 블랭크의 제조방법 - Google Patents
포토마스크 블랭크의 제조방법 Download PDFInfo
- Publication number
- KR20060034660A KR20060034660A KR1020060025174A KR20060025174A KR20060034660A KR 20060034660 A KR20060034660 A KR 20060034660A KR 1020060025174 A KR1020060025174 A KR 1020060025174A KR 20060025174 A KR20060025174 A KR 20060025174A KR 20060034660 A KR20060034660 A KR 20060034660A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- forming
- photomask blank
- light
- transparent substrate
- Prior art date
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- General Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Inorganic Chemistry (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (6)
- 투명기판 위에 마스크 패턴을 형성하기 위한 막을 적어도 갖는 포토마스크 블랭크의 제조방법에 있어서,상기 마스크 패턴을 형성하기 위한 막이, 실리콘 및 질소 및 산소 중 어느 하나 이상을 포함하는 재료로 이루어지거나, 금속, 실리콘 및 질소 및 산소 중 어느 하나 이상을 포함하는 재료로 이루어지는 1층 또는 2층이상의 압축 응력을 갖는 막이며, 상기 막의 적어도 한 층을, 적어도 헬륨 가스를 함유하는 스퍼터링 분위기 중에서 스퍼터 성막함으로써 헬륨을 상기 막 중에 존재시키도록 막을 형성하는 공정과,상기 막을 형성하는 공정 동안 또는 후에 상기 투명기판을 가열함으로써 상기 막의 압축 응력을 저감시키는 공정을 가지며,상기 성막 공정에 있어서 상기 막 중에 존재시킨 헬륨을, 상기 투명 기판을 가열하여 휘발시킴으로써 상기 막의 압축 응력을 저감하는 것을 특징으로 하는 포토마스크 블랭크의 제조방법.
- 제 1항에 있어서, 상기 마스크 패턴을 형성하기 위한 막을, 스퍼터링 가스로서 아르곤과 헬륨의 혼합가스를 이용하여 스퍼터 성막을 행하는 것을 특징으로 하는 포토마스크 블랭크의 제조방법.
- 제 1항 또는 제 2항에 있어서, 상기 포토마스크 블랭크는 하프톤형 위상 시프트 마스크 블랭크이며, 상기 마스크 패턴을 형성하기 위한 막이, 노광광에 대해 소정의 투과율을 가지면서 투명기판에 대해 노광광의 위상을 소정량 시프트 시키는 1층 또는 2층 이상으로 구성되는 광 반투과막인 것을 특징으로 하는 포토마스크 블랭크의 제조방법.
- 제 3항에 있어서, 상기 광 반투과막이 실리콘과, 질소 및 산소 중 어느 하나 이상, 또는 금속과, 실리콘과, 질소 및 산소 중 어느 하나 이상으로 이루어지는 고투과율층과, 저투과율층을 2층 또는 그 이상 적층한 다층 구조의 광 반투과막인 것을 특징으로 하는 포토마스크 블랭크의 제조방법.
- 제 1항에 있어서, 상기 투명기판을 가열하는 공정에서의 가열처리 온도가 180℃ 이상인 것을 특징으로 하는 포토마스크 블랭크의 제조방법.
- 제 1항에 기재된 포토마스크 블랭크를 이용하여 상기 마스크 패턴을 형성하기 위한 막을 패터닝하고 상기 투명기판 위에 마스크 패턴을 형성하는 것을 특징으로 하는 포토마스크의 제조방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002118944A JP4158885B2 (ja) | 2002-04-22 | 2002-04-22 | フォトマスクブランクの製造方法 |
JPJP-P-2002-00118944 | 2002-04-22 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020030025404A Division KR100720739B1 (ko) | 2002-04-22 | 2003-04-22 | 포토마스크 블랭크의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060034660A true KR20060034660A (ko) | 2006-04-24 |
KR100587827B1 KR100587827B1 (ko) | 2006-06-12 |
Family
ID=29535641
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020030025404A KR100720739B1 (ko) | 2002-04-22 | 2003-04-22 | 포토마스크 블랭크의 제조방법 |
KR1020060025174A KR100587827B1 (ko) | 2002-04-22 | 2006-03-20 | 포토마스크 블랭크의 제조방법 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020030025404A KR100720739B1 (ko) | 2002-04-22 | 2003-04-22 | 포토마스크 블랭크의 제조방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7026077B2 (ko) |
JP (1) | JP4158885B2 (ko) |
KR (2) | KR100720739B1 (ko) |
TW (1) | TWI225661B (ko) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100545748C (zh) * | 2003-03-20 | 2009-09-30 | Hoya株式会社 | 中间掩模用基板及其制造方法和光刻掩模板及其制造方法 |
JP4336206B2 (ja) * | 2004-01-07 | 2009-09-30 | Hoya株式会社 | マスクブランクの製造方法、及びマスクブランク製造用スパッタリングターゲット |
JP2005208282A (ja) * | 2004-01-22 | 2005-08-04 | Hoya Corp | ハーフトーン型位相シフトマスクブランクの製造方法、及びハーフトーン型位相シフトマスクの製造方法 |
US8303756B2 (en) * | 2004-12-07 | 2012-11-06 | Lg Display Co., Ltd. | Method for bonding a glass cap and mask for curing sealant |
KR100745065B1 (ko) * | 2004-12-27 | 2007-08-01 | 주식회사 하이닉스반도체 | 위상반전 마스크의 성장성 이물질 제거방법 |
JP5153998B2 (ja) * | 2005-02-25 | 2013-02-27 | Hoya株式会社 | マスクブランク用透明基板の製造方法、マスクブランクの製造方法、露光用マスクの製造方法、及び半導体デバイスの製造方法 |
JP4930964B2 (ja) * | 2005-05-20 | 2012-05-16 | Hoya株式会社 | 位相シフトマスクブランクの製造方法及び位相シフトマスクの製造方法 |
TWI541589B (zh) * | 2005-09-30 | 2016-07-11 | Hoya Corp | A mask blank and its manufacturing method, manufacturing method of a mask, and manufacturing method of a semiconductor device |
JP5412107B2 (ja) * | 2006-02-28 | 2014-02-12 | Hoya株式会社 | フォトマスクブランクの製造方法、及びフォトマスクの製造方法 |
JP4707068B2 (ja) * | 2006-12-22 | 2011-06-22 | Hoya株式会社 | フォトマスクブランクの製造方法 |
JP4910828B2 (ja) * | 2007-03-28 | 2012-04-04 | 大日本印刷株式会社 | 階調マスク |
WO2010119811A1 (ja) * | 2009-04-16 | 2010-10-21 | Hoya株式会社 | マスクブランク及び転写用マスク並びに膜緻密性評価方法 |
TWI494682B (zh) * | 2009-11-18 | 2015-08-01 | Hoya Corp | 基板之再生方法、光罩基底之製造方法、附多層反射膜基板之製造方法及反射型光罩基底之製造方法 |
JP5403040B2 (ja) * | 2011-12-02 | 2014-01-29 | 大日本印刷株式会社 | 階調マスク |
SG11201406324PA (en) | 2012-05-16 | 2014-11-27 | Hoya Corp | Mask blank, transfer mask, and methods of manufacturing the same |
JP6066802B2 (ja) * | 2013-03-29 | 2017-01-25 | Hoya株式会社 | マスクブランクの製造方法及び転写用マスクの製造方法 |
JP6165577B2 (ja) * | 2013-09-30 | 2017-07-19 | Hoya株式会社 | マスクブランクの製造方法及び転写用マスクの製造方法 |
JP2016191822A (ja) * | 2015-03-31 | 2016-11-10 | Hoya株式会社 | 膜応力の評価方法、マスクブランクの製造方法および転写用マスクの製造方法 |
KR101617727B1 (ko) * | 2015-07-24 | 2016-05-03 | 주식회사 에스앤에스텍 | 블랭크 마스크 및 이를 이용한 포토마스크 |
JP2022045198A (ja) * | 2020-09-08 | 2022-03-18 | 凸版印刷株式会社 | 位相シフトマスクブランク、位相シフトマスク及び位相シフトマスクの製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06214792A (ja) | 1993-01-18 | 1994-08-05 | Nippon Telegr & Teleph Corp <Ntt> | メッセージパッシング機構 |
JPH06258817A (ja) * | 1993-03-05 | 1994-09-16 | Toppan Printing Co Ltd | 位相シフトマスクおよびそれに用いるブランクならびにそれらの製造方法 |
KR100295385B1 (ko) * | 1993-04-09 | 2001-09-17 | 기타지마 요시토시 | 하프톤위상쉬프트포토마스크,하프톤위상쉬프트포토마스크용블랭크스및이들의제조방법 |
JP2878143B2 (ja) | 1994-02-22 | 1999-04-05 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 減衰位相シフト・マスク作成用の薄膜材料及びその作成方法 |
JP2989156B2 (ja) | 1996-03-30 | 1999-12-13 | ホーヤ株式会社 | スパッタターゲット、該スパッタターゲットを用いた位相シフトマスクブランク及び位相シフトマスクの製造方法 |
JP4163331B2 (ja) | 1999-07-14 | 2008-10-08 | アルバック成膜株式会社 | 位相シフタ膜の製造方法、位相シフトマスク用ブランクスの製造方法、および、位相シフトマスクの製造方法 |
JP4433112B2 (ja) | 2000-03-06 | 2010-03-17 | 株式会社大一商会 | 遊技機 |
JP3608654B2 (ja) * | 2000-09-12 | 2005-01-12 | Hoya株式会社 | 位相シフトマスクブランク、位相シフトマスク |
JP3722029B2 (ja) * | 2000-09-12 | 2005-11-30 | Hoya株式会社 | 位相シフトマスクブランクの製造方法、及び位相シフトマスクの製造方法 |
-
2002
- 2002-04-22 JP JP2002118944A patent/JP4158885B2/ja not_active Expired - Lifetime
-
2003
- 2003-04-22 KR KR1020030025404A patent/KR100720739B1/ko active IP Right Review Request
- 2003-04-22 US US10/420,005 patent/US7026077B2/en not_active Expired - Lifetime
- 2003-04-22 TW TW092109312A patent/TWI225661B/zh not_active IP Right Cessation
-
2006
- 2006-03-20 KR KR1020060025174A patent/KR100587827B1/ko active IP Right Review Request
Also Published As
Publication number | Publication date |
---|---|
US20030228528A1 (en) | 2003-12-11 |
KR100587827B1 (ko) | 2006-06-12 |
JP2003315980A (ja) | 2003-11-06 |
TW200307984A (en) | 2003-12-16 |
TWI225661B (en) | 2004-12-21 |
KR20030084665A (ko) | 2003-11-01 |
JP4158885B2 (ja) | 2008-10-01 |
KR100720739B1 (ko) | 2007-05-22 |
US7026077B2 (en) | 2006-04-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100587827B1 (ko) | 포토마스크 블랭크의 제조방법 | |
JP3608654B2 (ja) | 位相シフトマスクブランク、位相シフトマスク | |
JP5554239B2 (ja) | フォトマスクブランク、フォトマスク及びその製造方法 | |
JP3722029B2 (ja) | 位相シフトマスクブランクの製造方法、及び位相シフトマスクの製造方法 | |
TWI467316B (zh) | 光罩之製造方法 | |
KR20060117231A (ko) | 위상 시프트 마스크 블랭크 및 위상 시프트 마스크 및이들의 제조 방법 | |
KR20010104642A (ko) | 하프톤 위상 시프트 포토마스크 및 하프톤 위상 시프트포토마스크용 블랭크 | |
KR101646822B1 (ko) | 포토마스크 블랭크 및 그의 제조 방법 | |
KR20170102811A (ko) | 포토마스크 블랭크 및 포토마스크의 제조 방법 | |
JP2017058562A (ja) | フォトマスクブランク、その製造方法及びフォトマスク | |
JP2017033004A (ja) | 表示装置製造用フォトマスク、該フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法 | |
JP3993005B2 (ja) | ハーフトーン型位相シフトマスクブランク、ハーフトーン型位相シフトマスク及びその製造方法、並びにパターン転写方法 | |
JPH103162A (ja) | フォトマスク及びフォトマスクの製造方法 | |
KR100561895B1 (ko) | 하프-톤형 위상 시프팅 마스크 블랭크의 제조 방법 | |
EP1116998B1 (en) | Blank for halftone phase shift photomask and halftone phase shift photomask | |
KR100317211B1 (ko) | 포토마스크 블랭크 및 위상쉬프트 포토마스크 | |
KR20180082395A (ko) | 포토마스크 블랭크 | |
JP4707068B2 (ja) | フォトマスクブランクの製造方法 | |
JP4021237B2 (ja) | リソグラフィーマスクブランクの製造方法及びリソグラフィーマスク並びにハーフトーン型位相シフトマスクブランク | |
JPH11125896A (ja) | フォトマスクブランクス及びフォトマスク | |
JP2005316512A (ja) | 位相シフトマスクブランクの製造方法、位相シフトマスクの製造方法、及びパターン転写方法 | |
JP4332697B2 (ja) | スパッタターゲット | |
JP4974194B2 (ja) | フォトマスクブランクの製造方法 | |
JP6753375B2 (ja) | フォトマスクブランク、フォトマスクブランクの製造方法及びフォトマスクの製造方法 | |
JP2020204761A (ja) | 位相シフトマスクブランクス、その製造方法及び位相シフトマスク |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A107 | Divisional application of patent | ||
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
O035 | Opposition [patent]: request for opposition | ||
O132 | Decision on opposition [patent] | ||
J210 | Request for trial for objection to revocation decision | ||
J301 | Trial decision |
Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION OF CANCELLATION REQUESTED 20071001 Effective date: 20080421 Free format text: TRIAL NUMBER: 2007103000203; TRIAL DECISION FOR APPEAL AGAINST DECISION OF CANCELLATION REQUESTED 20071001 Effective date: 20080421 |
|
S901 | Examination by remand of revocation | ||
O132 | Decision on opposition [patent] | ||
J210 | Request for trial for objection to revocation decision | ||
J301 | Trial decision |
Free format text: TRIAL NUMBER: 2009103000012; TRIAL DECISION FOR APPEAL AGAINST DECISION OF CANCELLATION REQUESTED 20090213 Effective date: 20100630 |
|
S901 | Examination by remand of revocation | ||
O132 | Decision on opposition [patent] | ||
O074 | Maintenance of registration after opposition [patent]: final registration of opposition | ||
G171 | Publication of correction by opposition | ||
FPAY | Annual fee payment |
Payment date: 20130524 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20140530 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20150430 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20160517 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20170522 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20180517 Year of fee payment: 13 |
|
FPAY | Annual fee payment |
Payment date: 20190515 Year of fee payment: 14 |