DE69625747T2 - Ätzverfahren für CoSi2-Schichten und Verfahren zur Herstellung von Schottky-Barrieren Detektoren unter Verwendung desselben - Google Patents
Ätzverfahren für CoSi2-Schichten und Verfahren zur Herstellung von Schottky-Barrieren Detektoren unter Verwendung desselbenInfo
- Publication number
- DE69625747T2 DE69625747T2 DE69625747T DE69625747T DE69625747T2 DE 69625747 T2 DE69625747 T2 DE 69625747T2 DE 69625747 T DE69625747 T DE 69625747T DE 69625747 T DE69625747 T DE 69625747T DE 69625747 T2 DE69625747 T2 DE 69625747T2
- Authority
- DE
- Germany
- Prior art keywords
- same
- schottky barrier
- cosi2
- layers
- barrier detectors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910018999 CoSi2 Inorganic materials 0.000 title abstract 3
- 238000005530 etching Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 230000004888 barrier function Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66492—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a pocket or a lightly doped drain selectively formed at the side of the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6653—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using the removal of at least part of spacer, e.g. disposable spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Weting (AREA)
- Light Receiving Elements (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Drying Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US242695P | 1995-06-19 | 1995-06-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69625747D1 DE69625747D1 (de) | 2003-02-20 |
DE69625747T2 true DE69625747T2 (de) | 2003-10-23 |
Family
ID=21700706
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69636818T Expired - Lifetime DE69636818T2 (de) | 1995-06-19 | 1996-06-19 | Verfahren zur selbst-justierten Herstellung von implantierten Gebieten |
DE69625747T Expired - Lifetime DE69625747T2 (de) | 1995-06-19 | 1996-06-19 | Ätzverfahren für CoSi2-Schichten und Verfahren zur Herstellung von Schottky-Barrieren Detektoren unter Verwendung desselben |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69636818T Expired - Lifetime DE69636818T2 (de) | 1995-06-19 | 1996-06-19 | Verfahren zur selbst-justierten Herstellung von implantierten Gebieten |
Country Status (4)
Country | Link |
---|---|
US (2) | US6153484A (de) |
EP (1) | EP0750338B1 (de) |
AT (2) | ATE350764T1 (de) |
DE (2) | DE69636818T2 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3183249B2 (ja) * | 1998-03-30 | 2001-07-09 | 日本電気株式会社 | 高抵抗負荷スタチック型ramの製造方法 |
US20030235936A1 (en) * | 1999-12-16 | 2003-12-25 | Snyder John P. | Schottky barrier CMOS device and method |
US6692976B1 (en) * | 2000-08-31 | 2004-02-17 | Agilent Technologies, Inc. | Post-etch cleaning treatment |
US6368963B1 (en) * | 2000-09-12 | 2002-04-09 | Advanced Micro Devices, Inc. | Passivation of semiconductor device surfaces using an iodine/ethanol solution |
EP1468440A2 (de) | 2002-01-23 | 2004-10-20 | Spinnaker Semiconductor, Inc. | Feldeffekttransistor mit schottky- oder schottky-artiger source- und/oder drain-kontakt und mit verspanntem halbleitersubstrat |
US6974737B2 (en) * | 2002-05-16 | 2005-12-13 | Spinnaker Semiconductor, Inc. | Schottky barrier CMOS fabrication method |
US7049667B2 (en) | 2002-09-27 | 2006-05-23 | Hrl Laboratories, Llc | Conductive channel pseudo block process and circuit to inhibit reverse engineering |
US6979606B2 (en) * | 2002-11-22 | 2005-12-27 | Hrl Laboratories, Llc | Use of silicon block process step to camouflage a false transistor |
GB2430800B (en) * | 2002-11-22 | 2007-06-27 | Hrl Lab Llc | Use of silicon block process step to camouflage a false transistor |
JP4846239B2 (ja) | 2002-12-13 | 2011-12-28 | エイチアールエル ラボラトリーズ,エルエルシー | ウェル注入を用いた集積回路の改変 |
US6905923B1 (en) | 2003-07-15 | 2005-06-14 | Advanced Micro Devices, Inc. | Offset spacer process for forming N-type transistors |
US7179745B1 (en) * | 2004-06-04 | 2007-02-20 | Advanced Micro Devices, Inc. | Method for offsetting a silicide process from a gate electrode of a semiconductor device |
US7242063B1 (en) | 2004-06-29 | 2007-07-10 | Hrl Laboratories, Llc | Symmetric non-intrusive and covert technique to render a transistor permanently non-operable |
US7371333B2 (en) | 2005-06-07 | 2008-05-13 | Micron Technology, Inc. | Methods of etching nickel silicide and cobalt silicide and methods of forming conductive lines |
US8168487B2 (en) | 2006-09-28 | 2012-05-01 | Hrl Laboratories, Llc | Programmable connection and isolation of active regions in an integrated circuit using ambiguous features to confuse a reverse engineer |
US8193602B2 (en) * | 2010-04-20 | 2012-06-05 | Texas Instruments Incorporated | Schottky diode with control gate for optimization of the on state resistance, the reverse leakage, and the reverse breakdown |
CN104752168B (zh) * | 2015-04-23 | 2017-10-17 | 上海华力微电子有限公司 | 一种去除鳍式场效应晶体管中掺磷碳化硅薄膜缺陷的方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4378628A (en) * | 1981-08-27 | 1983-04-05 | Bell Telephone Laboratories, Incorporated | Cobalt silicide metallization for semiconductor integrated circuits |
US4569722A (en) * | 1984-11-23 | 1986-02-11 | At&T Bell Laboratories | Ethylene glycol etch for processes using metal silicides |
GB2214349B (en) * | 1988-01-19 | 1991-06-26 | Standard Microsyst Smc | Process for fabricating mos devices |
US5821175A (en) * | 1988-07-08 | 1998-10-13 | Cauldron Limited Partnership | Removal of surface contaminants by irradiation using various methods to achieve desired inert gas flow over treated surface |
US4990988A (en) * | 1989-06-09 | 1991-02-05 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Laterally stacked Schottky diodes for infrared sensor applications |
US5290715A (en) * | 1991-12-31 | 1994-03-01 | U.S. Philips Corporation | Method of making dielectrically isolated metal base transistors and permeable base transistors |
US5605865A (en) * | 1995-04-03 | 1997-02-25 | Motorola Inc. | Method for forming self-aligned silicide in a semiconductor device using vapor phase reaction |
US5728625A (en) * | 1996-04-04 | 1998-03-17 | Lucent Technologies Inc. | Process for device fabrication in which a thin layer of cobalt silicide is formed |
US5780362A (en) * | 1996-06-04 | 1998-07-14 | Wang; Qingfeng | CoSi2 salicide method |
US5814537A (en) * | 1996-12-18 | 1998-09-29 | Sharp Microelectronics Technology,Inc. | Method of forming transistor electrodes from directionally deposited silicide |
US5849091A (en) * | 1997-06-02 | 1998-12-15 | Micron Technology, Inc. | Megasonic cleaning methods and apparatus |
US5934980A (en) * | 1997-06-09 | 1999-08-10 | Micron Technology, Inc. | Method of chemical mechanical polishing |
US5834356A (en) * | 1997-06-27 | 1998-11-10 | Vlsi Technology, Inc. | Method of making high resistive structures in salicided process semiconductor devices |
US6074960A (en) * | 1997-08-20 | 2000-06-13 | Micron Technology, Inc. | Method and composition for selectively etching against cobalt silicide |
US5937319A (en) * | 1997-10-31 | 1999-08-10 | Advanced Micro Devices, Inc. | Method of making a metal oxide semiconductor (MOS) transistor polysilicon gate with a size beyond photolithography limitation by using polysilicidation and selective etching |
-
1996
- 1996-06-19 AT AT99200531T patent/ATE350764T1/de not_active IP Right Cessation
- 1996-06-19 DE DE69636818T patent/DE69636818T2/de not_active Expired - Lifetime
- 1996-06-19 EP EP96870078A patent/EP0750338B1/de not_active Expired - Lifetime
- 1996-06-19 US US08/814,973 patent/US6153484A/en not_active Expired - Lifetime
- 1996-06-19 DE DE69625747T patent/DE69625747T2/de not_active Expired - Lifetime
- 1996-06-19 AT AT96870078T patent/ATE231286T1/de not_active IP Right Cessation
-
2000
- 2000-01-06 US US09/478,252 patent/US6255227B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6255227B1 (en) | 2001-07-03 |
EP0750338B1 (de) | 2003-01-15 |
US6153484A (en) | 2000-11-28 |
EP0750338A3 (de) | 1997-04-16 |
DE69636818D1 (de) | 2007-02-15 |
ATE350764T1 (de) | 2007-01-15 |
DE69636818T2 (de) | 2007-11-08 |
EP0750338A2 (de) | 1996-12-27 |
DE69625747D1 (de) | 2003-02-20 |
ATE231286T1 (de) | 2003-02-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |