KR20050026995A - 반도체 장치 및 그 제조방법 - Google Patents

반도체 장치 및 그 제조방법 Download PDF

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Publication number
KR20050026995A
KR20050026995A KR1020040059025A KR20040059025A KR20050026995A KR 20050026995 A KR20050026995 A KR 20050026995A KR 1020040059025 A KR1020040059025 A KR 1020040059025A KR 20040059025 A KR20040059025 A KR 20040059025A KR 20050026995 A KR20050026995 A KR 20050026995A
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KR
South Korea
Prior art keywords
layer
semiconductor
misfet
silicide
conductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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KR1020040059025A
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English (en)
Korean (ko)
Inventor
니시다아키오
이치노세카즈히토
차키하라히라쿠
Original Assignee
가부시끼가이샤 르네사스 테크놀로지
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Publication of KR20050026995A publication Critical patent/KR20050026995A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/485—Bit line contacts

Landscapes

  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020040059025A 2003-09-11 2004-07-28 반도체 장치 및 그 제조방법 Withdrawn KR20050026995A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003319727A JP4606006B2 (ja) 2003-09-11 2003-09-11 半導体装置の製造方法
JPJP-P-2003-00319727 2003-09-11

Publications (1)

Publication Number Publication Date
KR20050026995A true KR20050026995A (ko) 2005-03-17

Family

ID=34269882

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040059025A Withdrawn KR20050026995A (ko) 2003-09-11 2004-07-28 반도체 장치 및 그 제조방법

Country Status (3)

Country Link
US (1) US7179737B2 (https=)
JP (1) JP4606006B2 (https=)
KR (1) KR20050026995A (https=)

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US7772048B2 (en) * 2007-02-23 2010-08-10 Freescale Semiconductor, Inc. Forming semiconductor fins using a sacrificial fin
KR101320518B1 (ko) * 2007-10-24 2013-12-19 삼성전자주식회사 적층 레벨의 트랜지스터들을 갖는 집적 회로 반도체 소자및 그 제조방법
US7772114B2 (en) * 2007-12-05 2010-08-10 Novellus Systems, Inc. Method for improving uniformity and adhesion of low resistivity tungsten film
US8053365B2 (en) 2007-12-21 2011-11-08 Novellus Systems, Inc. Methods for forming all tungsten contacts and lines
US8062977B1 (en) 2008-01-31 2011-11-22 Novellus Systems, Inc. Ternary tungsten-containing resistive thin films
US8058170B2 (en) 2008-06-12 2011-11-15 Novellus Systems, Inc. Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics
US8803245B2 (en) 2008-06-30 2014-08-12 Mcafee, Inc. Method of forming stacked trench contacts and structures formed thereby
US8551885B2 (en) * 2008-08-29 2013-10-08 Novellus Systems, Inc. Method for reducing tungsten roughness and improving reflectivity
JP5526529B2 (ja) * 2008-11-18 2014-06-18 株式会社ニコン 積層半導体装置及び積層半導体装置の製造方法
KR101561059B1 (ko) 2008-11-20 2015-10-16 삼성전자주식회사 반도체 소자 및 그 제조 방법
US9159571B2 (en) 2009-04-16 2015-10-13 Lam Research Corporation Tungsten deposition process using germanium-containing reducing agent
US20100267230A1 (en) * 2009-04-16 2010-10-21 Anand Chandrashekar Method for forming tungsten contacts and interconnects with small critical dimensions
US10256142B2 (en) 2009-08-04 2019-04-09 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US8207062B2 (en) * 2009-09-09 2012-06-26 Novellus Systems, Inc. Method for improving adhesion of low resistivity tungsten/tungsten nitride layers
US8709948B2 (en) * 2010-03-12 2014-04-29 Novellus Systems, Inc. Tungsten barrier and seed for copper filled TSV
JP2011210744A (ja) * 2010-03-26 2011-10-20 Toshiba Corp 半導体装置及びその製造方法
US20120153483A1 (en) * 2010-12-20 2012-06-21 Akolkar Rohan N Barrierless single-phase interconnect
TWI492368B (zh) 2011-01-14 2015-07-11 半導體能源研究所股份有限公司 半導體記憶裝置
CN113862634A (zh) 2012-03-27 2021-12-31 诺发系统公司 钨特征填充
US10381266B2 (en) 2012-03-27 2019-08-13 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US11437269B2 (en) 2012-03-27 2022-09-06 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US9034760B2 (en) 2012-06-29 2015-05-19 Novellus Systems, Inc. Methods of forming tensile tungsten films and compressive tungsten films
US8975184B2 (en) 2012-07-27 2015-03-10 Novellus Systems, Inc. Methods of improving tungsten contact resistance in small critical dimension features
US8853080B2 (en) 2012-09-09 2014-10-07 Novellus Systems, Inc. Method for depositing tungsten film with low roughness and low resistivity
US8969949B2 (en) 2013-03-10 2015-03-03 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for static random access memory device of vertical tunneling field effect transistor
US9153486B2 (en) 2013-04-12 2015-10-06 Lam Research Corporation CVD based metal/semiconductor OHMIC contact for high volume manufacturing applications
US9589808B2 (en) 2013-12-19 2017-03-07 Lam Research Corporation Method for depositing extremely low resistivity tungsten
US9349637B2 (en) 2014-08-21 2016-05-24 Lam Research Corporation Method for void-free cobalt gap fill
US9748137B2 (en) 2014-08-21 2017-08-29 Lam Research Corporation Method for void-free cobalt gap fill
US9997405B2 (en) 2014-09-30 2018-06-12 Lam Research Corporation Feature fill with nucleation inhibition
US9953984B2 (en) 2015-02-11 2018-04-24 Lam Research Corporation Tungsten for wordline applications
US20160276156A1 (en) * 2015-03-16 2016-09-22 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing process thereof
US10170320B2 (en) 2015-05-18 2019-01-01 Lam Research Corporation Feature fill with multi-stage nucleation inhibition
US9978605B2 (en) 2015-05-27 2018-05-22 Lam Research Corporation Method of forming low resistivity fluorine free tungsten film without nucleation
US9613818B2 (en) 2015-05-27 2017-04-04 Lam Research Corporation Deposition of low fluorine tungsten by sequential CVD process
US9754824B2 (en) 2015-05-27 2017-09-05 Lam Research Corporation Tungsten films having low fluorine content
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
US10211099B2 (en) 2016-12-19 2019-02-19 Lam Research Corporation Chamber conditioning for remote plasma process
KR20250073535A (ko) 2017-08-14 2025-05-27 램 리써치 코포레이션 3차원 수직 nand 워드라인을 위한 금속 충진 프로세스
KR102806630B1 (ko) 2018-05-03 2025-05-12 램 리써치 코포레이션 3d nand 구조체들에 텅스텐 및 다른 금속들을 증착하는 방법
WO2020118100A1 (en) 2018-12-05 2020-06-11 Lam Research Corporation Void free low stress fill
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WO2020210260A1 (en) 2019-04-11 2020-10-15 Lam Research Corporation High step coverage tungsten deposition
US12237221B2 (en) 2019-05-22 2025-02-25 Lam Research Corporation Nucleation-free tungsten deposition
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KR20220004253A (ko) * 2020-07-03 2022-01-11 에스케이하이닉스 주식회사 반도체장치 및 그 제조 방법
US12266570B2 (en) 2020-12-23 2025-04-01 Intel Corporation Self-aligned interconnect structures and methods of fabrication
JPWO2023188379A1 (https=) * 2022-03-31 2023-10-05

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JP3403231B2 (ja) * 1993-05-12 2003-05-06 三菱電機株式会社 半導体装置およびその製造方法
JPH08204009A (ja) 1995-01-30 1996-08-09 Ricoh Co Ltd 半導体装置及び該半導体装置の製造方法
JPH08264536A (ja) 1995-03-27 1996-10-11 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP3391181B2 (ja) 1996-04-11 2003-03-31 松下電器産業株式会社 半導体装置及びその製造方法
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JP3376302B2 (ja) * 1998-12-04 2003-02-10 株式会社東芝 半導体装置及びその製造方法
JP2003068883A (ja) * 2001-08-24 2003-03-07 Hitachi Ltd 半導体記憶装置

Also Published As

Publication number Publication date
JP4606006B2 (ja) 2011-01-05
US7179737B2 (en) 2007-02-20
JP2005086157A (ja) 2005-03-31
US20050059236A1 (en) 2005-03-17

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