KR20020012113A - 연마방법, 배선형성방법 및 반도체 장치의 제조방법 - Google Patents

연마방법, 배선형성방법 및 반도체 장치의 제조방법 Download PDF

Info

Publication number
KR20020012113A
KR20020012113A KR1020010021948A KR20010021948A KR20020012113A KR 20020012113 A KR20020012113 A KR 20020012113A KR 1020010021948 A KR1020010021948 A KR 1020010021948A KR 20010021948 A KR20010021948 A KR 20010021948A KR 20020012113 A KR20020012113 A KR 20020012113A
Authority
KR
South Korea
Prior art keywords
polishing
film
polishing liquid
acid
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020010021948A
Other languages
English (en)
Korean (ko)
Inventor
콘도세이이치
사쿠마노리유키
혼마요시오
Original Assignee
가나이 쓰토무
가부시키가이샤 히타치세이사쿠쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가나이 쓰토무, 가부시키가이샤 히타치세이사쿠쇼 filed Critical 가나이 쓰토무
Publication of KR20020012113A publication Critical patent/KR20020012113A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40Chemomechanical polishing [CMP]
    • H10P52/403Chemomechanical polishing [CMP] of conductive or resistive materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Drying Of Semiconductors (AREA)
KR1020010021948A 2000-08-04 2001-04-24 연마방법, 배선형성방법 및 반도체 장치의 제조방법 Withdrawn KR20020012113A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000242750A JP2002050595A (ja) 2000-08-04 2000-08-04 研磨方法、配線形成方法及び半導体装置の製造方法
JP2000-242750 2000-08-04

Publications (1)

Publication Number Publication Date
KR20020012113A true KR20020012113A (ko) 2002-02-15

Family

ID=18733721

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010021948A Withdrawn KR20020012113A (ko) 2000-08-04 2001-04-24 연마방법, 배선형성방법 및 반도체 장치의 제조방법

Country Status (4)

Country Link
US (3) US6562719B2 (https=)
JP (1) JP2002050595A (https=)
KR (1) KR20020012113A (https=)
TW (1) TW503476B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070107242A (ko) * 2006-05-02 2007-11-07 주식회사 엘지화학 구리 몰리브덴 배선용 세정제

Families Citing this family (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001017006A1 (en) * 1999-08-26 2001-03-08 Hitachi Chemical Company, Ltd. Polishing compound for chemimechanical polishing and polishing method
JP2002050595A (ja) * 2000-08-04 2002-02-15 Hitachi Ltd 研磨方法、配線形成方法及び半導体装置の製造方法
US6896776B2 (en) * 2000-12-18 2005-05-24 Applied Materials Inc. Method and apparatus for electro-chemical processing
US6899804B2 (en) 2001-04-10 2005-05-31 Applied Materials, Inc. Electrolyte composition and treatment for electrolytic chemical mechanical polishing
US6811680B2 (en) * 2001-03-14 2004-11-02 Applied Materials Inc. Planarization of substrates using electrochemical mechanical polishing
US7128825B2 (en) * 2001-03-14 2006-10-31 Applied Materials, Inc. Method and composition for polishing a substrate
US7160432B2 (en) 2001-03-14 2007-01-09 Applied Materials, Inc. Method and composition for polishing a substrate
US7232514B2 (en) 2001-03-14 2007-06-19 Applied Materials, Inc. Method and composition for polishing a substrate
US7582564B2 (en) * 2001-03-14 2009-09-01 Applied Materials, Inc. Process and composition for conductive material removal by electrochemical mechanical polishing
US20060169597A1 (en) * 2001-03-14 2006-08-03 Applied Materials, Inc. Method and composition for polishing a substrate
US7323416B2 (en) * 2001-03-14 2008-01-29 Applied Materials, Inc. Method and composition for polishing a substrate
US6632259B2 (en) * 2001-05-18 2003-10-14 Rodel Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US6800218B2 (en) * 2001-08-23 2004-10-05 Advanced Technology Materials, Inc. Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same
KR20060135076A (ko) * 2001-08-28 2006-12-28 티디케이가부시기가이샤 박막 용량 소자용 조성물, 고유전율 절연막, 박막 용량소자 및 박막 적층 콘덴서
WO2003036705A1 (en) * 2001-10-26 2003-05-01 Asahi Glass Company, Limited Polishing compound, method for production thereof and polishing method
JP2003163214A (ja) * 2001-11-26 2003-06-06 Mitsubishi Electric Corp 半導体装置及びその製造方法
US6821897B2 (en) * 2001-12-05 2004-11-23 Cabot Microelectronics Corporation Method for copper CMP using polymeric complexing agents
US20070295611A1 (en) * 2001-12-21 2007-12-27 Liu Feng Q Method and composition for polishing a substrate
DE60322695D1 (de) 2002-04-30 2008-09-18 Hitachi Chemical Co Ltd Polierfluid und polierverfahren
JP3875156B2 (ja) * 2002-08-07 2007-01-31 花王株式会社 ロールオフ低減剤
JP4164324B2 (ja) * 2002-09-19 2008-10-15 スパンション エルエルシー 半導体装置の製造方法
US20040092102A1 (en) * 2002-11-12 2004-05-13 Sachem, Inc. Chemical mechanical polishing composition and method
US7419768B2 (en) * 2002-11-18 2008-09-02 Micron Technology, Inc. Methods of fabricating integrated circuitry
US7186305B2 (en) * 2002-11-26 2007-03-06 Donald Ferrier Process for improving the adhesion of polymeric materials to metal surfaces
IL154782A0 (en) * 2003-03-06 2003-10-31 J G Systems Inc Chemical-mechanical polishing composition containing organic nitro compounds
US7148147B2 (en) * 2003-03-06 2006-12-12 J.G. Systems, Inc. CMP composition containing organic nitro compounds
US7273095B2 (en) * 2003-03-11 2007-09-25 United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Nanoengineered thermal materials based on carbon nanotube array composites
US6933224B2 (en) * 2003-03-28 2005-08-23 Micron Technology, Inc. Method of fabricating integrated circuitry
JP4526777B2 (ja) * 2003-04-04 2010-08-18 ニッタ・ハース株式会社 水性コンディショニング液およびコンディショニング法
US7188630B2 (en) * 2003-05-07 2007-03-13 Freescale Semiconductor, Inc. Method to passivate conductive surfaces during semiconductor processing
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
US7390429B2 (en) * 2003-06-06 2008-06-24 Applied Materials, Inc. Method and composition for electrochemical mechanical polishing processing
AU2003297104A1 (en) * 2003-07-09 2005-02-25 Dynea Chemicals Oy Non-polymeric organic particles for chemical mechanical planarization
US7348281B2 (en) 2003-09-19 2008-03-25 Brewer Science Inc. Method of filling structures for forming via-first dual damascene interconnects
US7241725B2 (en) * 2003-09-25 2007-07-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Barrier polishing fluid
US7300480B2 (en) 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
US20050092620A1 (en) * 2003-10-01 2005-05-05 Applied Materials, Inc. Methods and apparatus for polishing a substrate
US7247566B2 (en) * 2003-10-23 2007-07-24 Dupont Air Products Nanomaterials Llc CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
US7514363B2 (en) * 2003-10-23 2009-04-07 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use
US20050126588A1 (en) * 2003-11-04 2005-06-16 Carter Melvin K. Chemical mechanical polishing slurries and cleaners containing salicylic acid as a corrosion inhibitor
KR100596865B1 (ko) * 2004-01-05 2006-07-04 주식회사 하이닉스반도체 고평탄성 슬러리 조성물 및 이를 이용한 층간 절연막의cmp 방법
US20060021974A1 (en) * 2004-01-29 2006-02-02 Applied Materials, Inc. Method and composition for polishing a substrate
US7390744B2 (en) * 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
US7497967B2 (en) * 2004-03-24 2009-03-03 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Compositions and methods for polishing copper
JP2005303062A (ja) * 2004-04-13 2005-10-27 Rubycon Corp 電解コンデンサ駆動用電解液及び電解コンデンサ
US7384871B2 (en) * 2004-07-01 2008-06-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US7303993B2 (en) * 2004-07-01 2007-12-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
JP2006080388A (ja) * 2004-09-10 2006-03-23 Nitta Haas Inc 金属研磨用組成物
US7084064B2 (en) 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
JP2006135072A (ja) * 2004-11-05 2006-05-25 Fujimi Inc 研磨方法
US7086935B2 (en) * 2004-11-24 2006-08-08 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cellulose-containing polishing compositions and methods relating thereto
US7435356B2 (en) * 2004-11-24 2008-10-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Abrasive-free chemical mechanical polishing compositions and methods relating thereto
US20060163206A1 (en) * 2005-01-25 2006-07-27 Irina Belov Novel polishing slurries and abrasive-free solutions having a multifunctional activator
US7427362B2 (en) * 2005-01-26 2008-09-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Corrosion-resistant barrier polishing solution
US20060196778A1 (en) * 2005-01-28 2006-09-07 Renhe Jia Tungsten electroprocessing
US20060169674A1 (en) * 2005-01-28 2006-08-03 Daxin Mao Method and composition for polishing a substrate
US20060191871A1 (en) * 2005-02-25 2006-08-31 Sheng-Yu Chen Cmp slurry delivery system and method of mixing slurry thereof
EP1700893B1 (en) * 2005-03-09 2008-10-01 JSR Corporation Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method, and kit for preparing chemical mechanical polishing aqueous dispersion
CN100482416C (zh) * 2005-03-15 2009-04-29 联华电子股份有限公司 化学机械研磨机台的研磨液供应设备与研磨液混合方法
US7311856B2 (en) * 2005-03-30 2007-12-25 Cabot Microelectronics Corporation Polymeric inhibitors for enhanced planarization
US20060223320A1 (en) * 2005-03-30 2006-10-05 Cooper Kevin E Polishing technique to minimize abrasive removal of material and composition therefor
US20060219663A1 (en) * 2005-03-31 2006-10-05 Applied Materials, Inc. Metal CMP process on one or more polishing stations using slurries with oxidizers
GB0507887D0 (en) * 2005-04-20 2005-05-25 Rohm & Haas Elect Mat Immersion method
US20060249394A1 (en) * 2005-05-05 2006-11-09 Applied Materials, Inc. Process and composition for electrochemical mechanical polishing
US20060249395A1 (en) * 2005-05-05 2006-11-09 Applied Material, Inc. Process and composition for electrochemical mechanical polishing
US7452481B2 (en) * 2005-05-16 2008-11-18 Kabushiki Kaisha Kobe Seiko Sho Polishing slurry and method of reclaiming wafers
US7939482B2 (en) * 2005-05-25 2011-05-10 Freescale Semiconductor, Inc. Cleaning solution for a semiconductor wafer
US7678702B2 (en) * 2005-08-31 2010-03-16 Air Products And Chemicals, Inc. CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use
JP4738959B2 (ja) * 2005-09-28 2011-08-03 東芝モバイルディスプレイ株式会社 配線構造体の形成方法
US7955519B2 (en) * 2005-09-30 2011-06-07 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
TWI408194B (zh) * 2005-12-23 2013-09-11 安集微電子有限公司 拋光漿料
TWI415914B (zh) * 2005-12-23 2013-11-21 Anji Microelectronics Co Ltd 可去除光阻層之組合物
TWI343945B (en) 2005-12-27 2011-06-21 Hitachi Chemical Co Ltd Slurry for metal polishing and polishing method of polished film
WO2007087830A1 (en) * 2006-02-03 2007-08-09 Freescale Semiconductor, Inc. Initiating chemical mechanical polishing with slurries having small abrasive particles
US8846149B2 (en) * 2006-02-21 2014-09-30 Taiwan Semiconductor Manufacturing Co., Ltd. Delamination resistant semiconductor film and method for forming the same
JPWO2007116770A1 (ja) * 2006-04-03 2009-08-20 Jsr株式会社 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体を調製するためのキット
US20070254485A1 (en) * 2006-04-28 2007-11-01 Daxin Mao Abrasive composition for electrochemical mechanical polishing
KR100852242B1 (ko) * 2006-08-16 2008-08-13 삼성전자주식회사 화학 기계적 연마용 슬러리 조성물, 이를 이용한 연마 방법및 반도체 메모리 소자의 제조 방법
US20100273330A1 (en) * 2006-08-23 2010-10-28 Citibank N.A. As Collateral Agent Rinse formulation for use in the manufacture of an integrated circuit
US20100087065A1 (en) * 2007-01-31 2010-04-08 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
JP5392080B2 (ja) * 2007-07-10 2014-01-22 日立化成株式会社 金属膜用研磨液及び研磨方法
WO2009017095A1 (ja) 2007-07-30 2009-02-05 Hitachi Chemical Co., Ltd. 金属用研磨液及び研磨方法
JP2009123880A (ja) * 2007-11-14 2009-06-04 Showa Denko Kk 研磨組成物
US20090191468A1 (en) * 2008-01-29 2009-07-30 International Business Machines Corporation Contact Level Mask Layouts By Introducing Anisotropic Sub-Resolution Assist Features
US8425797B2 (en) * 2008-03-21 2013-04-23 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
US20090250760A1 (en) * 2008-04-02 2009-10-08 International Business Machines Corporation Methods of forming high-k/metal gates for nfets and pfets
EP2273537A4 (en) * 2008-04-15 2012-07-25 Hitachi Chemical Co Ltd POLISHING SOLUTION FOR METAL FILMS AND THESE USE POLISHING METHOD
US7975246B2 (en) * 2008-08-14 2011-07-05 International Business Machines Corporation MEEF reduction by elongation of square shapes
WO2010092865A1 (ja) * 2009-02-16 2010-08-19 日立化成工業株式会社 研磨剤及び研磨方法
MY163071A (en) * 2011-06-29 2017-08-15 Sanyo Chemical Ind Ltd Electronic material polishing liquid
US20140127901A1 (en) * 2012-11-08 2014-05-08 Taiwan Semiconductor Manufacturing Company, Ltd. Low-k damage free integration scheme for copper interconnects
KR102160286B1 (ko) * 2013-11-04 2020-09-28 동우 화인켐 주식회사 액정표시장치용 어레이 기판의 제조방법
US9962801B2 (en) * 2014-01-07 2018-05-08 Taiwan Semiconductor Manufacturing Company Limited Systems and methods for performing chemical mechanical planarization
WO2016047714A1 (ja) * 2014-09-26 2016-03-31 株式会社フジミインコーポレーテッド 研磨用組成物
JP6418174B2 (ja) * 2016-02-03 2018-11-07 株式会社Sumco シリコンウェーハの片面研磨方法
US10253216B2 (en) * 2016-07-01 2019-04-09 Versum Materials Us, Llc Additives for barrier chemical mechanical planarization
US10157781B2 (en) * 2016-12-14 2018-12-18 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor structure using polishing process
US10804370B2 (en) * 2017-03-15 2020-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device, method, and tool of manufacture
US10636701B2 (en) * 2017-09-29 2020-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming semiconductor devices using multiple planarization processes
US10443135B1 (en) 2018-05-11 2019-10-15 Macdermid Enthone Inc. Near neutral pH pickle on multi-metals
KR20210107656A (ko) * 2018-12-18 2021-09-01 가부시키가이샤 도쿠야마 실리콘 에칭액
KR102782857B1 (ko) 2019-03-13 2025-03-14 삼성전자주식회사 연마 슬러리 및 반도체 소자의 제조 방법
CN112792571B (zh) * 2020-12-31 2021-12-21 广州数控设备有限公司 自动研磨铲刮系统

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3878250A (en) * 1970-08-31 1975-04-15 Japanese Geon Co Ltd Method of preventing the polymerization of methacrolein
JPS5221222A (en) 1975-08-13 1977-02-17 Mitsubishi Gas Chemical Co Chemical polishing solution for copper and its alloy
JPS5547382A (en) 1978-09-28 1980-04-03 Canon Inc Chemical polishing fluid
US4415460A (en) * 1979-07-30 1983-11-15 The Lummus Company Oxidation of organics in aqueous salt solutions
US4944836A (en) 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
US4954142A (en) 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US5084071A (en) 1989-03-07 1992-01-28 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US5300813A (en) * 1992-02-26 1994-04-05 International Business Machines Corporation Refractory metal capped low resistivity metal conductor lines and vias
JP3378033B2 (ja) 1992-08-11 2003-02-17 三井金属鉱業株式会社 黄銅用化学研磨液
US5489447A (en) * 1993-06-25 1996-02-06 Ciba-Geigy Corporation Carrier-bound ketocarboxylic acids as corrosion inhibitors
JPH0794455A (ja) 1993-09-24 1995-04-07 Sumitomo Metal Ind Ltd 配線の形成方法
JP3397501B2 (ja) 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
KR19980032145A (ko) 1996-10-04 1998-07-25 포만제프리엘 알루미늄 구리 합금의 화학기계적 연마시 구리 도금을 방지하는 방법
US6068787A (en) 1996-11-26 2000-05-30 Cabot Corporation Composition and slurry useful for metal CMP
US6309560B1 (en) 1996-12-09 2001-10-30 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6126853A (en) * 1996-12-09 2000-10-03 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
JP3371775B2 (ja) 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
US6063306A (en) * 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
JP4095731B2 (ja) * 1998-11-09 2008-06-04 株式会社ルネサステクノロジ 半導体装置の製造方法及び半導体装置
JP2000315666A (ja) * 1999-04-28 2000-11-14 Hitachi Ltd 半導体集積回路装置の製造方法
JP2002050595A (ja) * 2000-08-04 2002-02-15 Hitachi Ltd 研磨方法、配線形成方法及び半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070107242A (ko) * 2006-05-02 2007-11-07 주식회사 엘지화학 구리 몰리브덴 배선용 세정제

Also Published As

Publication number Publication date
US20020016073A1 (en) 2002-02-07
US20040171264A1 (en) 2004-09-02
JP2002050595A (ja) 2002-02-15
US6562719B2 (en) 2003-05-13
US20030186497A1 (en) 2003-10-02
US6750128B2 (en) 2004-06-15
TW503476B (en) 2002-09-21

Similar Documents

Publication Publication Date Title
KR20020012113A (ko) 연마방법, 배선형성방법 및 반도체 장치의 제조방법
JP3805588B2 (ja) 半導体装置の製造方法
KR100514536B1 (ko) 연마방법
JP5472049B2 (ja) 化学機械研磨用研磨剤
TWI382082B (zh) Cmp研磨液以及使用該研磨液之基板研磨方法
TW517296B (en) Method for manufacturing a semiconductor device
KR20030078002A (ko) 반도체 장치의 제조 방법
CN101767295A (zh) 化学机械抛光组合物及其相关方法
JP3970439B2 (ja) 半導体装置の製造方法
US20020148169A1 (en) Composition for metal CMP with low dishing and overpolish insensitivity
TW200409808A (en) Polishing compound composition, method for producing same and polishing method
JPH1140526A (ja) 配線形成方法及び半導体装置の製造方法
JP2008112969A (ja) 研磨液及びこの研磨液を用いた研磨方法
JP2003068683A (ja) 金属用研磨液及び研磨方法
JP2002110595A (ja) 配線形成方法、研磨方法及び半導体装置の製造方法
TW200405453A (en) Slurry and polishing method
JP3668694B2 (ja) 半導体装置の製造方法
JP4618267B2 (ja) 半導体装置の製造方法
JP2000299320A (ja) 配線形成方法
JP4684121B2 (ja) 化学機械研磨用研磨剤及び基板の研磨法
JP2006191132A (ja) 化学機械研磨用研磨剤及び基板の研磨法
JP2003324084A (ja) 研磨方法

Legal Events

Date Code Title Description
R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000