JP4932075B2 - 低κ誘電体に対する損傷を最小にする金属プラグの事前清浄化方法 - Google Patents

低κ誘電体に対する損傷を最小にする金属プラグの事前清浄化方法 Download PDF

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JP4932075B2
JP4932075B2 JP2000306813A JP2000306813A JP4932075B2 JP 4932075 B2 JP4932075 B2 JP 4932075B2 JP 2000306813 A JP2000306813 A JP 2000306813A JP 2000306813 A JP2000306813 A JP 2000306813A JP 4932075 B2 JP4932075 B2 JP 4932075B2
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dielectric
metal conductor
region
workpiece
plasma
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JP2001203194A (ja
JP2001203194A5 (https=
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エム コーエン バーニー
レンガラジャン スラジ
キング タイ ンガン ケニー
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Applied Materials Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts

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  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2000306813A 1999-09-02 2000-09-01 低κ誘電体に対する損傷を最小にする金属プラグの事前清浄化方法 Expired - Lifetime JP4932075B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/388991 1999-09-02
US09/388,991 US6346489B1 (en) 1999-09-02 1999-09-02 Precleaning process for metal plug that minimizes damage to low-κ dielectric

Publications (3)

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JP2001203194A JP2001203194A (ja) 2001-07-27
JP2001203194A5 JP2001203194A5 (https=) 2007-10-25
JP4932075B2 true JP4932075B2 (ja) 2012-05-16

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JP2000306813A Expired - Lifetime JP4932075B2 (ja) 1999-09-02 2000-09-01 低κ誘電体に対する損傷を最小にする金属プラグの事前清浄化方法

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US (2) US6346489B1 (https=)
EP (1) EP1081750A3 (https=)
JP (1) JP4932075B2 (https=)
KR (1) KR20010050283A (https=)
SG (1) SG93261A1 (https=)
TW (1) TW473846B (https=)

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Also Published As

Publication number Publication date
US6589890B2 (en) 2003-07-08
TW473846B (en) 2002-01-21
SG93261A1 (en) 2002-12-17
US20020106908A1 (en) 2002-08-08
KR20010050283A (ko) 2001-06-15
US6346489B1 (en) 2002-02-12
JP2001203194A (ja) 2001-07-27
EP1081750A3 (en) 2003-02-05
EP1081750A2 (en) 2001-03-07

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