KR20020080387A - 촉매, 이의 제조방법, 및 촉매를 이용하는 반응 - Google Patents
촉매, 이의 제조방법, 및 촉매를 이용하는 반응 Download PDFInfo
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- KR20020080387A KR20020080387A KR1020027009491A KR20027009491A KR20020080387A KR 20020080387 A KR20020080387 A KR 20020080387A KR 1020027009491 A KR1020027009491 A KR 1020027009491A KR 20027009491 A KR20027009491 A KR 20027009491A KR 20020080387 A KR20020080387 A KR 20020080387A
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- South Korea
- Prior art keywords
- catalyst
- layer
- support layer
- porous support
- foam
- Prior art date
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/02—Impregnation, coating or precipitation
- B01J37/024—Multiple impregnation or coating
- B01J37/0244—Coatings comprising several layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/02—Impregnation, coating or precipitation
- B01J37/0215—Coating
- B01J37/0225—Coating of metal substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/00781—Aspects relating to microreactors
- B01J2219/00819—Materials of construction
- B01J2219/00835—Comprising catalytically active material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/50—Catalysts, in general, characterised by their form or physical properties characterised by their shape or configuration
- B01J35/56—Foraminous structures having flow-through passages or channels, e.g. grids or three-dimensional monoliths
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- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49345—Catalytic device making
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Abstract
Description
Claims (56)
- 다공질 금속 지지층, 버퍼층, 계면층, 및 표면 상의 촉매 활성층을 갖는 촉매에 있어서, 다공질 금속 지지층은 평균 기공 크기가 1㎛∼1000㎛이고, 다공질 금속 지지층은 벌집, 폼, 펠트 및 와드로 구성되는 그룹 중에서 선택되며, 버퍼층은 다공질 지지층과 계면층사이에 배치되고, 계면층은 촉매 활성층과 버퍼층사이에 배치되는 것을 특징으로 하는 촉매.
- 다공질 지지층, 버퍼층, 및 계면층을 갖는 촉매에 있어서, 다공질 금속 지지층은 평균 기공 크기가 1㎛∼1000㎛이고, 다공질 금속 지지층은 벌집, 폼, 펠트 및 와드로 구성되는 그룹 중에서 선택되며, 버퍼층은 조성이 상이한 2개 이상의 서브층으로 구성되고, 버퍼층은 다공질 지지층과 계면층사이에 배치되는 것을 특징으로 하는 촉매.
- 제 2 항에 있어서, 추가로 계면층 상의 촉매 활성층을 갖는 것을 특징으로 하는 촉매.
- 다공질 금속 지지층, 버퍼층, 및 계면층을 갖는 촉매에 있어서, 다공질 금속 지지층은 평균 기공 크기가 1㎛∼1000㎛이고, 다공질 금속 지지층은 벌집, 폼, 펠트 및 와드로 구성되는 그룹 중에서 선택되며, 버퍼층은 다공질 지지층과 계면층사이에 배치되고, 촉매는 공기 중에서 3회의 열사이클에 노출되는 경우, 촉매가 2% 미만의 플레이킹을 나타내도록 열사이클링 안정성을 지니는 것을 특징으로 하는 촉매.
- 제 4 항에 있어서, 다공질 지지층은 금속이고, 촉매는 공기 중에서 2500분간 580℃에서 가열되면, 촉매가 5% 미만으로 중량이 증가되도록 내산화성을 지니는 것을 특징으로 하는 촉매.
- 벌집, 폼, 펠트 및 와드로 구성되는 그룹 중에서 선택되는 다공질 지지층을 선택하는 단계,다공질 지지층에 버퍼층을 증착시키는 단계, 및버퍼층에 계면층을 부착시키는 단계를 포함하는 것을 특징으로 하는 촉매의 제조방법.
- 하나 이상의 반응물을 제 1 항의 촉매를 포함하는 반응실로 통과시키는 단계,하나 이상의 반응물을 하나 이상의 생성물로 전환시키는 단계, 및생성물을 반응실 외부로 통과시키는 단계를 포함하는 것을 특징으로 하는 하나 이상의 반응물을 하나 이상의 생성물로 전환시키는 프로세스.
- 하나 이상의 반응물을 제 2 항의 촉매를 포함하는 반응실로 통과시키는 단계,하나 이상의 반응물을 하나 이상의 생성물로 전환시키는 단계, 및생성물을 반응실 외부로 통과시키는 단계를 포함하는 것을 특징으로 하는 하나 이상의 반응물을 하나 이상의 생성물로 전환시키는 프로세스.
- 하나 이상의 반응물을 제 3 항의 촉매를 포함하는 반응실로 통과시키는 단계,하나 이상의 반응물을 하나 이상의 생성물로 전환시키는 단계, 및생성물을 반응실 외부로 통과시키는 단계를 포함하는 것을 특징으로 하는 하나 이상의 반응물을 하나 이상의 생성물로 전환시키는 프로세스.
- 제 9 항에 있어서, 상기 프로세스는 아세틸화, 부가 반응, 알킬화, 탈알킬기 반응, 수소화 탈알킬기 반응, 환원성 알킬화, 아미노화, 방향족화, 아릴화, 자열개질(autothermal reforming), 카보닐화, 탈카보닐화, 환원성 카보닐화, 카복시화, 환원성 카복시화, 환원성 커플링, 축합, 크래킹, 하이드로크래킹, 고리화, 사이클로올리고머화, 할로겐 이탈 반응, 이량체화, 에폭시화, 에스테르화, 교환, 피셔ㆍ트롭슈, 할로겐화, 할로겐화수소 첨가, 동족체화, 수화, 탈수, 수소화, 탈수소, 하이드로카복시화, 하이드로포르밀화, 가수소 분해, 하이드로메탈레이션 (hydrometallation), 하이드로실레이션(hydrosilation), 가수분해, 하이드로트리팅(hydrotreating), 수소화 탈황/수소화 탈질소(HDS/HDN), 이성질화, 메탄올 합성, 메틸화, 탈메틸, 복분해, 니트로화, 산화, 부분 산화, 중합, 환원, 증기ㆍ이산화소 개질, 술폰화, 텔로메리제이션, 에스테르 교환반응, 삼량체화, 수성가스 전화반응(WGS), 및 역 수성가스 전화반응(RWGS)로 구성되는 그룹 중에서 선택되는 것을 특징으로 하는 하나 이상의 반응물을 하나 이상의 생성물로 전환시키는 프로세스.
- 제 7 항에 있어서, 상기 프로세스는 아세틸화, 부가 반응, 알킬화, 탈알킬기 반응, 수소화 탈알킬기 반응, 환원성 알킬화, 아미노화, 방향족화, 아릴화, 자열개질, 카보닐화, 탈카보닐화, 환원성 카보닐화, 카복시화, 환원성 카복시화, 환원성 커플링, 축합, 크래킹, 하이드로크래킹, 고리화, 사이클로올리고머화, 할로겐 이탈 반응, 이량체화, 에폭시화, 에스테르화, 교환, 피셔ㆍ트롭슈, 할로겐화, 할로겐화수소 첨가, 동족체화, 수화, 탈수, 수소화, 탈수소, 하이드로카복시화, 하이드로포르밀화, 가수소 분해, 하이드로메탈레이션, 하이드로실레이션, 가수분해, 하이드로트리팅, 수소화 탈황/수소화 탈질소(HDS/HDN), 이성질화, 메탄올 합성, 메틸화, 탈메틸, 복분해, 니트로화, 산화, 부분 산화, 중합, 환원, 증기ㆍ이산화소 개질, 술폰화, 텔로메리제이션, 에스테르 교환반응, 삼량체화, 수성가스 전화반응(WGS), 및 역 수성가스 전화반응(RWGS)로 구성되는 그룹 중에서 선택되는 것을 특징으로 하는 하나 이상의 반응물을 하나 이상의 생성물로 전환시키는 프로세스.
- 제 8 항에 있어서, 상기 프로세스는 아세틸화, 부가 반응, 알킬화, 탈알킬기 반응, 수소화 탈알킬기 반응, 환원성 알킬화, 아미노화, 방향족화, 아릴화, 자열개질, 카보닐화, 탈카보닐화, 환원성 카보닐화, 카복시화, 환원성 카복시화, 환원성 커플링, 축합, 크래킹, 하이드로크래킹, 고리화, 사이클로올리고머화, 할로겐 이탈 반응, 이량체화, 에폭시화, 에스테르화, 교환, 피셔ㆍ트롭슈, 할로겐화, 할로겐화수소 첨가, 동족체화, 수화, 탈수, 수소화, 탈수소, 하이드로카복시화, 하이드로포르밀화, 가수소 분해, 하이드로메탈레이션, 하이드로실레이션, 가수분해, 하이드로트리팅, 수소화 탈황/수소화 탈질소(HDS/HDN), 이성질화, 메탄올 합성, 메틸화, 탈메틸, 복분해, 니트로화, 산화, 부분 산화, 중합, 환원, 증기ㆍ이산화소 개질, 술폰화, 텔로메리제이션, 에스테르 교환반응, 삼량체화, 수성가스 전화반응(WGS), 및 역 수성가스 전화반응(RWGS)로 구성되는 그룹 중에서 선택되는 것을 특징으로 하는 하나 이상의 반응물을 하나 이상의 생성물로 전환시키는 프로세스.
- 마이크로채널 장치의 내벽 중 적어도 하나는 버퍼층으로 코팅되어 있는 것을 특징으로 하는 마이크로채널 장치.
- 제 13 항에 있어서, 버퍼층에 배치된 계면층을 추가로 포함하는 것을 특징으로 하는 마이크로채널 장치.
- 제 13 항에 있어서, 버퍼층은 증착되는 것을 특징으로 하는 마이크로채널 장치.
- 제 14 항에 있어서, 상기 벽은 반응실의 하나 이상의 벽을 포함하고, 계면층에 배치된 촉매 활성층을 추가로 구비하는 것을 특징으로 하는 마이크로채널 장치.
- 제 6 항에 있어서, 상기 버퍼층은 이산화티탄인 것을 특징으로 하는 촉매의 제조방법.
- 제 1 항에 있어서, 촉매는 공기 중에서 3회의 열사이클에 노출되는 경우, 촉매가 2% 미만의 플레이킹을 나타내도록 열사이클링 안정성을 지니는 것을 특징으로 하는 촉매.
- 제 1 항에 있어서, 촉매는 공기 중에서 2500분간 580℃에서 가열되면, 촉매가 5% 미만으로 중량이 증가되도록 내산화성을 지니는 것을 특징으로 하는 촉매.
- 제 7 항에 있어서, 상기 반응실은 벽을 갖고, 상기 벽 중 적어도 하나에는 버퍼층, 계면층 및 촉매 활성층이 부착되어 있는 것을 특징으로 하는 하나 이상의 반응물을 하나 이상의 생성물로 전환시키는 프로세스.
- 제 1 항에 있어서, 촉매는 공기 중에서 1500분간 750℃에서 가열되면, 촉매가 0.5% 미만으로 중량이 증가되도록 내산화성을 지니는 것을 특징으로 하는 촉매.
- 제 1 항에 있어서, 다공질 지지층은 금속이고, 촉매 활성층은 촉매를 통과하는 반응물이 촉매를 통해 경로를 따라 어디에서나 반응할 수 있도록 촉매를 통해 표면에 분포되는 것을 특징으로 하는 촉매.
- 제 2 항에 있어서, 상기 2개 이상의 서브층은 TiO2로 구성되는 다공질 지지층과 접촉하는 제 1 서브층 및 α- Al2O3로 구성되는 제 2 서브층을 포함하는 것을 특징으로 하는 촉매.
- 제 1 항에 있어서, 상기 버퍼층은 비다공질인 것을 특징으로 하는 촉매.
- 제 5 항에 있어서, 버퍼층은 두께가 0.05∼10㎛인 것을 특징으로 하는 촉매.
- 제 2 항에 있어서, 계면층은 금속 산화물로 구성되는 것을 특징으로 하는 촉매.
- 제 2 항에 있어서, 계면층은 그 위에 부착되는 촉매 활성층이 추가되지 않고도 촉매 활성층으로서 작용할 수 있는 것을 특징으로 하는 촉매.
- 제 2 항에 있어서, 계면층은 조성이 상이한 2개 이상의 서브층을 포함하는 것을 특징으로 하는 촉매.
- 제 1 항에 있어서, 계면층은 BET 표면적이 1㎡/g 이상인 것을 특징으로 하는 촉매.
- 제 4 항에 있어서, 촉매는 폭이 0.1㎜∼약 2㎝, 두께가 1㎝ 미만인 모놀리스인 것을 특징으로 하는 촉매.
- 제 6 항에 있어서, 촉매 활성재는 계면층과 동시에 부착되는 것을 특징으로 하는 촉매의 제조방법.
- 제 6 항에 있어서, 계면층은 용액으로부터 부착되는 것을 특징으로 하는 촉매의 제조방법.
- 제 6 항에 있어서, 증착 단계는 화학 증착을 포함하는 것을 특징으로 하는 촉매의 제조방법.
- 제 6 항에 있어서, TiO2층을 증착하는 단계, TiO2층에 조밀한 알루미나층을 증착하는 단계, 및 조밀한 알루미나층에 덜 조밀한 고 표면적의 알루미나층을 부착하는 단계를 포함하는 것을 특징으로 하는 촉매의 제조방법.
- 제 6 항에 있어서, 다공질 지지층은 금속 폼을 포함하고, 촉매는 표면적이 2.0g/㎤ 보다 큰 것을 특징으로 하는 촉매의 제조방법.
- 제 6 항에 있어서, 다공질 지지층은 금속 폼을 포함하고, 금속 폼은 버퍼층을 증착하기 전에 에칭되는 것을 특징으로 하는 촉매의 제조방법.
- 제 33 항에 있어서, 다공질 지지층은 금속 폼을 포함하고, 화학 증착은 250∼800℃의 온도범위에서 행해지는 것을 특징으로 하는 촉매의 제조방법.
- 제 33 항에 있어서, 화학 증착용 전구물질은 유기 금속 화합물, 할로겐화물, 카보닐, 아세토네이트 및 아세테이트로 구성되는 그룹 중에서 선택되는 것을 특징으로 하는 촉매의 제조방법.
- 제 6 항에 있어서, 지지층은 벌집, 폼, 펠트 및 와드로 구성되는 그룹 중에서 선택되는 금속을 포함하고, 촉매는 공기 중에서 1500분간 750℃에서 가열되면,촉매가 0.5% 미만으로 중량이 증가되도록 내산화성을 지니는 것을 특징으로 하는 촉매의 제조방법.
- 제 1 항에 있어서, 계면층은 질소화물, 탄화물, 황화물, 할로겐화물, 및 탄소로 구성되는 그룹 중에서 선택되는 재료를 포함하는 것을 특징으로 하는 촉매.
- 제 23 항에 있어서, 계면층은 제 2 서브층보다 덜 조밀한 고 표면적의 알루미나층을 포함하는 것을 특징으로 하는 촉매.
- 제 41 항에 있어서, 계면층에 부착되는 촉매를 추가로 포함하는 것을 특징으로 하는 촉매.
- 제 1 항에 있어서, 공기 중에서 1500분간 750℃에서 가열되면, 촉매가 0.5% 미만으로 중량이 증가되도록 내산화성을 지니는 것을 특징으로 하는 촉매.
- 제 6 항에 있어서, 다공질 지지층은 다공률이 70%∼98%인 것을 특징으로 하는 촉매의 제조방법.
- 제 2 항에 있어서, 다공질 지지층은 다공률이 70%∼98%인 것을 특징으로 하는 촉매.
- 제 4 항에 있어서, 다공질 지지층은 다공률이 70%∼98%인 것을 특징으로 하는 촉매.
- 제 1 항에 있어서, 다공질 지지층은 폼, 펠트, 와드 또는 이들의 조합을 포함하는 것을 특징으로 하는 촉매.
- 제 2 항에 있어서, 다공질 지지층은 폼, 펠트, 와드 또는 이들의 조합을 포함하는 것을 특징으로 하는 촉매.
- 제 4 항에 있어서, 다공질 지지층은 폼, 펠트, 와드 또는 이들의 조합을 포함하는 것을 특징으로 하는 촉매.
- 제 6 항에 있어서, 다공질 지지층은 폼, 펠트, 와드 또는 이들의 조합을 포함하는 것을 특징으로 하는 촉매의 제조방법.
- 제 50 항에 있어서, 증착 단계는 화학 증착을 포함하는 것을 특징으로 하는 촉매의 제조방법.
- 제 1 항에 있어서, 다공질 금속 지지층은 평균 기공 크기가 1㎛∼500㎛인 것을 특징으로 하는 촉매.
- 제 4 항에 있어서, 다공성 금속 지지층은 평균 기공 크기가 1㎛∼500㎛인 것을 특징으로 하는 촉매.
- 제 1 항에 있어서, 계면층은 두께가 1㎛∼50㎛인 것을 특징으로 하는 촉매.
- 제 2 항에 있어서, 계면층은 두께가 1㎛∼50㎛인 것을 특징으로 하는 촉매.
- 제 4 항에 있어서, 계면층은 두께가 1㎛∼50㎛인 것을 특징으로 하는 촉매.
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Cited By (7)
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KR100691438B1 (ko) * | 2005-11-08 | 2007-03-09 | 삼성전기주식회사 | 박막형 개질 기의 촉매 형성방법 |
WO2023068497A1 (ko) * | 2021-10-21 | 2023-04-27 | 주식회사 엘지화학 | 메탄 개질용 촉매 및 이의 제조방법 |
WO2023090583A1 (ko) * | 2021-11-17 | 2023-05-25 | 주식회사 엘지화학 | 메탄 개질용 촉매 및 이의 제조방법 |
WO2023090586A1 (ko) * | 2021-11-18 | 2023-05-25 | 주식회사 엘지화학 | 메탄 개질용 촉매 및 이의 제조방법 |
WO2023090585A1 (ko) * | 2021-11-18 | 2023-05-25 | 주식회사 엘지화학 | 메탄 개질용 촉매 및 이의 제조방법 |
WO2024085448A1 (ko) * | 2022-10-19 | 2024-04-25 | 주식회사 엘지화학 | 메탄 개질용 촉매 및 이의 제조방법 |
WO2024096319A1 (ko) * | 2022-11-04 | 2024-05-10 | 주식회사 엘지화학 | 메탄 개질용 촉매 및 이의 제조방법 |
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RU2002120794A (ru) | 2004-01-10 |
US20030007904A1 (en) | 2003-01-09 |
WO2001054812A1 (en) | 2001-08-02 |
JP2012110894A (ja) | 2012-06-14 |
HK1053996A1 (en) | 2003-11-14 |
US7498001B2 (en) | 2009-03-03 |
WO2001054812B1 (en) | 2001-11-29 |
AU778052C (en) | 2005-09-01 |
CA2396144C (en) | 2013-11-19 |
EP1257362B1 (en) | 2013-05-08 |
CN1211162C (zh) | 2005-07-20 |
CA2396144A1 (en) | 2001-08-02 |
KR100670954B1 (ko) | 2007-01-17 |
US20040188326A1 (en) | 2004-09-30 |
RU2257955C2 (ru) | 2005-08-10 |
EP2295140A1 (en) | 2011-03-16 |
AU2005200598A1 (en) | 2005-03-10 |
AU2005200598B2 (en) | 2007-12-20 |
JP5964594B2 (ja) | 2016-08-03 |
CN1400923A (zh) | 2003-03-05 |
AU778052B2 (en) | 2004-11-11 |
US6440895B1 (en) | 2002-08-27 |
AU3466601A (en) | 2001-08-07 |
JP4982717B2 (ja) | 2012-07-25 |
NO20023080L (no) | 2002-09-13 |
US6762149B2 (en) | 2004-07-13 |
NO20023080D0 (no) | 2002-06-26 |
JP2003520675A (ja) | 2003-07-08 |
EP1257362A1 (en) | 2002-11-20 |
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