KR20050009274A - 높은 비표면적을 가지는 탄탈 파우더 및/또는 니오비움파우더의 제조방법 - Google Patents
높은 비표면적을 가지는 탄탈 파우더 및/또는 니오비움파우더의 제조방법 Download PDFInfo
- Publication number
- KR20050009274A KR20050009274A KR10-2004-7004466A KR20047004466A KR20050009274A KR 20050009274 A KR20050009274 A KR 20050009274A KR 20047004466 A KR20047004466 A KR 20047004466A KR 20050009274 A KR20050009274 A KR 20050009274A
- Authority
- KR
- South Korea
- Prior art keywords
- tantalum
- powder
- niobium
- surface area
- alkali metal
- Prior art date
Links
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 93
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 title claims abstract description 78
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 52
- 229910000484 niobium oxide Inorganic materials 0.000 claims abstract description 29
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical class [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910001936 tantalum oxide Inorganic materials 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 25
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 22
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 20
- 150000001340 alkali metals Chemical class 0.000 claims abstract description 20
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 20
- 150000004820 halides Chemical class 0.000 claims abstract description 16
- 229910052788 barium Inorganic materials 0.000 claims abstract description 13
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 13
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 12
- 238000006722 reduction reaction Methods 0.000 claims description 38
- WTKKCYNZRWIVKL-UHFFFAOYSA-N tantalum Chemical compound [Ta+5] WTKKCYNZRWIVKL-UHFFFAOYSA-N 0.000 claims description 33
- 239000011734 sodium Substances 0.000 claims description 23
- 239000010955 niobium Substances 0.000 claims description 19
- 229910052758 niobium Inorganic materials 0.000 claims description 17
- 229910052708 sodium Inorganic materials 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 13
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 10
- 229910001508 alkali metal halide Inorganic materials 0.000 claims description 10
- 150000008045 alkali metal halides Chemical class 0.000 claims description 10
- 229910001507 metal halide Inorganic materials 0.000 claims description 10
- 150000005309 metal halides Chemical class 0.000 claims description 10
- 229910052700 potassium Inorganic materials 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 239000003085 diluting agent Substances 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 239000000155 melt Substances 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 6
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 4
- 239000011591 potassium Substances 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 3
- 229910052717 sulfur Inorganic materials 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 abstract description 10
- 239000000843 powder Substances 0.000 description 61
- 239000002245 particle Substances 0.000 description 50
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 29
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 24
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 22
- 239000011777 magnesium Substances 0.000 description 22
- 239000011575 calcium Substances 0.000 description 20
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 18
- 239000008367 deionised water Substances 0.000 description 18
- 229910021641 deionized water Inorganic materials 0.000 description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 17
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 239000000126 substance Substances 0.000 description 12
- 229910052799 carbon Inorganic materials 0.000 description 11
- 239000003638 chemical reducing agent Substances 0.000 description 11
- 229910052804 chromium Inorganic materials 0.000 description 11
- 229910052742 iron Inorganic materials 0.000 description 11
- 230000007935 neutral effect Effects 0.000 description 11
- 229910052759 nickel Inorganic materials 0.000 description 11
- 239000001103 potassium chloride Substances 0.000 description 11
- 235000011164 potassium chloride Nutrition 0.000 description 11
- 229910052786 argon Inorganic materials 0.000 description 9
- 239000011780 sodium chloride Substances 0.000 description 9
- 238000001816 cooling Methods 0.000 description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 7
- 238000006392 deoxygenation reaction Methods 0.000 description 7
- 239000007795 chemical reaction product Substances 0.000 description 6
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 6
- 238000011084 recovery Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 239000002253 acid Substances 0.000 description 5
- 230000002776 aggregation Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000008188 pellet Substances 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000005054 agglomeration Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229910052500 inorganic mineral Inorganic materials 0.000 description 3
- 235000010755 mineral Nutrition 0.000 description 3
- 239000011707 mineral Substances 0.000 description 3
- -1 niobium metals Chemical class 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- ZYTNDGXGVOZJBT-UHFFFAOYSA-N niobium Chemical compound [Nb].[Nb].[Nb] ZYTNDGXGVOZJBT-UHFFFAOYSA-N 0.000 description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
- 239000011698 potassium fluoride Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000011775 sodium fluoride Substances 0.000 description 2
- 235000013024 sodium fluoride Nutrition 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 102100024133 Coiled-coil domain-containing protein 50 Human genes 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 101000910772 Homo sapiens Coiled-coil domain-containing protein 50 Proteins 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 description 1
- PYLYNBWPKVWXJC-UHFFFAOYSA-N [Nb].[Pb] Chemical compound [Nb].[Pb] PYLYNBWPKVWXJC-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000011403 purification operation Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910000753 refractory alloy Inorganic materials 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
- H01G9/0525—Powder therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
- B22F9/20—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from solid metal compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
- B22F9/24—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21B—MANUFACTURE OF IRON OR STEEL
- C21B15/00—Other processes for the manufacture of iron from iron compounds
- C21B15/006—By a chloride process
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B34/00—Obtaining refractory metals
- C22B34/20—Obtaining niobium, tantalum or vanadium
- C22B34/24—Obtaining niobium or tantalum
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B5/00—General methods of reducing to metals
- C22B5/02—Dry methods smelting of sulfides or formation of mattes
- C22B5/04—Dry methods smelting of sulfides or formation of mattes by aluminium, other metals or silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/10—Reduction of greenhouse gas [GHG] emissions
- Y02P10/134—Reduction of greenhouse gas [GHG] emissions by avoiding CO2, e.g. using hydrogen
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Powder Metallurgy (AREA)
- Manufacture And Refinement Of Metals (AREA)
Abstract
Description
입자크기 | -40/+80메쉬 | -80/+200메쉬 | -200/+325메쉬 | -325/+400메쉬 | -400메쉬 |
% | 1.2 | 64.1 | 18.5 | 10.0 | 6.2 |
입자크기 | -40/+80메쉬 | -80/+200메쉬 | -200/+325메쉬 | -325/+400메쉬 | -400메쉬 |
% | 2.2 | 61.1 | 20.1 | 10.5 | 6.1 |
입자크기 | -40/+80메쉬 | -80/+200메쉬 | -200/+325메쉬 | -325/+400메쉬 | -400메쉬 |
% | 2.0 | 49.1 | 19.2 | 18.6 | 11.1 |
입자크기 | -40/+80메쉬 | -80/+200메쉬 | -200/+325메쉬 | -325/+400메쉬 | -400메쉬 |
% | 5.2 | 51.4 | 18.9 | 10.6 | 13.9 |
입자크기 | -40/+80메쉬 | -80/+200메쉬 | -200/+325메쉬 | -325/+400메쉬 | -400메쉬 |
% | 5.5 | 51.0 | 20.1 | 10.4 | 13.0 |
시료 | DC LnA/CV | CVμFV/g | tg δ% | 그린(Green) 밀도g/cc | 소결된 밀도g/cc |
실시예 1 | 0.95 | 112580 | 67.4 | 5.60 | 5.95 |
실시예 2 | 1.51 | 155800 | 72.6 | 4.75 | 5.16 |
실시예 3 | 0.45 | 102300 | 50.2 | 5.60 | 5.80 |
시료 | DC LnA/CV | CVμFV/g | tg δ% | 그린(Green) 밀도g/cc | 소결된 밀도g/cc |
실시예 5 | 1.30 | 135000 | 70.3 | 2.50 | 2.61 |
실시예 6 | 1.41 | 126500 | 85.1 | 2.50 | 2.7 |
Claims (10)
- 대응되는 탄탈 및/또는 니오비움 산화물들의 환원을 통해 탄탈 및/또는 니오비움 파우더를 제조하는 방법으로서, 상기 환원은, 탄탈 및/또는 니오비움 산화물들을 적어도 하나의 금속 할라이드 및 알칼리 금속과 상승된 온도에서 탄탈 및/또는 니오비움 파우더를 형성하도록 반응시키는 것에 의해 수행되며, 상기 적어도 하나의 금속 할라이드는 Mg, Ca, Sr, Ba 및 Ce의 할라이드로 이루어지는 군으로부터 선택되는, 높은 비표면적을 가지는 탄탈 및/또는 니오비움 파우더의 제조방법.
- 제1항에 있어서, 적어도 하나의 알칼리 금속 할라이드가 환원반응에서 희석제로서 추가적으로 사용되는 것을 특징으로 하는, 높은 비표면적을 가지는 탄탈 및/또는 니오비움 파우더의 제조방법.
- 제1항 또는 제2항에 있어서, 상기 제조방법은,Mg, Ca, Sr, Ba 및 Ce의 할라이드로 이루어지는 군으로부터 선택되는 상기 적어도 하나의 금속 할라이드, 상기 알칼리 금속, 상기 탄탈 및/또는 니오비움 산화물, 및 상기 선택적인 적어도 하나의 추가 알칼리 금속 할라이드를 반응기에 투입하는 단계; 및탄탈 및/또는 니오비움 산화물들이 탄탈 및/또는 니오비움 파우더로 환원되도록 상기 반응기를 충분히 높은 온도로 가열하는 단계를 포함하여 이루어지는 것을 특징으로 하는, 높은 비표면적을 가지는 탄탈 및/또는 니오비움 파우더의 제조방법.
- 제1항 또는 제2항에 있어서, 상기 제조방법은,상기 Mg, Ca, Sr, Ba 및 Ce의 할라이드로 이루어지는 군으로부터 선택되는 적어도 하나의 금속 할라이드, 및 상기 선택적인 적어도 하나의 추가 알칼리 금속 할라이드를 반응기에 투입하는 단계;용융조를 형성하도록 상기 반응기를 가열하여 온도를 상승시키는 단계; 및다음으로, 탄탈 및/또는 니오비움 산화물들이 탄탈 및/또는 니오비움 파우더로 환원되도록 상기 반응기의 온도를 조절하면서, 필요량의 탄탈 및/또는 니오비움 산화물 및 알칼리 금속을 상기 용융조에 계량투입하는 단계를 포함하여 이루어지는 것을 특징으로 하는, 높은 비표면적을 가지는 탄탈 및/또는 니오비움 파우더의 제조방법.
- 제1항 내지 제4항 중 어느 한 항에 있어서, 상기 상승된 온도는 400~1200℃ 범위 내인 것을 특징으로 하는, 높은 비표면적을 가지는 탄탈 및/또는 니오비움 파우더의 제조방법.
- 제5항에 있어서, 상기 상승된 온도는 600~1000℃ 범위 내인 것을 특징으로 하는, 높은 비표면적을 가지는 탄탈 및/또는 니오비움 파우더의 제조방법.
- 제1항 내지 제4항 중 어느 한 항에 있어서, 상기 알칼리 금속은 나트륨 또는 칼륨이며, 알칼리 금속의 사용되는 양은 탄탈 및/또는 니오비움 산화물의 환원을 위한 화학양론적 양의 1.0 내지 1.3배인 것을 특징으로 하는, 높은 비표면적을 가지는 탄탈 및/또는 니오비움 파우더의 제조방법.
- 제1항 내지 제7항 중 어느 한 항에 있어서, 상기 Mg, Ca, Sr, Ba 및 Ce의 할라이드로 이루어진 군으부터 선택되는 금속 할라이드의 사용되는 몰 양은 상기 알칼리 금속의 사용되는 몰 양의 0.5 내지 8.0배인 것을 특징으로 하는, 높은 비표면적을 가지는 탄탈 및/또는 니오비움 파우더의 제조방법.
- 제1항 내지 제4항 중 어느 한 항에 있어서, 상기 탄탈 및/또는 니오비움 산화물은, 5 또는 그보다 작은 가수를 갖는 탄탈의 산화물들, 5 또는 그보다 작은 가수를 갖는 니오비움의 산화물들, 및 이들의 혼합물들로부터 선택되는 것을 특징으로 하는, 높은 비표면적을 가지는 탄탈 및/또는 니오비움 파우더의 제조방법.
- 제1항 내지 제4항 중 어느 한 항에 있어서, N, P, S, B 또는 Si를 함유하는 도펀트를 환원반응에 사용되는 상기 원료 물질들에, 및/또는 환원반응 동안에, 및/또는 환원반응 후에 첨가하는 단계를 더 포함하는 것을 특징으로 하는, 높은 비표면적을 가지는 탄탈 및/또는 니오비움 파우더의 제조방법.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB011353252A CN1169643C (zh) | 2001-09-29 | 2001-09-29 | 高比表面积钽粉和/或铌粉的制备方法 |
CN01135325.2 | 2001-09-29 | ||
PCT/CN2002/000700 WO2003068435A1 (fr) | 2001-09-29 | 2002-09-29 | Procede de preparation de poudre de tantale et/ou de poudre de niobium a surface active specifique elevee |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050009274A true KR20050009274A (ko) | 2005-01-24 |
KR100785153B1 KR100785153B1 (ko) | 2007-12-11 |
Family
ID=4673123
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020047004466A KR100785153B1 (ko) | 2001-09-29 | 2002-09-29 | 높은 비표면적을 가지는 탄탈 파우더 및/또는 니오비움파우더의 제조방법 |
Country Status (10)
Country | Link |
---|---|
US (1) | US6786951B2 (ko) |
JP (1) | JP4756825B2 (ko) |
KR (1) | KR100785153B1 (ko) |
CN (1) | CN1169643C (ko) |
AU (1) | AU2002335301A1 (ko) |
CZ (1) | CZ300132B6 (ko) |
DE (1) | DE10297448B4 (ko) |
GB (1) | GB2396161B (ko) |
IL (2) | IL161076A0 (ko) |
WO (1) | WO2003068435A1 (ko) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100684416B1 (ko) * | 2005-07-29 | 2007-02-16 | 한국원자력연구소 | 커패시터용 탄탈 또는 니오븀 분말의 제조방법 |
KR20120065309A (ko) * | 2009-06-25 | 2012-06-20 | 닝시아 오리엔트 탄탈럼 인더스트리 코포레이션 엘티디 | 커패시터용 탄탈륨 분말의 제조방법 |
KR20190111496A (ko) * | 2018-03-23 | 2019-10-02 | 충남대학교산학협력단 | 수소화물 매개 금속 열 환원 공정에 의한 금속 나노분말 제조 방법 |
KR20210086542A (ko) * | 2019-12-30 | 2021-07-08 | 충남대학교산학협력단 | 연소 반응을 이용한 금속 나노분말 제조방법 |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6375704B1 (en) * | 1999-05-12 | 2002-04-23 | Cabot Corporation | High capacitance niobium powders and electrolytic capacitor anodes |
US7149074B2 (en) * | 2001-04-19 | 2006-12-12 | Cabot Corporation | Methods of making a niobium metal oxide |
JP3610942B2 (ja) * | 2001-10-12 | 2005-01-19 | 住友金属鉱山株式会社 | ニオブおよび/またはタンタルの粉末の製造法 |
DE10332033A1 (de) * | 2003-07-15 | 2005-02-03 | Chemetall Gmbh | Verfahren zur Herstellung von Metallpulvern, bzw. von Metallhydridpulvern der Elemente Ti, Zr, Hf, V, Nb, Ta und Cr |
ATE554490T1 (de) * | 2003-11-10 | 2012-05-15 | Showa Denko Kk | Niobpulver für einen kondensator, niob- gesinterter körper und kondensator |
JPWO2005046912A1 (ja) * | 2003-11-12 | 2007-05-31 | キャボットスーパーメタル株式会社 | 金属タンタルもしくはニオブの製造方法 |
DE102004020052B4 (de) * | 2004-04-23 | 2008-03-06 | H.C. Starck Gmbh | Verfahren zur Herstellung von Niob- und Tantalpulver |
US20080011124A1 (en) * | 2004-09-08 | 2008-01-17 | H.C. Starck Gmbh & Co. Kg | Deoxidation of Valve Metal Powders |
US7431751B2 (en) * | 2004-09-29 | 2008-10-07 | H.C. Starck Inc. | Magnesium removal from magnesium reduced metal powders |
DE102004049039B4 (de) * | 2004-10-08 | 2009-05-07 | H.C. Starck Gmbh | Verfahren zur Herstellung feinteiliger Ventilmetallpulver |
DE102004049040B4 (de) * | 2004-10-08 | 2008-11-27 | H.C. Starck Gmbh | Verfahren zur Herstellung von Festelektrolytkondensatoren |
US7594937B2 (en) * | 2004-11-29 | 2009-09-29 | Showa Denko K.K. | Porous anode body for solid electrolytic capacitor, production method thereof and solid electrolytic capacitor |
WO2006089222A2 (en) * | 2005-02-18 | 2006-08-24 | Nanomat, Inc. | Metal nano-powder compositions and methods for preparing same |
JP5197369B2 (ja) * | 2005-09-29 | 2013-05-15 | ニンシア オリエント タンタル インダストリー カンパニー、 リミテッド | 金属粒子を球状に造粒し塊成化する方法 |
GB2450669B (en) * | 2006-05-05 | 2012-03-21 | Cabot Corp | Tantalam powder and methods of manufacturing same |
US20070295609A1 (en) * | 2006-06-23 | 2007-12-27 | Korea Atomic Energy Research Institute | Method for preparing tantalum or niobium powders used for manufacturing capacitors |
CN101182602B (zh) * | 2006-11-14 | 2010-04-14 | 宁夏东方钽业股份有限公司 | 粉末冶金用钽和/或铌粉末及其制备方法 |
CN100577574C (zh) | 2007-08-25 | 2010-01-06 | 宁夏东方钽业股份有限公司 | 低价氧化铌或铌粉的制备方法 |
JP4868601B2 (ja) * | 2007-12-05 | 2012-02-01 | Necトーキン株式会社 | 固体電解コンデンサ及びその製造方法 |
JP2009164412A (ja) * | 2008-01-08 | 2009-07-23 | Kobe Steel Ltd | 多孔質金属薄膜およびその製造方法、ならびにコンデンサ |
CN100528418C (zh) * | 2008-01-11 | 2009-08-19 | 宁夏东方钽业股份有限公司 | 含氮均匀的阀金属粉末及其制造方法,阀金属坯块和阀金属烧结体以及电解电容器的阳极 |
CN101491834B (zh) * | 2009-03-05 | 2012-06-20 | 宁夏东方钽业股份有限公司 | 钽粉的制备方法 |
CN102191389B (zh) * | 2011-04-19 | 2013-09-25 | 潘伦桃 | 钠还原氟钽酸钾产物的水洗方法 |
CN103687685A (zh) * | 2011-05-16 | 2014-03-26 | 波士顿电子材料有限公司 | 金属粉末和合金的制造和应用 |
WO2013006600A1 (en) * | 2011-07-05 | 2013-01-10 | Orchard Material Technology, Llc | Retrieval of high value refractory metals from alloys and mixtures |
CZ2012646A3 (cs) | 2012-09-19 | 2014-02-19 | Vysoké Učení Technické V Brně | Způsob přípravy magneticky vodivých prášků s využitím kavitace a zařízení k provádění tohoto způsobu |
CN104379792B (zh) * | 2013-02-26 | 2016-11-16 | 宁夏东方钽业股份有限公司 | 一种电容器级钽铌合金丝材用粉料及其制备方法 |
JP6503353B2 (ja) | 2013-08-19 | 2019-04-17 | ザ ユニバーシティ オブ ユタ リサーチ ファウンデイション | チタン生成物の製造 |
JP6568104B2 (ja) * | 2014-05-13 | 2019-08-28 | ザ ユニバーシティ オブ ユタ リサーチ ファウンデイション | 実質的に球状の金属粉末の製造 |
US10290430B2 (en) | 2014-11-24 | 2019-05-14 | Avx Corporation | Wet Electrolytic Capacitor for an Implantable Medical Device |
EP3227038A4 (en) * | 2014-12-02 | 2018-08-22 | University of Utah Research Foundation | Molten salt de-oxygenation of metal powders |
US9786440B2 (en) | 2014-12-17 | 2017-10-10 | Avx Corporation | Anode for use in a high voltage electrolytic capacitor |
US10245642B2 (en) * | 2015-02-23 | 2019-04-02 | Nanoscale Powders LLC | Methods for producing metal powders |
WO2016192049A1 (zh) * | 2015-06-03 | 2016-12-08 | 宁夏东方钽业股份有限公司 | 一种微细钽粉及其制备方法 |
CN105458284B (zh) * | 2015-11-27 | 2018-01-02 | 王娜 | 一种熔盐中金属热还原合成纳米硬质合金粉末的方法 |
RU2649099C2 (ru) * | 2016-06-27 | 2018-03-29 | Федеральное государственное бюджетное учреждение науки Федеральный исследовательский центр "Кольский научный центр Российской академии наук" (ФИЦ КНЦ РАН) | Способ получения порошка вентильного металла |
US10737101B2 (en) | 2016-11-14 | 2020-08-11 | Avx Corporation | Medical device containing a solid electrolytic capacitor |
US10431389B2 (en) | 2016-11-14 | 2019-10-01 | Avx Corporation | Solid electrolytic capacitor for high voltage environments |
US10832871B2 (en) | 2016-11-14 | 2020-11-10 | Avx Corporation | Wet electrolytic capacitor for an implantable medical device |
WO2019113055A1 (en) | 2017-12-05 | 2019-06-13 | Avx Corporation | Wet electrolytic capacitor for an implantable medical device |
US10907239B1 (en) | 2020-03-16 | 2021-02-02 | University Of Utah Research Foundation | Methods of producing a titanium alloy product |
US11450486B2 (en) | 2020-04-03 | 2022-09-20 | Greatbatch Ltd. | Electrolytic capacitor having a tantalum anode |
CN113500204A (zh) * | 2021-07-08 | 2021-10-15 | 安徽理工大学 | 一种氯化钙熔盐中钙热还原氯化铌制备细微铌粉的方法 |
CN114210973B (zh) * | 2021-12-15 | 2023-03-24 | 宁夏东方钽业股份有限公司 | 一种钽粉的生产方法以及由该方法得到的钽粉 |
CN117020215A (zh) * | 2021-12-15 | 2023-11-10 | 宁夏东方钽业股份有限公司 | 采用碱土金属还原氧化钽生产电容器用钽粉的方法 |
CN115570127B (zh) * | 2022-10-11 | 2023-07-21 | 江门富祥电子材料有限公司 | 一种钽粉的制备方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3012877A (en) * | 1958-06-20 | 1961-12-12 | Nat Distillers Chem Corp | Method of producing columbium and tantalum |
JPS5014604B1 (ko) * | 1970-12-24 | 1975-05-29 | ||
US3803257A (en) * | 1973-06-14 | 1974-04-09 | Texaco Inc | Olefin treatment by solvent extraction |
US4009007A (en) * | 1975-07-14 | 1977-02-22 | Fansteel Inc. | Tantalum powder and method of making the same |
US4149876A (en) * | 1978-06-06 | 1979-04-17 | Fansteel Inc. | Process for producing tantalum and columbium powder |
US4445931A (en) * | 1980-10-24 | 1984-05-01 | The United States Of America As Represented By The Secretary Of The Interior | Production of metal powder |
DE3140248C2 (de) * | 1981-10-09 | 1986-06-19 | Hermann C. Starck Berlin, 1000 Berlin | Verwendung von dotiertem Ventilmetallpulver für die Herstellung von Elektrolytkondensatoranoden |
DE3330455A1 (de) * | 1983-08-24 | 1985-03-14 | GfE Gesellschaft für Elektrometallurgie mbH, 4000 Düsseldorf | Verfahren zur herstellung von ventilmetallpulver fuer elektrolytkondensatoren und dergleichen |
JPS60145304A (ja) * | 1984-01-09 | 1985-07-31 | Showa Kiyabotsuto Suupaa Metal Kk | タンタル粉末の製造法 |
US4508563A (en) * | 1984-03-19 | 1985-04-02 | Sprague Electric Company | Reducing the oxygen content of tantalum |
RU2089350C1 (ru) * | 1990-05-17 | 1997-09-10 | Кабот Корпорейшн | Способ получения танталового порошка |
US6171363B1 (en) * | 1998-05-06 | 2001-01-09 | H. C. Starck, Inc. | Method for producing tantallum/niobium metal powders by the reduction of their oxides with gaseous magnesium |
CN1069564C (zh) * | 1998-07-07 | 2001-08-15 | 宁夏有色金属冶炼厂 | 钽粉末的制造方法 |
DE19847012A1 (de) * | 1998-10-13 | 2000-04-20 | Starck H C Gmbh Co Kg | Niobpulver und Verfahren zu dessen Herstellung |
JP3610942B2 (ja) * | 2001-10-12 | 2005-01-19 | 住友金属鉱山株式会社 | ニオブおよび/またはタンタルの粉末の製造法 |
-
2001
- 2001-09-29 CN CNB011353252A patent/CN1169643C/zh not_active Expired - Lifetime
-
2002
- 2002-09-29 GB GB0407844A patent/GB2396161B/en not_active Expired - Lifetime
- 2002-09-29 KR KR1020047004466A patent/KR100785153B1/ko active IP Right Grant
- 2002-09-29 CZ CZ20040547A patent/CZ300132B6/cs not_active IP Right Cessation
- 2002-09-29 IL IL16107602A patent/IL161076A0/xx unknown
- 2002-09-29 JP JP2003567609A patent/JP4756825B2/ja not_active Expired - Lifetime
- 2002-09-29 DE DE10297448T patent/DE10297448B4/de not_active Expired - Lifetime
- 2002-09-29 AU AU2002335301A patent/AU2002335301A1/en not_active Abandoned
- 2002-09-29 WO PCT/CN2002/000700 patent/WO2003068435A1/zh active Application Filing
- 2002-09-30 US US10/262,229 patent/US6786951B2/en not_active Expired - Lifetime
-
2004
- 2004-03-25 IL IL161076A patent/IL161076A/en active IP Right Grant
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100684416B1 (ko) * | 2005-07-29 | 2007-02-16 | 한국원자력연구소 | 커패시터용 탄탈 또는 니오븀 분말의 제조방법 |
KR20120065309A (ko) * | 2009-06-25 | 2012-06-20 | 닝시아 오리엔트 탄탈럼 인더스트리 코포레이션 엘티디 | 커패시터용 탄탈륨 분말의 제조방법 |
KR20190111496A (ko) * | 2018-03-23 | 2019-10-02 | 충남대학교산학협력단 | 수소화물 매개 금속 열 환원 공정에 의한 금속 나노분말 제조 방법 |
KR20210086542A (ko) * | 2019-12-30 | 2021-07-08 | 충남대학교산학협력단 | 연소 반응을 이용한 금속 나노분말 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
AU2002335301A1 (en) | 2003-09-04 |
DE10297448B4 (de) | 2008-09-25 |
US20030110890A1 (en) | 2003-06-19 |
GB2396161A (en) | 2004-06-16 |
CN1169643C (zh) | 2004-10-06 |
JP4756825B2 (ja) | 2011-08-24 |
IL161076A (en) | 2010-04-29 |
US6786951B2 (en) | 2004-09-07 |
KR100785153B1 (ko) | 2007-12-11 |
CN1410209A (zh) | 2003-04-16 |
CZ300132B6 (cs) | 2009-02-18 |
DE10297448T5 (de) | 2004-10-14 |
IL161076A0 (en) | 2004-08-31 |
WO2003068435A1 (fr) | 2003-08-21 |
CZ2004547A3 (cs) | 2005-01-12 |
GB0407844D0 (en) | 2004-05-12 |
JP2005517091A (ja) | 2005-06-09 |
GB2396161B (en) | 2004-11-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100785153B1 (ko) | 높은 비표면적을 가지는 탄탈 파우더 및/또는 니오비움파우더의 제조방법 | |
CN112105471B (zh) | 含有球形粉末的阳极和电容器 | |
KR101629816B1 (ko) | 커패시터용 탄탈륨 분말의 제조방법 | |
US7204866B2 (en) | Niobium or tantalum powder and method for production thereof, and solid electrolytic capacitor | |
JP4187953B2 (ja) | 窒素含有金属粉末の製造方法 | |
CN111819016A (zh) | 球形钽粉末、含其的产品以及其制造方法 | |
WO1994025971A1 (en) | A process for making an improved tantalum powder and high capacitance low leakage electrode made therefrom | |
KR20020092362A (ko) | 질소함유 탄탈룸 또는 니오브 분말의 제조방법 및 고체전해 캐패시터 | |
JP2010536708A (ja) | ニオブ亜酸化物又はニオブの粉末を調製するための方法 | |
EP1891651B1 (en) | Capacitor | |
US4356028A (en) | In situ phosphorus addition to tantalum | |
KR101115820B1 (ko) | 축전기의 제조 방법 | |
US7208027B2 (en) | Niobium powder for capacitor, sintered body thereof and capacitor using the sintered body | |
CN104495929A (zh) | 低价氧化铌粉末及其制备方法 | |
EP1561531A1 (en) | Niobium powder, process for producing the same and solid electrolytic capacitor therefrom | |
JP2008095200A (ja) | 窒素含有金属粉末およびその製造方法ならびにそれを用いた多孔質焼結体および固体電解コンデンサ | |
JPH0435549B2 (ko) | ||
JP2009275289A (ja) | 窒素含有金属粉末の製造方法 | |
JP2016166422A (ja) | 窒素含有金属粉末の製造方法 | |
JPWO2006062234A1 (ja) | 金属粉末および多孔質焼結体の製造方法、金属粉末、およびコンデンサ | |
JP2014218748A (ja) | 窒素含有金属粉末の製造方法 | |
JP2013136841A (ja) | 窒素含有金属粉末の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
G170 | Re-publication after modification of scope of protection [patent] | ||
FPAY | Annual fee payment |
Payment date: 20121130 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20131119 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20141124 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20161206 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20171117 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20181115 Year of fee payment: 12 |