KR20040091037A - 회로 제조용 개구 마스크 - Google Patents
회로 제조용 개구 마스크 Download PDFInfo
- Publication number
- KR20040091037A KR20040091037A KR10-2004-7012543A KR20047012543A KR20040091037A KR 20040091037 A KR20040091037 A KR 20040091037A KR 20047012543 A KR20047012543 A KR 20047012543A KR 20040091037 A KR20040091037 A KR 20040091037A
- Authority
- KR
- South Korea
- Prior art keywords
- mask
- deposition
- pattern
- substrate
- opening mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title description 14
- 238000000151 deposition Methods 0.000 claims abstract description 253
- 239000000463 material Substances 0.000 claims abstract description 74
- 239000004065 semiconductor Substances 0.000 claims abstract description 70
- 238000000034 method Methods 0.000 claims abstract description 54
- 230000008021 deposition Effects 0.000 claims description 222
- 239000000758 substrate Substances 0.000 claims description 135
- 238000005137 deposition process Methods 0.000 claims description 27
- 235000012431 wafers Nutrition 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 230000000295 complement effect Effects 0.000 claims description 10
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- 230000015654 memory Effects 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 9
- 238000000206 photolithography Methods 0.000 abstract description 8
- 239000010409 thin film Substances 0.000 description 36
- 230000008569 process Effects 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005755 formation reaction Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 238000005019 vapor deposition process Methods 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052755 nonmetal Inorganic materials 0.000 description 4
- 238000000608 laser ablation Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000109 continuous material Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011364 vaporized material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Picture Signal Circuits (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Electron Beam Exposure (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/076,003 | 2002-02-14 | ||
| US10/076,003 US20030151118A1 (en) | 2002-02-14 | 2002-02-14 | Aperture masks for circuit fabrication |
| PCT/US2003/001751 WO2003069014A1 (en) | 2002-02-14 | 2003-01-21 | Aperture masks for circuit fabrication |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20040091037A true KR20040091037A (ko) | 2004-10-27 |
Family
ID=27660170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2004-7012543A Withdrawn KR20040091037A (ko) | 2002-02-14 | 2003-01-21 | 회로 제조용 개구 마스크 |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US20030151118A1 (enExample) |
| EP (2) | EP2060654A1 (enExample) |
| JP (1) | JP2005518478A (enExample) |
| KR (1) | KR20040091037A (enExample) |
| CN (1) | CN1633515B (enExample) |
| AT (1) | ATE431440T1 (enExample) |
| AU (1) | AU2003209312A1 (enExample) |
| DE (1) | DE60327597D1 (enExample) |
| WO (1) | WO2003069014A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100687761B1 (ko) * | 2006-03-06 | 2007-02-27 | 한국전자통신연구원 | 대량생산을 위한 분자 전자 소자 제조용 소자 홀더 및 이를이용한 분자 전자 소자의 제조 방법 |
Families Citing this family (67)
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|---|---|---|---|---|
| DE60126779T2 (de) | 2000-03-24 | 2007-12-13 | Cymbet Corp., Elk River | Herstellung bei niedriger temperatur von dünnschicht- energiespeichervorrichtungen |
| US6897164B2 (en) * | 2002-02-14 | 2005-05-24 | 3M Innovative Properties Company | Aperture masks for circuit fabrication |
| US6821348B2 (en) * | 2002-02-14 | 2004-11-23 | 3M Innovative Properties Company | In-line deposition processes for circuit fabrication |
| US6667215B2 (en) | 2002-05-02 | 2003-12-23 | 3M Innovative Properties | Method of making transistors |
| US7088145B2 (en) * | 2002-12-23 | 2006-08-08 | 3M Innovative Properties Company | AC powered logic circuitry |
| US7294209B2 (en) | 2003-01-02 | 2007-11-13 | Cymbet Corporation | Apparatus and method for depositing material onto a substrate using a roll-to-roll mask |
| US7603144B2 (en) | 2003-01-02 | 2009-10-13 | Cymbet Corporation | Active wireless tagging system on peel and stick substrate |
| US6906436B2 (en) | 2003-01-02 | 2005-06-14 | Cymbet Corporation | Solid state activity-activated battery device and method |
| US7279777B2 (en) * | 2003-05-08 | 2007-10-09 | 3M Innovative Properties Company | Organic polymers, laminates, and capacitors |
| US7098525B2 (en) * | 2003-05-08 | 2006-08-29 | 3M Innovative Properties Company | Organic polymers, electronic devices, and methods |
| JP2005042133A (ja) * | 2003-07-22 | 2005-02-17 | Seiko Epson Corp | 蒸着マスク及びその製造方法、表示装置及びその製造方法、表示装置を備えた電子機器 |
| US20070178710A1 (en) * | 2003-08-18 | 2007-08-02 | 3M Innovative Properties Company | Method for sealing thin film transistors |
| US20050079418A1 (en) * | 2003-10-14 | 2005-04-14 | 3M Innovative Properties Company | In-line deposition processes for thin film battery fabrication |
| US7211351B2 (en) | 2003-10-16 | 2007-05-01 | Cymbet Corporation | Lithium/air batteries with LiPON as separator and protective barrier and method |
| US20050130422A1 (en) * | 2003-12-12 | 2005-06-16 | 3M Innovative Properties Company | Method for patterning films |
| US7078937B2 (en) | 2003-12-17 | 2006-07-18 | 3M Innovative Properties Company | Logic circuitry powered by partially rectified ac waveform |
| US6882897B1 (en) * | 2004-01-05 | 2005-04-19 | Dennis S. Fernandez | Reconfigurable garment definition and production method |
| CN1957487A (zh) | 2004-01-06 | 2007-05-02 | Cymbet公司 | 具有一个或者更多个可限定层的层式阻挡物结构和方法 |
| CN100431169C (zh) * | 2004-01-15 | 2008-11-05 | 松下电器产业株式会社 | 场效应晶体管及使用该晶体管的显示器件 |
| CN102097458B (zh) | 2004-06-04 | 2013-10-30 | 伊利诺伊大学评议会 | 用于制造并组装可印刷半导体元件的方法和设备 |
| TWI270741B (en) * | 2004-07-28 | 2007-01-11 | Remarkable Ltd | Mask for decreasing the fabrication cost and method for design the same |
| US7399668B2 (en) * | 2004-09-30 | 2008-07-15 | 3M Innovative Properties Company | Method for making electronic devices having a dielectric layer surface treatment |
| US20060128165A1 (en) * | 2004-12-13 | 2006-06-15 | 3M Innovative Properties Company | Method for patterning surface modification |
| US7679686B2 (en) * | 2004-12-30 | 2010-03-16 | E. I. Du Pont De Nemours And Company | Electronic device comprising a gamma correction unit, a process for using the electronic device, and a data processing system readable medium |
| US7211679B2 (en) * | 2005-03-09 | 2007-05-01 | 3M Innovative Properties Company | Perfluoroether acyl oligothiophene compounds |
| US7151276B2 (en) * | 2005-03-09 | 2006-12-19 | 3M Innovative Properties Company | Semiconductors containing perfluoroether acyl oligothiophene compounds |
| US7667929B2 (en) * | 2005-04-04 | 2010-02-23 | Hitachi Global Storage Technologies Netherlands B.V. | Apparatus, method and system for fabricating a patterned media imprint master |
| JP5159053B2 (ja) * | 2005-06-30 | 2013-03-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US7776478B2 (en) | 2005-07-15 | 2010-08-17 | Cymbet Corporation | Thin-film batteries with polymer and LiPON electrolyte layers and method |
| WO2007011900A1 (en) | 2005-07-15 | 2007-01-25 | Cymbet Corporation | Thin-film batteries with soft and hard electrolyte layers and method |
| US7319153B2 (en) * | 2005-07-29 | 2008-01-15 | 3M Innovative Properties Company | 6,13-Bis(thienyl)pentacene compounds |
| US7615501B2 (en) * | 2005-08-11 | 2009-11-10 | 3M Innovative Properties Company | Method for making a thin film layer |
| US20070137568A1 (en) * | 2005-12-16 | 2007-06-21 | Schreiber Brian E | Reciprocating aperture mask system and method |
| US7763114B2 (en) * | 2005-12-28 | 2010-07-27 | 3M Innovative Properties Company | Rotatable aperture mask assembly and deposition system |
| US7667230B2 (en) * | 2006-03-31 | 2010-02-23 | 3M Innovative Properties Company | Electronic devices containing acene-thiophene copolymers |
| US7608679B2 (en) * | 2006-03-31 | 2009-10-27 | 3M Innovative Properties Company | Acene-thiophene copolymers |
| US7666968B2 (en) * | 2006-04-21 | 2010-02-23 | 3M Innovative Properties Company | Acene-thiophene copolymers with silethynly groups |
| US7495251B2 (en) * | 2006-04-21 | 2009-02-24 | 3M Innovative Properties Company | Electronic devices containing acene-thiophene copolymers with silylethynyl groups |
| TWI325744B (en) * | 2006-08-28 | 2010-06-01 | Ind Tech Res Inst | Electronic devices integrated on a single substrate and method for fabricating the same |
| US20080121877A1 (en) * | 2006-11-27 | 2008-05-29 | 3M Innovative Properties Company | Thin film transistor with enhanced stability |
| US7655127B2 (en) * | 2006-11-27 | 2010-02-02 | 3M Innovative Properties Company | Method of fabricating thin film transistor |
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| US20090321775A1 (en) * | 2008-06-26 | 2009-12-31 | Ghulam Hasnain | LED with Reduced Electrode Area |
| EP2338131A1 (en) * | 2008-09-15 | 2011-06-29 | Nxp B.V. | Method of manufacturing a plurality of ics and transponders |
| JP5724342B2 (ja) * | 2009-12-10 | 2015-05-27 | 大日本印刷株式会社 | パターン配置方法並びにシリコンウェハ及び半導体デバイスの製造方法 |
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| WO2012158709A1 (en) | 2011-05-16 | 2012-11-22 | The Board Of Trustees Of The University Of Illinois | Thermally managed led arrays assembled by printing |
| US11527774B2 (en) | 2011-06-29 | 2022-12-13 | Space Charge, LLC | Electrochemical energy storage devices |
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| US20140069331A1 (en) * | 2012-09-12 | 2014-03-13 | Shenzen China Star Optoelectronics Technology Co., Ltd. | Mask and manufacturing method thereof |
| CN104347789B (zh) * | 2013-08-05 | 2017-08-25 | 国家纳米科学中心 | 垂直型薄膜热电器件的热电臂阵列的制作方法和制作装置 |
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| CN105353589B (zh) * | 2015-12-01 | 2018-02-23 | 广州杰赛科技股份有限公司 | 一种高效pcb二次曝光方法 |
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| CN109860062A (zh) * | 2018-11-29 | 2019-06-07 | 华映科技（集团）股份有限公司 | 一种金属氧化物晶体管制作源极漏极的方法 |
| CN110993562B (zh) * | 2019-11-07 | 2023-09-29 | 复旦大学 | 一种基于全硅基掩膜版的薄膜器件的制备方法 |
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- 2002-02-14 US US10/076,003 patent/US20030151118A1/en not_active Abandoned
-
2003
- 2003-01-21 EP EP08021822A patent/EP2060654A1/en not_active Withdrawn
- 2003-01-21 WO PCT/US2003/001751 patent/WO2003069014A1/en not_active Ceased
- 2003-01-21 AU AU2003209312A patent/AU2003209312A1/en not_active Abandoned
- 2003-01-21 EP EP03707466A patent/EP1474542B1/en not_active Expired - Lifetime
- 2003-01-21 KR KR10-2004-7012543A patent/KR20040091037A/ko not_active Withdrawn
- 2003-01-21 JP JP2003568120A patent/JP2005518478A/ja active Pending
- 2003-01-21 CN CN038040069A patent/CN1633515B/zh not_active Expired - Fee Related
- 2003-01-21 AT AT03707466T patent/ATE431440T1/de not_active IP Right Cessation
- 2003-01-21 DE DE60327597T patent/DE60327597D1/de not_active Expired - Lifetime
-
2005
- 2005-10-25 US US11/258,330 patent/US20060057857A1/en not_active Abandoned
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100687761B1 (ko) * | 2006-03-06 | 2007-02-27 | 한국전자통신연구원 | 대량생산을 위한 분자 전자 소자 제조용 소자 홀더 및 이를이용한 분자 전자 소자의 제조 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| AU2003209312A1 (en) | 2003-09-04 |
| EP2060654A1 (en) | 2009-05-20 |
| CN1633515B (zh) | 2010-04-28 |
| CN1633515A (zh) | 2005-06-29 |
| US20060057857A1 (en) | 2006-03-16 |
| JP2005518478A (ja) | 2005-06-23 |
| EP1474542A1 (en) | 2004-11-10 |
| US20030151118A1 (en) | 2003-08-14 |
| EP1474542B1 (en) | 2009-05-13 |
| DE60327597D1 (de) | 2009-06-25 |
| ATE431440T1 (de) | 2009-05-15 |
| WO2003069014A1 (en) | 2003-08-21 |
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