ATE550779T1 - Ätzverfahren für nickelsilizid und verfahren zur herstellung von leiterbahnen - Google Patents

Ätzverfahren für nickelsilizid und verfahren zur herstellung von leiterbahnen

Info

Publication number
ATE550779T1
ATE550779T1 AT06770811T AT06770811T ATE550779T1 AT E550779 T1 ATE550779 T1 AT E550779T1 AT 06770811 T AT06770811 T AT 06770811T AT 06770811 T AT06770811 T AT 06770811T AT E550779 T1 ATE550779 T1 AT E550779T1
Authority
AT
Austria
Prior art keywords
nickel silicide
conductor tracks
silicide
producing conductor
etching process
Prior art date
Application number
AT06770811T
Other languages
English (en)
Inventor
Prashant Raghu
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE550779T1 publication Critical patent/ATE550779T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
    • H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar
AT06770811T 2005-06-07 2006-05-19 Ätzverfahren für nickelsilizid und verfahren zur herstellung von leiterbahnen ATE550779T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/146,648 US7371333B2 (en) 2005-06-07 2005-06-07 Methods of etching nickel silicide and cobalt silicide and methods of forming conductive lines
PCT/US2006/019693 WO2006132789A2 (en) 2005-06-07 2006-05-19 Methods of etching nickel silicide and cobalt silicide and methods of forming conductive lines

Publications (1)

Publication Number Publication Date
ATE550779T1 true ATE550779T1 (de) 2012-04-15

Family

ID=37084600

Family Applications (2)

Application Number Title Priority Date Filing Date
AT10011564T ATE550780T1 (de) 2005-06-07 2006-05-19 Ätzverfahren für nickelsilicid und kobaltsilicid und verfahren zur herstellung von leiterbahnen
AT06770811T ATE550779T1 (de) 2005-06-07 2006-05-19 Ätzverfahren für nickelsilizid und verfahren zur herstellung von leiterbahnen

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AT10011564T ATE550780T1 (de) 2005-06-07 2006-05-19 Ätzverfahren für nickelsilicid und kobaltsilicid und verfahren zur herstellung von leiterbahnen

Country Status (8)

Country Link
US (1) US7371333B2 (de)
EP (2) EP2276062B1 (de)
JP (1) JP4863093B2 (de)
KR (1) KR100966002B1 (de)
CN (1) CN100536088C (de)
AT (2) ATE550780T1 (de)
TW (1) TWI299202B (de)
WO (1) WO2006132789A2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8283258B2 (en) 2007-08-16 2012-10-09 Micron Technology, Inc. Selective wet etching of hafnium aluminum oxide films
US20120315754A1 (en) * 2011-06-08 2012-12-13 Micron Technology, Inc. Interconnection barrier material device and method
TWI517235B (zh) * 2013-03-01 2016-01-11 栗田工業股份有限公司 半導體基板洗淨系統以及半導體基板的洗淨方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4663191A (en) 1985-10-25 1987-05-05 International Business Machines Corporation Salicide process for forming low sheet resistance doped silicon junctions
JPH03239327A (ja) * 1990-02-16 1991-10-24 Fuji Electric Co Ltd 表面処理用エッチング液及びこれを用いたメッキ方法
DE69625747T2 (de) 1995-06-19 2003-10-23 Imec Inter Uni Micro Electr Ätzverfahren für CoSi2-Schichten und Verfahren zur Herstellung von Schottky-Barrieren Detektoren unter Verwendung desselben
JP3295679B2 (ja) * 1995-08-04 2002-06-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5933757A (en) * 1997-06-23 1999-08-03 Lsi Logic Corporation Etch process selective to cobalt silicide for formation of integrated circuit structures
JPH1154455A (ja) 1997-07-30 1999-02-26 Sharp Corp 半導体装置の製造方法
US6074960A (en) * 1997-08-20 2000-06-13 Micron Technology, Inc. Method and composition for selectively etching against cobalt silicide
JPH11195619A (ja) * 1998-01-06 1999-07-21 Sony Corp 半導体装置の製造方法
JP2000077356A (ja) * 1998-06-25 2000-03-14 Texas Instr Inc <Ti> 自己整列ケイ化の方法
US6589884B1 (en) 2000-08-31 2003-07-08 Micron Technology, Inc. Method of forming an inset in a tungsten silicide layer in a transistor gate stack
US6362095B1 (en) * 2000-10-05 2002-03-26 Advanced Micro Devices, Inc. Nickel silicide stripping after nickel silicide formation
JP4176362B2 (ja) * 2001-03-16 2008-11-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7052943B2 (en) 2001-03-16 2006-05-30 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6524901B1 (en) * 2002-06-20 2003-02-25 Micron Technology, Inc. Method for forming a notched damascene planar poly/metal gate
DE10335101B4 (de) * 2003-07-31 2010-02-04 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung einer Polysiliziumleitung mit einem Metallsilizidgebiet, das eine Linienbreitenreduzierung ermöglicht
US7322406B2 (en) 2004-07-16 2008-01-29 Frank's Casing Crew & Rental Tools, Inc. Elevation sensor for a service hose and an apparatus for positioning and stabbing well tubulars
TWI283442B (en) * 2004-09-09 2007-07-01 Sez Ag Method for selective etching

Also Published As

Publication number Publication date
TWI299202B (en) 2008-07-21
TW200735270A (en) 2007-09-16
EP1891665B1 (de) 2012-03-21
WO2006132789A2 (en) 2006-12-14
CN101194347A (zh) 2008-06-04
WO2006132789A3 (en) 2007-03-08
ATE550780T1 (de) 2012-04-15
US7371333B2 (en) 2008-05-13
CN100536088C (zh) 2009-09-02
JP4863093B2 (ja) 2012-01-25
EP2276062A1 (de) 2011-01-19
EP2276062B1 (de) 2012-03-21
EP1891665A2 (de) 2008-02-27
KR100966002B1 (ko) 2010-06-24
JP2008543108A (ja) 2008-11-27
US20060276048A1 (en) 2006-12-07
KR20080017450A (ko) 2008-02-26

Similar Documents

Publication Publication Date Title
DE602004022002D1 (de) Verfahren zur Herstellung eines Galliumnitridsubstrats für Halbleiter und damit hergestelltes Substrats
ATE508689T1 (de) Verfahren zur herstellung eines stechelements
WO2007092229A3 (en) Transforming metrology data from a semiconductor treatment system using multivariate analysis
ATE548327T1 (de) Verfahren zur herstellung von nanostrukturen
DK2140945T3 (da) Fremgangsmåde til at producere organisk tynd film
DE602006020327D1 (de) 2-phenoxy-n-(1,3,4-thiadizol-2-yl)pyridin-3-aminder-hemmer zur behandlung thromboembolischer erkrankungen
ATE505813T1 (de) Herstellung von luftspalten um eine verbindungsleitung herum
WO2006083357A3 (en) Methods and devices for making carbon nanotubes and compositions thereof
DE60318785D1 (de) Methode zur Herstellung von halbleitenden Nanopartikeln
DE602005020661D1 (de) Neuer schaumstoffmodifikator, aus diesem neuen schaumstoffmodifikator hergestellte schaumstoffe und verfahren zur herstellung dieser schaumstoffe
ATE519223T1 (de) Verfahren zur herstellung mehrerer halbleiteranordnungen und trägersubstrat
ATE544093T1 (de) Imprintmethode zur herstellung einer reliefschicht und deren nutzung als ätzmaske
DE502005000420D1 (de) Verfahren zur Herstellung von Mercaptooganyl (alkoxysilanen)
ATE480650T1 (de) Tiegel zur behandlung von schmelzflüssigem silicium und verfahren zu seiner herstellung
DE602006003393D1 (de) Verfahren zur Herstellung von Synthesegas durch Dampfreformieren und partielle Oxidation
ATE523579T1 (de) Verfahren zur herstellung von brea aus teer und durch oxidative thermische behanlung von kohleteer erhaltenen destillaten davon
DE60317264D1 (de) Verfahren zur Herstellung von Mikrohalbleiterbauelementen
DE60327049D1 (de) Tinte für tintenstrahldruck, methode zur herstellung der tinte sowie tintenstrahldruckmethode
ATE550780T1 (de) Ätzverfahren für nickelsilicid und kobaltsilicid und verfahren zur herstellung von leiterbahnen
DE602004002549D1 (de) Zusammensetzung zur Herstellung eines organischen und isolierenden Filmes sowie der daraus hergestellte Film
DE502006008141D1 (de) Halbleitersubstrat und Verfahren zur Herstellung
DE60207031D1 (de) Verfahren zur herstellung von octafluorocyclobutan
WO2008132926A1 (ja) エッチング液およびこれを用いたプラスチック表面の金属化方法
ATE299849T1 (de) Verfahren zur herstellung von octafluoropropan
ATE392494T1 (de) Verfahren zum beschichten von substraten in inline-anlagen