KR19980071125A - 광산 발생제를 포함하는 반사 방지 피복 조성물 - Google Patents
광산 발생제를 포함하는 반사 방지 피복 조성물 Download PDFInfo
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- KR19980071125A KR19980071125A KR1019980003372A KR19980003372A KR19980071125A KR 19980071125 A KR19980071125 A KR 19980071125A KR 1019980003372 A KR1019980003372 A KR 1019980003372A KR 19980003372 A KR19980003372 A KR 19980003372A KR 19980071125 A KR19980071125 A KR 19980071125A
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- South Korea
- Prior art keywords
- antireflective
- antireflective composition
- photoresist
- photoacid generator
- composition
- Prior art date
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Classifications
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- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/46—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
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- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2383/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
- C08J2383/04—Polysiloxanes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/127—Spectral sensitizer containing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/128—Radiation-activated cross-linking agent containing
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Abstract
Description
Claims (19)
- 수지 결합제(1), 산 또는 열적 산 발생제(2) 및 광산 발생제 화합물(3)을 포함하는, 피복된 감광성 내식막 조성물과 함께 사용하기 위한 반사 방지 피복 조성물.
- 제1항에 있어서, 광산 발생제 화합물이 약 110 내지 175℃의 온도에서 약 1분 이상 동안의 노광시에 실질적으로 안정한 반사 방지 조성물.
- 제1항에 있어서, 광산 발생제 화합물이 유효량의 원(deep) UV 방사선에 노광시에 산을 발생하는 반사 방지 조성물.
- 제1항에 있어서, 수지 결합제가 안트라세닐 단위를 포함하는 반사 방지 조성물.
- 제1항에 있어서, 가교제를 추가로 포함하는 반사 방지 조성물.
- 제5항에 있어서, 가교제가 아민계 물질인 반사 방지 조성물.
- 제1항의 반사 방지 조성물로 이루어진 피복층(1)과 감광성 내식막 피복층(2)을 포함하는 피복된 기판.
- 제7항에 있어서, 감광성 내식막이 반사 방지층 위에 피복되어 있는, 피복된 기판.
- 제7항에 있어서, 감광성 내식막이 수지 결합제와 광산 발생제 화합물을 포함하는 화학적으로 증폭된 포지티브 작용성 감광성 내식막인 피복된 기판.
- 제7항에 있어서, 반사 방지 조성물 광산 발생제 화합물과 감광성 내식막 광산 발생제 화합물이 각각 활성 방사선에 노광시에 실질적으로 동일한 산 화합물을 발생하는 피복된 기판.
- 제7항에 있어서, 반사 방지 조성물 광산 발생제 화합물과 감광성 내식막 광산 발생제 화합물이 활성 방사선에 노광시에 동일한 산 화합물을 각각 발생하는 피복된 기판.
- 제11항에 있어서, 반사 방지 조성물 광산 발생제 화합물과 감광성 내식막 광산 발생제 화합물이 활성 방사선에 노광시에 설포네이트 산을 각각 발생하는 피복된 기판.
- 제8항에 있어서, 기판이 마이크로전자 웨이퍼, 경판(flat panel) 표시 소자 기판 또는 광학 전자 기판인 피복된 기판.
- 수지 결합제, 광산 발생제 화합물 및 필수적으로 가교제 성분을 함유하지 않는 반사 방지 조성물을 포함하는 반사 방지 조성물의 피복층(1)과 감광성 내식막 피복층(2)을 포함하는 피복된 기판.
- 광산 발생제 화합물을 포함하는 반사 방지 조성물 층을 기판에 도포하는 단계(a),반사 방지 조성물 층 위에 감광성 내식막 층을 도포하는 단계(b),감광성 내식막 층을 활성 방사선에 노광시켜 반사 방지 조성물의 광산 발생제가 산을 발생하는 단계(c) 및노광된 감광성 내식막 층을 현상하는 단계(d)를 포함하는, 감광성 내식막 릴리프 화상의 제조방법.
- 제15항에 있어서, 반사 방지층이 감광성 내식막 조성물 층을 도포하기 전에 열적으로 경화되는 방법.
- 제16항에 있어서, 반사 방지 조성물의 광산 발생제가 반사 방지층의 열경화 동안 실질적으로 활성화되지 않는 방법.
- 제15항에 있어서, 감광성 내식막 층의 노광이 감광성 내식막 층에서 릴리프 잠상(latent relif image)을 규정짓는 방법.
- 제15항에 있어서, 반사 방지 조성물 층이 감광성 내식막 층을 활성 방사선에 노광시키기 전에 광산 발생제에 대해 활성인 방사선에 노광되지 않는 방법.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US08/797741 | 1997-02-07 | ||
US08/797,741 US5939236A (en) | 1997-02-07 | 1997-02-07 | Antireflective coating compositions comprising photoacid generators |
US8/797,741 | 1997-02-07 |
Publications (2)
Publication Number | Publication Date |
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KR19980071125A true KR19980071125A (ko) | 1998-10-26 |
KR100537381B1 KR100537381B1 (ko) | 2006-03-27 |
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Application Number | Title | Priority Date | Filing Date |
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KR1019980003372A KR100537381B1 (ko) | 1997-02-07 | 1998-02-06 | 광산 발생제를 포함하는 반사 방지 조성물, 당해 조성물과 감광성 내식막이 피복된 기판 및 감광성 내식막 릴리프 화상의 형성방법 |
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US (3) | US5939236A (ko) |
JP (1) | JP3408415B2 (ko) |
KR (1) | KR100537381B1 (ko) |
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KR100537381B1 (ko) | 2006-03-27 |
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JPH11133618A (ja) | 1999-05-21 |
US6849373B2 (en) | 2005-02-01 |
US5939236A (en) | 1999-08-17 |
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