KR20050078187A - 레이저 어닐링 방법 및 레이저 어닐링 장치 - Google Patents
레이저 어닐링 방법 및 레이저 어닐링 장치 Download PDFInfo
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- KR20050078187A KR20050078187A KR1020040092186A KR20040092186A KR20050078187A KR 20050078187 A KR20050078187 A KR 20050078187A KR 1020040092186 A KR1020040092186 A KR 1020040092186A KR 20040092186 A KR20040092186 A KR 20040092186A KR 20050078187 A KR20050078187 A KR 20050078187A
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- 238000005224 laser annealing Methods 0.000 title claims description 57
- 238000000034 method Methods 0.000 title claims description 45
- 238000000137 annealing Methods 0.000 title abstract description 18
- 239000004065 semiconductor Substances 0.000 title abstract description 3
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
- B23K26/0738—Shaping the laser spot into a linear shape
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
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- G—PHYSICS
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- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0927—Systems for changing the beam intensity distribution, e.g. Gaussian to top-hat
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- G—PHYSICS
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- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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Abstract
Description
Claims (14)
- 기판을 적재하여 직교하는 2 방향으로 이동하기 위한 스테이지와, 레이저광을 발진하는 레이저 발진기와, 상기 레이저광을 가늘고 긴 형상으로 정형하는 빔 정형기와, 상기 가늘고 긴 형상으로 정형된 레이저광을 상기 스테이지 상에 적재한 상기 기판 상에 투영하는 위치 관계에 배치된 결상 렌즈로 구성되고, 상기 가늘고 긴 형상으로 정형된 상기 레이저광을 상기 레이저광의 광축 주위로 회전하는 수단을 구비한 것을 특징으로 하는 레이저 어닐링 장치.
- 기판을 적재하여 직교하는 2 방향으로 이동하기 위한 스테이지와, 레이저광을 발진하는 레이저 발진기와, 상기 레이저광을 가늘고 긴 형상으로 정형하는 빔 정형기와, 상기 가늘고 긴 형상으로 정형된 레이저광을 평행광으로 변환하기 위한 릴레이 렌즈와, 상기 평행광으로 변환된 레이저광을 상기 가늘고 긴 형상으로 정형된 상태에서 상기 스테이지 상에 적재한 상기 기판 상에 투영하는 위치 관계로 배치된 결상 렌즈로 구성되고, 상기 가늘고 긴 형상으로 정형된 상기 레이저광을 상기 레이저광의 광축 주위로 회전하는 수단을 구비한 것을 특징으로 하는 레이저 어닐링 장치.
- 제1항에 있어서, 상기 가늘고 긴 형상으로 정형된 상기 레이저광을 상기 레이저광의 광축 주위로 회전하는 수단이 상기 레이저광을 선형 또는 직사각형으로 정형하는 빔 정형기 이후에 또한 상기 결상 렌즈 이전에 삽입된 이미지 회전자인 것을 특징으로 하는 레이저 어닐링 장치.
- 제2항에 있어서, 상기 가늘고 긴 형상으로 정형된 상기 레이저광을 상기 레이저광의 광축 주위로 회전하는 수단이 상기 레이저광을 선형 또는 직사각 형상으로 정형하는 빔 정형기 이후에 또한 상기 결상 렌즈 이전에 삽입된 이미지 회전자인 것을 특징으로 하는 레이저 어닐링 장치.
- 제3항에 있어서, 레이저광을 가늘고 긴 형상으로 정형하는 빔 정형기가 파웰 렌즈와 원통형 렌즈의 조합, 혹은 칼라이드 스코프, 혹은 회절 광학 소자, 혹은 멀티 렌즈 어레이와 원통형 렌즈의 조합 중 어느 하나인 것을 특징으로 하는 레이저 어닐링 장치.
- 제4항에 있어서, 레이저광을 가늘고 긴 형상으로 정형하는 빔 정형기가 파웰 렌즈와 원통형 렌즈의 조합, 혹은 칼라이드 스코프, 혹은 회절 광학 소자, 혹은 멀티 렌즈 어레이와 원통형 렌즈의 조합 중 어느 하나인 것을 특징으로 하는 레이저 어닐링 장치.
- 제1항에 있어서, 상기 가늘고 긴 형상으로 정형된 레이저광을 광축 주위로 회전하는 수단이 적어도 레이저광을 가늘고 긴 형상으로 정형하는 상기 빔 정형기를 상기 레이저광의 광축 주위로 회전 가능하게 구성한 기구인 것을 특징으로 하는 레이저 어닐링 장치.
- 제2항에 있어서, 상기 가늘고 긴 형상으로 정형된 레이저광을 광축 주위로 회전하는 수단이 적어도 레이저광을 가늘고 긴 형상으로 정형하는 상기 빔 정형기를 상기 레이저광의 광축 주위로 회전 가능하게 구성한 기구인 것을 특징으로 하는 레이저 어닐링 장치.
- 제1항에 있어서, 레이저광을 가늘고 긴 형상으로 정형하는 빔 정형기가 파웰 렌즈와 원통형 렌즈의 조합, 혹은 칼라이드 스코프, 혹은 회절 광학 소자 중 어느 하나인 것을 특징으로 하는 레이저 어닐링 장치.
- 제2항에 있어서, 레이저광을 가늘고 긴 형상으로 정형하는 빔 정형기가 파웰 렌즈와 원통형 렌즈의 조합, 혹은 칼라이드 스코프, 혹은 회절 광학 소자 중 어느 하나인 것을 특징으로 하는 레이저 어닐링 장치.
- 제1항에 있어서, 상기 레이저 발진기가 연속 발진 레이저광을 발생하는 발진기이고, 상기 레이저광을 가늘고 긴 형상으로 정형하는 상기 빔 정형기보다 전방에 시간 변조기가 설치되고, 상기 시간 변조기에 의해 시간 변조된 연속 발진 레이저광이 가늘고 긴 형상으로 정형되는 것을 특징으로 하는 레이저 어닐링 장치.
- 1주면에 비정질 실리콘막 혹은 다결정 실리콘막이 형성된 기판을 스테이지 상에 적재하고, 상기 기판 상의 비정질 실리콘막 혹은 다결정 실리콘막의 원하는 영역에 가늘고 긴 형상으로 정형된 레이저광을 조사하면서 주사하는 레이저 어닐링 방법이며, 상기 기판 상의 복수의 방향으로 상기 레이저광을 주사할 때에, 상기 기판을 회전시키는 일 없이 가늘고 긴 형상으로 정형된 레이저광을 광축 주위로 회전시켜, 상기 기판을 적재한 상기 스테이지는 직행하는 2방향으로만 이동함으로써 원하는 위치, 원하는 방향으로 상기 가늘고 긴 형상으로 정형된 레이저광을 조사하는 것을 특징으로 하는 레이저 어닐링 방법.
- 제12항에 있어서, 1주면에 비정질 실리콘막 혹은 다결정 실리콘막이 형성된 상기 기판에 조사되는 레이저광이 시간 변조된 연속 발진 레이저광이고, 또한 가늘고 긴 형상으로 정형된 레이저광인 것을 특징으로 하는 레이저 어닐링 방법.
- 제12항에 있어서, 1주면에 비정질 실리콘막 혹은 다결정 실리콘막이 형성된 상기 기판에 조사되는 레이저광이 펄스 발진된 레이저광이고, 또한 가늘고 긴 형상으로 정형된 레이저광인 것을 특징으로 하는 레이저 어닐링 방법.
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JP4838982B2 (ja) | 2011-12-14 |
TWI260701B (en) | 2006-08-21 |
US7397831B2 (en) | 2008-07-08 |
JP2005217213A (ja) | 2005-08-11 |
TW200527516A (en) | 2005-08-16 |
KR100685344B1 (ko) | 2007-02-22 |
US20050170572A1 (en) | 2005-08-04 |
CN1649081A (zh) | 2005-08-03 |
CN100347814C (zh) | 2007-11-07 |
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