ATE548327T1 - Verfahren zur herstellung von nanostrukturen - Google Patents

Verfahren zur herstellung von nanostrukturen

Info

Publication number
ATE548327T1
ATE548327T1 AT06727077T AT06727077T ATE548327T1 AT E548327 T1 ATE548327 T1 AT E548327T1 AT 06727077 T AT06727077 T AT 06727077T AT 06727077 T AT06727077 T AT 06727077T AT E548327 T1 ATE548327 T1 AT E548327T1
Authority
AT
Austria
Prior art keywords
nanostructures
nanomaterials
substrate
forming
carbon nanotubes
Prior art date
Application number
AT06727077T
Other languages
English (en)
Inventor
Sembukutiarachilage Silva
Ben Poul Jensen
Gaun Chen
Original Assignee
Surrey Nanosystems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Surrey Nanosystems Ltd filed Critical Surrey Nanosystems Ltd
Application granted granted Critical
Publication of ATE548327T1 publication Critical patent/ATE548327T1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26Deposition of carbon only
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/15Nano-sized carbon materials
    • C01B32/158Carbon nanotubes
    • C01B32/16Preparation
    • C01B32/162Preparation characterised by catalysts
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/26Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264Up to 3 mils
    • Y10T428/2651 mil or less

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
AT06727077T 2005-05-11 2006-05-11 Verfahren zur herstellung von nanostrukturen ATE548327T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0509499.0A GB0509499D0 (en) 2005-05-11 2005-05-11 Use of thermal barrier for low temperature growth of nanostructures using top-down heating approach
PCT/GB2006/001726 WO2006120449A1 (en) 2005-05-11 2006-05-11 Nanostructure production methods and apparatus

Publications (1)

Publication Number Publication Date
ATE548327T1 true ATE548327T1 (de) 2012-03-15

Family

ID=34685363

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06727077T ATE548327T1 (de) 2005-05-11 2006-05-11 Verfahren zur herstellung von nanostrukturen

Country Status (8)

Country Link
US (1) US9334167B2 (de)
EP (1) EP1885909B1 (de)
JP (2) JP5097107B2 (de)
KR (2) KR20140022423A (de)
CN (1) CN101213321B (de)
AT (1) ATE548327T1 (de)
GB (1) GB0509499D0 (de)
WO (1) WO2006120449A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0509499D0 (en) 2005-05-11 2005-06-15 Univ Surrey Use of thermal barrier for low temperature growth of nanostructures using top-down heating approach
WO2008118794A2 (en) 2007-03-23 2008-10-02 Lydall, Inc. Substrate for carrying catalytic particles
US8674462B2 (en) 2007-07-25 2014-03-18 Infineon Technologies Ag Sensor package
US8919428B2 (en) * 2007-10-17 2014-12-30 Purdue Research Foundation Methods for attaching carbon nanotubes to a carbon substrate
KR101430969B1 (ko) * 2008-11-16 2014-08-18 금호석유화학 주식회사 급속냉각장치를 가지는 탄소나노튜브 반응챔버
US8541058B2 (en) * 2009-03-06 2013-09-24 Timothy S. Fisher Palladium thiolate bonding of carbon nanotubes
US8323439B2 (en) 2009-03-08 2012-12-04 Hewlett-Packard Development Company, L.P. Depositing carbon nanotubes onto substrate
US9376321B2 (en) * 2009-05-29 2016-06-28 Postech Academy-Industry Foundation Method and apparatus for manufacturing a nanowire
GB2478269A (en) * 2009-12-18 2011-09-07 Surrey Nanosystems Ltd Nanomaterials growth system and method
TWI466816B (zh) * 2009-12-30 2015-01-01 Univ Tunghai 筆直直立奈米線陣列結構及其製造方法
CN101942649A (zh) * 2010-10-21 2011-01-12 韩山师范学院 一种实现低温构筑高密度纳米硅结构的方法
KR101806916B1 (ko) * 2011-03-17 2017-12-12 한화테크윈 주식회사 그래핀 필름 제조 장치 및 그래핀 필름 제조 방법
KR102095494B1 (ko) * 2013-07-01 2020-03-31 삼성전자주식회사 씨모스 이미지 센서
KR101626404B1 (ko) * 2013-10-02 2016-06-13 김승규 할로겐 램프 제조방법
GB201421827D0 (en) 2014-12-09 2015-01-21 Short Brothers Plc Fibre-reinforced components including nanostructures
GB201515271D0 (en) * 2015-08-27 2015-10-14 Surrey Nanosystems Ltd Ultra low reflectivity coating and method therefor
US11558937B2 (en) * 2017-01-20 2023-01-17 Whirlpool Corporation Transparent conductive door for a microwave oven and methods of making the same
CN108335916A (zh) * 2017-12-20 2018-07-27 肇庆市华师大光电产业研究院 一种多壁碳纳米管@x复合电极及其制备方法和应用

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2605647B1 (fr) * 1986-10-27 1993-01-29 Nissim Yves Procede de depot en phase vapeur par flash thermique d'une couche isolante sur un substrat en materiau iii-v, application a la fabrication d'une structure mis
US6140612A (en) * 1995-06-07 2000-10-31 Lam Research Corporation Controlling the temperature of a wafer by varying the pressure of gas between the underside of the wafer and the chuck
US5679404A (en) * 1995-06-07 1997-10-21 Saint-Gobain/Norton Industrial Ceramics Corporation Method for depositing a substance with temperature control
JP2002518280A (ja) * 1998-06-19 2002-06-25 ザ・リサーチ・ファウンデーション・オブ・ステイト・ユニバーシティ・オブ・ニューヨーク 整列した自立炭素ナノチューブおよびその合成
JP3423639B2 (ja) 1999-04-27 2003-07-07 キヤノン株式会社 カーボンナノチューブの製造方法および製造装置
KR100371161B1 (ko) 1999-12-18 2003-02-07 엘지전자 주식회사 전계방출소자의 제조방법
JP2001192829A (ja) 2000-01-05 2001-07-17 Ulvac Japan Ltd カーボンナノチューブ薄膜形成ecrプラズマcvd装置及び該薄膜の形成方法
JP4448586B2 (ja) 2000-01-05 2010-04-14 株式会社アルバック 大口径カーボンナノチューブ薄膜形成プラズマcvd装置及び該薄膜の形成方法
JP3859199B2 (ja) * 2000-07-18 2006-12-20 エルジー エレクトロニクス インコーポレイティド カーボンナノチューブの水平成長方法及びこれを利用した電界効果トランジスタ
KR100382879B1 (ko) 2000-09-22 2003-05-09 일진나노텍 주식회사 탄소 나노튜브 합성 방법 및 이에 이용되는 탄소 나노튜브합성장치.
AUPR421701A0 (en) * 2001-04-04 2001-05-17 Commonwealth Scientific And Industrial Research Organisation Process and apparatus for the production of carbon nanotubes
CN1325372C (zh) 2001-07-27 2007-07-11 萨里大学 碳纳米管的制备
KR20030028296A (ko) * 2001-09-28 2003-04-08 학교법인 한양학원 플라즈마 화학기상증착 장치 및 이를 이용한 탄소나노튜브제조방법
US6858197B1 (en) * 2002-03-13 2005-02-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Controlled patterning and growth of single wall and multi-wall carbon nanotubes
CN1193930C (zh) 2002-04-01 2005-03-23 财团法人工业技术研究院 直接在基材上低温合成纳米碳管的方法
US20040037972A1 (en) * 2002-08-22 2004-02-26 Kang Simon Patterned granulized catalyst layer suitable for electron-emitting device, and associated fabrication method
US7067867B2 (en) * 2002-09-30 2006-06-27 Nanosys, Inc. Large-area nonenabled macroelectronic substrates and uses therefor
AU2002344610A1 (en) * 2002-10-30 2004-05-25 Fuji Xerox Co., Ltd. Production system and production method of carbon nanotube
US6841002B2 (en) * 2002-11-22 2005-01-11 Cdream Display Corporation Method for forming carbon nanotubes with post-treatment step
US20040152240A1 (en) * 2003-01-24 2004-08-05 Carlos Dangelo Method and apparatus for the use of self-assembled nanowires for the removal of heat from integrated circuits
US7396569B2 (en) * 2003-02-10 2008-07-08 Nanoscale Materials, Inc. Rapidly self-assembled thin films and functional decals
US20050109280A1 (en) * 2003-09-22 2005-05-26 Chen Xiangqun S. Rapid thermal chemical vapor deposition apparatus and method
US20060018820A1 (en) * 2004-07-20 2006-01-26 Little Reginald B Magnetic stimulated nucleation of single crystal diamonds
JP4773732B2 (ja) * 2005-03-08 2011-09-14 株式会社三菱地所設計 セキュリティシステムおよびそのセキュリティシステムを備える集合住宅
GB0509499D0 (en) 2005-05-11 2005-06-15 Univ Surrey Use of thermal barrier for low temperature growth of nanostructures using top-down heating approach

Also Published As

Publication number Publication date
CN101213321A (zh) 2008-07-02
GB0509499D0 (en) 2005-06-15
WO2006120449A8 (en) 2008-01-24
US9334167B2 (en) 2016-05-10
WO2006120449A1 (en) 2006-11-16
KR20140022423A (ko) 2014-02-24
EP1885909A1 (de) 2008-02-13
JP5612033B2 (ja) 2014-10-22
KR101368457B1 (ko) 2014-03-12
JP2008540313A (ja) 2008-11-20
EP1885909B1 (de) 2012-03-07
KR20080010414A (ko) 2008-01-30
US20090061217A1 (en) 2009-03-05
CN101213321B (zh) 2010-12-08
JP2013014507A (ja) 2013-01-24
JP5097107B2 (ja) 2012-12-12

Similar Documents

Publication Publication Date Title
ATE548327T1 (de) Verfahren zur herstellung von nanostrukturen
BRPI0909305A2 (pt) Processo e sistema de depósito de um metal ou metaloide sobre nanotubos de carbono
WO2008132314A3 (fr) Procede de synthese de nanoparticules metalliques cubiques en presence de deux reducteurs
GB2516372A (en) High quality large scale single and multilayer graphene production by chemical vapor deposition
DE602005002635D1 (de) Verfahren zur abscheidung von galliumoxidbeschichtungen auf flachglas
DE602005002130D1 (de) Metallorganisches gerüstmaterial, herstellung und verwendung
WO2008081650A1 (ja) 高耐食性部材およびその製造方法
EA201100568A1 (ru) Способ получения карбида кремния высокой чистоты из углеводородов и оксида кремния с помощью прокаливания
GB0624376D0 (en) A universal method for selective area growth of organic molecular by vapour deposition
TW200743677A (en) Process for preparing a nano-carbon material
TW200833861A (en) Method for growing carbon nanotubes directly on the carbon fiber
WO2005075341A3 (fr) Procede d'obtention de nanotubes de carbone sur des supports et composites les renfermant
ATE422561T1 (de) Nicht-verdampfbare getter-vielschicht- abscheidungen erhalten durch kathodische abscheidung und verfahren zu deren herstellung
BRPI0515347A (pt) diamante de cristal único cvd ultra-resistente e crescimento tridimensional do mesmo
TW200704589A (en) Process for the production of hydrochlorosilanes
ATE438748T1 (de) Vorrichtung und verfahren zur kontinuierlichen gasphasenabscheidung unter atmosphärendruck und deren verwendung
WO2008073926A3 (en) Formation of epitaxial layers containing silicon
TW200715375A (en) Low-temperature catalyzed formation of segmented nanowire of dielectric material
TW200730652A (en) Silicon body formation method and device thereof
JP2009511283A5 (de)
ATE460979T1 (de) Verfahren zur herstellung von nanoskaligen pulvern
TW200802551A (en) Semiconductor layer, process for forming the same, and semiconductor light emitting device
MY157133A (en) Silicon containing halogenide, method for producing the same, and use of the same
TW200700314A (en) A method of fabricating carbon nanotubes
UA103480C2 (ru) Галогенидсодержащий кремний, способ его получения и применения