KR20050005801A - 진공 증착 장치 - Google Patents
진공 증착 장치 Download PDFInfo
- Publication number
- KR20050005801A KR20050005801A KR1020040052156A KR20040052156A KR20050005801A KR 20050005801 A KR20050005801 A KR 20050005801A KR 1020040052156 A KR1020040052156 A KR 1020040052156A KR 20040052156 A KR20040052156 A KR 20040052156A KR 20050005801 A KR20050005801 A KR 20050005801A
- Authority
- KR
- South Korea
- Prior art keywords
- chamber
- moving
- vacuum
- evaporation source
- deposition apparatus
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (10)
- 워크 표면에 증발원으로부터 증발한 물질을 증착하여 피막을 형성하는 진공 증착 장치이며,고정 챔버부 및 상기 고정 챔버부에 대해 연결 분리 가능하게 설치된 이동 챔버부로 이루어지는 진공 챔버와,상기 고정 챔버부에 부착된 로드형의 증발원과,상기 이동 챔버부에 부착된 워크 지지 수단과,상기 증발원이 상기 진공 챔버 밖으로 이동하여 후퇴한 상태에서 상기 이동 챔버부를 상기 고정 챔버부에 대해 연결 분리 가능하게 수평 이동시키는 수평 이동 수단으로 이루어지고,상기 증발원은 상기 진공 챔버 내외로 이동 가능하게 설치되어 있고, 상기 워크 지지 수단은 상기 진공 챔버 내로 이동한 상기 증발원에 대해 상기 증발원을 둘러싸도록 배치되는 상기 워크를 지지하는 진공 증착 장치.
- 제1항에 있어서, 상기 이동 챔버부와 상기 수평 이동 수단으로 이루어지는 세트를 2 세트 이상 설치하고 있는 진공 증착 장치.
- 제1항에 있어서, 상기 수평 이동 수단은 선회축을 중심으로 하여 상기 이동 챔버부를 선회시켜 수평 방향으로 이동시키는 진공 증착 장치.
- 제2항에 있어서, 상기 2 세트 이상의 세트 중 적어도 1 세트에 있어서, 상기 수평 이동 수단은 선회축을 중심으로 하여 상기 이동 챔버부를 선회시켜 수평 방향으로 이동시키는 진공 증착 장치.
- 제1항에 있어서, 상기 수평 이동 수단은 상기 이동 챔버부를 수평 방향으로 직선적으로 이동시키는 진공 증착 장치.
- 제1항에 있어서, 상기 진공 챔버는 전체적으로서 통형의 동체부와, 상기 동체부의 상부 개구 및 하부 개구를 폐색하는 상부 덮개 및 하부 덮개를 갖고, 상기 고정 챔버부는 상기 상부 덮개에 있어서 진공 챔버의 중심선을 통하는 중심부를 포함하는 상부 덮개 고정부를 포함하고, 상기 이동 챔버부는 상기 하부 덮개에 있어서 진공 챔버의 중심선을 통하는 중심부를 포함하는 하부 덮개 이동부를 포함하고, 상기 고정 챔버부와 이동 챔버부는 상기 동체부의 중앙부를 통하는 분할면에 의해 분할되어 있는 진공 증착 장치.
- 제1항에 있어서, 상기 워크 지지 수단은 상기 증발원의 중심선을 회전 중심으로 하는 회전 테이블과, 상기 회전 테이블의 외주 상부에 각각 회전 가능하게 세워 설치된 복수의 워크 보유 지지구를 갖는 진공 증착 장치.
- 제1항에 있어서, 상기 이동 챔버부는 상기 증발원으로부터 증발된 물질이 상기 진공 챔버의 내면에 부착되는 것을 방지하기 위한 실드판을 구비하고 있는 진공 증착 장치.
- 제1항에 있어서, 상기 이동 챔버부는 상기 증발원 사이에서 아크 방전을 발생시키기 위한 양극판을 구비하고 있는 진공 증착 장치.
- 제1항에 있어서, 상기 이동 챔버부는 워크 가열용의 히터를 구비하고 있는 진공 증착 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2003-00271248 | 2003-07-07 | ||
JP2003271248A JP4199062B2 (ja) | 2003-07-07 | 2003-07-07 | 真空蒸着装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050005801A true KR20050005801A (ko) | 2005-01-14 |
KR100642175B1 KR100642175B1 (ko) | 2006-11-03 |
Family
ID=33448035
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040052156A KR100642175B1 (ko) | 2003-07-07 | 2004-07-06 | 진공 증착 장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7131392B2 (ko) |
EP (1) | EP1496136B1 (ko) |
JP (1) | JP4199062B2 (ko) |
KR (1) | KR100642175B1 (ko) |
CN (1) | CN1322162C (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150058005A (ko) * | 2013-11-18 | 2015-05-28 | 가부시키가이샤 고베 세이코쇼 | 성막 장치 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100667598B1 (ko) * | 2005-02-25 | 2007-01-12 | 주식회사 아이피에스 | 반도체 처리 장치 |
EP1713110B1 (de) * | 2005-04-08 | 2016-03-09 | Applied Materials GmbH & Co. KG | Anlage zum Beschichten eines Substrats und Modul |
JP4642608B2 (ja) * | 2005-08-31 | 2011-03-02 | 東京エレクトロン株式会社 | 基板処理装置および基板処理システム |
DE202006007937U1 (de) * | 2006-05-18 | 2007-09-20 | Strämke, Siegfried, Dr.-Ing. | Plasmabehandlungsanlage |
KR20080057080A (ko) * | 2006-12-19 | 2008-06-24 | 삼성전자주식회사 | 증착장치 및 증착방법 |
JP5216659B2 (ja) * | 2009-03-30 | 2013-06-19 | 新明和工業株式会社 | 真空成膜装置 |
KR101020773B1 (ko) | 2009-06-16 | 2011-03-09 | 주식회사 메코텍 | 아크 이온 플레이팅 장치 |
DE102010032591A1 (de) * | 2010-07-23 | 2012-01-26 | Leybold Optics Gmbh | Vorrichtung und Verfahren zur Vakuumbeschichtung |
CN102051590B (zh) * | 2010-12-29 | 2014-11-26 | 湖南菲尔姆真空设备有限公司 | 发电用太阳能高温集热管镀膜方法及卧式镀膜机 |
JP5847054B2 (ja) * | 2012-10-11 | 2016-01-20 | 株式会社神戸製鋼所 | 成膜装置 |
CN102994957B (zh) * | 2012-11-06 | 2014-09-03 | 上海宏昊企业发展有限公司 | 无扩散泵式复合膜镀膜机 |
KR101456186B1 (ko) * | 2012-12-28 | 2014-10-31 | 엘아이지에이디피 주식회사 | 유기물질 증착장비 |
CN103602950B (zh) * | 2013-09-17 | 2016-06-01 | 京东方科技集团股份有限公司 | 蒸发源装置及蒸发源设备 |
CN107587111B (zh) * | 2017-09-30 | 2019-04-02 | 京东方科技集团股份有限公司 | 蒸镀设备 |
CN111863655B (zh) * | 2019-04-26 | 2024-04-12 | 北京北方华创微电子装备有限公司 | 开盖机构及半导体加工设备 |
CN110218976A (zh) * | 2019-07-17 | 2019-09-10 | 南通职业大学 | 一种零部件自动镀膜装置 |
CN110438459B (zh) * | 2019-08-14 | 2023-08-22 | 湖南众源科技有限公司 | 一种卧式真空镀膜机 |
CN110760808B (zh) * | 2019-12-10 | 2023-10-31 | 湘潭宏大真空技术股份有限公司 | 一种曲面屏磁控溅射组件 |
US20220228254A1 (en) * | 2020-03-18 | 2022-07-21 | Thermalytica, Inc. | Vapor deposition device |
CN112626478B (zh) * | 2020-12-15 | 2022-10-28 | 江门豪达电子科技有限公司 | 电子材料表面镀膜处理设备及其镀膜处理方法 |
Family Cites Families (14)
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GB1082562A (en) | 1965-03-05 | 1967-09-06 | Edwards High Vacuum Int Ltd | Improvements in or relating to a method of coating both sides of a plurality of workpieces by vapour deposition |
JPS5913068A (ja) * | 1982-07-09 | 1984-01-23 | Tokuda Seisakusho Ltd | スパツタリング装置 |
JPH04329881A (ja) * | 1991-05-01 | 1992-11-18 | Canon Inc | マイクロ波プラズマcvd法による堆積膜形成装置 |
JPH0673538A (ja) * | 1992-05-26 | 1994-03-15 | Kobe Steel Ltd | アークイオンプレーティング装置 |
KR940004118B1 (ko) * | 1992-06-27 | 1994-05-13 | 아니코산업 주식회사 | 멀티 에젝터형(multi ejector)오염 및 유독개스 세정장치 및 그 방법 |
DE69432165T2 (de) * | 1993-03-15 | 2003-12-11 | Kobe Steel Ltd | Vorrichtung und system zum lichtbogenionenplattieren |
JP3195492B2 (ja) | 1993-03-15 | 2001-08-06 | 株式会社神戸製鋼所 | アークイオンプレーティング装置及びアークイオンプレーティングシステム |
JPH08100253A (ja) * | 1994-09-30 | 1996-04-16 | Kuramoto Seisakusho:Kk | 真空成膜装置 |
JP3689465B2 (ja) * | 1995-11-30 | 2005-08-31 | 日本ピストンリング株式会社 | 回転式コンプレッサ用ベーンの物理蒸着膜形成方法および装置 |
ES2188006T3 (es) * | 1997-09-29 | 2003-06-16 | Unaxis Trading Ag | Instalacion de recubrimiento a vacio y disposicion de acoplamiento y procedimiento para la fabricacion de piezas de trabajo. |
US6296747B1 (en) | 2000-06-22 | 2001-10-02 | Applied Materials, Inc. | Baffled perforated shield in a plasma sputtering reactor |
JP2002020860A (ja) * | 2000-07-06 | 2002-01-23 | Nissin Electric Co Ltd | 真空アーク蒸発源およびそれを用いた膜形成装置 |
US20030111342A1 (en) | 2001-12-18 | 2003-06-19 | Compuvac Systems, Inc. | Sputter coating apparatus |
DE60226718D1 (de) * | 2002-07-08 | 2008-07-03 | Galileo Vacuum Systems S R L | Vorrichtung zur chargenweisen Vakuumbeschichtung von Gegenständen |
-
2003
- 2003-07-07 JP JP2003271248A patent/JP4199062B2/ja not_active Expired - Lifetime
-
2004
- 2004-06-30 US US10/879,584 patent/US7131392B2/en active Active
- 2004-07-06 KR KR1020040052156A patent/KR100642175B1/ko active IP Right Grant
- 2004-07-06 EP EP04015915A patent/EP1496136B1/en not_active Expired - Fee Related
- 2004-07-07 CN CNB2004100637139A patent/CN1322162C/zh not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150058005A (ko) * | 2013-11-18 | 2015-05-28 | 가부시키가이샤 고베 세이코쇼 | 성막 장치 |
Also Published As
Publication number | Publication date |
---|---|
US20050005860A1 (en) | 2005-01-13 |
JP4199062B2 (ja) | 2008-12-17 |
EP1496136A1 (en) | 2005-01-12 |
CN1576388A (zh) | 2005-02-09 |
KR100642175B1 (ko) | 2006-11-03 |
EP1496136B1 (en) | 2011-09-21 |
US7131392B2 (en) | 2006-11-07 |
JP2005029848A (ja) | 2005-02-03 |
CN1322162C (zh) | 2007-06-20 |
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