KR100689958B1 - 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및실리콘 반도체 웨이퍼 - Google Patents
실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및실리콘 반도체 웨이퍼 Download PDFInfo
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- KR100689958B1 KR100689958B1 KR1020060018467A KR20060018467A KR100689958B1 KR 100689958 B1 KR100689958 B1 KR 100689958B1 KR 1020060018467 A KR1020060018467 A KR 1020060018467A KR 20060018467 A KR20060018467 A KR 20060018467A KR 100689958 B1 KR100689958 B1 KR 100689958B1
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- single crystal
- crucible
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- heat
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (3)
- 결함의 유형으로서 응집 공백점(COP)을 가지며, 상기 결함은 두께 1㎚ 미만의 산화물층으로 덮여있는 실리콘 반도체로서, 상기 실리콘 반도체는 결함의 유형으로서 응집 격자간 원자(LPIT)를 가지는 적어도 한 영역을 가지며, 상기 응집 격자간 원자는 2차 전위(dislocation)가 존재 않을 정도로 작은 것을 특징으로 하는 실리콘 반도체 웨이퍼.
- 제 1 항에 있어서, 상기 응집공백점 결함은 50㎚ 미만의 평균 직경을 갖는 것을 특징으로 하는 실리콘 반도체 웨이퍼.
- 삭제
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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DE10313940 | 2003-03-27 | ||
DE10313940.0 | 2003-03-27 | ||
DE10339792.2 | 2003-08-28 | ||
DE10339792.2A DE10339792B4 (de) | 2003-03-27 | 2003-08-28 | Verfahren und Vorrichtung zur Herstellung eines Einkristalls aus Silicium |
Related Parent Applications (1)
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KR1020040019725A Division KR100588425B1 (ko) | 2003-03-27 | 2004-03-23 | 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법 |
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KR20060028447A KR20060028447A (ko) | 2006-03-29 |
KR100689958B1 true KR100689958B1 (ko) | 2007-03-08 |
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KR1020040019725A KR100588425B1 (ko) | 2003-03-27 | 2004-03-23 | 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법 |
KR1020060018468A KR100699425B1 (ko) | 2003-03-27 | 2006-02-24 | 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및실리콘 반도체 웨이퍼의 제조 장치 |
KR1020060018467A KR100689958B1 (ko) | 2003-03-27 | 2006-02-24 | 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및실리콘 반도체 웨이퍼 |
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KR1020040019725A KR100588425B1 (ko) | 2003-03-27 | 2004-03-23 | 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법 |
KR1020060018468A KR100699425B1 (ko) | 2003-03-27 | 2006-02-24 | 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및실리콘 반도체 웨이퍼의 제조 장치 |
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US (2) | US20040192015A1 (ko) |
JP (1) | JP4095975B2 (ko) |
KR (3) | KR100588425B1 (ko) |
CN (1) | CN100374628C (ko) |
TW (1) | TWI265983B (ko) |
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JP2004143002A (ja) | 2002-10-25 | 2004-05-20 | Sumitomo Mitsubishi Silicon Corp | シリコン融液対流制御装置及びその制御方法 |
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US20040192015A1 (en) | 2004-09-30 |
CN1540042A (zh) | 2004-10-27 |
KR20040084728A (ko) | 2004-10-06 |
US20060292890A1 (en) | 2006-12-28 |
KR20060028447A (ko) | 2006-03-29 |
US7708830B2 (en) | 2010-05-04 |
TWI265983B (en) | 2006-11-11 |
CN100374628C (zh) | 2008-03-12 |
TW200424368A (en) | 2004-11-16 |
KR100588425B1 (ko) | 2006-06-12 |
JP2004292309A (ja) | 2004-10-21 |
KR100699425B1 (ko) | 2007-03-28 |
KR20060028448A (ko) | 2006-03-29 |
JP4095975B2 (ja) | 2008-06-04 |
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