KR20040090425A - 반도체 집적회로 - Google Patents
반도체 집적회로 Download PDFInfo
- Publication number
- KR20040090425A KR20040090425A KR1020040024833A KR20040024833A KR20040090425A KR 20040090425 A KR20040090425 A KR 20040090425A KR 1020040024833 A KR1020040024833 A KR 1020040024833A KR 20040024833 A KR20040024833 A KR 20040024833A KR 20040090425 A KR20040090425 A KR 20040090425A
- Authority
- KR
- South Korea
- Prior art keywords
- bit line
- memory
- read
- memory array
- sense amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 36
- 230000015654 memory Effects 0.000 claims abstract description 318
- 238000003491 array Methods 0.000 claims abstract description 62
- 238000000034 method Methods 0.000 claims description 30
- 238000012545 processing Methods 0.000 claims description 19
- 238000000926 separation method Methods 0.000 claims description 18
- 230000008859 change Effects 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 9
- 230000004044 response Effects 0.000 claims description 8
- 238000002955 isolation Methods 0.000 claims description 6
- 238000013507 mapping Methods 0.000 claims description 6
- 238000012795 verification Methods 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 29
- 230000004913 activation Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 101100113692 Caenorhabditis elegans clk-2 gene Proteins 0.000 description 2
- 101100328887 Caenorhabditis elegans col-34 gene Proteins 0.000 description 2
- 241000801924 Sena Species 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000009849 deactivation Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/005—Transfer gates, i.e. gates coupling the sense amplifier output to data lines, I/O lines or global bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
- G11C2216/22—Nonvolatile memory in which reading can be carried out from one memory bank or array whilst a word or sector in another bank or array is being erased or programmed simultaneously
Landscapes
- Read Only Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003108604A JP4331966B2 (ja) | 2003-04-14 | 2003-04-14 | 半導体集積回路 |
| JPJP-P-2003-00108604 | 2003-04-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20040090425A true KR20040090425A (ko) | 2004-10-22 |
Family
ID=33128070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020040024833A Withdrawn KR20040090425A (ko) | 2003-04-14 | 2004-04-12 | 반도체 집적회로 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US7190615B2 (https=) |
| JP (1) | JP4331966B2 (https=) |
| KR (1) | KR20040090425A (https=) |
| TW (1) | TW200504757A (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9190123B2 (en) | 2013-09-24 | 2015-11-17 | SK Hynix Inc. | Semiconductor devices and semiconductor systems including the same |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW546840B (en) | 2001-07-27 | 2003-08-11 | Hitachi Ltd | Non-volatile semiconductor memory device |
| KR100587702B1 (ko) * | 2004-07-09 | 2006-06-08 | 삼성전자주식회사 | 피크 전류의 감소 특성을 갖는 상변화 메모리 장치 및그에 따른 데이터 라이팅 방법 |
| WO2006018862A1 (ja) * | 2004-08-16 | 2006-02-23 | Fujitsu Limited | 不揮発性半導体メモリ |
| JP2007133927A (ja) * | 2005-11-08 | 2007-05-31 | Toshiba Corp | 半導体記憶装置及びその制御方法 |
| KR100735612B1 (ko) | 2005-12-22 | 2007-07-04 | 삼성전자주식회사 | 멀티패쓰 억세스블 반도체 메모리 장치 |
| JP2007200512A (ja) | 2006-01-30 | 2007-08-09 | Renesas Technology Corp | 半導体記憶装置 |
| US8010867B2 (en) * | 2006-10-12 | 2011-08-30 | Renesas Electronics Corporation | Error correction code decoding device |
| KR100914265B1 (ko) * | 2007-05-10 | 2009-08-27 | 삼성전자주식회사 | 비휘발성 메모리 장치, 그것을 포함한 메모리 시스템 및그것의 읽기 방법 |
| US7643367B2 (en) * | 2007-08-15 | 2010-01-05 | Oki Semiconductor Co., Ltd. | Semiconductor memory device |
| US7800951B2 (en) | 2007-08-20 | 2010-09-21 | Marvell World Trade Ltd. | Threshold voltage digitizer for array of programmable threshold transistors |
| JP2009123298A (ja) | 2007-11-16 | 2009-06-04 | Renesas Technology Corp | 半導体集積回路装置 |
| JP2009146499A (ja) * | 2007-12-13 | 2009-07-02 | Toshiba Corp | 不揮発性メモリカード |
| JP4907563B2 (ja) * | 2008-01-16 | 2012-03-28 | パナソニック株式会社 | 半導体記憶装置 |
| KR101452957B1 (ko) | 2008-02-21 | 2014-10-21 | 삼성전자주식회사 | 리드 와일 라이트 동작시 커플링 노이즈를 방지할 수 있는상 변화 메모리 장치 |
| JP5777845B2 (ja) * | 2008-06-26 | 2015-09-09 | スパンション エルエルシー | 不揮発性記憶装置及び不揮発性記憶装置からのデータ読み出し方法 |
| US8228714B2 (en) * | 2008-09-09 | 2012-07-24 | Qualcomm Incorporated | Memory device for resistance-based memory applications |
| US8259461B2 (en) | 2008-11-25 | 2012-09-04 | Micron Technology, Inc. | Apparatus for bypassing faulty connections |
| US8645617B2 (en) * | 2008-12-09 | 2014-02-04 | Rambus Inc. | Memory device for concurrent and pipelined memory operations |
| JP5197406B2 (ja) * | 2009-01-27 | 2013-05-15 | 株式会社東芝 | 半導体記憶装置 |
| US7936625B2 (en) * | 2009-03-24 | 2011-05-03 | Seagate Technology Llc | Pipeline sensing using voltage storage elements to read non-volatile memory cells |
| US8098507B2 (en) * | 2009-07-13 | 2012-01-17 | Seagate Technology Llc | Hierarchical cross-point array of non-volatile memory |
| US8363450B2 (en) | 2009-07-13 | 2013-01-29 | Seagate Technology Llc | Hierarchical cross-point array of non-volatile memory |
| JP5528869B2 (ja) * | 2010-03-23 | 2014-06-25 | スパンション エルエルシー | 不揮発性半導体記憶装置及びその読み出し方法 |
| JP5343916B2 (ja) | 2010-04-16 | 2013-11-13 | 富士通セミコンダクター株式会社 | 半導体メモリ |
| JP5972700B2 (ja) * | 2012-07-31 | 2016-08-17 | ルネサスエレクトロニクス株式会社 | メモリ装置 |
| US9431111B2 (en) * | 2014-07-08 | 2016-08-30 | Ememory Technology Inc. | One time programming memory cell, array structure and operating method thereof |
| JP6422273B2 (ja) * | 2014-09-03 | 2018-11-14 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US9653174B2 (en) | 2015-03-10 | 2017-05-16 | Kabushiki Kaisha Toshiba | Semiconductor storage device |
| KR102671075B1 (ko) * | 2017-01-13 | 2024-05-30 | 에스케이하이닉스 주식회사 | 반도체장치 |
| JP6846321B2 (ja) | 2017-09-21 | 2021-03-24 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置、及び半導体記憶装置の制御方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3579205B2 (ja) * | 1996-08-06 | 2004-10-20 | 株式会社ルネサステクノロジ | 半導体記憶装置、半導体装置、データ処理装置及びコンピュータシステム |
| JP3602939B2 (ja) * | 1996-11-19 | 2004-12-15 | 松下電器産業株式会社 | 半導体記憶装置 |
| JP3990485B2 (ja) * | 1997-12-26 | 2007-10-10 | 株式会社ルネサステクノロジ | 半導体不揮発性記憶装置 |
| JP2000048586A (ja) * | 1998-07-30 | 2000-02-18 | Fujitsu Ltd | 不揮発性半導体記憶装置 |
| JP2000339983A (ja) | 1999-05-31 | 2000-12-08 | Mitsubishi Electric Corp | 半導体集積回路装置 |
| US6275407B1 (en) * | 1999-06-29 | 2001-08-14 | Kabushiki Kaisha Toshiba | Semiconductor memory device having sense and data lines for use to read and write operations |
| JP2001084776A (ja) * | 1999-09-17 | 2001-03-30 | Toshiba Corp | 半導体記憶装置 |
| JP5034133B2 (ja) * | 2000-02-29 | 2012-09-26 | 富士通セミコンダクター株式会社 | 半導体記憶装置 |
| US6704828B1 (en) * | 2000-08-31 | 2004-03-09 | Micron Technology, Inc. | System and method for implementing data pre-fetch having reduced data lines and/or higher data rates |
| JP2002133873A (ja) * | 2000-10-23 | 2002-05-10 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
| US6760243B2 (en) * | 2002-03-19 | 2004-07-06 | Broadcom Corporation | Distributed, highly configurable modular predecoding |
| JP2004213829A (ja) * | 2003-01-08 | 2004-07-29 | Renesas Technology Corp | 半導体記憶装置 |
| US7158429B1 (en) * | 2003-03-26 | 2007-01-02 | Cypress Semiconductor Corp. | System for read path acceleration |
| JP2005004835A (ja) * | 2003-06-10 | 2005-01-06 | Toshiba Corp | 半導体記憶装置 |
-
2003
- 2003-04-14 JP JP2003108604A patent/JP4331966B2/ja not_active Expired - Lifetime
-
2004
- 2004-03-29 US US10/810,672 patent/US7190615B2/en not_active Expired - Lifetime
- 2004-04-09 TW TW093109996A patent/TW200504757A/zh not_active IP Right Cessation
- 2004-04-12 KR KR1020040024833A patent/KR20040090425A/ko not_active Withdrawn
-
2007
- 2007-03-02 US US11/713,039 patent/US7342826B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9190123B2 (en) | 2013-09-24 | 2015-11-17 | SK Hynix Inc. | Semiconductor devices and semiconductor systems including the same |
Also Published As
| Publication number | Publication date |
|---|---|
| US7190615B2 (en) | 2007-03-13 |
| JP4331966B2 (ja) | 2009-09-16 |
| US20040202020A1 (en) | 2004-10-14 |
| TWI360819B (https=) | 2012-03-21 |
| US20070153618A1 (en) | 2007-07-05 |
| TW200504757A (en) | 2005-02-01 |
| JP2004318941A (ja) | 2004-11-11 |
| US7342826B2 (en) | 2008-03-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20040412 |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |