KR20060028448A - 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및실리콘 반도체 웨이퍼의 제조 장치 - Google Patents
실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및실리콘 반도체 웨이퍼의 제조 장치 Download PDFInfo
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- KR20060028448A KR20060028448A KR1020060018468A KR20060018468A KR20060028448A KR 20060028448 A KR20060028448 A KR 20060028448A KR 1020060018468 A KR1020060018468 A KR 1020060018468A KR 20060018468 A KR20060018468 A KR 20060018468A KR 20060028448 A KR20060028448 A KR 20060028448A
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- South Korea
- Prior art keywords
- single crystal
- crucible
- melt
- heat
- crystal
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
Abstract
Description
Claims (1)
- 초크랄스키 방법에 의한 단결정 제조용 장치에 있어서,용융물을 수용하는 도가니;상기 도가니를 둘러싸고 있는 가열수단;상기 도가니를 둘러싸고 있으면서, 정적 또는 동적 자기장을 생성하는 자기 수단;상기 용융물 위에 배치되어 단결정의 상계면(phase boundary), 가스상 및 용융물에 열을 공급하는 열원;상기 단결정을 둘러싸고 있는 냉각수단;상기 단결정을 둘러싸고 있는 열차단 수단; 및상기 단결정의 성장전면 중앙에 작용하는 열원을 포함하는 것을 특징으로 하는 초크랄스키 방법에 의한 단결정 제조 장치.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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DE10313940 | 2003-03-27 | ||
DE10313940.0 | 2003-03-27 | ||
DE10339792.2 | 2003-08-28 | ||
DE10339792.2A DE10339792B4 (de) | 2003-03-27 | 2003-08-28 | Verfahren und Vorrichtung zur Herstellung eines Einkristalls aus Silicium |
Related Parent Applications (1)
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KR1020040019725A Division KR100588425B1 (ko) | 2003-03-27 | 2004-03-23 | 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법 |
Publications (2)
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KR20060028448A true KR20060028448A (ko) | 2006-03-29 |
KR100699425B1 KR100699425B1 (ko) | 2007-03-28 |
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KR1020040019725A KR100588425B1 (ko) | 2003-03-27 | 2004-03-23 | 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법 |
KR1020060018467A KR100689958B1 (ko) | 2003-03-27 | 2006-02-24 | 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및실리콘 반도체 웨이퍼 |
KR1020060018468A KR100699425B1 (ko) | 2003-03-27 | 2006-02-24 | 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및실리콘 반도체 웨이퍼의 제조 장치 |
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KR1020040019725A KR100588425B1 (ko) | 2003-03-27 | 2004-03-23 | 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법 |
KR1020060018467A KR100689958B1 (ko) | 2003-03-27 | 2006-02-24 | 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및실리콘 반도체 웨이퍼 |
Country Status (5)
Country | Link |
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US (2) | US20040192015A1 (ko) |
JP (1) | JP4095975B2 (ko) |
KR (3) | KR100588425B1 (ko) |
CN (1) | CN100374628C (ko) |
TW (1) | TWI265983B (ko) |
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2004
- 2004-03-23 KR KR1020040019725A patent/KR100588425B1/ko active IP Right Grant
- 2004-03-25 US US10/809,070 patent/US20040192015A1/en not_active Abandoned
- 2004-03-25 TW TW093108047A patent/TWI265983B/zh active
- 2004-03-26 JP JP2004093343A patent/JP4095975B2/ja not_active Expired - Lifetime
- 2004-03-29 CN CNB2004100314255A patent/CN100374628C/zh not_active Expired - Lifetime
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2006
- 2006-02-24 KR KR1020060018467A patent/KR100689958B1/ko active IP Right Grant
- 2006-02-24 KR KR1020060018468A patent/KR100699425B1/ko active IP Right Grant
- 2006-08-31 US US11/513,701 patent/US7708830B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP4095975B2 (ja) | 2008-06-04 |
KR100699425B1 (ko) | 2007-03-28 |
US20060292890A1 (en) | 2006-12-28 |
KR100689958B1 (ko) | 2007-03-08 |
US20040192015A1 (en) | 2004-09-30 |
US7708830B2 (en) | 2010-05-04 |
TW200424368A (en) | 2004-11-16 |
CN100374628C (zh) | 2008-03-12 |
TWI265983B (en) | 2006-11-11 |
JP2004292309A (ja) | 2004-10-21 |
CN1540042A (zh) | 2004-10-27 |
KR20060028447A (ko) | 2006-03-29 |
KR100588425B1 (ko) | 2006-06-12 |
KR20040084728A (ko) | 2004-10-06 |
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