JP2005518478A - 回路製作用アパーチャマスク - Google Patents

回路製作用アパーチャマスク Download PDF

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Publication number
JP2005518478A
JP2005518478A JP2003568120A JP2003568120A JP2005518478A JP 2005518478 A JP2005518478 A JP 2005518478A JP 2003568120 A JP2003568120 A JP 2003568120A JP 2003568120 A JP2003568120 A JP 2003568120A JP 2005518478 A JP2005518478 A JP 2005518478A
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JP
Japan
Prior art keywords
aperture mask
pattern
mask
deposition
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003568120A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005518478A5 (enExample
Inventor
エフ． ボード，ポール
アール． フレミング，パトリック
エー． ハース，マイケル
ダブリュ． ケリー，トミー
ブイ． マイヤース，ドーン
セイス，スティーブン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of JP2005518478A publication Critical patent/JP2005518478A/ja
Publication of JP2005518478A5 publication Critical patent/JP2005518478A5/ja
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Picture Signal Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electron Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2003568120A 2002-02-14 2003-01-21 回路製作用アパーチャマスク Pending JP2005518478A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/076,003 US20030151118A1 (en) 2002-02-14 2002-02-14 Aperture masks for circuit fabrication
PCT/US2003/001751 WO2003069014A1 (en) 2002-02-14 2003-01-21 Aperture masks for circuit fabrication

Publications (2)

Publication Number Publication Date
JP2005518478A true JP2005518478A (ja) 2005-06-23
JP2005518478A5 JP2005518478A5 (enExample) 2006-03-09

Family

ID=27660170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003568120A Pending JP2005518478A (ja) 2002-02-14 2003-01-21 回路製作用アパーチャマスク

Country Status (9)

Country Link
US (2) US20030151118A1 (enExample)
EP (2) EP2060654A1 (enExample)
JP (1) JP2005518478A (enExample)
KR (1) KR20040091037A (enExample)
CN (1) CN1633515B (enExample)
AT (1) ATE431440T1 (enExample)
AU (1) AU2003209312A1 (enExample)
DE (1) DE60327597D1 (enExample)
WO (1) WO2003069014A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007043116A (ja) * 2005-06-30 2007-02-15 Semiconductor Energy Lab Co Ltd 半導体装置
JP2016212567A (ja) * 2015-05-01 2016-12-15 株式会社ブイ・テクノロジー タッチパネル製造方法、タッチパネルのガラス基板及びタッチパネル製造用マスク
JP2022175925A (ja) * 2021-05-14 2022-11-25 キヤノン株式会社 蒸着マスク、及び、有機電子デバイスの製造方法

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EP1328982B1 (en) 2000-03-24 2005-07-20 Cymbet Corporation Device enclosures and devices with integrated battery
US6897164B2 (en) * 2002-02-14 2005-05-24 3M Innovative Properties Company Aperture masks for circuit fabrication
US6821348B2 (en) * 2002-02-14 2004-11-23 3M Innovative Properties Company In-line deposition processes for circuit fabrication
US6667215B2 (en) 2002-05-02 2003-12-23 3M Innovative Properties Method of making transistors
US7088145B2 (en) * 2002-12-23 2006-08-08 3M Innovative Properties Company AC powered logic circuitry
US7294209B2 (en) 2003-01-02 2007-11-13 Cymbet Corporation Apparatus and method for depositing material onto a substrate using a roll-to-roll mask
US7603144B2 (en) 2003-01-02 2009-10-13 Cymbet Corporation Active wireless tagging system on peel and stick substrate
US6906436B2 (en) 2003-01-02 2005-06-14 Cymbet Corporation Solid state activity-activated battery device and method
US7279777B2 (en) * 2003-05-08 2007-10-09 3M Innovative Properties Company Organic polymers, laminates, and capacitors
US7098525B2 (en) * 2003-05-08 2006-08-29 3M Innovative Properties Company Organic polymers, electronic devices, and methods
JP2005042133A (ja) * 2003-07-22 2005-02-17 Seiko Epson Corp 蒸着マスク及びその製造方法、表示装置及びその製造方法、表示装置を備えた電子機器
US20070178710A1 (en) * 2003-08-18 2007-08-02 3M Innovative Properties Company Method for sealing thin film transistors
US20050079418A1 (en) * 2003-10-14 2005-04-14 3M Innovative Properties Company In-line deposition processes for thin film battery fabrication
US7211351B2 (en) 2003-10-16 2007-05-01 Cymbet Corporation Lithium/air batteries with LiPON as separator and protective barrier and method
US20050130422A1 (en) * 2003-12-12 2005-06-16 3M Innovative Properties Company Method for patterning films
US7078937B2 (en) * 2003-12-17 2006-07-18 3M Innovative Properties Company Logic circuitry powered by partially rectified ac waveform
US6882897B1 (en) * 2004-01-05 2005-04-19 Dennis S. Fernandez Reconfigurable garment definition and production method
US7494742B2 (en) 2004-01-06 2009-02-24 Cymbet Corporation Layered barrier structure having one or more definable layers and method
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US7151276B2 (en) * 2005-03-09 2006-12-19 3M Innovative Properties Company Semiconductors containing perfluoroether acyl oligothiophene compounds
US7211679B2 (en) * 2005-03-09 2007-05-01 3M Innovative Properties Company Perfluoroether acyl oligothiophene compounds
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US7319153B2 (en) * 2005-07-29 2008-01-15 3M Innovative Properties Company 6,13-Bis(thienyl)pentacene compounds
US7615501B2 (en) * 2005-08-11 2009-11-10 3M Innovative Properties Company Method for making a thin film layer
US20070137568A1 (en) * 2005-12-16 2007-06-21 Schreiber Brian E Reciprocating aperture mask system and method
US7763114B2 (en) * 2005-12-28 2010-07-27 3M Innovative Properties Company Rotatable aperture mask assembly and deposition system
KR100687761B1 (ko) * 2006-03-06 2007-02-27 한국전자통신연구원 대량생산을 위한 분자 전자 소자 제조용 소자 홀더 및 이를이용한 분자 전자 소자의 제조 방법
US7608679B2 (en) * 2006-03-31 2009-10-27 3M Innovative Properties Company Acene-thiophene copolymers
US7667230B2 (en) * 2006-03-31 2010-02-23 3M Innovative Properties Company Electronic devices containing acene-thiophene copolymers
US7495251B2 (en) * 2006-04-21 2009-02-24 3M Innovative Properties Company Electronic devices containing acene-thiophene copolymers with silylethynyl groups
US7666968B2 (en) * 2006-04-21 2010-02-23 3M Innovative Properties Company Acene-thiophene copolymers with silethynly groups
TWI325744B (en) * 2006-08-28 2010-06-01 Ind Tech Res Inst Electronic devices integrated on a single substrate and method for fabricating the same
US7655127B2 (en) * 2006-11-27 2010-02-02 3M Innovative Properties Company Method of fabricating thin film transistor
US20080121877A1 (en) * 2006-11-27 2008-05-29 3M Innovative Properties Company Thin film transistor with enhanced stability
US20090001356A1 (en) * 2007-06-29 2009-01-01 3M Innovative Properties Company Electronic devices having a solution deposited gate dielectric
US7879688B2 (en) * 2007-06-29 2011-02-01 3M Innovative Properties Company Methods for making electronic devices with a solution deposited gate dielectric
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JP5724342B2 (ja) * 2009-12-10 2015-05-27 大日本印刷株式会社 パターン配置方法並びにシリコンウェハ及び半導体デバイスの製造方法
KR101693578B1 (ko) * 2011-03-24 2017-01-10 삼성디스플레이 주식회사 증착 마스크
WO2012158709A1 (en) 2011-05-16 2012-11-22 The Board Of Trustees Of The University Of Illinois Thermally managed led arrays assembled by printing
US11527774B2 (en) 2011-06-29 2022-12-13 Space Charge, LLC Electrochemical energy storage devices
US10601074B2 (en) 2011-06-29 2020-03-24 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
US11996517B2 (en) 2011-06-29 2024-05-28 Space Charge, LLC Electrochemical energy storage devices
US9853325B2 (en) 2011-06-29 2017-12-26 Space Charge, LLC Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices
US10658705B2 (en) 2018-03-07 2020-05-19 Space Charge, LLC Thin-film solid-state energy storage devices
TWI480398B (zh) * 2012-01-30 2015-04-11 Innocom Tech Shenzhen Co Ltd 陰影罩幕及其補償設計方法
CN103225059A (zh) * 2012-01-30 2013-07-31 群康科技(深圳)有限公司 阴影掩膜及其补偿设计方法
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CN104347789B (zh) * 2013-08-05 2017-08-25 国家纳米科学中心 垂直型薄膜热电器件的热电臂阵列的制作方法和制作装置
KR20180061217A (ko) 2015-09-28 2018-06-07 쓰리엠 이노베이티브 프로퍼티즈 캄파니 절단가능한 가교결합제를 포함하는 패턴화된 필름 물품 및 방법
CN105353589B (zh) * 2015-12-01 2018-02-23 广州杰赛科技股份有限公司 一种高效pcb二次曝光方法
CN106435473A (zh) * 2016-11-11 2017-02-22 京东方科技集团股份有限公司 掩模板及其制作方法、有机发光二极管显示器的制作方法
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007043116A (ja) * 2005-06-30 2007-02-15 Semiconductor Energy Lab Co Ltd 半導体装置
JP2016212567A (ja) * 2015-05-01 2016-12-15 株式会社ブイ・テクノロジー タッチパネル製造方法、タッチパネルのガラス基板及びタッチパネル製造用マスク
JP2022175925A (ja) * 2021-05-14 2022-11-25 キヤノン株式会社 蒸着マスク、及び、有機電子デバイスの製造方法

Also Published As

Publication number Publication date
EP1474542A1 (en) 2004-11-10
KR20040091037A (ko) 2004-10-27
ATE431440T1 (de) 2009-05-15
CN1633515A (zh) 2005-06-29
AU2003209312A1 (en) 2003-09-04
CN1633515B (zh) 2010-04-28
EP2060654A1 (en) 2009-05-20
US20030151118A1 (en) 2003-08-14
US20060057857A1 (en) 2006-03-16
EP1474542B1 (en) 2009-05-13
WO2003069014A1 (en) 2003-08-21
DE60327597D1 (de) 2009-06-25

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