KR20010050283A - 유전상수 ｋ가 낮은 유전체의 손상을 최소화하는, 금속플러그를 위한 예비세정 방법 - Google Patents

유전상수 ｋ가 낮은 유전체의 손상을 최소화하는, 금속플러그를 위한 예비세정 방법 Download PDF

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Publication number
KR20010050283A
KR20010050283A KR1020000050996A KR20000050996A KR20010050283A KR 20010050283 A KR20010050283 A KR 20010050283A KR 1020000050996 A KR1020000050996 A KR 1020000050996A KR 20000050996 A KR20000050996 A KR 20000050996A KR 20010050283 A KR20010050283 A KR 20010050283A
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KR
South Korea
Prior art keywords
dielectric
gas mixture
plasma
metal conductor
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
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KR1020000050996A
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English (en)
Korean (ko)
Inventor
바니엠. 코헨
수라즈 렌가라잔
케니킹-타이 난
Original Assignee
조셉 제이. 스위니
어플라이드 머티어리얼스, 인코포레이티드
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Application filed by 조셉 제이. 스위니, 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 조셉 제이. 스위니
Publication of KR20010050283A publication Critical patent/KR20010050283A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts

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  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020000050996A 1999-09-02 2000-08-31 유전상수 ｋ가 낮은 유전체의 손상을 최소화하는, 금속플러그를 위한 예비세정 방법 Withdrawn KR20010050283A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/388,991 US6346489B1 (en) 1999-09-02 1999-09-02 Precleaning process for metal plug that minimizes damage to low-κ dielectric
US9/388,991 1999-09-02

Publications (1)

Publication Number Publication Date
KR20010050283A true KR20010050283A (ko) 2001-06-15

Family

ID=23536398

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000050996A Withdrawn KR20010050283A (ko) 1999-09-02 2000-08-31 유전상수 ｋ가 낮은 유전체의 손상을 최소화하는, 금속플러그를 위한 예비세정 방법

Country Status (6)

Country Link
US (2) US6346489B1 (https=)
EP (1) EP1081750A3 (https=)
JP (1) JP4932075B2 (https=)
KR (1) KR20010050283A (https=)
SG (1) SG93261A1 (https=)
TW (1) TW473846B (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
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KR100912321B1 (ko) * 2003-12-04 2009-08-14 도쿄엘렉트론가부시키가이샤 반도체 기판 도전층 표면의 청정화 방법
KR101276694B1 (ko) * 2003-02-14 2013-06-19 어플라이드 머티어리얼스, 인코포레이티드 수소-함유 라디칼을 이용한 자연 산화물 세정
KR20180018621A (ko) * 2015-09-30 2018-02-21 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 처리 시스템 및 방법

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KR101276694B1 (ko) * 2003-02-14 2013-06-19 어플라이드 머티어리얼스, 인코포레이티드 수소-함유 라디칼을 이용한 자연 산화물 세정
KR100912321B1 (ko) * 2003-12-04 2009-08-14 도쿄엘렉트론가부시키가이샤 반도체 기판 도전층 표면의 청정화 방법
KR20180018621A (ko) * 2015-09-30 2018-02-21 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 처리 시스템 및 방법
US10529553B2 (en) 2015-09-30 2020-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Treatment system and method
US10796898B2 (en) 2015-09-30 2020-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Treatment system and method
US11670500B2 (en) 2015-09-30 2023-06-06 Taiwan Semiconductor Manufacturing Company, Ltd. Treatment system and method

Also Published As

Publication number Publication date
US6589890B2 (en) 2003-07-08
TW473846B (en) 2002-01-21
JP4932075B2 (ja) 2012-05-16
SG93261A1 (en) 2002-12-17
US20020106908A1 (en) 2002-08-08
US6346489B1 (en) 2002-02-12
JP2001203194A (ja) 2001-07-27
EP1081750A3 (en) 2003-02-05
EP1081750A2 (en) 2001-03-07

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