KR20040038772A - 반도체 장치의 제조 방법 - Google Patents
반도체 장치의 제조 방법 Download PDFInfo
- Publication number
- KR20040038772A KR20040038772A KR1020030075770A KR20030075770A KR20040038772A KR 20040038772 A KR20040038772 A KR 20040038772A KR 1020030075770 A KR1020030075770 A KR 1020030075770A KR 20030075770 A KR20030075770 A KR 20030075770A KR 20040038772 A KR20040038772 A KR 20040038772A
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- South Korea
- Prior art keywords
- film
- region
- conductive film
- gate insulating
- semiconductor device
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 24
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 33
- 230000006870 function Effects 0.000 claims description 32
- 239000012535 impurity Substances 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 23
- 229910052814 silicon oxide Inorganic materials 0.000 description 23
- 229910052581 Si3N4 Inorganic materials 0.000 description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 18
- 229910021332 silicide Inorganic materials 0.000 description 16
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 16
- 239000011229 interlayer Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 11
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 10
- 229910021342 tungsten silicide Inorganic materials 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 241000742170 Mosia Species 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910015275 MoF 6 Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (11)
- n형 MIS 트랜지스터 및 p형 MIS 트랜지스터를 포함한 반도체 장치의 제조 방법에 있어서,n형 MIS 트랜지스터가 형성되는 제1 영역에 제1 게이트 절연막을 형성하는 공정과,상기 제1 영역으로서 상기 제1 게이트 절연막 상에, 실리콘과, 텅스텐 및 몰리브덴 중에서 선택된 금속 원소와, 인 및 비소 중에서 선택된 불순물 원소를 함유한 제1 도전막을 퇴적하는 공정과,p형 MIS 트랜지스터가 형성되는 제2 영역에 제2 게이트 절연막을 형성하는 공정과,상기 제2 영역으로서 상기 제2 게이트 절연막 상에, 상기 제1 도전막보다도 높은 일함수를 갖는 제2 도전막을 형성하는 공정을 포함하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제1항에 있어서,상기 제1 영역에 제1 도전막을 퇴적하는 공정은 상기 제2 영역에 상기 제1 도전막을 퇴적하는 공정을 포함하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제2항에 있어서,상기 제2 영역에 제2 도전막을 형성하는 공정은, 상기 제2 영역에 퇴적된 상기 제1 도전막 상에 금속막을 형성하는 공정과, 열 처리에 의해 상기 제1 도전막과 상기 금속막을 반응시켜서 상기 제1 도전막에 함유된 실리콘의 농도를 감소시키는 공정을 포함하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제3항에 있어서,상기 금속막은 Pt, Pd, Ni, Co, W, Mo, Sb 및 Bi 중 적어도 하나를 함유하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제2항에 있어서,상기 제2 영역에 제2 도전막을 형성하는 공정은, 상기 제2 영역에 퇴적된 제1 도전막을 제거하는 공정과, 상기 제1 도전막이 제거된 영역에 상기 제2 도전막을 매립하는 공정을 포함하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제5항에 있어서,상기 제2 도전막은 금속막인 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제1항 또는 제2항에 있어서,상기 제1 도전막은 실리콘의 소스, 상기 금속 원소의 소스, 및 상기 불순물 원소의 소스를 이용한 화학적 기상 성장법에 의해 퇴적되는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제1항 또는 제2항에 있어서,상기 n형 MIS 트랜지스터는 메모리 회로용으로 이용되며, 상기 p형 MIS 트랜지스터는 로직 회로용으로 이용되는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제1항 또는 제2항에 있어서,상기 제2 게이트 절연막은 상기 제1 게이트 절연막과, 막 두께 및 유전율 중 적어도 한쪽이 다른 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제1항 또는 제2항에 있어서,상기 제1 도전막에 함유된 상기 불순물 원소의 농도는 1×1020/cm3보다도 높은 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제1항 또는 제2항에 있어서,상기 제1 도전막에 함유된 상기 불순물 원소의 농도는 1×1021/cm3보다도 높은 것을 특징으로 하는 반도체 장치의 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2002-00316349 | 2002-10-30 | ||
JP2002316349A JP2004152995A (ja) | 2002-10-30 | 2002-10-30 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040038772A true KR20040038772A (ko) | 2004-05-08 |
KR100550509B1 KR100550509B1 (ko) | 2006-02-13 |
Family
ID=32105392
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020030075770A KR100550509B1 (ko) | 2002-10-30 | 2003-10-29 | 반도체 장치의 제조 방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6727129B1 (ko) |
JP (1) | JP2004152995A (ko) |
KR (1) | KR100550509B1 (ko) |
CN (1) | CN1274018C (ko) |
TW (1) | TWI241620B (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101347943B1 (ko) * | 2011-12-20 | 2014-01-07 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 금속 게이트를 갖는 cmos 장치와, 이런 장치를 형성하기 위한 방법 |
US10109986B2 (en) | 2016-11-03 | 2018-10-23 | Federal-Mogul Ignition Gmbh | Prechamber spark plug for a gas-powered internal combustion engine, and method for manufacturing same |
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JP2003257178A (ja) * | 2002-03-06 | 2003-09-12 | Matsushita Electric Ind Co Ltd | 半導体メモリ装置 |
JP4091530B2 (ja) * | 2003-07-25 | 2008-05-28 | 株式会社東芝 | 半導体装置の製造方法 |
JP4011024B2 (ja) | 2004-01-30 | 2007-11-21 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
FR2867323B1 (fr) * | 2004-03-05 | 2006-10-20 | Valeo Climatisation | Systeme de commande de vitesse d'un moteur de groupe moto-ventilateur, notamment pour une installation de chauffage et/ou de climatisation de vehicule automobile |
CN100452357C (zh) * | 2004-06-23 | 2009-01-14 | 日本电气株式会社 | 半导体装置及其制造方法 |
JP2006013270A (ja) * | 2004-06-29 | 2006-01-12 | Renesas Technology Corp | 半導体装置およびその製造方法 |
US7060568B2 (en) * | 2004-06-30 | 2006-06-13 | Intel Corporation | Using different gate dielectrics with NMOS and PMOS transistors of a complementary metal oxide semiconductor integrated circuit |
US7138323B2 (en) * | 2004-07-28 | 2006-11-21 | Intel Corporation | Planarizing a semiconductor structure to form replacement metal gates |
JP4163164B2 (ja) | 2004-09-07 | 2008-10-08 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
US7390709B2 (en) * | 2004-09-08 | 2008-06-24 | Intel Corporation | Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode |
JP2006108602A (ja) * | 2004-09-10 | 2006-04-20 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2007036148A (ja) * | 2005-07-29 | 2007-02-08 | Toshiba Corp | 半導体装置製造方法 |
JP2007080995A (ja) * | 2005-09-13 | 2007-03-29 | Toshiba Corp | 半導体装置 |
US7335562B2 (en) * | 2005-10-24 | 2008-02-26 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
JP2007123527A (ja) | 2005-10-27 | 2007-05-17 | Toshiba Corp | 半導体装置の製造方法 |
US7786537B2 (en) * | 2005-11-14 | 2010-08-31 | Nec Corporation | Semiconductor device and method for manufacturing same |
KR100729366B1 (ko) * | 2006-05-19 | 2007-06-15 | 삼성전자주식회사 | 반도체 장치 및 그 형성 방법 |
US7812414B2 (en) * | 2007-01-23 | 2010-10-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Hybrid process for forming metal gates |
US8685811B2 (en) * | 2008-01-14 | 2014-04-01 | United Microelectronics Corp. | Method for manufacturing a CMOS device having dual metal gate |
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JP5011196B2 (ja) * | 2008-04-14 | 2012-08-29 | 株式会社東芝 | 半導体装置およびその製造方法 |
US8058119B2 (en) | 2008-08-27 | 2011-11-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device scheme of HKMG gate-last process |
CN103855014B (zh) * | 2012-11-30 | 2017-10-20 | 中国科学院微电子研究所 | P型mosfet及其制造方法 |
US9508716B2 (en) * | 2013-03-14 | 2016-11-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of manufacturing a semiconductor device |
US11043493B2 (en) * | 2018-10-12 | 2021-06-22 | International Business Machines Corporation | Stacked nanosheet complementary metal oxide semiconductor field effect transistor devices |
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2002
- 2002-10-30 JP JP2002316349A patent/JP2004152995A/ja active Pending
-
2003
- 2003-03-19 US US10/390,617 patent/US6727129B1/en not_active Expired - Lifetime
- 2003-10-27 TW TW092129763A patent/TWI241620B/zh not_active IP Right Cessation
- 2003-10-28 CN CNB2003101030044A patent/CN1274018C/zh not_active Expired - Fee Related
- 2003-10-29 KR KR1020030075770A patent/KR100550509B1/ko active IP Right Grant
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Publication number | Priority date | Publication date | Assignee | Title |
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KR101347943B1 (ko) * | 2011-12-20 | 2014-01-07 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 금속 게이트를 갖는 cmos 장치와, 이런 장치를 형성하기 위한 방법 |
US10109986B2 (en) | 2016-11-03 | 2018-10-23 | Federal-Mogul Ignition Gmbh | Prechamber spark plug for a gas-powered internal combustion engine, and method for manufacturing same |
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KR100550509B1 (ko) | 2006-02-13 |
JP2004152995A (ja) | 2004-05-27 |
TW200419633A (en) | 2004-10-01 |
US6727129B1 (en) | 2004-04-27 |
US20040087070A1 (en) | 2004-05-06 |
TWI241620B (en) | 2005-10-11 |
CN1274018C (zh) | 2006-09-06 |
CN1499612A (zh) | 2004-05-26 |
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