KR20030021118A - 구동제어장치 - Google Patents
구동제어장치 Download PDFInfo
- Publication number
- KR20030021118A KR20030021118A KR1020020035370A KR20020035370A KR20030021118A KR 20030021118 A KR20030021118 A KR 20030021118A KR 1020020035370 A KR1020020035370 A KR 1020020035370A KR 20020035370 A KR20020035370 A KR 20020035370A KR 20030021118 A KR20030021118 A KR 20030021118A
- Authority
- KR
- South Korea
- Prior art keywords
- pulse
- input
- terminal
- switching element
- power switching
- Prior art date
Links
- 238000000034 method Methods 0.000 claims description 14
- 239000008186 active pharmaceutical agent Substances 0.000 description 24
- 238000006243 chemical reaction Methods 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/538—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a push-pull configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Inverter Devices (AREA)
- Electronic Switches (AREA)
Abstract
Description
Claims (3)
- 전력용 스위칭소자를 구동제어하기 위한 구동제어장치에 있어서,외부에서의 입력신호에 동기하여, 펄스를 2출력에 교대로 출력하고, 상기 2출력의 적어도 한쪽으로는, 상기 펄스로서, 서로의 시간 간격이 미리 설정된 2펄스로 이루어진 펄스열을 출력하는 펄스발생기와,상기 펄스발생기의 2출력의 출력신호를 각각 레벨 시프트하는 1조의 레벨 시프트회로와,상기 1조의 레벨 시프트회로의 출력신호의 한쪽에서 세트되고 다른쪽에서 리셋트되는 플립플롭회로를 구비한 것을 특징으로 하는 구동제어장치.
- 제 1항에 있어서,상기 펄스발생기가, 상기 2출력의 양쪽에, 상기 펄스로서, 서로의 시간 간격이 미리 설정된 2펄스로 이루어진 펄스열을 출력하는 것을 특징으로 하는 구동제어장치.
- 제 1항 또는 제 2항에 있어서,상기 1조의 레벨 시프트회로의 각각이, 서로 직렬접속된 저항소자와 스위칭소자를 구비한 것을 특징으로 하는 구동제어장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2001-00268613 | 2001-09-05 | ||
JP2001268613A JP4382312B2 (ja) | 2001-09-05 | 2001-09-05 | 駆動制御装置、電力変換装置、電力変換装置の制御方法、および電力変換装置の使用方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030021118A true KR20030021118A (ko) | 2003-03-12 |
KR100428987B1 KR100428987B1 (ko) | 2004-04-29 |
Family
ID=19094564
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2002-0035370A KR100428987B1 (ko) | 2001-09-05 | 2002-06-24 | 구동제어장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6538481B1 (ko) |
JP (1) | JP4382312B2 (ko) |
KR (1) | KR100428987B1 (ko) |
CN (1) | CN1232022C (ko) |
DE (1) | DE10235444B4 (ko) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7215170B1 (en) | 2003-09-16 | 2007-05-08 | Cypress Semiconductor Corp. | Low voltage logic circuit with set and/or reset functionality |
JP4349097B2 (ja) * | 2003-11-17 | 2009-10-21 | 株式会社豊田自動織機 | ドライブ回路 |
DE102004035604B3 (de) * | 2004-07-22 | 2005-08-11 | Infineon Technologies Ag | Verfahren zur Ansteuerung eines Halbleiterschaltelements in einer Halbbrücke und Schaltungsanordnung mit einer Halbbrücke |
CN1914786B (zh) * | 2004-08-26 | 2012-02-08 | 松下电器产业株式会社 | 变换器模块 |
KR101083093B1 (ko) * | 2004-09-03 | 2011-11-16 | 페어차일드코리아반도체 주식회사 | 게이트 드라이버 회로 |
JP2008516543A (ja) * | 2004-10-12 | 2008-05-15 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | レーザまたは変調器駆動用の低電圧高速出力段 |
CN100412754C (zh) * | 2004-12-17 | 2008-08-20 | 鸿富锦精密工业(深圳)有限公司 | 电源电压产生电路 |
US7236041B2 (en) * | 2005-08-01 | 2007-06-26 | Monolithic Power Systems, Inc. | Isolated gate driver circuit for power switching devices |
US7720170B2 (en) * | 2005-12-13 | 2010-05-18 | Awq Consulting Inc. | Low emission signal generator and distributor system |
JP2007243254A (ja) * | 2006-03-06 | 2007-09-20 | Matsushita Electric Ind Co Ltd | スイッチ素子駆動回路 |
JP4339872B2 (ja) * | 2006-05-25 | 2009-10-07 | 株式会社日立製作所 | 半導体素子駆動装置、電力変換装置、及びモータ駆動装置、並びに半導体素子駆動方法、電力変換方法、及びモータ駆動方法 |
JP5082574B2 (ja) * | 2007-05-07 | 2012-11-28 | 三菱電機株式会社 | 半導体装置 |
JP4531075B2 (ja) * | 2007-05-16 | 2010-08-25 | 株式会社日立製作所 | 半導体回路 |
JP5228383B2 (ja) * | 2007-07-02 | 2013-07-03 | セイコーエプソン株式会社 | ドライバ回路及びそれを備えた電動モータ |
FR2927738B1 (fr) * | 2008-02-19 | 2013-01-04 | Alstom Transport Sa | Dispositif et circuit de commande d'un composant electronique de puissance, procede de pilotage et allumeur associes. |
US7843237B2 (en) * | 2008-11-17 | 2010-11-30 | Infineon Technologies Austria Ag | Circuit arrangement for actuating a transistor |
US9252773B2 (en) * | 2010-01-26 | 2016-02-02 | Intersil Americas LLC | Application specific power controller configuration technique |
US8558583B2 (en) | 2010-04-12 | 2013-10-15 | Texas Instruments Incorporated | Slew detection for high voltage isolation region |
CN101924460B (zh) * | 2010-08-02 | 2012-08-15 | 西安新光明电子科技有限公司 | 一种可抑制噪声的电平移位电路 |
CN103222194B (zh) * | 2010-11-25 | 2016-01-27 | 富士电机株式会社 | 利用半导体衬底中的电阻的电平移动电路 |
CN103187856B (zh) * | 2011-12-31 | 2015-08-19 | 意法半导体研发(深圳)有限公司 | 一种高侧驱动电路及操作驱动电路的方法 |
JP5880225B2 (ja) * | 2012-04-02 | 2016-03-08 | 富士電機株式会社 | 半導体装置 |
JP2016115951A (ja) * | 2013-04-09 | 2016-06-23 | パナソニック株式会社 | モータ駆動装置およびそれを備えた電動機 |
WO2015045534A1 (ja) * | 2013-09-27 | 2015-04-02 | 富士電機株式会社 | 駆動回路および半導体装置 |
US9537478B2 (en) | 2014-03-06 | 2017-01-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP6731884B2 (ja) | 2017-05-19 | 2020-07-29 | 三菱電機株式会社 | ハイサイドゲート駆動回路、半導体モジュール、および3相インバータシステム |
US10333408B1 (en) * | 2018-04-26 | 2019-06-25 | Dialog Semiconductor (Uk) Limited | Compensation of level-shift capacitance |
US10826374B2 (en) * | 2018-08-08 | 2020-11-03 | Semiconductor Components Industries, Llc | Control of pulse generator in driving control device |
US10790826B1 (en) * | 2019-05-19 | 2020-09-29 | Novatek Microelectronics Corp. | Level shifter with low power consumption |
DE102023115831B3 (de) * | 2023-06-16 | 2024-10-02 | Infineon Technologies Austria Ag | Gatetreiber und Verfahren zum Ansteuern eines Leistungsschalters mit einer Austastzeitsteuerung |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS621191A (ja) * | 1985-03-11 | 1987-01-07 | Nec Ic Microcomput Syst Ltd | 信号出力回路 |
IT1221251B (it) * | 1988-02-25 | 1990-06-27 | Sgs Thomson Microelectronics | Circuito mos per il pilotaggio di un carico dal lato alto della alimentazione |
FR2656965B1 (fr) * | 1990-01-09 | 1995-01-20 | Sgs Thomson Microelectronics | Commande et controle d'un commutateur de puissance. |
DE69403965T2 (de) * | 1994-09-16 | 1998-01-29 | Sgs Thomson Microelectronics | Integrierte Steuerschaltungsanordnung mit einem Pegelschieber zum Schalten eines elektronischen Schalters |
JP3429937B2 (ja) * | 1996-01-12 | 2003-07-28 | 三菱電機株式会社 | 半導体装置 |
US6362679B2 (en) * | 2000-02-23 | 2002-03-26 | Tripath Technology, Inc. | Power device driver circuit |
-
2001
- 2001-09-05 JP JP2001268613A patent/JP4382312B2/ja not_active Expired - Lifetime
-
2002
- 2002-06-19 US US10/173,673 patent/US6538481B1/en not_active Expired - Lifetime
- 2002-06-24 KR KR10-2002-0035370A patent/KR100428987B1/ko active IP Right Grant
- 2002-08-02 DE DE10235444A patent/DE10235444B4/de not_active Expired - Lifetime
- 2002-08-05 CN CNB021277761A patent/CN1232022C/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20030048116A1 (en) | 2003-03-13 |
US6538481B1 (en) | 2003-03-25 |
JP2003079131A (ja) | 2003-03-14 |
CN1232022C (zh) | 2005-12-14 |
KR100428987B1 (ko) | 2004-04-29 |
DE10235444A1 (de) | 2003-04-03 |
DE10235444B4 (de) | 2010-12-09 |
JP4382312B2 (ja) | 2009-12-09 |
CN1404209A (zh) | 2003-03-19 |
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