KR20050011677A - 박막 반도체 소자 및 박막 반도체 소자의 제조방법 - Google Patents
박막 반도체 소자 및 박막 반도체 소자의 제조방법 Download PDFInfo
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- KR20050011677A KR20050011677A KR1020040044182A KR20040044182A KR20050011677A KR 20050011677 A KR20050011677 A KR 20050011677A KR 1020040044182 A KR1020040044182 A KR 1020040044182A KR 20040044182 A KR20040044182 A KR 20040044182A KR 20050011677 A KR20050011677 A KR 20050011677A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 147
- 239000010409 thin film Substances 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 205
- 239000002184 metal Substances 0.000 claims abstract description 205
- 239000010410 layer Substances 0.000 claims abstract description 146
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 43
- 239000002356 single layer Substances 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 262
- 230000008018 melting Effects 0.000 claims description 40
- 238000002844 melting Methods 0.000 claims description 40
- 150000002739 metals Chemical class 0.000 claims description 17
- 150000004767 nitrides Chemical class 0.000 claims description 17
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 52
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 description 42
- 239000010936 titanium Substances 0.000 description 42
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 25
- 230000008569 process Effects 0.000 description 22
- 239000007772 electrode material Substances 0.000 description 19
- 239000003990 capacitor Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 16
- 238000001312 dry etching Methods 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 11
- 238000005260 corrosion Methods 0.000 description 10
- 230000007797 corrosion Effects 0.000 description 10
- 239000004973 liquid crystal related substance Substances 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- 238000003860 storage Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000004043 responsiveness Effects 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 230000002265 prevention Effects 0.000 description 5
- 208000018670 synpolydactyly type 1 Diseases 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000008719 thickening Effects 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (13)
- 기판에 반도체막과, 상기 반도체막에 접속된 소스/드레인 전극과, 상기 반도체막에 절연막을 통해 배치된 게이트 전극을 구비하는 박막 반도체 소자에 있어서,상기 게이트 전극의 막두께보다도 상기 소스/드레인 전극의 막두께가 얇은 것을 특징으로 하는 박막 반도체 소자.
- 제 1 항에 있어서, 상기 게이트 전극 및 상기 소스/드레인 전극은, Al계 금속의 단층구조인 것을 특징으로 하는 박막 반도체 소자.
- 기판에 반도체막과, 상기 반도체막에 접속된 소스/드레인 전극과, 상기 반도체막에 절연막을 통해 배치된 게이트 전극을 구비하는 박막 반도체 소자에 있어서,상기 게이트 전극 및 상기 소스/드레인 전극의 각각은, 복수 금속의 적층구조체이고,상기 소스/드레인 전극의 최하층에 배치되어 있는 제1 최하층 금속의 막두께가, 상기 게이트 전극의 최하층에 배치되어 있는 제2 최하층 금속의 막두께보다도 큰 것을 특징으로 하는 박막 반도체 소자.
- 제 3 항에 있어서, 상기 게이트 전극은 상기 제2 최하층 금속보다도 상층측에 Al계 금속을 구비하고, 상기 소스/드레인 전극은 상기 제1 최하층 금속보다도상층측에 Al계 금속을 구비하는 것을 특징으로 하는 박막 반도체 소자.
- 제 4 항에 있어서, 상기 제1 최하층 금속 및 상기 제2 최하층 금속은, Al계 금속보다도 높은 융점을 갖는 고융점 금속인 것을 특징으로 하는 박막 반도체 소자.
- 제 4 항 또는 제 5 항에 있어서, 상기 게이트 전극 및 상기 소스/드레인 전극의 각각은, 상기 Al계 금속의 상층측에 상기 Al계 금속보다도 높은 융점을 갖는 고융점 금속을 구비하는 것을 특징으로 하는 박막 반도체 소자.
- 제 4 항 또는 제 5 항에 있어서, 상기 게이트 전극에서의 상기 Al계 금속의 금속층의 막두께는, 상기 소스/드레인 전극에서의 상기 Al계 금속의 금속층의 막두께보다도 큰 것을 특징으로 하는 박막 반도체 소자.
- 제 4 항 또는 제 5 항에 있어서, 상기 소스/드레인 전극에서의 상기 Al계 금속의 금속층의 막두께는, 상기 제1 최하층 금속의 막두께의 1배∼10배인 것을 특징으로 하는 박막 반도체 소자.
- 제 5 항에 있어서, 상기 고융점 금속은, Ti, W, Ta, Mo, Cr 중 어느 하나를 함유하는 것을 특징으로 하는 박막 반도체 소자.
- 제 5 항에 있어서, 상기 고융점 금속은, 고순도금속, 금속질화물, 금속산화물 중 어느 하나인 것을 특징으로 하는 박막 반도체 소자.
- 제 5 항에 있어서, 상기 고융점 금속은, 복수 종류의 금속을 구비하는 적층구조인 것을 특징으로 하는 박막 반도체 소자.
- 기판 상에 반도체막과, 상기 반도체막에 접속된 소스/드레인 전극과, 상기 반도체막에 절연막을 통해 배치된 게이트 전극을 구비하는 박막 반도체 소자의 제조방법에 있어서,상기 게이트 전극의 막두께보다도 상기 소스/드레인 전극의 막두께를 얇게 형성하는 것을 특징으로 하는 박막 반도체 소자의 제조방법.
- 기판에 반도체막과, 상기 반도체막에 접속된 소스/드레인 전극과, 상기 반도체막에 절연막을 통해 배치된 게이트 전극을 구비하는 박막 반도체 소자의 제조방법에 있어서,상기 게이트 전극 및 상기 소스/드레인 전극의 각각은, 복수 금속의 적층구조체이고,상기 소스/드레인 전극의 최하층에 배치되어 있는 제1 최하층 금속의 막두께를, 상기 게이트 전극의 최하층에 배치되어 있는 제2 최하층 금속의 막두께보다도크게 형성하는 것을 특징으로 하는 박막 반도체 소자의 제조방법.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003200470 | 2003-07-23 | ||
JPJP-P-2003-00200468 | 2003-07-23 | ||
JPJP-P-2003-00200470 | 2003-07-23 | ||
JP2003200468 | 2003-07-23 | ||
JP2004062299A JP2005057240A (ja) | 2003-07-23 | 2004-03-05 | 薄膜半導体素子、及び薄膜半導体素子の製造方法 |
JPJP-P-2004-00062299 | 2004-03-05 |
Publications (2)
Publication Number | Publication Date |
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KR20050011677A true KR20050011677A (ko) | 2005-01-29 |
KR100644122B1 KR100644122B1 (ko) | 2006-11-10 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020040044182A KR100644122B1 (ko) | 2003-07-23 | 2004-06-15 | 박막 반도체 소자 및 박막 반도체 소자의 제조방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7105872B2 (ko) |
JP (1) | JP2005057240A (ko) |
KR (1) | KR100644122B1 (ko) |
CN (1) | CN100378514C (ko) |
TW (1) | TW200510847A (ko) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006332209A (ja) * | 2005-05-24 | 2006-12-07 | Sharp Corp | 薄膜トランジスタ基板及びその製造方法 |
EP1935027B1 (en) * | 2005-10-14 | 2017-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
CN101145564B (zh) * | 2005-11-25 | 2012-08-29 | 香港科技大学 | 有源矩阵显示基板制备方法 |
US20080042131A1 (en) * | 2006-08-15 | 2008-02-21 | Tpo Displays Corp. | System for displaying images including thin film transistor device and method for fabricating the same |
TWI327447B (en) * | 2006-10-16 | 2010-07-11 | Chimei Innolux Corp | Method of fabricating a thin film transistor |
KR100875432B1 (ko) | 2007-05-31 | 2008-12-22 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치 |
KR100889626B1 (ko) * | 2007-08-22 | 2009-03-20 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 이를 구비한유기전계발광표시장치, 및 그의 제조방법 |
KR100889627B1 (ko) * | 2007-08-23 | 2009-03-20 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 구비한유기전계발광표시장치 |
KR100982310B1 (ko) * | 2008-03-27 | 2010-09-15 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 |
KR100989136B1 (ko) * | 2008-04-11 | 2010-10-20 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 |
KR101002666B1 (ko) * | 2008-07-14 | 2010-12-21 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 |
CN104810368B (zh) * | 2014-01-28 | 2017-12-29 | 中芯国际集成电路制造(上海)有限公司 | Cmos晶体管及其形成方法 |
CN104658970A (zh) * | 2015-02-26 | 2015-05-27 | 深圳市华星光电技术有限公司 | 一种制造阵列基板上过孔的方法 |
CN108198787B (zh) * | 2017-12-29 | 2020-12-29 | Tcl华星光电技术有限公司 | 阵列基板及其制造方法 |
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TW280943B (ko) | 1994-07-15 | 1996-07-11 | Sharp Kk | |
JP3744980B2 (ja) | 1995-07-27 | 2006-02-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP3544598B2 (ja) | 1996-07-01 | 2004-07-21 | シャープ株式会社 | 2端子スイッチング素子を有する配線基板 |
JP3403949B2 (ja) | 1998-09-03 | 2003-05-06 | シャープ株式会社 | 薄膜トランジスタ及び液晶表示装置、ならびに薄膜トランジスタの製造方法 |
JP2001028439A (ja) | 1999-07-14 | 2001-01-30 | Seiko Epson Corp | 薄膜トランジスタの製造方法及び電気光学装置の製造方法並びにこれらにより製造された薄膜トランジスタ及び電気光学装置 |
JP2001102445A (ja) | 1999-09-29 | 2001-04-13 | Seiko Epson Corp | 配線基板、半導体装置及び電気光学装置並びにこれらの製造方法 |
JP4906023B2 (ja) * | 2001-08-14 | 2012-03-28 | 古河電気工業株式会社 | GaN系半導体装置 |
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KR100644122B1 (ko) | 2006-11-10 |
US20050035352A1 (en) | 2005-02-17 |
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