ATE431440T1 - Verfahren für die herstellung von schaltkreisen unter verwendung einer lochmaske - Google Patents

Verfahren für die herstellung von schaltkreisen unter verwendung einer lochmaske

Info

Publication number
ATE431440T1
ATE431440T1 AT03707466T AT03707466T ATE431440T1 AT E431440 T1 ATE431440 T1 AT E431440T1 AT 03707466 T AT03707466 T AT 03707466T AT 03707466 T AT03707466 T AT 03707466T AT E431440 T1 ATE431440 T1 AT E431440T1
Authority
AT
Austria
Prior art keywords
circuits
techniques
aperture
circuit elements
creating
Prior art date
Application number
AT03707466T
Other languages
English (en)
Inventor
Paul Baude
Patrick Fleming
Michael Haase
Tommie Kelley
Dawn Muyres
Steven Theiss
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Application granted granted Critical
Publication of ATE431440T1 publication Critical patent/ATE431440T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Picture Signal Circuits (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Electron Beam Exposure (AREA)
AT03707466T 2002-02-14 2003-01-21 Verfahren für die herstellung von schaltkreisen unter verwendung einer lochmaske ATE431440T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/076,003 US20030151118A1 (en) 2002-02-14 2002-02-14 Aperture masks for circuit fabrication
PCT/US2003/001751 WO2003069014A1 (en) 2002-02-14 2003-01-21 Aperture masks for circuit fabrication

Publications (1)

Publication Number Publication Date
ATE431440T1 true ATE431440T1 (de) 2009-05-15

Family

ID=27660170

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03707466T ATE431440T1 (de) 2002-02-14 2003-01-21 Verfahren für die herstellung von schaltkreisen unter verwendung einer lochmaske

Country Status (9)

Country Link
US (2) US20030151118A1 (de)
EP (2) EP2060654A1 (de)
JP (1) JP2005518478A (de)
KR (1) KR20040091037A (de)
CN (1) CN1633515B (de)
AT (1) ATE431440T1 (de)
AU (1) AU2003209312A1 (de)
DE (1) DE60327597D1 (de)
WO (1) WO2003069014A1 (de)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2001250958A1 (en) 2000-03-24 2001-10-08 Cymbet Corporation Continuous processing of thin-film batteries and like devices
US6821348B2 (en) * 2002-02-14 2004-11-23 3M Innovative Properties Company In-line deposition processes for circuit fabrication
US6897164B2 (en) * 2002-02-14 2005-05-24 3M Innovative Properties Company Aperture masks for circuit fabrication
US6667215B2 (en) 2002-05-02 2003-12-23 3M Innovative Properties Method of making transistors
US7088145B2 (en) * 2002-12-23 2006-08-08 3M Innovative Properties Company AC powered logic circuitry
US7098525B2 (en) * 2003-05-08 2006-08-29 3M Innovative Properties Company Organic polymers, electronic devices, and methods
US7279777B2 (en) * 2003-05-08 2007-10-09 3M Innovative Properties Company Organic polymers, laminates, and capacitors
JP2005042133A (ja) * 2003-07-22 2005-02-17 Seiko Epson Corp 蒸着マスク及びその製造方法、表示装置及びその製造方法、表示装置を備えた電子機器
US20070178710A1 (en) * 2003-08-18 2007-08-02 3M Innovative Properties Company Method for sealing thin film transistors
US20050079418A1 (en) * 2003-10-14 2005-04-14 3M Innovative Properties Company In-line deposition processes for thin film battery fabrication
US20050130422A1 (en) * 2003-12-12 2005-06-16 3M Innovative Properties Company Method for patterning films
US7078937B2 (en) 2003-12-17 2006-07-18 3M Innovative Properties Company Logic circuitry powered by partially rectified ac waveform
US6882897B1 (en) * 2004-01-05 2005-04-19 Dennis S. Fernandez Reconfigurable garment definition and production method
WO2005069383A1 (ja) * 2004-01-15 2005-07-28 Matsushita Electric Industrial Co., Ltd. 電界効果トランジスタ及びそれを用いた表示装置
KR101368748B1 (ko) * 2004-06-04 2014-03-05 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 인쇄가능한 반도체소자들의 제조 및 조립방법과 장치
TWI270741B (en) * 2004-07-28 2007-01-11 Remarkable Ltd Mask for decreasing the fabrication cost and method for design the same
US7399668B2 (en) * 2004-09-30 2008-07-15 3M Innovative Properties Company Method for making electronic devices having a dielectric layer surface treatment
US20060128165A1 (en) * 2004-12-13 2006-06-15 3M Innovative Properties Company Method for patterning surface modification
US7679686B2 (en) * 2004-12-30 2010-03-16 E. I. Du Pont De Nemours And Company Electronic device comprising a gamma correction unit, a process for using the electronic device, and a data processing system readable medium
US7151276B2 (en) * 2005-03-09 2006-12-19 3M Innovative Properties Company Semiconductors containing perfluoroether acyl oligothiophene compounds
US7211679B2 (en) * 2005-03-09 2007-05-01 3M Innovative Properties Company Perfluoroether acyl oligothiophene compounds
US7667929B2 (en) * 2005-04-04 2010-02-23 Hitachi Global Storage Technologies Netherlands B.V. Apparatus, method and system for fabricating a patterned media imprint master
JP5159053B2 (ja) * 2005-06-30 2013-03-06 株式会社半導体エネルギー研究所 半導体装置
WO2007011900A1 (en) 2005-07-15 2007-01-25 Cymbet Corporation Thin-film batteries with soft and hard electrolyte layers and method
US7776478B2 (en) 2005-07-15 2010-08-17 Cymbet Corporation Thin-film batteries with polymer and LiPON electrolyte layers and method
US7319153B2 (en) * 2005-07-29 2008-01-15 3M Innovative Properties Company 6,13-Bis(thienyl)pentacene compounds
US7615501B2 (en) * 2005-08-11 2009-11-10 3M Innovative Properties Company Method for making a thin film layer
US20070137568A1 (en) * 2005-12-16 2007-06-21 Schreiber Brian E Reciprocating aperture mask system and method
US7763114B2 (en) * 2005-12-28 2010-07-27 3M Innovative Properties Company Rotatable aperture mask assembly and deposition system
KR100687761B1 (ko) * 2006-03-06 2007-02-27 한국전자통신연구원 대량생산을 위한 분자 전자 소자 제조용 소자 홀더 및 이를이용한 분자 전자 소자의 제조 방법
US7667230B2 (en) * 2006-03-31 2010-02-23 3M Innovative Properties Company Electronic devices containing acene-thiophene copolymers
US7608679B2 (en) * 2006-03-31 2009-10-27 3M Innovative Properties Company Acene-thiophene copolymers
US7666968B2 (en) * 2006-04-21 2010-02-23 3M Innovative Properties Company Acene-thiophene copolymers with silethynly groups
US7495251B2 (en) * 2006-04-21 2009-02-24 3M Innovative Properties Company Electronic devices containing acene-thiophene copolymers with silylethynyl groups
TWI325744B (en) * 2006-08-28 2010-06-01 Ind Tech Res Inst Electronic devices integrated on a single substrate and method for fabricating the same
US20080121877A1 (en) * 2006-11-27 2008-05-29 3M Innovative Properties Company Thin film transistor with enhanced stability
US7655127B2 (en) * 2006-11-27 2010-02-02 3M Innovative Properties Company Method of fabricating thin film transistor
US20090001356A1 (en) * 2007-06-29 2009-01-01 3M Innovative Properties Company Electronic devices having a solution deposited gate dielectric
US7879688B2 (en) * 2007-06-29 2011-02-01 3M Innovative Properties Company Methods for making electronic devices with a solution deposited gate dielectric
KR101167546B1 (ko) * 2007-09-10 2012-07-20 가부시키가이샤 알박 증착 장치
WO2009079004A1 (en) 2007-12-18 2009-06-25 Lumimove, Inc., Dba Crosslink Flexible electroluminescent devices and systems
US20090321775A1 (en) * 2008-06-26 2009-12-31 Ghulam Hasnain LED with Reduced Electrode Area
EP2338131A1 (de) * 2008-09-15 2011-06-29 Nxp B.V. Verfahren zur herstellung mehrerer ics und transponder
JP5724342B2 (ja) * 2009-12-10 2015-05-27 大日本印刷株式会社 パターン配置方法並びにシリコンウェハ及び半導体デバイスの製造方法
KR101693578B1 (ko) * 2011-03-24 2017-01-10 삼성디스플레이 주식회사 증착 마스크
WO2012158709A1 (en) 2011-05-16 2012-11-22 The Board Of Trustees Of The University Of Illinois Thermally managed led arrays assembled by printing
US10658705B2 (en) 2018-03-07 2020-05-19 Space Charge, LLC Thin-film solid-state energy storage devices
US11527774B2 (en) 2011-06-29 2022-12-13 Space Charge, LLC Electrochemical energy storage devices
US9853325B2 (en) 2011-06-29 2017-12-26 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
US11996517B2 (en) 2011-06-29 2024-05-28 Space Charge, LLC Electrochemical energy storage devices
US10601074B2 (en) 2011-06-29 2020-03-24 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
CN103225059A (zh) * 2012-01-30 2013-07-31 群康科技(深圳)有限公司 阴影掩膜及其补偿设计方法
TWI480398B (zh) * 2012-01-30 2015-04-11 Innocom Tech Shenzhen Co Ltd 陰影罩幕及其補償設計方法
US20140069331A1 (en) * 2012-09-12 2014-03-13 Shenzen China Star Optoelectronics Technology Co., Ltd. Mask and manufacturing method thereof
CN104347789B (zh) * 2013-08-05 2017-08-25 国家纳米科学中心 垂直型薄膜热电器件的热电臂阵列的制作方法和制作装置
JP6529329B2 (ja) * 2015-05-01 2019-06-12 株式会社ブイ・テクノロジー タッチパネル製造方法、タッチパネルのガラス基板及びタッチパネル製造用マスク
JP6983766B2 (ja) 2015-09-28 2021-12-17 スリーエム イノベイティブ プロパティズ カンパニー 開裂可能な架橋剤を含むパターン化されたフィルム物品及び方法
CN105353589B (zh) * 2015-12-01 2018-02-23 广州杰赛科技股份有限公司 一种高效pcb二次曝光方法
CN106435473A (zh) * 2016-11-11 2017-02-22 京东方科技集团股份有限公司 掩模板及其制作方法、有机发光二极管显示器的制作方法
CN109860062A (zh) * 2018-11-29 2019-06-07 华映科技（集团）股份有限公司 一种金属氧化物晶体管制作源极漏极的方法
CN110993562B (zh) * 2019-11-07 2023-09-29 复旦大学 一种基于全硅基掩膜版的薄膜器件的制备方法
JP2021175824A (ja) * 2020-03-13 2021-11-04 大日本印刷株式会社 有機デバイスの製造装置の蒸着室の評価方法、評価方法で用いられる標準マスク装置及び標準基板、標準マスク装置の製造方法、評価方法で評価された蒸着室を備える有機デバイスの製造装置、評価方法で評価された蒸着室において形成された蒸着層を備える有機デバイス、並びに有機デバイスの製造装置の蒸着室のメンテナンス方法

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US23090A (en) * 1859-03-01 Improvement in harvesters
US111035A (en) * 1871-01-17 Improvement in feed-cutters
US3669060A (en) * 1970-09-24 1972-06-13 Westinghouse Electric Corp Mask changing mechanism for use in the evaporation of thin film devices
US3995283A (en) * 1976-01-05 1976-11-30 Zenith Radio Corporation Screening lighthouse for color cathode ray tubes
US4096821A (en) * 1976-12-13 1978-06-27 Westinghouse Electric Corp. System for fabricating thin-film electronic components
US4677738A (en) * 1980-05-19 1987-07-07 Energy Conversion Devices, Inc. Method of making a photovoltaic panel
US4335161A (en) * 1980-11-03 1982-06-15 Xerox Corporation Thin film transistors, thin film transistor arrays, and a process for preparing the same
JPS60119784A (ja) * 1983-12-01 1985-06-27 Kanegafuchi Chem Ind Co Ltd 絶縁金属基板の製法およびそれに用いる装置
US4676193A (en) * 1984-02-27 1987-06-30 Applied Magnetics Corporation Stabilized mask assembly for direct deposition of a thin film pattern onto a substrate
US4883359A (en) * 1984-02-28 1989-11-28 Canon Kabushiki Kaisha Alignment method and pattern forming method using the same
DE3604368A1 (de) * 1985-02-13 1986-08-14 Sharp K.K., Osaka Verfahren zur herstellung eines duennfilm-transistors
US4963921A (en) * 1985-06-24 1990-10-16 Canon Kabushiki Kaisha Device for holding a mask
US4746548A (en) * 1985-10-23 1988-05-24 Gte Products Corporation Method for registration of shadow masked thin-film patterns
US4915057A (en) * 1985-10-23 1990-04-10 Gte Products Corporation Apparatus and method for registration of shadow masked thin-film patterns
US4890228A (en) * 1988-01-21 1989-12-26 Beneficial Management Corporation Of America Electronic income tax refund early payment system
JPH04155623A (ja) * 1990-10-19 1992-05-28 Fuji Photo Film Co Ltd 磁気記録媒体の製造方法及び装置
US5154797A (en) * 1991-08-14 1992-10-13 The United States Of America As Represented By The Secretary Of The Army Silicon shadow mask
JP3402681B2 (ja) * 1993-06-02 2003-05-06 サンエー技研株式会社 露光における位置合わせ方法
US5397607A (en) * 1994-05-17 1995-03-14 International Business Machines Corporation Input/output (I/O) thin film repair process
US5626784A (en) * 1995-03-31 1997-05-06 Motorola, Inc. In-situ sizing of photolithographic mask or the like, and frame therefore
JP4180654B2 (ja) * 1995-04-26 2008-11-12 スリーエム カンパニー ステップアンドリピート露光の方法および装置
US5648188A (en) * 1995-06-07 1997-07-15 International Business Machines Corporation Real time alignment system for a projection electron beam lithographic system
US5710619A (en) * 1995-10-31 1998-01-20 Anvik Corporation Large-area, scan-and-repeat, projection patterning system with unitary stage and magnification control capability
US6106627A (en) * 1996-04-04 2000-08-22 Sigma Laboratories Of Arizona, Inc. Apparatus for producing metal coated polymers
JP2833605B2 (ja) * 1997-02-07 1998-12-09 日本電気株式会社 発光ディスプレイの製造方法
JP3999837B2 (ja) * 1997-02-10 2007-10-31 Ｔｄｋ株式会社 有機エレクトロルミネッセンス表示装置
US6255776B1 (en) * 1997-05-01 2001-07-03 Phillips Plastics Corporation Display device and method therefor
JPH10319870A (ja) * 1997-05-15 1998-12-04 Nec Corp シャドウマスク及びこれを用いたカラー薄膜ｅｌ表示装置の製造方法
US6071597A (en) * 1997-08-28 2000-06-06 3M Innovative Properties Company Flexible circuits and carriers and process for manufacture
US6087196A (en) * 1998-01-30 2000-07-11 The Trustees Of Princeton University Fabrication of organic semiconductor devices using ink jet printing
KR100451381B1 (ko) * 1998-07-30 2005-06-01 엘지.필립스 엘시디 주식회사 박막트랜지스터및그제조방법
US6258227B1 (en) * 1999-03-13 2001-07-10 Applied Materials, Inc. Method and apparatus for fabricating a wafer spacing mask on a substrate support chuck
JP4948726B2 (ja) * 1999-07-21 2012-06-06 イー インク コーポレイション 電子ディスプレイを制御するための電子回路素子を作製する好適な方法
JP3870014B2 (ja) * 1999-07-26 2007-01-17 キヤノン株式会社 真空処理装置および真空処理方法
DE19957542C2 (de) * 1999-11-30 2002-01-10 Infineon Technologies Ag Alternierende Phasenmaske
TW504605B (en) * 1999-12-03 2002-10-01 Asm Lithography Bv Lithographic projection apparatus, method of manufacturing a device using the same, the device and mask
CN1211807C (zh) * 2000-02-21 2005-07-20 东洋油墨制造株式会社 活化高能射线束硬化型导电糊、导体电路基片的制造方法及装置以及非接触式id及其制造方法
US20020110733A1 (en) * 2000-08-07 2002-08-15 Johnson Lonnie G. Systems and methods for producing multilayer thin film energy storage devices
KR100382491B1 (ko) * 2000-11-28 2003-05-09 엘지전자 주식회사 유기 ｅｌ의 새도우 마스크
JP4092914B2 (ja) * 2001-01-26 2008-05-28 セイコーエプソン株式会社 マスクの製造方法、有機エレクトロルミネッセンス装置の製造方法
US6455931B1 (en) * 2001-05-15 2002-09-24 Raytheon Company Monolithic microelectronic array structure having substrate islands and its fabrication
US6884734B2 (en) * 2001-11-20 2005-04-26 International Business Machines Corporation Vapor phase etch trim structure with top etch blocking layer
US6897164B2 (en) * 2002-02-14 2005-05-24 3M Innovative Properties Company Aperture masks for circuit fabrication
US6667215B2 (en) * 2002-05-02 2003-12-23 3M Innovative Properties Method of making transistors
US20040087009A1 (en) * 2002-10-31 2004-05-06 Schembri Carol T. Array substrates having protective layer
US7294209B2 (en) * 2003-01-02 2007-11-13 Cymbet Corporation Apparatus and method for depositing material onto a substrate using a roll-to-roll mask
JP4280509B2 (ja) * 2003-01-31 2009-06-17 キヤノン株式会社 投影露光用マスク、投影露光用マスクの製造方法、投影露光装置および投影露光方法
US7153180B2 (en) * 2003-11-13 2006-12-26 Eastman Kodak Company Continuous manufacture of flat panel light emitting devices

Also Published As

Publication number Publication date
EP1474542A1 (de) 2004-11-10
JP2005518478A (ja) 2005-06-23
EP1474542B1 (de) 2009-05-13
KR20040091037A (ko) 2004-10-27
EP2060654A1 (de) 2009-05-20
CN1633515A (zh) 2005-06-29
DE60327597D1 (de) 2009-06-25
CN1633515B (zh) 2010-04-28
AU2003209312A1 (en) 2003-09-04
US20060057857A1 (en) 2006-03-16
WO2003069014A1 (en) 2003-08-21
US20030151118A1 (en) 2003-08-14

Similar Documents

Publication Publication Date Title
ATE431440T1 (de) Verfahren für die herstellung von schaltkreisen unter verwendung einer lochmaske
WO2003069015A3 (en) Aperture masks for circuit fabrication
TW200632542A (en) Mask, mask forming method, pattern forming method, and wiring pattern forming method
TW200705564A (en) Method for manufacturing a narrow structure on an integrated circuit
ATE459986T1 (de) Verfahren für die herstellung eigekapselten organischen elektronischen vorrichtungen
DE60105498D1 (de) Laserverarbeitungsverfahren für ein Glassubstrat und Verfahren zur Herstellung einer Hochfrequenzschaltung
ATE323327T1 (de) Herstellungsmethode für eine elekttronische anordnung mit organischen schichten
TW200715384A (en) Methods for manufacturing RFID tags and structures formed therefrom
DE60300619D1 (de) Verfahren zum einbetten einer komponente in eine basis und zur bildung eines kontakts
TW200740336A (en) Method of manufacturing flexible wiring substrate and method of manufacturing electronic component mounting structure
DE60314610D1 (de) Verfahren zur herstellung von organischen optoelektronischen und elektronischen bauteilen sowie dadurch erhaltene bauteile
TW200520056A (en) Pattern formation method, electronic circuit manufactured by the same, and electronic apparatus using the same
TW200727752A (en) Method of forming metal plate pattern and circuit board
TW200702899A (en) Method for manufacturing gray scale mask and gray scale mask
ATE431699T1 (de) Leiterplatte und verfahren zur herstellung einer leiterplatte
TW200717763A (en) Tape carrier for TAB and method of manufacturing the same
TW200616040A (en) Method for making a semiconductor device
ATE481690T1 (de) Rfid-kennzeichnung und verfahren zur herstellung einer rfid-kennzeichnung
TW200708886A (en) Method of forming high etch resistant resist patterns
TW200721255A (en) Pattern forming method
TW200735175A (en) Integrated circuit fabrication
TWI256094B (en) Film carrier tape for mounting electronic devices thereon and method of manufacturing the same
WO2002101465A3 (en) Phase conflict resolution for photolithographic masks
DE60203322D1 (de) Verfahren zur herstellung eines halbleiterbauelements
TW200731436A (en) Manufacturing method of wiring board and manufacturing method of semiconductor device

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties