CN1577434A - 薄膜半导体器件和薄膜半导体器件的制造方法 - Google Patents
薄膜半导体器件和薄膜半导体器件的制造方法 Download PDFInfo
- Publication number
- CN1577434A CN1577434A CNA2004100708609A CN200410070860A CN1577434A CN 1577434 A CN1577434 A CN 1577434A CN A2004100708609 A CNA2004100708609 A CN A2004100708609A CN 200410070860 A CN200410070860 A CN 200410070860A CN 1577434 A CN1577434 A CN 1577434A
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003200470 | 2003-07-23 | ||
JP2003200468 | 2003-07-23 | ||
JP200470/2003 | 2003-07-23 | ||
JP200468/2003 | 2003-07-23 | ||
JP062299/2004 | 2004-03-05 | ||
JP2004062299A JP2005057240A (ja) | 2003-07-23 | 2004-03-05 | 薄膜半導体素子、及び薄膜半導体素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1577434A true CN1577434A (zh) | 2005-02-09 |
CN100378514C CN100378514C (zh) | 2008-04-02 |
Family
ID=34139369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100708609A Active CN100378514C (zh) | 2003-07-23 | 2004-07-23 | 薄膜半导体器件和薄膜半导体器件的制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7105872B2 (zh) |
JP (1) | JP2005057240A (zh) |
KR (1) | KR100644122B1 (zh) |
CN (1) | CN100378514C (zh) |
TW (1) | TW200510847A (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104658970A (zh) * | 2015-02-26 | 2015-05-27 | 深圳市华星光电技术有限公司 | 一种制造阵列基板上过孔的方法 |
CN104810368A (zh) * | 2014-01-28 | 2015-07-29 | 中芯国际集成电路制造(上海)有限公司 | Cmos晶体管及其形成方法 |
CN108198787A (zh) * | 2017-12-29 | 2018-06-22 | 深圳市华星光电技术有限公司 | 阵列基板及其制造方法 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006332209A (ja) * | 2005-05-24 | 2006-12-07 | Sharp Corp | 薄膜トランジスタ基板及びその製造方法 |
EP1935027B1 (en) * | 2005-10-14 | 2017-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8754416B2 (en) * | 2005-11-25 | 2014-06-17 | The Hong Hong University of Science and Technology | Method for fabrication of active-matrix display panels |
US20080042131A1 (en) * | 2006-08-15 | 2008-02-21 | Tpo Displays Corp. | System for displaying images including thin film transistor device and method for fabricating the same |
TWI327447B (en) * | 2006-10-16 | 2010-07-11 | Chimei Innolux Corp | Method of fabricating a thin film transistor |
KR100875432B1 (ko) | 2007-05-31 | 2008-12-22 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치 |
KR100889626B1 (ko) * | 2007-08-22 | 2009-03-20 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 이를 구비한유기전계발광표시장치, 및 그의 제조방법 |
KR100889627B1 (ko) * | 2007-08-23 | 2009-03-20 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 구비한유기전계발광표시장치 |
KR100982310B1 (ko) | 2008-03-27 | 2010-09-15 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 |
KR100989136B1 (ko) * | 2008-04-11 | 2010-10-20 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 |
KR101002666B1 (ko) * | 2008-07-14 | 2010-12-21 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW280943B (zh) | 1994-07-15 | 1996-07-11 | Sharp Kk | |
JP3744980B2 (ja) * | 1995-07-27 | 2006-02-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP3544598B2 (ja) | 1996-07-01 | 2004-07-21 | シャープ株式会社 | 2端子スイッチング素子を有する配線基板 |
JP3403949B2 (ja) | 1998-09-03 | 2003-05-06 | シャープ株式会社 | 薄膜トランジスタ及び液晶表示装置、ならびに薄膜トランジスタの製造方法 |
JP2001028439A (ja) | 1999-07-14 | 2001-01-30 | Seiko Epson Corp | 薄膜トランジスタの製造方法及び電気光学装置の製造方法並びにこれらにより製造された薄膜トランジスタ及び電気光学装置 |
JP2001102445A (ja) | 1999-09-29 | 2001-04-13 | Seiko Epson Corp | 配線基板、半導体装置及び電気光学装置並びにこれらの製造方法 |
JP4906023B2 (ja) * | 2001-08-14 | 2012-03-28 | 古河電気工業株式会社 | GaN系半導体装置 |
-
2004
- 2004-03-05 JP JP2004062299A patent/JP2005057240A/ja not_active Withdrawn
- 2004-06-15 KR KR1020040044182A patent/KR100644122B1/ko active IP Right Grant
- 2004-06-29 US US10/878,539 patent/US7105872B2/en active Active
- 2004-06-30 TW TW093119836A patent/TW200510847A/zh unknown
- 2004-07-23 CN CNB2004100708609A patent/CN100378514C/zh active Active
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104810368A (zh) * | 2014-01-28 | 2015-07-29 | 中芯国际集成电路制造(上海)有限公司 | Cmos晶体管及其形成方法 |
CN104810368B (zh) * | 2014-01-28 | 2017-12-29 | 中芯国际集成电路制造(上海)有限公司 | Cmos晶体管及其形成方法 |
CN104658970A (zh) * | 2015-02-26 | 2015-05-27 | 深圳市华星光电技术有限公司 | 一种制造阵列基板上过孔的方法 |
CN108198787A (zh) * | 2017-12-29 | 2018-06-22 | 深圳市华星光电技术有限公司 | 阵列基板及其制造方法 |
CN108198787B (zh) * | 2017-12-29 | 2020-12-29 | Tcl华星光电技术有限公司 | 阵列基板及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20050035352A1 (en) | 2005-02-17 |
KR20050011677A (ko) | 2005-01-29 |
CN100378514C (zh) | 2008-04-02 |
KR100644122B1 (ko) | 2006-11-10 |
JP2005057240A (ja) | 2005-03-03 |
TW200510847A (en) | 2005-03-16 |
US7105872B2 (en) | 2006-09-12 |
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