JP2005203773A - 金属コンタクト構造およびその製造方法 - Google Patents
金属コンタクト構造およびその製造方法 Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 161
- 239000002184 metal Substances 0.000 title claims abstract description 161
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000010410 layer Substances 0.000 claims abstract description 134
- 239000011229 interlayer Substances 0.000 claims abstract description 36
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 34
- 229920005591 polysilicon Polymers 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 29
- 229910001092 metal group alloy Inorganic materials 0.000 claims abstract description 16
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 16
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 16
- 150000004767 nitrides Chemical class 0.000 claims abstract description 16
- 230000004888 barrier function Effects 0.000 claims abstract description 5
- 239000004065 semiconductor Substances 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 12
- 229910021332 silicide Inorganic materials 0.000 claims description 11
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000012790 adhesive layer Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910000314 transition metal oxide Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 12
- 230000008569 process Effects 0.000 description 14
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 8
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 8
- 229910052691 Erbium Inorganic materials 0.000 description 7
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 7
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 7
- 229910052726 zirconium Inorganic materials 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 5
- 229910017052 cobalt Inorganic materials 0.000 description 5
- 239000010941 cobalt Substances 0.000 description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 5
- 229910052741 iridium Inorganic materials 0.000 description 5
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229910052758 niobium Inorganic materials 0.000 description 5
- 239000010955 niobium Substances 0.000 description 5
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 5
- 229910052763 palladium Inorganic materials 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 229910052707 ruthenium Inorganic materials 0.000 description 5
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 5
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823871—Complementary field-effect transistors, e.g. CMOS interconnection or wiring or contact manufacturing related aspects
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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Abstract
【解決手段】 金属コンタクトは、層間誘電体を貫通して、トランジスタの金属ゲート電極112などの金属構造と電性接続される。導電層140は、金属層150と金属ゲート112との間に提供される。導電層は、一層以上のバリヤ層、接着層またはエッチング停止層を提供する。導電層は、元素金属、金属合金、金属窒化物、金属酸化物またはそれらの組合せからなる。また、導電層はポリシリコンから形成してもよい。
【選択図】 図1E
Description
図1Aから図1Eは、本発明の第1実施形態による各ステップを示す半導体ウェハー100の部分断面図である。ステップは図1Aから始まり、図1Aにおいて、半導体ウェハー100は、その上にトランジスタ104が設けられた基板102を備える。基板102はシリコン基板であることが好ましく、それは一般にアンドープであるか低濃度にドーピングされている。あるいは、替わりにゲルマニウム、シリコンゲルマニウム、傾斜シリコンゲルマニウム、半導体−絶縁体(semiconductor-on-insulator)、炭素、クォーツ、サファイヤ、ガラスまたは酸化物などのその他の材料を基板102に使用することもできる。
図2Aから図2Fは、本発明の第2実施形態による各ステップの半導体ウェハー200を示す部分断面図である。ステップは図2Aから始まり、その上にトランジスタを備えた半導体ウェハー200を準備する。図中の符号は、半導体ウェハー200上に形成されていた第2の層間誘電体層124以外、図1Aで示した構成要素を参照すること。半導体ウェハー200は、従来技術による標準的な工程により形成される。
122 第1の層間誘電体層、124 第2の層間誘電体層、130 コンタクトホール、140 第1の導電層、150 第2の金属層、200 半導体ウェハー、230 第1の導電層、240 第2の層間誘電体層、250 コンタクトホール、260 第2の金属層
Claims (19)
- 金属ゲート電極を有するトランジスタが形成されている半導体基板と、
前記金属ゲート電極上に設けられている層間誘電体層と、
前記層間誘電体層を貫通して前記金属ゲート電極まで達するように形成されたコンタクトホールとを備える半導体装置であって、
前記コンタクトホールは第1の金属層で充填されて、前記第1の金属層と前記金属ゲート電極との間に導電層が設けられることを特徴とする半導体装置。 - 最低フィーチャサイズは、65nm以下であることを特徴とする請求項1記載の半導体装置。
- 前記金属ゲート電極は、元素金属、金属合金、金属窒化物、金属酸化物およびそれらの組合せからなるグループから選択されることを特徴とする請求項1記載の半導体装置。
- 前記導電層は、ポリシリコン、元素金属、金属合金、金属ケイ化物、金属窒化物、金属酸化物またはそれらの組合せからなることを特徴とする請求項1記載の半導体装置。
- 前記金属ゲート電極と前記半導体基板との間にゲート誘電体層が設けられていることを特徴とする請求項1記載の半導体装置。
- 前記ゲート誘電体層は、等価酸化物の厚みが50Å以下であることを特徴とする請求項5記載の半導体装置。
- 前記ゲート誘電体層は、ケイ素含有材料、酸素含有材料、窒素含有材料または50以下の誘電率を有する遷移金属酸化物であることを特徴とする請求項5記載の半導体装置。
- 前記導電層は、バリヤ層または接着層であることを特徴とする請求項1記載の半導体装置。
- 前記導電層は、厚さが5Å以上500Å以下であることを特徴とする請求項1記載の半導体装置。
- 前記第1の金属層は、元素金属、金属合金、金属ケイ化物、金属窒化物、金属酸化物またはそれらの組合せからなることを特徴とする請求項1記載の半導体装置。
- 基板を準備するステップと、
前記基板上にゲート誘電体を形成するステップと、
前記ゲート誘電体上に金属ゲート電極を形成するステップと、
前記金属ゲート電極に隣接する前記基板上にソース/ドレイン領域を形成するステップと、
前記金属ゲート電極上に層間誘電体を形成するステップと、
少なくとも一部が前記金属ゲート電極上に位置するように前記層間誘電体中にコンタクトホールを形成するステップと、
前記金属ゲート電極と電性接続するように、前記コンタクトホール中に導電層を形成するステップと、
前記コンタクトホール中の前記導電層上に金属コンタクトを形成するステップと、
を含むことを特徴とする半導体装置の製造方法。 - 最低フィーチャサイズが、65nm以下であることを特徴とする請求項11記載の半導体装置の製造方法。
- 前記金属ゲート電極は、元素金属、金属合金、金属窒化物、金属酸化物およびそれらの組合せからなるグループから選択することを特徴とする請求項11記載の半導体装置の製造方法。
- 前記導電層は、ポリシリコン、元素金属、金属合金、金属ケイ化物、金属窒化物、金属酸化物またはそれらの組合せからなることを特徴とする請求項11記載の半導体装置の製造方法。
- 前記ゲート誘電体層は、等価酸化物の厚みが50Å以下であることを特徴とする請求項11記載の半導体装置の製造方法。
- 前記ゲート誘電体層は、ケイ素含有材料、酸素含有材料、窒素含有材料または50以下の誘電率を有する遷移金属酸化物であることを特徴とする請求項11記載の半導体装置の製造方法。
- 前記導電層は、バリヤ層または接着層であることを特徴とする請求項11記載の半導体装置の製造方法。
- 前記導電層は、厚さが5Å以上500Å以下であることを特徴とする請求項11記載の半導体装置の製造方法。
- 前記金属コンタクトは、元素金属、金属合金、金属ケイ化物、金属窒化物、金属酸化物またはそれらの組合せからなることを特徴とする請求項11記載の半導体装置の製造方法。
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US53530304P | 2004-01-09 | 2004-01-09 | |
US10/835,100 US20050151166A1 (en) | 2004-01-09 | 2004-04-29 | Metal contact structure and method of manufacture |
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JP2005203773A true JP2005203773A (ja) | 2005-07-28 |
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JP2005000626A Pending JP2005203773A (ja) | 2004-01-09 | 2005-01-05 | 金属コンタクト構造およびその製造方法 |
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US (1) | US20050151166A1 (ja) |
JP (1) | JP2005203773A (ja) |
CN (1) | CN100376036C (ja) |
SG (1) | SG113555A1 (ja) |
TW (1) | TW200524070A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010519724A (ja) * | 2007-01-04 | 2010-06-03 | フリースケール セミコンダクター インコーポレイテッド | 金属電極を有する半導体素子の形成、及び半導体素子の構造 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7592645B2 (en) * | 2004-12-08 | 2009-09-22 | Canon Kabushiki Kaisha | Photoelectric conversion device and method for producing photoelectric conversion device |
US7968394B2 (en) | 2005-12-16 | 2011-06-28 | Freescale Semiconductor, Inc. | Transistor with immersed contacts and methods of forming thereof |
KR100770012B1 (ko) * | 2006-11-29 | 2007-10-25 | 한국전자통신연구원 | 쇼트키 장벽 관통 트랜지스터 및 그 제조방법 |
US20090045458A1 (en) * | 2007-08-15 | 2009-02-19 | Advanced Micro Devices, Inc. | Mos transistors for thin soi integration and methods for fabricating the same |
US9337047B2 (en) * | 2007-09-17 | 2016-05-10 | Infineon Technologies Ag | Semiconductor device and method of making semiconductor device |
US8193081B2 (en) * | 2009-10-20 | 2012-06-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for metal gate formation with wider metal gate fill margin |
US8895327B1 (en) * | 2011-12-09 | 2014-11-25 | Suvolta, Inc. | Tipless transistors, short-tip transistors, and methods and circuits therefor |
CN103681291B (zh) * | 2012-09-12 | 2016-09-21 | 中芯国际集成电路制造(上海)有限公司 | 一种金属硅化物的形成方法 |
US10199230B2 (en) * | 2015-05-01 | 2019-02-05 | Applied Materials, Inc. | Methods for selective deposition of metal silicides via atomic layer deposition cycles |
CN105182625A (zh) * | 2015-09-28 | 2015-12-23 | 京东方科技集团股份有限公司 | 一种显示基板及其制作方法和显示装置 |
US9911821B2 (en) * | 2015-11-13 | 2018-03-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device structure and method for forming the same |
US10096550B2 (en) * | 2017-02-21 | 2018-10-09 | Raytheon Company | Nitride structure having gold-free contact and methods for forming such structures |
US11424185B2 (en) | 2019-12-30 | 2022-08-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6087706A (en) * | 1998-04-07 | 2000-07-11 | Advanced Micro Devices, Inc. | Compact transistor structure with adjacent trench isolation and source/drain regions implanted vertically into trench walls |
US6049114A (en) * | 1998-07-20 | 2000-04-11 | Motorola, Inc. | Semiconductor device having a metal containing layer overlying a gate dielectric |
TW439102B (en) * | 1998-12-02 | 2001-06-07 | Nippon Electric Co | Field effect transistor and method of manufacturing the same |
JP2001298192A (ja) * | 2000-04-13 | 2001-10-26 | Seiko Epson Corp | 半導体装置およびその製造方法 |
US6444512B1 (en) * | 2000-06-12 | 2002-09-03 | Motorola, Inc. | Dual metal gate transistors for CMOS process |
US6586809B2 (en) * | 2001-03-15 | 2003-07-01 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
US6573134B2 (en) * | 2001-03-27 | 2003-06-03 | Sharp Laboratories Of America, Inc. | Dual metal gate CMOS devices and method for making the same |
US6624043B2 (en) * | 2001-09-24 | 2003-09-23 | Sharp Laboratories Of America, Inc. | Metal gate CMOS and method of manufacturing the same |
US6534824B1 (en) * | 2002-02-20 | 2003-03-18 | International Business Machines Corporation | Self-aligned punch through stop for 6F2 rotated hybrid DRAM cell |
US20030211682A1 (en) * | 2002-05-10 | 2003-11-13 | Jenq Jason Jyh-Shyang | Method for fabricating a gate electrode |
US6656764B1 (en) * | 2002-05-15 | 2003-12-02 | Taiwan Semiconductor Manufacturing Company | Process for integration of a high dielectric constant gate insulator layer in a CMOS device |
US6794281B2 (en) * | 2002-05-20 | 2004-09-21 | Freescale Semiconductor, Inc. | Dual metal gate transistors for CMOS process |
US6921711B2 (en) * | 2003-09-09 | 2005-07-26 | International Business Machines Corporation | Method for forming metal replacement gate of high performance |
-
2004
- 2004-04-29 US US10/835,100 patent/US20050151166A1/en not_active Abandoned
-
2005
- 2005-01-05 JP JP2005000626A patent/JP2005203773A/ja active Pending
- 2005-01-07 SG SG200500055A patent/SG113555A1/en unknown
- 2005-01-07 TW TW094100561A patent/TW200524070A/zh unknown
- 2005-01-10 CN CNB2005100004003A patent/CN100376036C/zh active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010519724A (ja) * | 2007-01-04 | 2010-06-03 | フリースケール セミコンダクター インコーポレイテッド | 金属電極を有する半導体素子の形成、及び半導体素子の構造 |
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Publication number | Publication date |
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CN1649170A (zh) | 2005-08-03 |
SG113555A1 (en) | 2005-08-29 |
TW200524070A (en) | 2005-07-16 |
CN100376036C (zh) | 2008-03-19 |
US20050151166A1 (en) | 2005-07-14 |
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