CN1633515B - 制造电路用孔眼掩模 - Google Patents

制造电路用孔眼掩模 Download PDF

Info

Publication number
CN1633515B
CN1633515B CN038040069A CN03804006A CN1633515B CN 1633515 B CN1633515 B CN 1633515B CN 038040069 A CN038040069 A CN 038040069A CN 03804006 A CN03804006 A CN 03804006A CN 1633515 B CN1633515 B CN 1633515B
Authority
CN
China
Prior art keywords
aperture mask
mask
collimation
base material
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN038040069A
Other languages
English (en)
Chinese (zh)
Other versions
CN1633515A (zh
Inventor
P·F·宝德
P·R·弗莱明
M·A·哈斯
T·W·凯利
D·V·莫里斯
S·西斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of CN1633515A publication Critical patent/CN1633515A/zh
Application granted granted Critical
Publication of CN1633515B publication Critical patent/CN1633515B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Picture Signal Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electron Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
CN038040069A 2002-02-14 2003-01-21 制造电路用孔眼掩模 Expired - Fee Related CN1633515B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/076,003 2002-02-14
US10/076,003 US20030151118A1 (en) 2002-02-14 2002-02-14 Aperture masks for circuit fabrication
PCT/US2003/001751 WO2003069014A1 (en) 2002-02-14 2003-01-21 Aperture masks for circuit fabrication

Publications (2)

Publication Number Publication Date
CN1633515A CN1633515A (zh) 2005-06-29
CN1633515B true CN1633515B (zh) 2010-04-28

Family

ID=27660170

Family Applications (1)

Application Number Title Priority Date Filing Date
CN038040069A Expired - Fee Related CN1633515B (zh) 2002-02-14 2003-01-21 制造电路用孔眼掩模

Country Status (9)

Country Link
US (2) US20030151118A1 (enExample)
EP (2) EP2060654A1 (enExample)
JP (1) JP2005518478A (enExample)
KR (1) KR20040091037A (enExample)
CN (1) CN1633515B (enExample)
AT (1) ATE431440T1 (enExample)
AU (1) AU2003209312A1 (enExample)
DE (1) DE60327597D1 (enExample)
WO (1) WO2003069014A1 (enExample)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1328982B1 (en) 2000-03-24 2005-07-20 Cymbet Corporation Device enclosures and devices with integrated battery
US6897164B2 (en) * 2002-02-14 2005-05-24 3M Innovative Properties Company Aperture masks for circuit fabrication
US6821348B2 (en) * 2002-02-14 2004-11-23 3M Innovative Properties Company In-line deposition processes for circuit fabrication
US6667215B2 (en) 2002-05-02 2003-12-23 3M Innovative Properties Method of making transistors
US7088145B2 (en) * 2002-12-23 2006-08-08 3M Innovative Properties Company AC powered logic circuitry
US7294209B2 (en) 2003-01-02 2007-11-13 Cymbet Corporation Apparatus and method for depositing material onto a substrate using a roll-to-roll mask
US7603144B2 (en) 2003-01-02 2009-10-13 Cymbet Corporation Active wireless tagging system on peel and stick substrate
US6906436B2 (en) 2003-01-02 2005-06-14 Cymbet Corporation Solid state activity-activated battery device and method
US7279777B2 (en) * 2003-05-08 2007-10-09 3M Innovative Properties Company Organic polymers, laminates, and capacitors
US7098525B2 (en) * 2003-05-08 2006-08-29 3M Innovative Properties Company Organic polymers, electronic devices, and methods
JP2005042133A (ja) * 2003-07-22 2005-02-17 Seiko Epson Corp 蒸着マスク及びその製造方法、表示装置及びその製造方法、表示装置を備えた電子機器
US20070178710A1 (en) * 2003-08-18 2007-08-02 3M Innovative Properties Company Method for sealing thin film transistors
US20050079418A1 (en) * 2003-10-14 2005-04-14 3M Innovative Properties Company In-line deposition processes for thin film battery fabrication
US7211351B2 (en) 2003-10-16 2007-05-01 Cymbet Corporation Lithium/air batteries with LiPON as separator and protective barrier and method
US20050130422A1 (en) * 2003-12-12 2005-06-16 3M Innovative Properties Company Method for patterning films
US7078937B2 (en) * 2003-12-17 2006-07-18 3M Innovative Properties Company Logic circuitry powered by partially rectified ac waveform
US6882897B1 (en) * 2004-01-05 2005-04-19 Dennis S. Fernandez Reconfigurable garment definition and production method
US7494742B2 (en) 2004-01-06 2009-02-24 Cymbet Corporation Layered barrier structure having one or more definable layers and method
JP4124787B2 (ja) * 2004-01-15 2008-07-23 松下電器産業株式会社 電界効果トランジスタ及びそれを用いた表示装置
US7622367B1 (en) 2004-06-04 2009-11-24 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
TWI270741B (en) * 2004-07-28 2007-01-11 Remarkable Ltd Mask for decreasing the fabrication cost and method for design the same
US7399668B2 (en) * 2004-09-30 2008-07-15 3M Innovative Properties Company Method for making electronic devices having a dielectric layer surface treatment
US20060128165A1 (en) * 2004-12-13 2006-06-15 3M Innovative Properties Company Method for patterning surface modification
US7679686B2 (en) * 2004-12-30 2010-03-16 E. I. Du Pont De Nemours And Company Electronic device comprising a gamma correction unit, a process for using the electronic device, and a data processing system readable medium
US7151276B2 (en) * 2005-03-09 2006-12-19 3M Innovative Properties Company Semiconductors containing perfluoroether acyl oligothiophene compounds
US7211679B2 (en) * 2005-03-09 2007-05-01 3M Innovative Properties Company Perfluoroether acyl oligothiophene compounds
US7667929B2 (en) * 2005-04-04 2010-02-23 Hitachi Global Storage Technologies Netherlands B.V. Apparatus, method and system for fabricating a patterned media imprint master
JP5159053B2 (ja) * 2005-06-30 2013-03-06 株式会社半導体エネルギー研究所 半導体装置
US7776478B2 (en) 2005-07-15 2010-08-17 Cymbet Corporation Thin-film batteries with polymer and LiPON electrolyte layers and method
EP1911118B1 (en) 2005-07-15 2014-03-05 Cymbet Corporation Thin-film batteries with soft and hard electrolyte layers
US7319153B2 (en) * 2005-07-29 2008-01-15 3M Innovative Properties Company 6,13-Bis(thienyl)pentacene compounds
US7615501B2 (en) * 2005-08-11 2009-11-10 3M Innovative Properties Company Method for making a thin film layer
US20070137568A1 (en) * 2005-12-16 2007-06-21 Schreiber Brian E Reciprocating aperture mask system and method
US7763114B2 (en) * 2005-12-28 2010-07-27 3M Innovative Properties Company Rotatable aperture mask assembly and deposition system
KR100687761B1 (ko) * 2006-03-06 2007-02-27 한국전자통신연구원 대량생산을 위한 분자 전자 소자 제조용 소자 홀더 및 이를이용한 분자 전자 소자의 제조 방법
US7608679B2 (en) * 2006-03-31 2009-10-27 3M Innovative Properties Company Acene-thiophene copolymers
US7667230B2 (en) * 2006-03-31 2010-02-23 3M Innovative Properties Company Electronic devices containing acene-thiophene copolymers
US7495251B2 (en) * 2006-04-21 2009-02-24 3M Innovative Properties Company Electronic devices containing acene-thiophene copolymers with silylethynyl groups
US7666968B2 (en) * 2006-04-21 2010-02-23 3M Innovative Properties Company Acene-thiophene copolymers with silethynly groups
TWI325744B (en) * 2006-08-28 2010-06-01 Ind Tech Res Inst Electronic devices integrated on a single substrate and method for fabricating the same
US7655127B2 (en) * 2006-11-27 2010-02-02 3M Innovative Properties Company Method of fabricating thin film transistor
US20080121877A1 (en) * 2006-11-27 2008-05-29 3M Innovative Properties Company Thin film transistor with enhanced stability
US20090001356A1 (en) * 2007-06-29 2009-01-01 3M Innovative Properties Company Electronic devices having a solution deposited gate dielectric
US7879688B2 (en) * 2007-06-29 2011-02-01 3M Innovative Properties Company Methods for making electronic devices with a solution deposited gate dielectric
WO2009034915A1 (ja) * 2007-09-10 2009-03-19 Ulvac, Inc. 蒸着装置
US8339040B2 (en) 2007-12-18 2012-12-25 Lumimove, Inc. Flexible electroluminescent devices and systems
US20090321775A1 (en) * 2008-06-26 2009-12-31 Ghulam Hasnain LED with Reduced Electrode Area
EP2338131A1 (en) * 2008-09-15 2011-06-29 Nxp B.V. Method of manufacturing a plurality of ics and transponders
JP5724342B2 (ja) * 2009-12-10 2015-05-27 大日本印刷株式会社 パターン配置方法並びにシリコンウェハ及び半導体デバイスの製造方法
KR101693578B1 (ko) * 2011-03-24 2017-01-10 삼성디스플레이 주식회사 증착 마스크
WO2012158709A1 (en) 2011-05-16 2012-11-22 The Board Of Trustees Of The University Of Illinois Thermally managed led arrays assembled by printing
US11527774B2 (en) 2011-06-29 2022-12-13 Space Charge, LLC Electrochemical energy storage devices
US10601074B2 (en) 2011-06-29 2020-03-24 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
US11996517B2 (en) 2011-06-29 2024-05-28 Space Charge, LLC Electrochemical energy storage devices
US9853325B2 (en) 2011-06-29 2017-12-26 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
US10658705B2 (en) 2018-03-07 2020-05-19 Space Charge, LLC Thin-film solid-state energy storage devices
TWI480398B (zh) * 2012-01-30 2015-04-11 Innocom Tech Shenzhen Co Ltd 陰影罩幕及其補償設計方法
CN103225059A (zh) * 2012-01-30 2013-07-31 群康科技(深圳)有限公司 阴影掩膜及其补偿设计方法
US20140069331A1 (en) * 2012-09-12 2014-03-13 Shenzen China Star Optoelectronics Technology Co., Ltd. Mask and manufacturing method thereof
CN104347789B (zh) * 2013-08-05 2017-08-25 国家纳米科学中心 垂直型薄膜热电器件的热电臂阵列的制作方法和制作装置
JP6529329B2 (ja) * 2015-05-01 2019-06-12 株式会社ブイ・テクノロジー タッチパネル製造方法、タッチパネルのガラス基板及びタッチパネル製造用マスク
KR20180061217A (ko) 2015-09-28 2018-06-07 쓰리엠 이노베이티브 프로퍼티즈 캄파니 절단가능한 가교결합제를 포함하는 패턴화된 필름 물품 및 방법
CN105353589B (zh) * 2015-12-01 2018-02-23 广州杰赛科技股份有限公司 一种高效pcb二次曝光方法
CN106435473A (zh) * 2016-11-11 2017-02-22 京东方科技集团股份有限公司 掩模板及其制作方法、有机发光二极管显示器的制作方法
CN109860062A (zh) * 2018-11-29 2019-06-07 华映科技（集团）股份有限公司 一种金属氧化物晶体管制作源极漏极的方法
CN110993562B (zh) * 2019-11-07 2023-09-29 复旦大学 一种基于全硅基掩膜版的薄膜器件的制备方法
JP7749925B2 (ja) * 2020-03-13 2025-10-07 大日本印刷株式会社 有機デバイスの製造装置の蒸着室の評価方法
JP2022175925A (ja) * 2021-05-14 2022-11-25 キヤノン株式会社 蒸着マスク、及び、有機電子デバイスの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5154797A (en) * 1991-08-14 1992-10-13 The United States Of America As Represented By The Secretary Of The Army Silicon shadow mask
EP1036858A1 (en) * 1999-03-13 2000-09-20 Applied Materials, Inc. Method and apparatus for fabricating a wafer spacing mask on a substrate support chuck

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US23090A (en) * 1859-03-01 Improvement in harvesters
US111035A (en) * 1871-01-17 Improvement in feed-cutters
US3669060A (en) * 1970-09-24 1972-06-13 Westinghouse Electric Corp Mask changing mechanism for use in the evaporation of thin film devices
US3995283A (en) * 1976-01-05 1976-11-30 Zenith Radio Corporation Screening lighthouse for color cathode ray tubes
US4096821A (en) * 1976-12-13 1978-06-27 Westinghouse Electric Corp. System for fabricating thin-film electronic components
US4677738A (en) * 1980-05-19 1987-07-07 Energy Conversion Devices, Inc. Method of making a photovoltaic panel
US4335161A (en) * 1980-11-03 1982-06-15 Xerox Corporation Thin film transistors, thin film transistor arrays, and a process for preparing the same
JPS60119784A (ja) * 1983-12-01 1985-06-27 Kanegafuchi Chem Ind Co Ltd 絶縁金属基板の製法およびそれに用いる装置
US4676193A (en) * 1984-02-27 1987-06-30 Applied Magnetics Corporation Stabilized mask assembly for direct deposition of a thin film pattern onto a substrate
US4883359A (en) * 1984-02-28 1989-11-28 Canon Kabushiki Kaisha Alignment method and pattern forming method using the same
DE3604368A1 (de) * 1985-02-13 1986-08-14 Sharp K.K., Osaka Verfahren zur herstellung eines duennfilm-transistors
US4963921A (en) * 1985-06-24 1990-10-16 Canon Kabushiki Kaisha Device for holding a mask
US4746548A (en) * 1985-10-23 1988-05-24 Gte Products Corporation Method for registration of shadow masked thin-film patterns
US4915057A (en) * 1985-10-23 1990-04-10 Gte Products Corporation Apparatus and method for registration of shadow masked thin-film patterns
US4890228A (en) * 1988-01-21 1989-12-26 Beneficial Management Corporation Of America Electronic income tax refund early payment system
JPH04155623A (ja) * 1990-10-19 1992-05-28 Fuji Photo Film Co Ltd 磁気記録媒体の製造方法及び装置
JP3402681B2 (ja) * 1993-06-02 2003-05-06 サンエー技研株式会社 露光における位置合わせ方法
US5397607A (en) * 1994-05-17 1995-03-14 International Business Machines Corporation Input/output (I/O) thin film repair process
US5626784A (en) * 1995-03-31 1997-05-06 Motorola, Inc. In-situ sizing of photolithographic mask or the like, and frame therefore
JP4180654B2 (ja) * 1995-04-26 2008-11-12 スリーエム カンパニー ステップアンドリピート露光の方法および装置
US5648188A (en) * 1995-06-07 1997-07-15 International Business Machines Corporation Real time alignment system for a projection electron beam lithographic system
US5710619A (en) * 1995-10-31 1998-01-20 Anvik Corporation Large-area, scan-and-repeat, projection patterning system with unitary stage and magnification control capability
US6106627A (en) * 1996-04-04 2000-08-22 Sigma Laboratories Of Arizona, Inc. Apparatus for producing metal coated polymers
JP2833605B2 (ja) * 1997-02-07 1998-12-09 日本電気株式会社 発光ディスプレイの製造方法
JP3999837B2 (ja) * 1997-02-10 2007-10-31 Ｔｄｋ株式会社 有機エレクトロルミネッセンス表示装置
US6255776B1 (en) * 1997-05-01 2001-07-03 Phillips Plastics Corporation Display device and method therefor
JPH10319870A (ja) * 1997-05-15 1998-12-04 Nec Corp シャドウマスク及びこれを用いたカラー薄膜ｅｌ表示装置の製造方法
US6071597A (en) * 1997-08-28 2000-06-06 3M Innovative Properties Company Flexible circuits and carriers and process for manufacture
US6087196A (en) * 1998-01-30 2000-07-11 The Trustees Of Princeton University Fabrication of organic semiconductor devices using ink jet printing
KR100451381B1 (ko) * 1998-07-30 2005-06-01 엘지.필립스 엘시디 주식회사 박막트랜지스터및그제조방법
WO2001008242A1 (en) * 1999-07-21 2001-02-01 E Ink Corporation Preferred methods for producing electrical circuit elements used to control an electronic display
JP3870014B2 (ja) * 1999-07-26 2007-01-17 キヤノン株式会社 真空処理装置および真空処理方法
DE19957542C2 (de) * 1999-11-30 2002-01-10 Infineon Technologies Ag Alternierende Phasenmaske
TW504605B (en) * 1999-12-03 2002-10-01 Asm Lithography Bv Lithographic projection apparatus, method of manufacturing a device using the same, the device and mask
EP1267360A4 (en) * 2000-02-21 2003-04-02 Toyo Ink Mfg Co ACTIVE ENERGY BEAM POLYMERIZATION CONDUCTIVE PASTE, PRODUCTION METHOD AND DEVICE FOR CONDUCTIVE CIRCUIT SUBSTRATE AND NON-CONTACT ID ANTENNA, AND ASSOCIATED PRODUCTION METHOD
US20020110733A1 (en) * 2000-08-07 2002-08-15 Johnson Lonnie G. Systems and methods for producing multilayer thin film energy storage devices
KR100382491B1 (ko) * 2000-11-28 2003-05-09 엘지전자 주식회사 유기 ｅｌ의 새도우 마스크
JP4092914B2 (ja) * 2001-01-26 2008-05-28 セイコーエプソン株式会社 マスクの製造方法、有機エレクトロルミネッセンス装置の製造方法
US6455931B1 (en) * 2001-05-15 2002-09-24 Raytheon Company Monolithic microelectronic array structure having substrate islands and its fabrication
US6884734B2 (en) * 2001-11-20 2005-04-26 International Business Machines Corporation Vapor phase etch trim structure with top etch blocking layer
US6897164B2 (en) * 2002-02-14 2005-05-24 3M Innovative Properties Company Aperture masks for circuit fabrication
US6667215B2 (en) * 2002-05-02 2003-12-23 3M Innovative Properties Method of making transistors
US20040087009A1 (en) * 2002-10-31 2004-05-06 Schembri Carol T. Array substrates having protective layer
US7294209B2 (en) * 2003-01-02 2007-11-13 Cymbet Corporation Apparatus and method for depositing material onto a substrate using a roll-to-roll mask
JP4280509B2 (ja) * 2003-01-31 2009-06-17 キヤノン株式会社 投影露光用マスク、投影露光用マスクの製造方法、投影露光装置および投影露光方法
US7153180B2 (en) * 2003-11-13 2006-12-26 Eastman Kodak Company Continuous manufacture of flat panel light emitting devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5154797A (en) * 1991-08-14 1992-10-13 The United States Of America As Represented By The Secretary Of The Army Silicon shadow mask
EP1036858A1 (en) * 1999-03-13 2000-09-20 Applied Materials, Inc. Method and apparatus for fabricating a wafer spacing mask on a substrate support chuck

Also Published As

Publication number Publication date
EP1474542A1 (en) 2004-11-10
KR20040091037A (ko) 2004-10-27
ATE431440T1 (de) 2009-05-15
CN1633515A (zh) 2005-06-29
AU2003209312A1 (en) 2003-09-04
EP2060654A1 (en) 2009-05-20
US20030151118A1 (en) 2003-08-14
US20060057857A1 (en) 2006-03-16
EP1474542B1 (en) 2009-05-13
WO2003069014A1 (en) 2003-08-21
JP2005518478A (ja) 2005-06-23
DE60327597D1 (de) 2009-06-25

Similar Documents

Publication Publication Date Title
CN1633515B (zh) 制造电路用孔眼掩模
US10626492B2 (en) Mask assembly for thin film deposition and method of manufacturing the same
US9997708B2 (en) Mask frame assembly, apparatus and method for manufacturing a display apparatus
KR101135544B1 (ko) 마스크 조립체, 이의 제조 방법 및 이를 이용한 평판표시장치용 증착 장치
US12262609B2 (en) Display substrate, manufacturing method and display device
US9470973B2 (en) Designing and manufacturing methods of TFT LCD array positioning mark
US20210375700A1 (en) Method for detecting resistance of side trace of display substrate and display substrate
KR20050067084A (ko) 박막 형성 방법, 박막 형성 장치, 유기 전계 발광 장치의제조 방법, 유기 전계 발광 장치, 및 전자기기
US10236279B2 (en) Emissive display with light management system
KR20050053334A (ko) 마스크, 마스크의 제조 방법, 유기 ｅｌ 장치의 제조 방법및 유기 ｅｌ 장치
CN108663852A (zh) 显示面板和显示装置
CN113286916A (zh) 微型精密掩膜板及其制作方法和amoled显示器件
KR20130046913A (ko) 유기 전계 발광소자 및 그 제조방법
US7423343B2 (en) Wiring board, manufacturing method thereof, semiconductor device and manufacturing method thereof
US12089480B2 (en) Display panel including redundant driving circuits that form alignment marks in a peripheral region thereof, method for manufacturing the same, display device and method for manufacturing the same
US11380719B2 (en) Display substrate, method for manufacturing the same, and display device
CN101609855A (zh) 光敏电容、光感测电路、基板及其制造工艺和显示装置
CN109712931A (zh) 一种薄膜晶体管及其制作方法、显示面板
US9515101B2 (en) Array substrate and method for manufacturing the same, and display device
US20250207911A1 (en) Deposition apparatus, mask for deposition apparatus, and method of measuring gap between mask for deposition apparatus and substrate
CN115119524A (zh) 显示基板及其制备方法、显示装置
CN206573815U (zh) 一种对位标记、显示基板及显示装置
CN115101537B (zh) 一种阵列基板以及显示面板
CN221125877U (zh) 台单元和包括台单元的沉积设备
CN104810312A (zh) 栅极层上的对位标记的制作方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100428

Termination date: 20110121