KR20050018592A - 발광 다이오드 어레이 - Google Patents
발광 다이오드 어레이Info
- Publication number
- KR20050018592A KR20050018592A KR1020040056412A KR20040056412A KR20050018592A KR 20050018592 A KR20050018592 A KR 20050018592A KR 1020040056412 A KR1020040056412 A KR 1020040056412A KR 20040056412 A KR20040056412 A KR 20040056412A KR 20050018592 A KR20050018592 A KR 20050018592A
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- electrode
- bonding
- groove
- conductive layer
- Prior art date
Links
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
- B41J2/447—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources
- B41J2/45—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources using light-emitting diode [LED] or laser arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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- H01L2924/10336—Aluminium gallium arsenide [AlGaAs]
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- H01L2924/10349—Aluminium gallium indium phosphide [AlGaInP]
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- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Led Devices (AREA)
- Wire Bonding (AREA)
- Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
Abstract
Description
Claims (9)
- 기판 상에 형성된 도전층과, 상기 도전층 상에 형성된 각각 독립된 복수개의 발광부와, 상기 발광부를 블록으로 나누도록 상기 도전층에 형성된 제1 홈과, 각 발광부의 상면의 적어도 일부에 형성된 제1 전극과, 각 블록 내에서 도전층 상에 직접 형성된 1개의 제2 전극과, 상기 제1 전극과 별개로 접속되는 스위치용 공통 배선과, 상기 공통 배선의 각각에 접속되는 제1 본딩 패드와, 상기 제2 전극의 각각에 접속되는 제2 본딩 패드를 구비하고, 상기 제1 본딩 패드와 상기 제2 본딩 패드는 길이 방향으로 일렬로 배치되어 있고, 상기 제1 본딩 패드와 상기 제2 본딩 패드의 수의 비율은 1:n(n≥3)인 것을 특징으로 하는 발광 다이오드 어레이.
- 제1항에 있어서,상기 제1 및 제2 본딩 패드의 각각에 접속되는 제3 및 제4 본딩 패드는 상기 공통 배선을 덮는 절연막 상에 연재되는 것을 특징으로 하는 발광 다이오드 어레이.
- 제1항 또는 제2항에 있어서,상기 제1 및 제2 본딩 패드는, 상기 도전층 상에 길이 방향으로 일렬의 섬형상으로 형성된 각각 독립된 본딩부 상에 형성되는 것을 특징으로 하는 발광 다이오드 어레이.
- 제3항에 있어서,상기 발광부 및 상기 본딩부는 메사 에칭홈에 의해 각각 독립되어 형성되어 있는 것을 특징으로 하는 발광 다이오드 어레이.
- 제1항 내지 제4항 중 어느 한 항에 있어서,상기 제1 전극은, 상기 발광부의 일단(상기 제2 전극으로부터 먼 쪽) 측으로부터 대략 상기 발광부의 폭으로 연재되는 접속부와, 상기 발광부의 중앙 부분으로 연재되는 가늘고 긴 연장부로 이루어지는 T자 형상인 것을 특징으로 하는 발광 다이오드 어레이.
- 제1항 내지 제5항 중 어느 한 항에 있어서,상기 제1 전극의 접속부의 길이(어레이의 측방향)는 20μm 이하인 것을 특징 으로 하는 발광 다이오드 어레이.
- 제1항 내지 제6항 중 어느 한 항에 있어서,인접하는 발광부 사이의 상기 도전층에는 제2 홈이 형성되어 있는 것을 특징으로 하는 발광 다이오드 어레이.
- 제7항에 있어서,상기 각 블록을 둘러싸는 상기 제1 홈은 사변형상이며, 상기 제1 전극 측의 홈부와, 상기 제2 전극 측의 홈부와, 인접하는 블록을 나누는 한 쌍의 홈부로 이루어지고, 상기 제2 홈은 상기 제1 전극 측의 홈부에 빗형상(comb-shaped)으로 연결되어 있는 것을 특징으로 하는 발광 다이오드 어레이.
- 제7항에 있어서,상기 제2 홈은 상기 제1 전극의 접속부의 대략 단부(상기 제2 전극 측)까지 형성되어 있는 것을 특징으로 하는 발광 다이오드 어레이.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2003-00289909 | 2003-08-08 | ||
JP2003289909A JP2005064104A (ja) | 2003-08-08 | 2003-08-08 | 発光ダイオードアレイ |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050018592A true KR20050018592A (ko) | 2005-02-23 |
KR100644954B1 KR100644954B1 (ko) | 2006-11-10 |
Family
ID=34114106
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040056412A KR100644954B1 (ko) | 2003-08-08 | 2004-07-20 | 발광 다이오드 어레이 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7271421B2 (ko) |
JP (1) | JP2005064104A (ko) |
KR (1) | KR100644954B1 (ko) |
TW (1) | TWI248216B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9502319B2 (en) | 2015-02-13 | 2016-11-22 | Samsung Display Co., Ltd. | Driver integrated circuit chip and display device having the same |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4484039B2 (ja) * | 2004-06-04 | 2010-06-16 | 日立電線株式会社 | 発光ダイオードアレイ |
JP2008544540A (ja) | 2005-06-22 | 2008-12-04 | ソウル オプト デバイス カンパニー リミテッド | 発光素子及びその製造方法 |
CN100461442C (zh) * | 2005-10-08 | 2009-02-11 | 日立电线株式会社 | 发光二极管阵列 |
KR101055772B1 (ko) * | 2005-12-15 | 2011-08-11 | 서울반도체 주식회사 | 발광장치 |
KR100968843B1 (ko) * | 2005-12-16 | 2010-07-09 | 서울옵토디바이스주식회사 | 다수의 발광셀이 어레이된 발광소자 |
US7998761B2 (en) | 2006-01-09 | 2011-08-16 | Seoul Opto Device Co., Ltd. | Light emitting diode with ITO layer and method for fabricating the same |
JP2007305708A (ja) * | 2006-05-10 | 2007-11-22 | Rohm Co Ltd | 半導体発光素子アレイおよびこれを用いた照明用器具 |
KR20100076083A (ko) | 2008-12-17 | 2010-07-06 | 서울반도체 주식회사 | 복수개의 발광셀들을 갖는 발광 다이오드 및 그것을 제조하는 방법 |
JP5195452B2 (ja) * | 2009-01-22 | 2013-05-08 | ソニー株式会社 | 発光素子 |
JP5065318B2 (ja) * | 2009-03-19 | 2012-10-31 | 株式会社沖データ | 駆動装置、ledアレイ、ledヘッド、及びこれらを備えた画像形成装置 |
TWI397989B (zh) * | 2009-12-07 | 2013-06-01 | Epistar Corp | 發光二極體陣列 |
US8471282B2 (en) * | 2010-06-07 | 2013-06-25 | Koninklijke Philips Electronics N.V. | Passivation for a semiconductor light emitting device |
TW201210078A (en) * | 2010-08-25 | 2012-03-01 | Foxsemicon Integrated Tech Inc | Light emitting diode |
US9070851B2 (en) | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
JP5932398B2 (ja) | 2011-07-13 | 2016-06-08 | キヤノン株式会社 | Led素子、led素子アレイおよびその駆動方法 |
TWI589025B (zh) * | 2013-01-10 | 2017-06-21 | 晶元光電股份有限公司 | 發光元件 |
JP6264568B2 (ja) * | 2013-08-06 | 2018-01-24 | パナソニックIpマネジメント株式会社 | 発光デバイスおよび表示装置 |
JP6497647B2 (ja) * | 2013-12-24 | 2019-04-10 | パナソニックIpマネジメント株式会社 | 表示装置及び表示装置の製造方法 |
CN205944139U (zh) | 2016-03-30 | 2017-02-08 | 首尔伟傲世有限公司 | 紫外线发光二极管封装件以及包含此的发光二极管模块 |
CN113589972B (zh) * | 2021-08-19 | 2023-06-23 | 业成科技(成都)有限公司 | 发光二极体屏幕显示器结构及其发光二极体显示单元组 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3185049B2 (ja) | 1996-11-12 | 2001-07-09 | 沖電気工業株式会社 | 発光素子アレイ及びその製造方法 |
US6395582B1 (en) * | 1997-07-14 | 2002-05-28 | Signetics | Methods for forming ground vias in semiconductor packages |
JPH1140842A (ja) | 1997-07-23 | 1999-02-12 | Oki Electric Ind Co Ltd | 発光素子アレイとその製造方法およびプリンタヘッド |
JP2000294830A (ja) | 1999-04-01 | 2000-10-20 | Oki Electric Ind Co Ltd | 発光素子アレイ |
JP2001077431A (ja) | 1999-09-03 | 2001-03-23 | Oki Electric Ind Co Ltd | 発光素子アレイ |
JP3908157B2 (ja) * | 2002-01-24 | 2007-04-25 | Necエレクトロニクス株式会社 | フリップチップ型半導体装置の製造方法 |
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2003
- 2003-08-08 JP JP2003289909A patent/JP2005064104A/ja active Pending
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2004
- 2004-07-20 KR KR1020040056412A patent/KR100644954B1/ko active IP Right Grant
- 2004-08-04 US US10/910,658 patent/US7271421B2/en active Active
- 2004-08-06 TW TW093123574A patent/TWI248216B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9502319B2 (en) | 2015-02-13 | 2016-11-22 | Samsung Display Co., Ltd. | Driver integrated circuit chip and display device having the same |
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TW200507306A (en) | 2005-02-16 |
JP2005064104A (ja) | 2005-03-10 |
US20050029529A1 (en) | 2005-02-10 |
TWI248216B (en) | 2006-01-21 |
US7271421B2 (en) | 2007-09-18 |
KR100644954B1 (ko) | 2006-11-10 |
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