KR20020086243A - 가공물로 부터 슬라이스의 절삭방법 - Google Patents
가공물로 부터 슬라이스의 절삭방법 Download PDFInfo
- Publication number
- KR20020086243A KR20020086243A KR1020020025043A KR20020025043A KR20020086243A KR 20020086243 A KR20020086243 A KR 20020086243A KR 1020020025043 A KR1020020025043 A KR 1020020025043A KR 20020025043 A KR20020025043 A KR 20020025043A KR 20020086243 A KR20020086243 A KR 20020086243A
- Authority
- KR
- South Korea
- Prior art keywords
- workpiece
- temperature
- control
- cutting
- slurry
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 45
- 238000005520 cutting process Methods 0.000 title claims abstract description 30
- 238000005259 measurement Methods 0.000 claims abstract description 10
- 239000002002 slurry Substances 0.000 claims description 40
- 239000004568 cement Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 239000002826 coolant Substances 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 11
- 238000001816 cooling Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000009529 body temperature measurement Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000000110 cooling liquid Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 241000220317 Rosa Species 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0076—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0064—Devices for the automatic drive or the program control of the machines
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims (11)
- 톱에 의해 로드 또는 블록형상인 가공물을 절삭하는 방법에 있어서,가공물의 온도를 절삭시 측정하며 그 측정신호는 가공물의 온도제어에 사용되는 제어신호를 생성하는 제어장치에 전송됨을 특징으로 하는 가공물의 절삭방법.
- 톱에 의해 로드 또는 블록형상인 가공물을 절삭하는 방법에 있어서,가공물의 온도가 소정의 제어거브를 기재로 한 제어신호에 의해 제어시 제어됨을 특징으로 하는 가공물의 절삭방법.
- 제2항에 있어서,제어커브는 절삭시 가공물의 온도를 측정함으로 결정되며, 가공물온도를 제어하기 위해 사용되는 측정신호가 측정에 의해 생성되며, 이때 그 제어커브가 기록됨을 특징으로 하는 가공물의 절삭방법.
- 제2항에 있어서,제어커브를 선택하여 가공물의 물질과 형상을 정합시키는 것을 특징으로 하는 가공물의 절삭방법.
- 제1항에 있어서,제어신호에 의해 냉각매체의 온도를 설정하는 열교환기를 제어하며, 냉각매체를 가공물에 공급하여 가공물의 온도를 제어하는 것을 특징으로 하는 가공물의 절삭방법.
- 제5항에 있어서,냉각매체는 액체 또는 기체이며, 그 냉각매체는 가공물상부에 또는 상부측면에 배치된 노즐을 통하여 가공물에 공급됨을 특징으로 하는 가공물의 절삭방법.
- 제6항에 있어서,액체는 가공물을 절삭하기 위해 사용되는 슬러리와 동일함을 특징으로 하는 가공물의 절삭방법.
- 제1항 또는 제2항에 있어서,제어신호는 가공물 또는 시멘트의 스트립에 배치되어 가공물의 온도를 제어를 하기 위해 사용하는 최소한 1개의 펠티어소자(Peltier element)를 제어함을 특징으로 하는 가공물의 절삭방법.
- 제1항 또는 제3항에 있어서,가공물의 온도는 가공물의 표면 또는 시멘트의 스트립 또는 시멘트스트립의 보어(bore)에 있는 여러장소에서 동시에 측정됨을 특징으로 하는 가공물의 절삭방법.
- 청구항 1, 3 또는 9항에 잇어서,가공물의 온도는 가공물의 전면에서 측정됨을 특징으로 하는 가공물의 절삭방법.
- 제1항에 있어서,가공물의 온도는 일정하게 유지됨을 특징으로 하는 가공물의 절삭방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10122628.4 | 2001-05-10 | ||
DE10122628A DE10122628B4 (de) | 2001-05-10 | 2001-05-10 | Verfahren zum Abtrennen von Scheiben von einem Werkstück |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020086243A true KR20020086243A (ko) | 2002-11-18 |
KR100498709B1 KR100498709B1 (ko) | 2005-07-01 |
Family
ID=7684226
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2002-0025043A KR100498709B1 (ko) | 2001-05-10 | 2002-05-07 | 가공물로부터의 슬라이스 절삭 방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6773333B2 (ko) |
JP (1) | JP4076130B2 (ko) |
KR (1) | KR100498709B1 (ko) |
CN (1) | CN1284657C (ko) |
DE (1) | DE10122628B4 (ko) |
TW (1) | TW546179B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102744798A (zh) * | 2011-04-22 | 2012-10-24 | 上海闽盛机械设备制造有限公司 | 一种对锯切机切割硬质材料的控制方法 |
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US7414881B2 (en) * | 2004-03-31 | 2008-08-19 | Nec Corporation | Magnetization direction control method and application thereof to MRAM |
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JP4816511B2 (ja) * | 2007-03-06 | 2011-11-16 | 信越半導体株式会社 | 切断方法およびワイヤソー装置 |
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US20100126488A1 (en) * | 2008-11-25 | 2010-05-27 | Abhaya Kumar Bakshi | Method and apparatus for cutting wafers by wire sawing |
US8065995B2 (en) * | 2008-11-25 | 2011-11-29 | Cambridge Energy Resources Inc | Method and apparatus for cutting and cleaning wafers in a wire saw |
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KR101452861B1 (ko) * | 2010-09-30 | 2014-10-27 | 삼성전자주식회사 | 평활화 보간 필터를 이용하여 영상을 보간하는 방법 및 그 장치 |
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DE102011008400B4 (de) | 2011-01-12 | 2014-07-10 | Siltronic Ag | Verfahren zur Kühlung eines Werkstückes aus Halbleitermaterial beim Drahtsägen |
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JP5427822B2 (ja) * | 2011-04-05 | 2014-02-26 | ジルトロニック アクチエンゲゼルシャフト | ワイヤーソーによるワークの切断方法 |
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JP2016135529A (ja) * | 2015-01-23 | 2016-07-28 | 信越半導体株式会社 | ワークの切断方法 |
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KR101841551B1 (ko) * | 2016-11-23 | 2018-03-23 | 에스케이실트론 주식회사 | 잉곳 가압 장치 및 이를 포함하는 잉곳 절단 장치 |
CN108724495B (zh) * | 2017-04-24 | 2020-04-10 | 上海新昇半导体科技有限公司 | 硅片切割装置 |
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JP6753390B2 (ja) * | 2017-12-25 | 2020-09-09 | 信越半導体株式会社 | ワイヤソー装置およびウェーハの製造方法 |
CN109129948B (zh) * | 2018-10-24 | 2023-09-01 | 乐山新天源太阳能科技有限公司 | 自动循环喷淋硅片切割机 |
DE102018221922A1 (de) * | 2018-12-17 | 2020-06-18 | Siltronic Ag | Verfahren zur Herstellung von Halbleiterscheiben mittels einer Drahtsäge, Drahtsäge und Halbleiterscheibe aus einkristallinem Silizium |
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CN110733139B (zh) * | 2019-10-14 | 2021-05-28 | 西安奕斯伟硅片技术有限公司 | 一种晶棒切割装置及方法 |
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-
2001
- 2001-05-10 DE DE10122628A patent/DE10122628B4/de not_active Expired - Lifetime
-
2002
- 2002-05-03 US US10/139,210 patent/US6773333B2/en not_active Expired - Lifetime
- 2002-05-07 KR KR10-2002-0025043A patent/KR100498709B1/ko active IP Right Grant
- 2002-05-08 CN CNB021190380A patent/CN1284657C/zh not_active Expired - Lifetime
- 2002-05-09 TW TW091109639A patent/TW546179B/zh not_active IP Right Cessation
- 2002-05-09 JP JP2002133875A patent/JP4076130B2/ja not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102744798A (zh) * | 2011-04-22 | 2012-10-24 | 上海闽盛机械设备制造有限公司 | 一种对锯切机切割硬质材料的控制方法 |
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Publication number | Publication date |
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DE10122628B4 (de) | 2007-10-11 |
US20020174861A1 (en) | 2002-11-28 |
US6773333B2 (en) | 2004-08-10 |
CN1385288A (zh) | 2002-12-18 |
JP4076130B2 (ja) | 2008-04-16 |
TW546179B (en) | 2003-08-11 |
JP2003001624A (ja) | 2003-01-08 |
DE10122628A1 (de) | 2002-11-21 |
CN1284657C (zh) | 2006-11-15 |
KR100498709B1 (ko) | 2005-07-01 |
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