KR20000057603A - 웨이퍼 리프터 시스템에 의한 웨이퍼 방전 제어 - Google Patents

웨이퍼 리프터 시스템에 의한 웨이퍼 방전 제어 Download PDF

Info

Publication number
KR20000057603A
KR20000057603A KR1019990705387A KR19997005387A KR20000057603A KR 20000057603 A KR20000057603 A KR 20000057603A KR 1019990705387 A KR1019990705387 A KR 1019990705387A KR 19997005387 A KR19997005387 A KR 19997005387A KR 20000057603 A KR20000057603 A KR 20000057603A
Authority
KR
South Korea
Prior art keywords
substrate
chuck
resistor
lifting
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019990705387A
Other languages
English (en)
Korean (ko)
Inventor
라진더 디하인사
스티븐 프나척
카롤로스 만자닐라
켄이. 토쿠나가
Original Assignee
로브그렌 리차드 에이치.
램 리서치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 로브그렌 리차드 에이치., 램 리서치 코포레이션 filed Critical 로브그렌 리차드 에이치.
Publication of KR20000057603A publication Critical patent/KR20000057603A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H10P72/50—
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H10P72/72—
    • H10P72/722—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/915—Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dowels (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
KR1019990705387A 1996-12-19 1997-12-18 웨이퍼 리프터 시스템에 의한 웨이퍼 방전 제어 Ceased KR20000057603A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/769,433 US5904779A (en) 1996-12-19 1996-12-19 Wafer electrical discharge control by wafer lifter system
US8/769,433 1996-12-19

Publications (1)

Publication Number Publication Date
KR20000057603A true KR20000057603A (ko) 2000-09-25

Family

ID=25085430

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990705387A Ceased KR20000057603A (ko) 1996-12-19 1997-12-18 웨이퍼 리프터 시스템에 의한 웨이퍼 방전 제어

Country Status (7)

Country Link
US (1) US5904779A (enExample)
EP (2) EP1435646B1 (enExample)
JP (1) JP4101299B2 (enExample)
KR (1) KR20000057603A (enExample)
AT (2) ATE299293T1 (enExample)
DE (2) DE69738590T2 (enExample)
WO (1) WO1998027577A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12040216B2 (en) 2020-08-10 2024-07-16 Semes Co., Ltd. Substrate supporting member, substrate treating apparatus including the same and substrate treating method thereof

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5955858A (en) 1997-02-14 1999-09-21 Applied Materials, Inc. Mechanically clamping robot wrist
JPH10284360A (ja) 1997-04-02 1998-10-23 Hitachi Ltd 基板温度制御装置及び方法
US6177023B1 (en) 1997-07-11 2001-01-23 Applied Komatsu Technology, Inc. Method and apparatus for electrostatically maintaining substrate flatness
JP3374743B2 (ja) * 1998-03-05 2003-02-10 日本電気株式会社 基板熱処理装置及び同装置からの基板の分離方法
US6146504A (en) 1998-05-21 2000-11-14 Applied Materials, Inc. Substrate support and lift apparatus and method
JP4394778B2 (ja) * 1999-09-22 2010-01-06 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
KR100503897B1 (ko) * 2000-02-19 2005-07-25 엘지.필립스 엘시디 주식회사 건식식각 장치의 기판 파손방지 방법 및 건식식각 장치
JP3549188B2 (ja) * 2000-03-27 2004-08-04 日本エー・エス・エム株式会社 半導体基板への薄膜成膜方法
KR100378187B1 (ko) * 2000-11-09 2003-03-29 삼성전자주식회사 정전척을 구비한 웨이퍼 지지대 및 이를 이용한 웨이퍼 디척킹 방법
US6646857B2 (en) * 2001-03-30 2003-11-11 Lam Research Corporation Semiconductor wafer lifting device and methods for implementing the same
US6673636B2 (en) * 2001-05-18 2004-01-06 Applied Materails Inc. Method of real-time plasma charging voltage measurement on powered electrode with electrostatic chuck in plasma process chambers
US7232591B2 (en) * 2002-04-09 2007-06-19 Matsushita Electric Industrial Co., Ltd. Method of using an adhesive for temperature control during plasma processing
JP2005064284A (ja) * 2003-08-14 2005-03-10 Asm Japan Kk 半導体基板保持装置
US7129731B2 (en) * 2003-09-02 2006-10-31 Thermal Corp. Heat pipe with chilled liquid condenser system for burn-in testing
US20050067146A1 (en) * 2003-09-02 2005-03-31 Thayer John Gilbert Two phase cooling system method for burn-in testing
US20050067147A1 (en) * 2003-09-02 2005-03-31 Thayer John Gilbert Loop thermosyphon for cooling semiconductors during burn-in testing
US7013956B2 (en) * 2003-09-02 2006-03-21 Thermal Corp. Heat pipe evaporator with porous valve
KR20080107473A (ko) * 2004-11-04 2008-12-10 가부시키가이샤 알박 정전 척 장치
CN100362645C (zh) * 2005-12-07 2008-01-16 北京北方微电子基地设备工艺研究中心有限责任公司 顶针装置
US8270142B2 (en) * 2008-12-10 2012-09-18 Axcelis Technologies, Inc. De-clamping wafers from an electrostatic chuck
US8360844B2 (en) * 2010-03-13 2013-01-29 Marc B Schwartz Multiple wager, multiple potential winning outcome gaming platform
US9595464B2 (en) * 2014-07-19 2017-03-14 Applied Materials, Inc. Apparatus and method for reducing substrate sliding in process chambers
US11387135B2 (en) * 2016-01-28 2022-07-12 Applied Materials, Inc. Conductive wafer lift pin o-ring gripper with resistor
US20190088518A1 (en) * 2017-09-20 2019-03-21 Applied Materials, Inc. Substrate support with cooled and conducting pins
WO2022180723A1 (ja) 2021-02-25 2022-09-01 株式会社日立ハイテク プラズマ処理装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0439000B1 (en) * 1990-01-25 1994-09-14 Applied Materials, Inc. Electrostatic clamp and method
JP3230821B2 (ja) * 1991-01-28 2001-11-19 株式会社東芝 プッシャーピン付き静電チャック
JP3182615B2 (ja) * 1991-04-15 2001-07-03 アネルバ株式会社 プラズマ処理方法および装置
JP3027781B2 (ja) * 1992-02-13 2000-04-04 東京エレクトロン株式会社 プラズマ処理方法
JPH05275517A (ja) * 1992-03-30 1993-10-22 Fujitsu Ltd 基板離脱方法
JP3264391B2 (ja) * 1993-05-17 2002-03-11 東京エレクトロン株式会社 静電吸着体の離脱装置
US5557215A (en) * 1993-05-12 1996-09-17 Tokyo Electron Limited Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus
JPH06338463A (ja) * 1993-05-28 1994-12-06 Toshiba Corp 半導体製造装置
JPH077072A (ja) * 1993-06-17 1995-01-10 Anelva Corp 静電チャック装置における基板の脱着方法および脱着機構
JP2817585B2 (ja) * 1993-09-10 1998-10-30 住友金属工業株式会社 試料の離脱方法
US5463525A (en) * 1993-12-20 1995-10-31 International Business Machines Corporation Guard ring electrostatic chuck
US5467249A (en) * 1993-12-20 1995-11-14 International Business Machines Corporation Electrostatic chuck with reference electrode
US5535507A (en) * 1993-12-20 1996-07-16 International Business Machines Corporation Method of making electrostatic chuck with oxide insulator
US5459632A (en) * 1994-03-07 1995-10-17 Applied Materials, Inc. Releasing a workpiece from an electrostatic chuck
JP3608121B2 (ja) * 1994-03-18 2005-01-05 アネルバ株式会社 基板の機械的脱離機構およびその機構を用いた脱離方法
JPH08107139A (ja) * 1994-10-05 1996-04-23 Hitachi Ltd 絶縁性リング部材およびそれを用いた半導体製造装置
JPH08236601A (ja) * 1995-02-22 1996-09-13 Mitsubishi Electric Corp 静電チャック装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12040216B2 (en) 2020-08-10 2024-07-16 Semes Co., Ltd. Substrate supporting member, substrate treating apparatus including the same and substrate treating method thereof

Also Published As

Publication number Publication date
DE69738590T2 (de) 2009-04-23
JP4101299B2 (ja) 2008-06-18
US5904779A (en) 1999-05-18
EP1435646A2 (en) 2004-07-07
EP1435646B1 (en) 2008-03-19
ATE299293T1 (de) 2005-07-15
DE69733697D1 (de) 2005-08-11
EP0948805A1 (en) 1999-10-13
DE69738590D1 (de) 2008-04-30
JP2001506808A (ja) 2001-05-22
EP0948805B1 (en) 2005-07-06
ATE389946T1 (de) 2008-04-15
DE69733697T2 (de) 2006-05-24
EP1435646A3 (en) 2006-05-10
WO1998027577A1 (en) 1998-06-25

Similar Documents

Publication Publication Date Title
KR20000057603A (ko) 웨이퍼 리프터 시스템에 의한 웨이퍼 방전 제어
CN1743501B (zh) 用于释放基材的方法及设备
US4624728A (en) Pin lift plasma processing
US5460684A (en) Stage having electrostatic chuck and plasma processing apparatus using same
US5834824A (en) Use of conductive particles in a nonconductive body as an integrated circuit antifuse
US7821767B2 (en) Electrostatic chuck device
CN1258812C (zh) 半导体晶片举升装置以及实施方法
US5880924A (en) Electrostatic chuck capable of rapidly dechucking a substrate
KR100916953B1 (ko) 세라믹 정전척 조립체 및 그 제조방법
JP4421874B2 (ja) プラズマ処理装置及びプラズマ処理方法
JP2001007190A (ja) 多層電極を有する薄板状セラミック及び製造方法
JPH05211227A (ja) 改良された静電気放電特性を備えた真空ピペット用チップ
KR102565879B1 (ko) 제어된 컨택 랜딩을 갖는 mems rf-스위치
JPH06244147A (ja) プラズマ処理装置
JPH09199578A (ja) 静電吸着電極およびそれを用いたプラズマ処理装置
JPH06244146A (ja) プラズマ処理装置
JPH11354633A (ja) 半導体装置の製造方法
WO2003038891A1 (de) Elektrostatische wafer-haltevorrichtung
WO2001084624A2 (en) Semiconductor lift pin for dechucking substrates
US6096658A (en) Semiconductor device having in-doped indium oxide etch stop
Karulkar A closed system fabrication of chromium silicide thin film resistors
KR100267465B1 (ko) 광로 조절 장치의 변형부 형성방법
JPH09330974A (ja) 静電吸着電極
JPH1079417A (ja) 静電吸着電極及びプラズマ処理装置

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000