CN102699529A - 改进的激光退火设备 - Google Patents
改进的激光退火设备 Download PDFInfo
- Publication number
- CN102699529A CN102699529A CN2012101742921A CN201210174292A CN102699529A CN 102699529 A CN102699529 A CN 102699529A CN 2012101742921 A CN2012101742921 A CN 2012101742921A CN 201210174292 A CN201210174292 A CN 201210174292A CN 102699529 A CN102699529 A CN 102699529A
- Authority
- CN
- China
- Prior art keywords
- laser beam
- annealing apparatus
- protection piece
- laser annealing
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005224 laser annealing Methods 0.000 title claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 8
- -1 indium tin metal oxide Chemical class 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000005361 soda-lime glass Substances 0.000 claims description 3
- 239000012634 fragment Substances 0.000 abstract description 12
- 230000001681 protective effect Effects 0.000 abstract 4
- 238000000137 annealing Methods 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
- B23K26/0732—Shaping the laser spot into a rectangular shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/354—Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
- B23K26/706—Protective screens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Recrystallisation Techniques (AREA)
Abstract
本发明涉及一种改进的激光退火设备。该改进的激光退火设备包括激光束、外壳、位于该外壳顶侧的激光束输出窗口、位于该外壳底侧的用于承载待退火材料的基板、以及位于该激光束输出窗口和基板之间的可移动的保护块,该保护块相对于水平方向呈倾斜设置,该保护块设有贯通其上下表面的狭缝,该激光束垂直向下通过该激光束输出窗口后保持穿过该狭缝再射到该基板上。本发明的改进的激光退火设备通过与水平方向倾斜放置一个保护块,防止碎片影响激光头,减少激光头的更换,降低成本。
Description
技术领域
本发明涉及退火技术,尤其涉及一种改进的激光退火设备。
背景技术
退火是一种常用的金属热处理工艺,指的是将金属缓慢加热到一定温度,保持足够时间,然后以适宜速度冷却。退火的目的一般在于:降低硬度,改善切削加工性;消除残余应力,稳定尺寸,减少变形与裂纹倾向;细化晶粒,调整组织,消除组织缺陷。
在半导体技术中也常常应用到退火技术。例如,半导体芯片在经过离子注入以后就需要退火。因为往半导体中注入杂质离子时,高能量的入射离子会与半导体晶格上的原子碰撞,使一些晶格原子发生位移,结果造成大量的空位,将使得注入区中的原子排列混乱或者变成为非晶区,所以在离子注入以后必须把半导体放在一定的温度下进行退火,以恢复晶体的结构和消除缺陷。同时,退火还有激活施主和受主杂质的功能,即把有些处于间隙位置的杂质原子通过退火而让它们进入替代位置。退火的温度一般为200~800℃,比热扩散掺杂的温度要低得多。蒸发电极金属以后也需要进行退火,使得半导体表面与金属能够形成合金,以接触良好(减小接触电阻),这时的退火温度要选取得稍高于金属-半导体的共熔点。
激光退火技术是半导体加工的一种新工艺,效果比常规热退火好得多。激光退火后,杂质的替位率可达到98%~99%,可使多晶硅的电阻率降到普通加热退火的1/2~1/3,还可大大提高集成电路的集成度,使电路元件间的间隔缩小到0.5微米。使用激光退火主要有两种方法。在第一种方法中,使用连续激光器,例如氩离子激光器,把一束聚焦光束加到半导体材料上。半导体材料的结晶过程是,首先使其融化,然后由于光束的斜度能量分布和运动,使半导体逐步固体化。在第二种方法中,使用脉冲振荡激光器,例如准分子激光器。半导体材料的结晶过程是,利用高能的激光脉冲使其瞬时熔化,然后固化。
用于激光退火的激光头比较昂贵,更换费时且影响生产,目前大多数退火用激光头会有一定的保护措施。美国专利US6087277提供了一种具有保护措施的激光退火设备。参见图1,其为现有技术中具有保护措施的激光退火设备的结构示意图。该激光退火设备包括具有顶侧和底侧的外壳(图未示),顶侧包括透明的激光束输出窗口(window)10,激光束30竖直向下通过激光束输出窗口10对底侧的基板(substrate)20上的金属层做退火处理,通常是使激光束30相对基板20做扫描移动。由于高能量的激光束30辐射到基板20上的待退火的材料上时容易溅起碎片40之类,图1中碎片40的溅射方向以箭头表示。退火设备长时间运行后,碎片40会累积在激光束输出窗口10的下表面使其变得不透明,从而影响激光束30的通过,进而需要经常更换激光束输出窗口10,造成成本的增加。为了保护激光头,美国专利US6087277的激光退火设备在激光束输出窗口10和基板20之间加入一个相对激光束30可同步移动的水平的保护块(mask)50,防止碎片40影响以及污染激光头。保护块50水平放置,其中央设有狭缝60,竖直向下的激光束30穿过激光束输出窗口10后再穿过狭缝60后才照射到基板2加上,相应的,保护块50可防止碎片40累积在激光束输出窗口10上,延长更换激光束输出窗口10的周期。但是,现有的激光退火设备还需进一步改进,以减少碎片的累积,进而减少更换激光头的次数。
发明内容
因此,本发明的目的在于提供一种减少碎片累积的改进的激光退火设备。
为实现上述目的,本发明提供一种改进的激光退火设备,包括激光束、外壳、位于该外壳顶侧的激光束输出窗口、位于该外壳底侧的用于承载待退火材料的基板、以及位于该激光束输出窗口和基板之间的可移动的保护块,该保护块相对于水平方向呈倾斜设置,该保护块设有贯通其上下表面的狭缝,该激光束垂直向下通过该激光束输出窗口后保持穿过该狭缝再射到该基板上。
其中,所述狭缝的尺寸为恰好允许该激光束垂直向下穿过。
其中,所述保护块相对于水平方向呈45度。
其中,所述保护块为石英制成。
其中,所述保护块为钠钙玻璃制成。
其中,所述狭缝的长宽均为0.1至30毫米。
其中,所述保护块和激光束输出窗口之间的间距为0.1至200毫米。
其中,所述保护块和基板之间的间距为0.1至200毫米。
其中,所述待退火材料为纳米铟锡金属氧化物。
其中,所述激光束为准分子激光束。
本发明的改进的激光退火设备通过与水平方向倾斜放置一个保护块,防止碎片影响激光头,减少激光头的更换,降低成本。
附图说明
下面结合附图,通过对本发明的具体实施方式详细描述,将使本发明的技术方案及其他有益效果显而易见。
附图中,
图1为现有技术中具有保护措施的激光退火设备的结构示意图;
图2为本发明改进的激光退火设备一较佳实施例的结构示意图。
具体实施方式
参见图2,其为本发明改进的激光退火设备一较佳实施例的结构示意图。本发明改进的激光退火设备包括激光束3、外壳(图未示)、位于该外壳顶侧的激光束输出窗口1、位于该外壳底侧的用于承载待退火材料的基板2、以及位于该激光束输出窗口1和基板2之间的可移动的保护块5,该保护块5相对于水平方向以倾角θ呈倾斜设置,在此较佳实施例中与水平/竖直方向呈45°,一方面可以保护激光头,另一方面可以反射溅起的碎片4。该保护块5设有贯通其上下表面的狭缝6,激光束3垂直向下通过激光束输出窗口1后保持穿过狭缝6再射到基板2上。图2中碎片4的溅射方向以箭头表示。本发明改进的退火设备长时间运行后,碎片4不会大量累积在激光束输出窗口1的下表面使其变得不透明。本领域技术人员所熟知,激光束3通常采用扫描基板2的方式进行退火,因此,保护块5需要相对激光束静止。为了实现扫描工作方式,该改进的激光退火设备可以设置有运动装置,使激光束3相对在基板2上扫描,并且保持保护块5相对激光束静止。为了保持退火过程中基板2上方为惰性气氛,外壳通常需要密封。为了使保护块5反射碎片4的效果最佳,狭缝6的尺寸可以为恰好允许激光束3垂直向下穿过。保护块5可以为石英制成,也可以为钠钙玻璃制成,相对于水平方向可以呈45度。
该改进的激光退火设备优选用于待退火材料为纳米铟锡金属氧化物时,使用于液晶面板制程中。此时,狭缝6的长宽可以均为0.1至30毫米。保护块5和激光束输出窗口1之间的间距可以为0.1至200毫米。保护块5和基板2之间的间距可以为0.1至200毫米。激光束3可以为准分子激光束。
综上,本发明改进的激光退火设备通过与水平方向倾斜45°放置一个保护块,防止碎片影响激光头,减少激光头的更换,降低成本。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。
Claims (10)
1.一种改进的激光退火设备,其特征在于,包括激光束、外壳、位于该外壳顶侧的激光束输出窗口、位于该外壳底侧的用于承载待退火材料的基板、以及位于该激光束输出窗口和基板之间的可移动的保护块,该保护块相对于水平方向呈倾斜设置,该保护块设有贯通其上下表面的狭缝,该激光束垂直向下通过该激光束输出窗口后保持穿过该狭缝再射到该基板上。
2.如权利要求1所述的改进的激光退火设备,其特征在于,所述狭缝的尺寸为恰好允许该激光束垂直向下穿过。
3.如权利要求1所述的改进的激光退火设备,其特征在于,所述保护块相对于水平方向呈45度。
4.如权利要求1所述的改进的激光退火设备,其特征在于,所述保护块为石英制成。
5.如权利要求1所述的改进的激光退火设备,其特征在于,所述保护块为钠钙玻璃制成。
6.如权利要求1所述的改进的激光退火设备,其特征在于,所述狭缝的长宽均为0.1至30毫米。
7.如权利要求1所述的改进的激光退火设备,其特征在于,所述保护块和激光束输出窗口之间的间距为0.1至200毫米。
8.如权利要求1所述的改进的激光退火设备,其特征在于,所述保护块和基板之间的间距为0.1至200毫米。
9.如权利要求1所述的改进的激光退火设备,其特征在于,所述待退火材料为纳米铟锡金属氧化物。
10.如权利要求1所述的改进的激光退火设备,其特征在于,所述激光束为准分子激光束。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2012101742921A CN102699529A (zh) | 2012-05-30 | 2012-05-30 | 改进的激光退火设备 |
PCT/CN2012/076462 WO2013177806A1 (zh) | 2012-05-30 | 2012-06-05 | 改进的激光退火设备 |
US13/634,224 US9061368B2 (en) | 2012-05-30 | 2012-06-05 | Laser annealing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2012101742921A CN102699529A (zh) | 2012-05-30 | 2012-05-30 | 改进的激光退火设备 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN102699529A true CN102699529A (zh) | 2012-10-03 |
Family
ID=46892738
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2012101742921A Pending CN102699529A (zh) | 2012-05-30 | 2012-05-30 | 改进的激光退火设备 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN102699529A (zh) |
WO (1) | WO2013177806A1 (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015139498A1 (zh) * | 2014-03-17 | 2015-09-24 | 京东方科技集团股份有限公司 | 激光退火设备、多晶硅薄膜制作方法及由其制成的多晶硅薄膜 |
WO2015180346A1 (zh) * | 2014-05-29 | 2015-12-03 | 京东方科技集团股份有限公司 | 激光退火设备 |
CN108265286A (zh) * | 2017-01-03 | 2018-07-10 | 财团法人工业技术研究院 | 保护装置 |
CN108608113A (zh) * | 2018-05-10 | 2018-10-02 | 上海交通大学 | 一种基于冷却速度的自适应激光焊接装置及使用方法 |
US10133061B2 (en) | 2015-07-14 | 2018-11-20 | Boe Technology Group Co., Ltd. | Laser device |
CN109422454A (zh) * | 2017-08-31 | 2019-03-05 | 三星钻石工业股份有限公司 | 玻璃基板的残余应力降低方法及残余应力降低装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4439259A (en) * | 1981-01-23 | 1984-03-27 | Acton Research Corporation | Method of making laser fusion debris shield |
US6008144A (en) * | 1998-02-02 | 1999-12-28 | Industrial Technology Research | Window shutter for laser annealing |
US20030132210A1 (en) * | 2000-11-07 | 2003-07-17 | Koji Fujii | Optical machining device |
CN2757750Y (zh) * | 2004-12-24 | 2006-02-15 | 广州市激光技术应用研究所 | 一种导光臂聚焦透镜保护装置的激光机 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4588885A (en) * | 1984-02-07 | 1986-05-13 | International Technical Associates | Method of and apparatus for the removal of paint and the like from a substrate |
JPS60175351A (ja) * | 1984-02-14 | 1985-09-09 | Nippon Telegr & Teleph Corp <Ntt> | X線発生装置およびx線露光法 |
-
2012
- 2012-05-30 CN CN2012101742921A patent/CN102699529A/zh active Pending
- 2012-06-05 WO PCT/CN2012/076462 patent/WO2013177806A1/zh active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4439259A (en) * | 1981-01-23 | 1984-03-27 | Acton Research Corporation | Method of making laser fusion debris shield |
US6008144A (en) * | 1998-02-02 | 1999-12-28 | Industrial Technology Research | Window shutter for laser annealing |
US6087277A (en) * | 1998-02-02 | 2000-07-11 | Industrial Technology Research Institute | Window shutter for laser annealing |
US20030132210A1 (en) * | 2000-11-07 | 2003-07-17 | Koji Fujii | Optical machining device |
CN2757750Y (zh) * | 2004-12-24 | 2006-02-15 | 广州市激光技术应用研究所 | 一种导光臂聚焦透镜保护装置的激光机 |
Non-Patent Citations (1)
Title |
---|
JEFFREY A. PAISNER等: ""Status of the National Ignition Facility Project"", 《FUSION ENGINEERING AND DESIGN》, vol. 44, 28 February 1999 (1999-02-28), pages 23 - 33, XP004161712, DOI: doi:10.1016/S0920-3796(98)00313-5 * |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015139498A1 (zh) * | 2014-03-17 | 2015-09-24 | 京东方科技集团股份有限公司 | 激光退火设备、多晶硅薄膜制作方法及由其制成的多晶硅薄膜 |
US10020194B2 (en) | 2014-03-17 | 2018-07-10 | Boe Technology Group Co., Ltd. | Laser annealing device, production process of polycrystalline silicon thin film, and polycrystalline silicon thin film produced by the same |
WO2015180346A1 (zh) * | 2014-05-29 | 2015-12-03 | 京东方科技集团股份有限公司 | 激光退火设备 |
US10133061B2 (en) | 2015-07-14 | 2018-11-20 | Boe Technology Group Co., Ltd. | Laser device |
CN108265286A (zh) * | 2017-01-03 | 2018-07-10 | 财团法人工业技术研究院 | 保护装置 |
CN109422454A (zh) * | 2017-08-31 | 2019-03-05 | 三星钻石工业股份有限公司 | 玻璃基板的残余应力降低方法及残余应力降低装置 |
CN108608113A (zh) * | 2018-05-10 | 2018-10-02 | 上海交通大学 | 一种基于冷却速度的自适应激光焊接装置及使用方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2013177806A1 (zh) | 2013-12-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102699529A (zh) | 改进的激光退火设备 | |
CN1614756B (zh) | 半导体器件及其制造方法 | |
US8616023B2 (en) | Raised features on transparent substrates and related methods | |
Chen et al. | Laser annealing process of ITO thin films using beam shaping technology | |
US7449397B2 (en) | Method for annealing silicon thin films and polycrystalline silicon thin films prepared therefrom | |
Tseng et al. | Mechanical and optoelectric properties of post-annealed fluorine-doped tin oxide films by ultraviolet laser irradiation | |
CN106966580B (zh) | 一种飞秒激光切割玻璃的方法 | |
US9490128B2 (en) | Non-melt thin-wafer laser thermal annealing methods | |
CN101743629B (zh) | 具备薄膜晶体管的半导体装置及其制造方法 | |
Chen et al. | Effects of laser-induced recovery process on conductive property of SnO2: F thin films | |
CN104064451A (zh) | 低温多晶硅的制作方法及使用该方法的tft基板的制作方法与tft基板结构 | |
US20120094425A1 (en) | Ablative scribing of solar cell structures | |
CN103700695A (zh) | 低温多晶硅薄膜及其制备方法、晶体管 | |
Hsiao et al. | Electrode patterning and annealing processes of aluminum-doped zinc oxide thin films using a UV laser system | |
Li et al. | Effects of nanosecond laser irradiation on photoelectric properties of AZO/FTO composite films | |
IT8023526A1 (it) | Procedimento per l'assorbimento di contaminanti, difetti o simili in un corpo semiconduttore | |
US9061368B2 (en) | Laser annealing device | |
JP2016046448A (ja) | 半導体素子の製造方法 | |
Kuk et al. | Effect of nanosecond laser beam shaping on Cu (In, Ga) Se2 thin film solar cell scribing | |
CN102099895B (zh) | 结晶膜的制造方法及结晶膜制造装置 | |
Çınar et al. | Revealing laser crystallization mechanism of silicon thin films via pulsed IR lasers | |
Schmidt et al. | Solid phase epitaxy of silicon thin films by diode laser irradiation for photovoltaic applications | |
CN104979247B (zh) | 激光退火装置和激光退火方法 | |
JP5236929B2 (ja) | レーザアニール方法 | |
KR101391939B1 (ko) | 플라즈마 이온 주입에 의한 비결정질 반도체 박막을 결정화하는 방법 및 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C12 | Rejection of a patent application after its publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20121003 |