TW473846B - Precleaning process for metal plug that minimizes damage to low-K dielectric - Google Patents

Precleaning process for metal plug that minimizes damage to low-K dielectric Download PDF

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Publication number
TW473846B
TW473846B TW089117952A TW89117952A TW473846B TW 473846 B TW473846 B TW 473846B TW 089117952 A TW089117952 A TW 089117952A TW 89117952 A TW89117952 A TW 89117952A TW 473846 B TW473846 B TW 473846B
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TW
Taiwan
Prior art keywords
patent application
dielectric
scope
item
gas mixture
Prior art date
Application number
TW089117952A
Other languages
English (en)
Chinese (zh)
Inventor
Barney M Cohen
Suraj Rengarajan
Kenny King-Tai Ngan
Original Assignee
Applied Materials Inc
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Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of TW473846B publication Critical patent/TW473846B/zh

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00Cleaning of wafers, substrates or parts of devices
    • H10P70/20Cleaning during device manufacture
    • H10P70/23Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/071Manufacture or treatment of dielectric parts thereof
    • H10W20/081Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts

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  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW089117952A 1999-09-02 2000-09-01 Precleaning process for metal plug that minimizes damage to low-K dielectric TW473846B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/388,991 US6346489B1 (en) 1999-09-02 1999-09-02 Precleaning process for metal plug that minimizes damage to low-κ dielectric

Publications (1)

Publication Number Publication Date
TW473846B true TW473846B (en) 2002-01-21

Family

ID=23536398

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089117952A TW473846B (en) 1999-09-02 2000-09-01 Precleaning process for metal plug that minimizes damage to low-K dielectric

Country Status (6)

Country Link
US (2) US6346489B1 (https=)
EP (1) EP1081750A3 (https=)
JP (1) JP4932075B2 (https=)
KR (1) KR20010050283A (https=)
SG (1) SG93261A1 (https=)
TW (1) TW473846B (https=)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980064441A (ko) * 1996-12-20 1998-10-07 윌리엄비.켐플러 전도물질을 반도체 소자 표면에 선택적으로 결합시키는 방법
US7804115B2 (en) 1998-02-25 2010-09-28 Micron Technology, Inc. Semiconductor constructions having antireflective portions
US6274292B1 (en) * 1998-02-25 2001-08-14 Micron Technology, Inc. Semiconductor processing methods
US7067414B1 (en) * 1999-09-01 2006-06-27 Micron Technology, Inc. Low k interlevel dielectric layer fabrication methods
US7014887B1 (en) * 1999-09-02 2006-03-21 Applied Materials, Inc. Sequential sputter and reactive precleans of vias and contacts
US20050022839A1 (en) * 1999-10-20 2005-02-03 Savas Stephen E. Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing
US6759337B1 (en) * 1999-12-15 2004-07-06 Lsi Logic Corporation Process for etching a controllable thickness of oxide on an integrated circuit structure on a semiconductor substrate using nitrogen plasma and plasma and an rf bias applied to the substrate
US6660646B1 (en) * 2000-09-21 2003-12-09 Northrop Grumman Corporation Method for plasma hardening photoresist in etching of semiconductor and superconductor films
US6573181B1 (en) 2000-10-26 2003-06-03 Applied Materials, Inc. Method of forming contact structures using nitrogen trifluoride preclean etch process and a titanium chemical vapor deposition step
KR100382725B1 (ko) * 2000-11-24 2003-05-09 삼성전자주식회사 클러스터화된 플라즈마 장치에서의 반도체소자의 제조방법
US6818513B2 (en) * 2001-01-30 2004-11-16 Fairchild Semiconductor Corporation Method of forming a field effect transistor having a lateral depletion structure
JP4124315B2 (ja) 2001-05-01 2008-07-23 東京応化工業株式会社 被膜の処理方法およびこの方法を用いた半導体素子の製造方法
US6630406B2 (en) 2001-05-14 2003-10-07 Axcelis Technologies Plasma ashing process
US6951823B2 (en) * 2001-05-14 2005-10-04 Axcelis Technologies, Inc. Plasma ashing process
JP2003045960A (ja) * 2001-08-01 2003-02-14 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2003086569A (ja) * 2001-09-12 2003-03-20 Tokyo Electron Ltd プラズマ処理方法
KR100443084B1 (ko) * 2001-09-21 2004-08-04 삼성전자주식회사 구리 금속막의 연마 방법, 연마장치 및 구리 금속 배선형성 방법
US20030205822A1 (en) * 2002-05-02 2003-11-06 Taiwan Semiconductor Manufacturing Co. Ltd. Low-strength plasma treatment for interconnects
US7125583B2 (en) * 2002-05-23 2006-10-24 Intel Corporation Chemical vapor deposition chamber pre-deposition treatment for improved carbon doped oxide thickness uniformity and throughput
US7247252B2 (en) * 2002-06-20 2007-07-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of avoiding plasma arcing during RIE etching
US20040118697A1 (en) * 2002-10-01 2004-06-24 Applied Materials, Inc. Metal deposition process with pre-cleaning before electrochemical deposition
CN101457338B (zh) * 2003-02-14 2011-04-27 应用材料股份有限公司 利用含氢自由基清洁自生氧化物的方法和设备
US7627780B2 (en) * 2003-04-23 2009-12-01 Dot Hill Systems Corporation Apparatus and method for deterministically performing active-active failover of redundant servers in a network storage appliance
US7565566B2 (en) * 2003-04-23 2009-07-21 Dot Hill Systems Corporation Network storage appliance with an integrated switch
US7401254B2 (en) * 2003-04-23 2008-07-15 Dot Hill Systems Corporation Apparatus and method for a server deterministically killing a redundant server integrated within the same network storage appliance chassis
US7676600B2 (en) * 2003-04-23 2010-03-09 Dot Hill Systems Corporation Network, storage appliance, and method for externalizing an internal I/O link between a server and a storage controller integrated within the storage appliance chassis
US8580076B2 (en) * 2003-05-22 2013-11-12 Lam Research Corporation Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith
KR100542031B1 (ko) * 2003-05-30 2006-01-11 피에스케이 주식회사 반도체 제조공정에서의 포토레지스트 제거방법
EP1691403A4 (en) * 2003-12-04 2009-04-15 Tokyo Electron Ltd METHOD FOR CLEANING THE CONDUCTIVE COATING SURFACE OF A SEMICONDUCTOR SUBSTRATE
DE102004002464B4 (de) * 2004-01-16 2005-12-08 Infineon Technologies Ag Verfahren zum Füllen von Kontaktlöchern
US7144828B2 (en) * 2004-01-30 2006-12-05 Chartered Semiconductor Manufacturing Ltd. He treatment to improve low-k adhesion property
JP2006013190A (ja) 2004-06-28 2006-01-12 Rohm Co Ltd 半導体装置の製造方法
US20070186953A1 (en) * 2004-07-12 2007-08-16 Savas Stephen E Systems and Methods for Photoresist Strip and Residue Treatment in Integrated Circuit Manufacturing
KR100634262B1 (ko) * 2005-03-05 2006-10-13 삼성전자주식회사 복합 유전막을 갖는 반도체 장치의 제조 방법
KR100712818B1 (ko) * 2005-12-16 2007-04-30 동부일렉트로닉스 주식회사 구리 배선 형성 방법
US7416989B1 (en) 2006-06-30 2008-08-26 Novellus Systems, Inc. Adsorption based material removal process
US7789965B2 (en) * 2006-09-19 2010-09-07 Asm Japan K.K. Method of cleaning UV irradiation chamber
US7745335B2 (en) * 2006-12-21 2010-06-29 Texas Instruments Incorporated Semiconductor device manufactured by reducing hillock formation in metal interconnects
US20080153282A1 (en) * 2006-12-21 2008-06-26 Texas Instruments, Incorporated Method for preparing a metal feature surface
US20080170352A1 (en) 2007-01-15 2008-07-17 Seiko Epson Corporation Capacitor and its manufacturing method
JP2008251889A (ja) * 2007-03-30 2008-10-16 Seiko Epson Corp キャパシタの製造方法
US7977249B1 (en) 2007-03-07 2011-07-12 Novellus Systems, Inc. Methods for removing silicon nitride and other materials during fabrication of contacts
US20080289650A1 (en) * 2007-05-24 2008-11-27 Asm America, Inc. Low-temperature cleaning of native oxide
US8084356B2 (en) 2007-09-29 2011-12-27 Lam Research Corporation Methods of low-K dielectric and metal process integration
US8187486B1 (en) 2007-12-13 2012-05-29 Novellus Systems, Inc. Modulating etch selectivity and etch rate of silicon nitride thin films
US7871937B2 (en) 2008-05-16 2011-01-18 Asm America, Inc. Process and apparatus for treating wafers
US7981763B1 (en) 2008-08-15 2011-07-19 Novellus Systems, Inc. Atomic layer removal for high aspect ratio gapfill
KR101350020B1 (ko) * 2008-12-08 2014-01-13 후지쯔 가부시끼가이샤 반도체 장치의 제조방법
US8058179B1 (en) 2008-12-23 2011-11-15 Novellus Systems, Inc. Atomic layer removal process with higher etch amount
US20100270262A1 (en) * 2009-04-22 2010-10-28 Applied Materials, Inc. Etching low-k dielectric or removing resist with a filtered ionized gas
WO2011043163A1 (en) 2009-10-05 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9518715B2 (en) * 2010-02-12 2016-12-13 Cree, Inc. Lighting devices that comprise one or more solid state light emitters
CN103474342A (zh) * 2012-06-06 2013-12-25 中芯国际集成电路制造(上海)有限公司 修复介质层损伤的方法
CN104143523A (zh) * 2013-05-06 2014-11-12 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
US20150064921A1 (en) * 2013-08-30 2015-03-05 Applied Materials, Inc. Low temperature plasma anneal process for sublimative etch processes
GB201316446D0 (en) * 2013-09-16 2013-10-30 Spts Technologies Ltd Pre-cleaning a semiconductor structure
KR102110247B1 (ko) 2013-11-29 2020-05-13 삼성전자주식회사 관통전극을 갖는 반도체 소자 및 그 제조방법
US9299557B2 (en) 2014-03-19 2016-03-29 Asm Ip Holding B.V. Plasma pre-clean module and process
JP6435667B2 (ja) * 2014-07-01 2018-12-12 東京エレクトロン株式会社 エッチング方法、エッチング装置及び記憶媒体
US9474163B2 (en) 2014-12-30 2016-10-18 Asm Ip Holding B.V. Germanium oxide pre-clean module and process
US9431268B2 (en) 2015-01-05 2016-08-30 Lam Research Corporation Isotropic atomic layer etch for silicon and germanium oxides
US9425041B2 (en) 2015-01-06 2016-08-23 Lam Research Corporation Isotropic atomic layer etch for silicon oxides using no activation
US10373850B2 (en) 2015-03-11 2019-08-06 Asm Ip Holding B.V. Pre-clean chamber and process with substrate tray for changing substrate temperature
CN107924833B (zh) 2015-08-17 2021-11-09 株式会社爱发科 基板处理方法及基板处理装置
US10312075B2 (en) 2015-09-30 2019-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Treatment system and method
TWI726951B (zh) * 2015-12-17 2021-05-11 美商應用材料股份有限公司 處理氮化物膜之方法
US10535566B2 (en) * 2016-04-28 2020-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
JP2019192892A (ja) 2018-04-18 2019-10-31 東京エレクトロン株式会社 処理システムおよび処理方法
WO2019226341A1 (en) 2018-05-25 2019-11-28 Lam Research Corporation Thermal atomic layer etch with rapid temperature cycling
US11637022B2 (en) 2018-07-09 2023-04-25 Lam Research Corporation Electron excitation atomic layer etch
US10714329B2 (en) * 2018-09-28 2020-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Pre-clean for contacts
JP7465979B2 (ja) * 2020-03-10 2024-04-11 アプライド マテリアルズ インコーポレイテッド 選択的な酸化および簡略化された前洗浄
CN114141631A (zh) * 2020-09-03 2022-03-04 长鑫存储技术有限公司 金属连线的制备方法
WO2022169509A1 (en) 2021-02-03 2022-08-11 Lam Research Corporation Etch selectivity control in atomic layer etching
US20230268223A1 (en) * 2022-02-24 2023-08-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of manufacture

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56155526A (en) * 1980-05-06 1981-12-01 Shunpei Yamazaki Method of forming film
US5043299B1 (en) 1989-12-01 1997-02-25 Applied Materials Inc Process for selective deposition of tungsten on semiconductor wafer
US5202008A (en) 1990-03-02 1993-04-13 Applied Materials, Inc. Method for preparing a shield to reduce particles in a physical vapor deposition chamber
US5352636A (en) 1992-01-16 1994-10-04 Applied Materials, Inc. In situ method for cleaning silicon surface and forming layer thereon in same chamber
JPH07115130A (ja) * 1993-10-14 1995-05-02 Toshiba Corp 半導体装置の製造方法
US5453157A (en) * 1994-05-16 1995-09-26 Texas Instruments Incorporated Low temperature anisotropic ashing of resist for semiconductor fabrication
US5660682A (en) * 1996-03-14 1997-08-26 Lsi Logic Corporation Plasma clean with hydrogen gas
US5788778A (en) 1996-09-16 1998-08-04 Applied Komatsu Technology, Inc. Deposition chamber cleaning technique using a high power remote excitation source
JP3959790B2 (ja) * 1997-08-26 2007-08-15 ソニー株式会社 半導体装置の製造方法
US6107192A (en) 1997-12-30 2000-08-22 Applied Materials, Inc. Reactive preclean prior to metallization for sub-quarter micron application
US7053002B2 (en) * 1998-12-04 2006-05-30 Applied Materials, Inc Plasma preclean with argon, helium, and hydrogen gases
US6114259A (en) * 1999-07-27 2000-09-05 Lsi Logic Corporation Process for treating exposed surfaces of a low dielectric constant carbon doped silicon oxide dielectric material to protect the material from damage
US6281135B1 (en) 1999-08-05 2001-08-28 Axcelis Technologies, Inc. Oxygen free plasma stripping process

Also Published As

Publication number Publication date
US6589890B2 (en) 2003-07-08
JP4932075B2 (ja) 2012-05-16
SG93261A1 (en) 2002-12-17
US20020106908A1 (en) 2002-08-08
KR20010050283A (ko) 2001-06-15
US6346489B1 (en) 2002-02-12
JP2001203194A (ja) 2001-07-27
EP1081750A3 (en) 2003-02-05
EP1081750A2 (en) 2001-03-07

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