ATE73964T1 - Duennschicht-feldeffekttransistor mit kurzem kanal und verfahren zu seiner herstellung. - Google Patents

Duennschicht-feldeffekttransistor mit kurzem kanal und verfahren zu seiner herstellung.

Info

Publication number
ATE73964T1
ATE73964T1 AT84112205T AT84112205T ATE73964T1 AT E73964 T1 ATE73964 T1 AT E73964T1 AT 84112205 T AT84112205 T AT 84112205T AT 84112205 T AT84112205 T AT 84112205T AT E73964 T1 ATE73964 T1 AT E73964T1
Authority
AT
Austria
Prior art keywords
thin film
field effect
effect transistor
manufacture
channel field
Prior art date
Application number
AT84112205T
Other languages
English (en)
Inventor
Mohshi Yang
David J Vesey
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Application granted granted Critical
Publication of ATE73964T1 publication Critical patent/ATE73964T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0338—Process specially adapted to improve the resolution of the mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
AT84112205T 1983-12-05 1984-10-11 Duennschicht-feldeffekttransistor mit kurzem kanal und verfahren zu seiner herstellung. ATE73964T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/557,773 US4654295A (en) 1983-12-05 1983-12-05 Method of making short channel thin film field effect transistor
EP84112205A EP0151224B1 (de) 1983-12-05 1984-10-11 Dünnschicht-Feldeffekttransistor mit kurzem Kanal und Verfahren zu seiner Herstellung

Publications (1)

Publication Number Publication Date
ATE73964T1 true ATE73964T1 (de) 1992-04-15

Family

ID=24226830

Family Applications (1)

Application Number Title Priority Date Filing Date
AT84112205T ATE73964T1 (de) 1983-12-05 1984-10-11 Duennschicht-feldeffekttransistor mit kurzem kanal und verfahren zu seiner herstellung.

Country Status (6)

Country Link
US (1) US4654295A (de)
EP (1) EP0151224B1 (de)
JP (1) JPS60144973A (de)
AT (1) ATE73964T1 (de)
CA (1) CA1233571A (de)
DE (1) DE3485599D1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60164364A (ja) * 1984-02-07 1985-08-27 Seiko Instr & Electronics Ltd 薄膜半導体装置の製造方法
US5063168A (en) * 1986-07-02 1991-11-05 National Semiconductor Corporation Process for making bipolar transistor with polysilicon stringer base contact
US4974046A (en) * 1986-07-02 1990-11-27 National Seimconductor Corporation Bipolar transistor with polysilicon stringer base contact
JP3255942B2 (ja) * 1991-06-19 2002-02-12 株式会社半導体エネルギー研究所 逆スタガ薄膜トランジスタの作製方法
US5294520A (en) * 1992-08-25 1994-03-15 International Business Machines Corporation Zero undercut etch process
US5780922A (en) * 1996-11-27 1998-07-14 The Regents Of The University Of California Ultra-low phase noise GE MOSFETs
US6362097B1 (en) 1998-07-14 2002-03-26 Applied Komatsu Technlology, Inc. Collimated sputtering of semiconductor and other films
US6268621B1 (en) 1999-08-03 2001-07-31 International Business Machines Corporation Vertical channel field effect transistor
US6991987B1 (en) * 2002-11-27 2006-01-31 Advanced Micro Devices, Inc. Method for producing a low defect homogeneous oxynitride
JP3908213B2 (ja) * 2003-09-30 2007-04-25 富士通株式会社 レジストパターンの形成方法及び半導体装置の製造方法
WO2007142603A1 (en) * 2006-06-09 2007-12-13 Agency For Science, Technology And Research An integrated shadow mask and method of fabrication thereof

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB967002A (en) * 1961-05-05 1964-08-19 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
US3669661A (en) * 1970-03-06 1972-06-13 Westinghouse Electric Corp Method of producing thin film transistors
US3849136A (en) * 1973-07-31 1974-11-19 Ibm Masking of deposited thin films by use of a masking layer photoresist composite
DE2432719B2 (de) * 1974-07-08 1977-06-02 Siemens AG, 1000 Berlin und 8000 München Verfahren zum erzeugen von feinen strukturen aus aufdampfbaren materialien auf einer unterlage und anwendung des verfahrens
US4067724A (en) * 1975-09-13 1978-01-10 Bayer Aktiengesellschaft N-(1,2,4-Triazin-5-on-4-yl)-glycines and herbicidal compositions
US4265934A (en) * 1975-12-12 1981-05-05 Hughes Aircraft Company Method for making improved Schottky-barrier gate gallium arsenide field effect devices
US4045594A (en) * 1975-12-31 1977-08-30 Ibm Corporation Planar insulation of conductive patterns by chemical vapor deposition and sputtering
JPS53104185A (en) * 1977-02-23 1978-09-11 Hitachi Ltd Production of semiconductor device
US4212935A (en) * 1978-02-24 1980-07-15 International Business Machines Corporation Method of modifying the development profile of photoresists
US4293624A (en) * 1979-06-26 1981-10-06 The Perkin-Elmer Corporation Method for making a mask useful in X-ray lithography
JPS5648151A (en) * 1979-09-26 1981-05-01 Nec Corp Wiring formation of semiconductor device
JPS5669835A (en) * 1979-11-09 1981-06-11 Japan Electronic Ind Dev Assoc<Jeida> Method for forming thin film pattern
US4389481A (en) * 1980-06-02 1983-06-21 Xerox Corporation Method of making planar thin film transistors, transistor arrays
JPS5744143A (en) * 1980-08-29 1982-03-12 Tokyo Ohka Kogyo Co Ltd Composition and method for forming micropattern
US4376672A (en) * 1981-10-26 1983-03-15 Applied Materials, Inc. Materials and methods for plasma etching of oxides and nitrides of silicon
US4409262A (en) * 1982-02-01 1983-10-11 The United States Of America As Represented By The Secretary Of The Navy Fabrication of submicron-wide lines with shadow depositions
JPS58148458A (ja) * 1982-03-01 1983-09-03 Stanley Electric Co Ltd 薄膜トランジスタ
JPS58170067A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd 薄膜トランジスタの製造方法

Also Published As

Publication number Publication date
JPS60144973A (ja) 1985-07-31
EP0151224A2 (de) 1985-08-14
EP0151224B1 (de) 1992-03-18
DE3485599D1 (de) 1992-04-23
CA1233571A (en) 1988-03-01
US4654295A (en) 1987-03-31
EP0151224A3 (en) 1987-04-01

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee