CN103915318A - 激光退火设备、多晶硅薄膜及其制作方法 - Google Patents

激光退火设备、多晶硅薄膜及其制作方法 Download PDF

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CN103915318A
CN103915318A CN201410099177.1A CN201410099177A CN103915318A CN 103915318 A CN103915318 A CN 103915318A CN 201410099177 A CN201410099177 A CN 201410099177A CN 103915318 A CN103915318 A CN 103915318A
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laser
annealing
face
laser annealing
light
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田雪雁
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BOE Technology Group Co Ltd
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Priority to EP14882176.2A priority patent/EP3121836B1/en
Priority to US14/761,998 priority patent/US10020194B2/en
Priority to PCT/CN2014/095313 priority patent/WO2015139498A1/zh
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Abstract

本发明涉及激光退火技术领域，公开了一种激光退火设备、一种多晶硅薄膜及其制作方法。所述激光退火设备，包括退火室，所述退火室内设置有激光发生器，所述退火室内还设置有：透过激光的退火窗体，以及位于所述退火窗体之上相对设置的两个切光板，其中，每个所述切光板的切光端面为楔形端面。在本发明技术方案中，由于切光端面采用楔形端面，因此，射到切光端面的入射光束发生反射形成的反射光束与透过退火窗体的射入光束的夹角较大，振动方向相差较大，因此不易发生干涉现象，减少了多晶硅薄膜上因干涉而产生的干涉性斑点，提高了多晶硅薄膜的品质，并且也提高了产品的良率。

Description

激光退火设备、多晶硅薄膜及其制作方法
技术领域
本发明涉及激光退火技术领域，特别是涉及一种激光退火设备、一种多晶硅薄膜及其制作方法。
背景技术
在平板显示装置中，有源矩阵有机发光二极管（Active Matrix Organic LightEmitting Diode，简称AMOLED）凭据高画质、移动图像响应时间短、低功耗、宽视角及超轻超薄等优点，成为了未来显示技术的最好选择。目前AMOLED的背板技术中，多晶硅层的制作主要采用准分子激光退火（Excimer LaserAnnealing，简称ELA）、固相晶化或金属诱导晶化等多种制作方法。而采用准分子激光退火工艺，来得到的背板中晶体管有源层的多晶硅薄膜是唯一已经实现量产的方法。
准分子激光退火工艺，是一种相对比较复杂的退火过程。ELA设备是用准分子激光束对基板上的非晶硅膜进行短时间照射，使其再结晶变成多晶硅膜的设备。如图1所示，图1为现有的激光退火设备的结构示意图，所述退火设备包括激光发生器（图1中未示出）、退火窗体2（Annealing Window，也称为退火窗口），位于退火窗体2之上相对设置的两个切光板1。激光发生器发出的激光束，一部分透过退火窗体2射到非晶硅薄膜3上，一部分被切光板1阻挡反射回去，图1中所示射入光束40透过退火窗体2射到非晶硅薄膜3上，入射到切光板1的入射光束41被切光板1反射形成反射光束42，射入光束40与入射光束41的光传播方向基本相同，由于切光板1的反射面与入射光束41的夹角接近直角，因此反射光束42与射入光束40的夹角α很小，反射光束42与射入光束40的振动方向相近，因此会发生干涉现象，导致形成的多晶硅薄膜上具有干涉性斑点（Mura），这种干涉性斑点会影响多晶硅的品质，同时在生产过程中，如果陆续在多晶硅薄膜上出现干涉性斑点，最终还会造成生产过程中良率的下降。
因此，现有的ELA设备生产的多晶硅薄膜的会有干涉性斑点，导致产品的良率下降。
发明内容
本发明的目的是提供一种激光退火设备、一种多晶硅薄膜及其制作方法，用以减少多晶硅薄膜上的干涉性斑点，进而提高产品的良率。
本发明实施例首先提供一种激光退火设备，包括退火室，所述退火室内设置有激光发生器，所述退火室内还设置有：透过激光的退火窗体，以及位于所述退火窗体之上相对设置的两个切光板，其中，每个所述切光板的切光端面为楔形端面。
在本发明技术方案中，由于切光端面采用楔形端面，其剖面结构类似笔尖形，因此，射到切光端面的入射光束发生反射形成的反射光束与透过退火窗体的射入光束的夹角较大，振动方向相差较大，因此不易发生干涉现象，减少了多晶硅薄膜上因干涉而产生的干涉性斑点，提高了多晶硅薄膜的品质，并且也提高了产品的良率。此外，切光板采用楔形端面，使得其与下方退火窗体的接触点后移，减少切光板与退火窗体之间的接触面，降低了对退火窗体的磨损性，提高了退火窗体的使用寿命。
楔形端面的结构有多种，如棱台的侧面形成、两个相交的平面形成或采用其他曲面形成，优选的，所述楔形端面为互成夹角的两个平面。
优选的，所述互成夹角的两个平面中的任一平面与退火窗体所在平面的夹角为40～50度。当每个平面与退火窗体所在平面的夹角为40～50度时，入射光与反射光的夹角为80到100度之间，透过退火窗体的射入光束与反射光束的振动方向接近垂直，有效地减少了射入光束与反射光束的干涉现象，减少了多晶硅薄膜上因干涉而产生的干涉性斑点，提高了多晶硅薄膜的品质，并且也提高了产品的良率。
其它的楔形切光端面，优选的，所述楔形端面为半椭圆柱面或抛物柱面。当然，楔形端面还可以为其它形式的，只要从远离切光板主体的一侧到靠近切光板主体的一侧呈现高度增大的趋势即可。
对于上述任一种所述的激光退火设备，所述激光发生器为准分子激光器。
优选的，所述准分子激光器为氯化氙准分子激光器，氟化氪准分子激光器或氟化氩准分子激光器。
对于上述任一种激光退火设备，还包括位于所述退火室底部用于承载基板的承载台。
本发明实施例还提供一种多晶硅薄膜的制作方法，包括：
形成位于基板之上的非晶硅薄膜；
采用上述任一种激光退火设备对非晶硅薄膜进行激光退火，形成多晶硅薄膜。
在激光退火设备中，通过改变切光板端面的形状，减少了多晶硅薄膜上的干涉性斑点，切光板端面的改进简单，花费成本很低，采用该方法制作的多晶硅特别适合低温多晶硅（Low Temperature Poly-Silicon，简称LTPS）AMOLED的制作及生产。该方法有效地减少了目前LTPS-AMOLED中易出现多晶硅薄膜干涉性斑点的现象。
优选的，在所述激光退火过程中，激光脉冲频率为500Hz，重叠率为92%～98%，激光扫描速率为4mm/s～16mm/s，激光能量密度为300～500mJ/cm2。
本发明实施例还提供一种多晶硅薄膜，所述多晶硅薄膜采用上述任一种制作方法得到。
采用上述制作方法得到的多晶硅薄膜可以作为多晶硅薄膜晶体管的有源层，适用于低温多晶硅薄膜晶体管液晶显示器（Low Temperature Poly-SiliconThin Film Transistor Liquid Crystal Display，简称LTPS TFT-LCD）及有源矩阵有机发光二极管显示器等领域。
附图说明
图1为现有的激光退火设备的结构示意图；
图2为本发明一实施例的激光退火设备的结构示意图；
图3为本发明一实施例的激光退火设备的结构示意图；
图4为本发明一实施例多晶硅薄膜的制作方法的流程示意图。
附图标记：
1-切光板  2-退火窗体  3-非晶硅薄膜  11-切光板
40-射入光束  41-入射光束  42-反射光束
具体实施方式
为了解决现有技术中存在的多晶硅薄膜上的干涉性斑点导致多晶硅薄膜品质较差的技术问题，本发明提供了一种激光退火设备、一种多晶硅薄膜及其制作方法。在本发明的技术方案中，由于切光板的切光端面为楔形端面，因此，射到切光端面的入射光束发生反射形成的反射光束与透过退火窗体的射入光束的夹角较大，振动方向接近垂直，因此不易发生干涉现象，减少了多晶硅薄膜上因干涉而产生的干涉性斑点，提高了多晶硅薄膜的品质，并且也提高了产品的良率。为使本发明的目的、技术方案和优点更加清楚，以下举实施例对本发明作进一步详细说明。
本发明实施例首先提供一种激光退火设备，如图2所示，图2为本发明一实施例的激光退火设备的结构示意图，所述激光退火设备包括退火室，所述退火室内设置有激光发生器（图2未示出），所述退火室内还设置有：透过激光的退火窗体2，以及位于退火窗体2之上相对设置的两个切光板11，其中，每个切光板11的切光端面为楔形端面。
在激光退火设备中，激光发生器可以通过光学系统对激光光束进行调整后入射到退火窗体2和切光板11，由于激光光束接近平行光束，因此入射到退火窗体2的入射光束41与射到切光板11的射入光束40的传播方向几乎相同，在本发明技术方案中，由于切光端面采用楔形端面，其剖面结构类似笔尖形，因此，射到切光端面的入射光束41发生反射形成的反射光束42与透过退火窗体2的射入光束40的夹角较大，因此，反射光束42与射入光束40的振动方向相差较大，因此不易发生干涉现象，减少了多晶硅薄膜上因干涉而产生的干涉性斑点，提高了多晶硅薄膜的品质，并且也提高了产品的良率。此外，切光板11采用楔形端面，使得其与下方退火窗体2的接触点后移，减少切光板11与退火窗体2之间的接触面，降低了对退火窗体2的磨损性，提高了退火窗体2的使用寿命。由于退火窗体2是一种昂贵的消耗品，因此，也降低了激光退火设备的维护成本。
楔形端面的结构有多种，如棱台的侧面形成、两个相交的平面形成或采用其他曲面形成。
如图3所示，图3为本发明一实施例的激光退火设备的结构示意图，优选的，所述楔形端面为互成夹角的两个平面。两个平面可以沿切光板11的平行于上表面的对称面对称，两个平面也可以不对称，只要两个平面互成夹角即可。
请继续参照图3所示，优选的，所述互成夹角的两个平面中的任一平面与退火窗体2所在平面的夹角β为40～50度。当每个平面与退火窗体所在平面的夹角β为40～50度时，射到切光板的切光端面的入射光束41与反射光束42的夹角α为80到100度之间，透过退火窗体的射入光束40与反射光束42的振动方向接近垂直，特别是当每个平面与退火窗体所在平面的夹角β为45度时，入射光束41与反射光束42的夹角为90度，射入光束40与反射光束42的振动方向几乎垂直，有效地减少了射入光束40与反射光束42的干涉现象，减少了多晶硅薄膜上因干涉而产生的干涉性斑点，提高了多晶硅薄膜的品质，并且也提高了产品的良率。
请继续参照图2所示，其它的楔形切光端面，优选的，所述楔形端面为半椭圆柱面或抛物柱面。所述楔形端面还可以为半圆柱面等。当然，楔形端面还可以为其它形式的，只要从远离切光板11主体的一侧到靠近切光板11主体的一侧呈现高度增大的趋势即可。
对于上述任一种所述的激光退火设备，所述激光发生器为准分子激光器。
优选的，所述准分子激光器为氯化氙准分子激光器，氟化氪准分子激光器或氟化氩准分子激光器。
请继续参照图2所示，对于上述任一种激光退火设备，还包括位于所述退火室底部用于承载基板的承载台。
在上述激光退火设备中，还可以包括承载台，用于承载基板，基板上表面具有非晶硅薄膜3，经过激光退火后形成多晶硅薄膜。
本发明实施例还提供一种多晶硅薄膜的制作方法，如图4所示，图4为本发明一实施例多晶硅薄膜的制作方法的流程示意图，所述制作方法包括：
步骤101、形成位于基板之上的非晶硅薄膜；
步骤102、采用上述任一种激光退火设备对非晶硅薄膜进行激光退火，形成多晶硅薄膜。
在激光退火设备中，通过改变切光板端面的形状，将切光板的端面设计为楔形端面，减少了多晶硅薄膜上的干涉性斑点，切光板端面的改进简单，花费成本很低，采用该方法制作的多晶硅特别适合LTPS-AMOLED的制作及生产。该方法有效地减少了目前LTPS-AMOLED中易出现多晶硅薄膜干涉性斑点的现象。
优选的，在所述激光退火过程中，激光脉冲频率为500Hz，重叠率为92%～98%，激光扫描速率为4mm/s～16mm/s，激光能量密度为300～500mJ/cm2。
在上述制作方法中，将激光参数进行设计，使得非晶硅薄膜更好地转化为多晶硅薄膜。上述激光参数可以针对准分子激光器设计。
在上述任一种制作方法中，在形成位于基板之上的非晶硅薄膜之前，还包括：形成位于基板之上的氮化硅层以及形成位于氮化硅层之上的二氧化硅层。非晶硅薄膜位于二氧化硅层之上。
本发明实施例还提供一种多晶硅薄膜，所述多晶硅薄膜采用上述任一种制作方法得到。
采用上述制作方法得到的多晶硅薄膜可以作为多晶硅薄膜晶体管的有源层，适用于LTPS TFT-LCD及有源矩阵有机发光二极管显示器等领域。所述显示器可以为液晶显示装置、电视、电脑、手机等。
以下用一个较优的实施例对多晶硅薄膜的制作方法进行说明，本发明并不限于下述实施例。本发明中采用准分子激光器可以是氯化氙准分子激光器，氟化氪准分子激光器，氟化氩准分子激光器等，在本实施例中采用氯化氙准分子激光器，波长308nm。
本发明制作低温多晶硅薄膜的具体过程为：
步骤一、对衬底基板进行预清洗，衬底基板可以为玻璃衬底基板；
步骤二、在衬底基板之上制作薄膜层，所述薄膜层顶层为非晶硅层；下述为薄膜层的具体制作过程的一个示例：形成缓冲层，该缓冲层包括氮化硅（SiNx）层和位于氮化硅层之上的二氧化硅（SiO2）层，具体可以采用等离子体增强化学气相沉积（Plasma Enhanced Chemical Vapor Deposition，简称PECVD）方法沉积缓冲层，氮化硅层的沉积厚度范围可以为50～150nm（纳米），二氧化硅层的沉积厚度范围可以为100～350nm；形成缓冲层之后再形成位于缓冲层之上的非晶硅层，同样地，可以采用PECVD的方法进行沉积，非晶硅层的沉积厚度为30～60nm；在完成非晶硅层的沉积后，于400～500℃的温度下，对非晶硅层进行0.5～3小时的加热处理；
步骤三、加热处理之后，将制备完非晶硅层的基板，放置于上述任一种激光退火设备的退火室中，采用准分子激光退火，准分子激光束射到楔形端面的切光板，激光束切短到采用的长度，透过退火窗体照射到非晶硅层上，进行的准分子激光退火的扫描。在激光退火过程中可以设计相关参数：激光脉冲频率为500Hz，重叠率为92%～98%，激光扫描速率为：4mm/s～16mm/s，激光能量密度为300～500mJ/cm2。
采用现有的平板状的切光板制作的多晶硅薄膜，在激光束边缘照射的多晶硅薄膜部分通过显微镜观察发现具有呈条纹状的干涉性斑点，而通过上述方法得到的多晶硅薄膜基板没有出现干涉性斑点，该方法中准分子激光束通过切光端面为楔形的切光端面的切光板，射入光束及射出光束的振动方向垂直，有效地防止了射入光束及反射光束的干涉现象，从而防止了基板上的多晶硅薄膜因干涉而产生的干涉性斑点。并且该方法中楔形端面的切光板与下方退火窗体接触点后移，降低了与退火窗体的磨损性，提高退火窗体的使用寿命。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (10)

1.一种激光退火设备，包括退火室，所述退火室内设置有激光发生器，其特征在于，所述退火室内还设置有：透过激光的退火窗体，以及位于所述退火窗体之上相对设置的两个切光板，其中，每个所述切光板的切光端面为楔形端面。
2.如权利要求1所述的激光退火设备，其特征在于，所述楔形端面为互成夹角的两个平面。
3.如权利要求2所述的激光退火设备，其特征在于，所述互成夹角的两个平面中的任一平面与退火窗体所在平面的夹角为40～50度。
4.如权利要求1所述的激光退火设备，其特征在于，所述楔形端面为半椭圆柱面或抛物柱面。
5.如权利要求1～4任一所述的激光退火设备，其特征在于，所述激光发生器为准分子激光器。
6.如权利要求5所述的激光退火设备，其特征在于，所述准分子激光器为氯化氙准分子激光器，氟化氪准分子激光器或氟化氩准分子激光器。
7.如权利要求1所述的激光退火设备，其特征在于，还包括位于所述退火室底部用于承载基板的承载台。
8.一种多晶硅薄膜的制作方法，其特征在于，包括：
形成位于基板之上的非晶硅薄膜；
采用如权利要求1～7任一项所述的激光退火设备对非晶硅薄膜进行激光退火，形成多晶硅薄膜。
9.如权利要求8所述的制作方法，其特征在于，在所述激光退火过程中，激光脉冲频率为500Hz，重叠率为92%～98%，激光扫描速率为4mm/s～16mm/s，激光能量密度为300～500mJ/cm2。
10.一种多晶硅薄膜，其特征在于，所述多晶硅薄膜采用如权利要求8或9所述的制作方法得到。
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