KR20010095312A - 서셉터 및 그 제조방법 - Google Patents
서셉터 및 그 제조방법 Download PDFInfo
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- KR20010095312A KR20010095312A KR1020010017907A KR20010017907A KR20010095312A KR 20010095312 A KR20010095312 A KR 20010095312A KR 1020010017907 A KR1020010017907 A KR 1020010017907A KR 20010017907 A KR20010017907 A KR 20010017907A KR 20010095312 A KR20010095312 A KR 20010095312A
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- South Korea
- Prior art keywords
- plate
- susceptor
- support plate
- alumina
- internal electrode
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims description 24
- 239000000919 ceramic Substances 0.000 claims abstract description 70
- 239000002131 composite material Substances 0.000 claims abstract description 62
- 239000004020 conductor Substances 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 31
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 39
- 239000000843 powder Substances 0.000 claims description 39
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 29
- 229910052721 tungsten Inorganic materials 0.000 claims description 25
- 239000010937 tungsten Substances 0.000 claims description 24
- 239000011810 insulating material Substances 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 19
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 14
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 13
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 13
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 12
- 238000002844 melting Methods 0.000 claims description 10
- 230000008018 melting Effects 0.000 claims description 10
- 229910052715 tantalum Inorganic materials 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 abstract description 18
- 238000005245 sintering Methods 0.000 abstract description 14
- 230000007797 corrosion Effects 0.000 abstract description 13
- 238000005260 corrosion Methods 0.000 abstract description 13
- 238000005304 joining Methods 0.000 description 12
- 229910010293 ceramic material Inorganic materials 0.000 description 10
- 239000002245 particle Substances 0.000 description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 239000011230 binding agent Substances 0.000 description 5
- 238000005553 drilling Methods 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 230000008646 thermal stress Effects 0.000 description 5
- 235000019441 ethanol Nutrition 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000003672 processing method Methods 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 125000003158 alcohol group Chemical group 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000009545 invasion Effects 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000000967 suction filtration Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (10)
- 판상시료를 올려놓는 재치판과, 이 재치판을 지지하는 지지판과, 이들 재치판과 지지판과의 사이에 마련되며, 외부와 접하지 않도록 마련된 내부전극과, 이 내부전극에 접하도록 상기 지지판에 관통하여 마련된 급전용 단자로 이루어지며, 상기 재치판과 상기 지지판이 이들을 구성하는 재료와 동일 조성 또는 주성분이 동일한 절연성 재료에 의해 접합 일체화되어 이루어지는 것을 특징으로 하는 전극 내장형 서셉터.
- 판상시료를 올려놓는 재치판과, 이 재치판을 지지하는 지지판과, 이들 재치판과 지지판과의 사이에 마련되며, 외부와 접하지 않도록 마련된 내부전극과, 이 내부전극에 접하도록 상기 지지판에 관통하여 마련된 급전용 단자로 이루어지며, 상기 내부전극과 상기 급전용 단자가 도전성 세라믹으로 구성되어 이루어지는 것을 특징으로 하는 전극 내장형 서셉터.
- 제 2항에 있어서, 상기 도전성 세라믹이, 알루미나-탄탈 카바이드 복합 세라믹 도전체, 알루미나-텅스텐 복합 세라믹 도전체, 알루미나-탄화규소 복합 세라믹 도전체, 질화알루미늄-텅스텐복합 세라믹 도전체 또는 질화알루미늄-탄탈 복합 세라믹 도전체 중 어느 하나의 복합 세라믹 도전체인 것을 특징으로 하는 전극 내장형 서셉터.
- 제 3항에 있어서, 상기 알루미나-탄탈 카바이드 복합 세라믹 도전체가, 54∼71중량%의 탄탈 카바이드를 함유하는 것을 특징으로 하는 전극 내장형 서셉터.
- 제 3항에 있어서, 상기 알루미나-텅스텐 복합 세라믹 도전체가 54∼95중량%의 텅스텐을 함유하는 것을 특징으로 하는 전극 내장형 서셉터.
- 제 3항에 있어서, 상기 알루미나-탄화규소 복합 세라믹 도전체가 5∼30중량%의 탄화규소를 함유하는 것을 특징으로 하는 전극 내장형 서셉터.
- 제 1항 또는 제 2항에 있어서, 상기 재치판과 상기 지지판이 알루미나기 소결체 또는 질화알루미늄기 소결체로 이루어지는 것을 특징으로 하는 전극 내장형 서셉터.
- 세라믹소결체로부터 판상의 재치판 및 지지판을 제작하고, 이어서 이 지지판에 급전용 단자를 고정하기 위한 고정공을 형성하고, 이어서, 이 고정공에 급전용 단자를 지지판을 관통하도록 끼워 결합하고, 이어서, 이 급전용 단자를 유지하는 지지판상에, 내부전극인 도전재층을 급전용 단자에 접하도록 하여 형성하고, 이어서, 상기 도전재층을 사이에 두고 지지판과 재치판을 서로 겹치고, 가압하에서 소결처리함으로써 이들을 일체화하고, 이들 지지판과 재치판과의 사이에 상기 도전재층으로 이루어지는 내부전극을 형성하는 것을 특징으로 하는 전극 내장형 서셉터의 제조방법.
- 제 8항에 있어서, 지지판과 재치판을 서로 겹칠 때, 지지판상의 상기 도전재층의 형성부분 이외의 영역에, 상기 재치판 및 지지판을 구성하는 세라믹소결체 재료와 동일조성 또는 주성분이 동일한 재료의 분말로 이루어지는 절연재층을 형성하는 것을 특징으로 하는 전극 내장형 서셉터의 제조방법.
- 제 8항 또는 제 9항에 있어서, 내부전극 또는 급전용 단자인 도전재로서, 알루미나-탄탈 카바이드 복합 세라믹 도전재, 알루미나-텅스텐 복합 세라믹 도전재, 알루미나-탄화규소 복합 세라믹 도전재, 질화알루미늄-텅스텐 복합 세라믹 도전재, 질화알루미늄-탄탈 복합 세라믹 도전재 또는 고융점 금속 중 어느 하나를 사용하는 것을 특징으로 하는 전극 내장형 서셉터의 제조방법.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000-103665 | 2000-04-05 | ||
JP2000103665A JP3746935B2 (ja) | 2000-04-05 | 2000-04-05 | サセプタ及びその製造方法 |
JP2000-118582 | 2000-04-19 | ||
JP2000118582A JP2001308165A (ja) | 2000-04-19 | 2000-04-19 | サセプタ及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010095312A true KR20010095312A (ko) | 2001-11-03 |
KR100553444B1 KR100553444B1 (ko) | 2006-02-20 |
Family
ID=26589517
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020010017907A KR100553444B1 (ko) | 2000-04-05 | 2001-04-04 | 서셉터 및 그 제조방법 |
Country Status (2)
Country | Link |
---|---|
US (1) | US6693789B2 (ko) |
KR (1) | KR100553444B1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100918714B1 (ko) * | 2001-11-13 | 2009-09-22 | 스미토모 오사카 세멘토 가부시키가이샤 | 전극 내장형 서셉터 및 그 제조 방법 |
WO2012030143A2 (en) * | 2010-09-01 | 2012-03-08 | Lg Innotek Co., Ltd. | Susceptor and method for manufacturing the same |
Families Citing this family (17)
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JP4008230B2 (ja) | 2001-11-14 | 2007-11-14 | 住友大阪セメント株式会社 | 静電チャックの製造方法 |
JP3808407B2 (ja) * | 2002-07-05 | 2006-08-09 | 住友大阪セメント株式会社 | 電極内蔵型サセプタ及びその製造方法 |
JP2004055608A (ja) * | 2002-07-16 | 2004-02-19 | Sumitomo Osaka Cement Co Ltd | 電極内蔵型サセプタ |
JP4569077B2 (ja) * | 2003-06-05 | 2010-10-27 | 住友電気工業株式会社 | 半導体あるいは液晶製造装置用保持体およびそれを搭載した半導体あるいは液晶製造装置 |
US20060054090A1 (en) * | 2004-09-15 | 2006-03-16 | Applied Materials, Inc. | PECVD susceptor support construction |
JP4482472B2 (ja) * | 2005-03-24 | 2010-06-16 | 日本碍子株式会社 | 静電チャック及びその製造方法 |
US7696455B2 (en) | 2006-05-03 | 2010-04-13 | Watlow Electric Manufacturing Company | Power terminals for ceramic heater and method of making the same |
JP4855177B2 (ja) * | 2006-08-10 | 2012-01-18 | 住友大阪セメント株式会社 | 静電チャック装置 |
JP5036248B2 (ja) * | 2006-08-10 | 2012-09-26 | 大日本スクリーン製造株式会社 | 熱処理装置および熱処理用サセプタ |
JP5029089B2 (ja) * | 2007-03-26 | 2012-09-19 | 東京エレクトロン株式会社 | プラズマ処理装置用の載置台及びプラズマ処理装置 |
JP4879929B2 (ja) * | 2008-03-26 | 2012-02-22 | 日本碍子株式会社 | 静電チャック及びその製造方法 |
KR101231356B1 (ko) | 2010-12-24 | 2013-02-07 | 엘지이노텍 주식회사 | 열간 가압 소결 장치 및 이를 이용한 서셉터 제조 방법 |
US10593521B2 (en) | 2013-03-12 | 2020-03-17 | Applied Materials, Inc. | Substrate support for plasma etch operations |
US20150090004A1 (en) * | 2013-10-01 | 2015-04-02 | Onesubsea Ip Uk Limited | Electrical Conductor and Method of Making Same |
JP6277015B2 (ja) * | 2014-02-28 | 2018-02-07 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP7227954B2 (ja) | 2018-02-20 | 2023-02-22 | 日本碍子株式会社 | 複合焼結体、半導体製造装置部材および複合焼結体の製造方法 |
KR101995760B1 (ko) * | 2018-04-02 | 2019-07-03 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
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JPH06115528A (ja) | 1992-09-29 | 1994-04-26 | Tsukishima Kikai Co Ltd | 粉体の自動供給装置 |
JP3177026B2 (ja) | 1992-11-12 | 2001-06-18 | 日本碍子株式会社 | セラミックスヒーター及びその製造方法 |
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JPH06151332A (ja) | 1992-11-12 | 1994-05-31 | Ngk Insulators Ltd | セラミックスヒーター |
JPH07307377A (ja) * | 1993-12-27 | 1995-11-21 | Shin Etsu Chem Co Ltd | 静電チャック付セラミックスヒーター |
JP3447495B2 (ja) | 1996-12-26 | 2003-09-16 | 京セラ株式会社 | ウエハ保持装置の給電構造 |
JPH11260534A (ja) * | 1998-01-09 | 1999-09-24 | Ngk Insulators Ltd | 加熱装置およびその製造方法 |
JP3323135B2 (ja) * | 1998-08-31 | 2002-09-09 | 京セラ株式会社 | 静電チャック |
JP2001077185A (ja) * | 1999-09-01 | 2001-03-23 | Shin Etsu Chem Co Ltd | 静電チャック及びその製造方法 |
JP2001308165A (ja) * | 2000-04-19 | 2001-11-02 | Sumitomo Osaka Cement Co Ltd | サセプタ及びその製造方法 |
-
2001
- 2001-04-03 US US09/825,860 patent/US6693789B2/en not_active Expired - Lifetime
- 2001-04-04 KR KR1020010017907A patent/KR100553444B1/ko active IP Right Grant
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100918714B1 (ko) * | 2001-11-13 | 2009-09-22 | 스미토모 오사카 세멘토 가부시키가이샤 | 전극 내장형 서셉터 및 그 제조 방법 |
WO2012030143A2 (en) * | 2010-09-01 | 2012-03-08 | Lg Innotek Co., Ltd. | Susceptor and method for manufacturing the same |
WO2012030143A3 (en) * | 2010-09-01 | 2012-05-31 | Lg Innotek Co., Ltd. | Susceptor and method for manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
US20020006678A1 (en) | 2002-01-17 |
KR100553444B1 (ko) | 2006-02-20 |
US6693789B2 (en) | 2004-02-17 |
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