JPWO2023188379A1 - - Google Patents

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Publication number
JPWO2023188379A1
JPWO2023188379A1 JP2024511120A JP2024511120A JPWO2023188379A1 JP WO2023188379 A1 JPWO2023188379 A1 JP WO2023188379A1 JP 2024511120 A JP2024511120 A JP 2024511120A JP 2024511120 A JP2024511120 A JP 2024511120A JP WO2023188379 A1 JPWO2023188379 A1 JP WO2023188379A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024511120A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Publication of JPWO2023188379A1 publication Critical patent/JPWO2023188379A1/ja
Pending legal-status Critical Current

Links

JP2024511120A 2022-03-31 2022-03-31 Pending JPWO2023188379A1 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/016826 WO2023188379A1 (ja) 2022-03-31 2022-03-31 柱状半導体記憶装置と、その製造方法

Publications (1)

Publication Number Publication Date
JPWO2023188379A1 true JPWO2023188379A1 (https=) 2023-10-05

Family

ID=88200415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024511120A Pending JPWO2023188379A1 (https=) 2022-03-31 2022-03-31

Country Status (2)

Country Link
JP (1) JPWO2023188379A1 (https=)
WO (1) WO2023188379A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0758218A (ja) * 1993-08-17 1995-03-03 Toshiba Corp 半導体記憶装置
US20040005755A1 (en) * 2002-07-08 2004-01-08 Masahiro Moniwa Semiconductor memory device and a method of manufacturing the same
US20050059236A1 (en) * 2003-09-11 2005-03-17 Akio Nishida Semiconductor device and a method of manufacturing the same
JP2007317742A (ja) * 2006-05-23 2007-12-06 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
WO2013069102A1 (ja) * 2011-11-09 2013-05-16 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置の製造方法及び半導体装置
WO2015125291A1 (ja) * 2014-02-24 2015-08-27 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 記憶装置、半導体装置、及び記憶装置、半導体装置の製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0758218A (ja) * 1993-08-17 1995-03-03 Toshiba Corp 半導体記憶装置
US20040005755A1 (en) * 2002-07-08 2004-01-08 Masahiro Moniwa Semiconductor memory device and a method of manufacturing the same
JP2004096065A (ja) * 2002-07-08 2004-03-25 Renesas Technology Corp 半導体記憶装置およびその製造方法
US20050059236A1 (en) * 2003-09-11 2005-03-17 Akio Nishida Semiconductor device and a method of manufacturing the same
JP2005086157A (ja) * 2003-09-11 2005-03-31 Renesas Technology Corp 半導体装置およびその製造方法
JP2007317742A (ja) * 2006-05-23 2007-12-06 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
WO2013069102A1 (ja) * 2011-11-09 2013-05-16 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置の製造方法及び半導体装置
WO2015125291A1 (ja) * 2014-02-24 2015-08-27 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 記憶装置、半導体装置、及び記憶装置、半導体装置の製造方法

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WO2023188379A1 (ja) 2023-10-05

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