DE60327597D1 - Verfahren FÜR DIE HERSTELLUNG VON SCHALTKREISEN unter Verwendung einer Lochmaske - Google Patents

Verfahren FÜR DIE HERSTELLUNG VON SCHALTKREISEN unter Verwendung einer Lochmaske

Info

Publication number
DE60327597D1
DE60327597D1 DE60327597T DE60327597T DE60327597D1 DE 60327597 D1 DE60327597 D1 DE 60327597D1 DE 60327597 T DE60327597 T DE 60327597T DE 60327597 T DE60327597 T DE 60327597T DE 60327597 D1 DE60327597 D1 DE 60327597D1
Authority
DE
Germany
Prior art keywords
circuits
techniques
aperture
circuit elements
creating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60327597T
Other languages
English (en)
Inventor
Paul F Baude
Patrick R Fleming
Michael A Haase
Tommie W Kelley
Dawn V Muyres
Steven Theiss
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Application granted granted Critical
Publication of DE60327597D1 publication Critical patent/DE60327597D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Picture Signal Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Electron Beam Exposure (AREA)
DE60327597T 2002-02-14 2003-01-21 Verfahren FÜR DIE HERSTELLUNG VON SCHALTKREISEN unter Verwendung einer Lochmaske Expired - Lifetime DE60327597D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/076,003 US20030151118A1 (en) 2002-02-14 2002-02-14 Aperture masks for circuit fabrication
PCT/US2003/001751 WO2003069014A1 (en) 2002-02-14 2003-01-21 Aperture masks for circuit fabrication

Publications (1)

Publication Number Publication Date
DE60327597D1 true DE60327597D1 (de) 2009-06-25

Family

ID=27660170

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60327597T Expired - Lifetime DE60327597D1 (de) 2002-02-14 2003-01-21 Verfahren FÜR DIE HERSTELLUNG VON SCHALTKREISEN unter Verwendung einer Lochmaske

Country Status (9)

Country Link
US (2) US20030151118A1 (de)
EP (2) EP2060654A1 (de)
JP (1) JP2005518478A (de)
KR (1) KR20040091037A (de)
CN (1) CN1633515B (de)
AT (1) ATE431440T1 (de)
AU (1) AU2003209312A1 (de)
DE (1) DE60327597D1 (de)
WO (1) WO2003069014A1 (de)

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US7098525B2 (en) * 2003-05-08 2006-08-29 3M Innovative Properties Company Organic polymers, electronic devices, and methods
US7279777B2 (en) * 2003-05-08 2007-10-09 3M Innovative Properties Company Organic polymers, laminates, and capacitors
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US20050079418A1 (en) * 2003-10-14 2005-04-14 3M Innovative Properties Company In-line deposition processes for thin film battery fabrication
US20050130422A1 (en) * 2003-12-12 2005-06-16 3M Innovative Properties Company Method for patterning films
US7078937B2 (en) * 2003-12-17 2006-07-18 3M Innovative Properties Company Logic circuitry powered by partially rectified ac waveform
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US7667230B2 (en) * 2006-03-31 2010-02-23 3M Innovative Properties Company Electronic devices containing acene-thiophene copolymers
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US7495251B2 (en) * 2006-04-21 2009-02-24 3M Innovative Properties Company Electronic devices containing acene-thiophene copolymers with silylethynyl groups
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JP6529329B2 (ja) * 2015-05-01 2019-06-12 株式会社ブイ・テクノロジー タッチパネル製造方法、タッチパネルのガラス基板及びタッチパネル製造用マスク
WO2017058528A1 (en) 2015-09-28 2017-04-06 3M Innovative Properties Company Patterned film article comprising cleavable crosslinker and methods
CN105353589B (zh) * 2015-12-01 2018-02-23 广州杰赛科技股份有限公司 一种高效pcb二次曝光方法
CN106435473A (zh) * 2016-11-11 2017-02-22 京东方科技集团股份有限公司 掩模板及其制作方法、有机发光二极管显示器的制作方法
WO2019173626A1 (en) 2018-03-07 2019-09-12 Space Charge, LLC Thin-film solid-state energy-storage devices
CN109860062A (zh) * 2018-11-29 2019-06-07 华映科技（集团）股份有限公司 一种金属氧化物晶体管制作源极漏极的方法
CN110993562B (zh) * 2019-11-07 2023-09-29 复旦大学 一种基于全硅基掩膜版的薄膜器件的制备方法
JP2021175824A (ja) * 2020-03-13 2021-11-04 大日本印刷株式会社 有機デバイスの製造装置の蒸着室の評価方法、評価方法で用いられる標準マスク装置及び標準基板、標準マスク装置の製造方法、評価方法で評価された蒸着室を備える有機デバイスの製造装置、評価方法で評価された蒸着室において形成された蒸着層を備える有機デバイス、並びに有機デバイスの製造装置の蒸着室のメンテナンス方法

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Also Published As

Publication number Publication date
EP1474542A1 (de) 2004-11-10
CN1633515A (zh) 2005-06-29
US20060057857A1 (en) 2006-03-16
CN1633515B (zh) 2010-04-28
EP1474542B1 (de) 2009-05-13
WO2003069014A1 (en) 2003-08-21
ATE431440T1 (de) 2009-05-15
AU2003209312A1 (en) 2003-09-04
JP2005518478A (ja) 2005-06-23
EP2060654A1 (de) 2009-05-20
KR20040091037A (ko) 2004-10-27
US20030151118A1 (en) 2003-08-14

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