KR19980018207A - 투영 노광 장치 및 그 투영 노광 장치에 사용되는 투영 광하계 및 디바이스 제조 방법 - Google Patents

투영 노광 장치 및 그 투영 노광 장치에 사용되는 투영 광하계 및 디바이스 제조 방법 Download PDF

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Publication number
KR19980018207A
KR19980018207A KR1019970034760A KR19970034760A KR19980018207A KR 19980018207 A KR19980018207 A KR 19980018207A KR 1019970034760 A KR1019970034760 A KR 1019970034760A KR 19970034760 A KR19970034760 A KR 19970034760A KR 19980018207 A KR19980018207 A KR 19980018207A
Authority
KR
South Korea
Prior art keywords
lens
lens group
negative
positive
object side
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019970034760A
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English (en)
Korean (ko)
Inventor
카즈마사 엔도
Original Assignee
고노 시게오
니콘 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 고노 시게오, 니콘 코포레이션 filed Critical 고노 시게오
Publication of KR19980018207A publication Critical patent/KR19980018207A/ko
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7025—Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/24—Optical objectives specially designed for the purposes specified below for reproducing or copying at short object distances
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1019970034760A 1996-08-08 1997-07-24 투영 노광 장치 및 그 투영 노광 장치에 사용되는 투영 광하계 및 디바이스 제조 방법 Withdrawn KR19980018207A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP209892/1996 1996-08-08
JP20989296A JP3864399B2 (ja) 1996-08-08 1996-08-08 投影露光装置及び該投影露光装置に用いられる投影光学系並びにデバイス製造方法

Publications (1)

Publication Number Publication Date
KR19980018207A true KR19980018207A (ko) 1998-06-05

Family

ID=16580383

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970034760A Withdrawn KR19980018207A (ko) 1996-08-08 1997-07-24 투영 노광 장치 및 그 투영 노광 장치에 사용되는 투영 광하계 및 디바이스 제조 방법

Country Status (3)

Country Link
US (1) US5903400A (enExample)
JP (1) JP3864399B2 (enExample)
KR (1) KR19980018207A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030038427A (ko) * 2001-11-05 2003-05-16 가부시키가이샤 니콘 투영 광학계, 노광 장치 및 디바이스의 제조 방법

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JP3925576B2 (ja) 1997-07-24 2007-06-06 株式会社ニコン 投影光学系、該光学系を備えた露光装置、及び該装置を用いたデバイスの製造方法
JPH1195095A (ja) 1997-09-22 1999-04-09 Nikon Corp 投影光学系
US6700645B1 (en) 1998-01-22 2004-03-02 Nikon Corporation Projection optical system and exposure apparatus and method
JPH11214293A (ja) 1998-01-22 1999-08-06 Nikon Corp 投影光学系及び該光学系を備えた露光装置並びにデバイス製造方法
DE19855157A1 (de) * 1998-11-30 2000-05-31 Zeiss Carl Fa Projektionsobjektiv
US6600550B1 (en) * 1999-06-03 2003-07-29 Nikon Corporation Exposure apparatus, a photolithography method, and a device manufactured by the same
US6710930B2 (en) 1999-12-01 2004-03-23 Nikon Corporation Illumination optical system and method of making exposure apparatus
TW448307B (en) * 1999-12-21 2001-08-01 Zeiss Stiftung Optical projection system
US6815129B1 (en) * 2000-09-26 2004-11-09 Euv Llc Compensation of flare-induced CD changes EUVL
JP2002244034A (ja) 2001-02-21 2002-08-28 Nikon Corp 投影光学系および該投影光学系を備えた露光装置
JP2002323652A (ja) 2001-02-23 2002-11-08 Nikon Corp 投影光学系，該投影光学系を備えた投影露光装置および投影露光方法
US8208198B2 (en) * 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
US20080151364A1 (en) * 2004-01-14 2008-06-26 Carl Zeiss Smt Ag Catadioptric projection objective
KR20170129271A (ko) 2004-05-17 2017-11-24 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
DE102005024290A1 (de) * 2005-05-27 2006-11-30 Carl Zeiss Smt Ag Abbildungssystem, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
US8654307B2 (en) * 2006-03-20 2014-02-18 Nikon Corporation Scanning type exposure apparatus, method of manufacturing micro-apparatus, mask, projection optical apparatus, and method of manufacturing mask
JP4952182B2 (ja) 2006-03-20 2012-06-13 株式会社ニコン 走査型露光装置、マイクロデバイスの製造方法、走査露光方法、及びマスク
EP2101209A1 (en) * 2006-05-05 2009-09-16 Carl Zeiss SMT AG Symmetrical objective having four lens groups for microlithography
CN100547448C (zh) * 2007-11-21 2009-10-07 上海微电子装备有限公司 一种投影光学系统及投影曝光装置
TW201113553A (en) * 2009-10-13 2011-04-16 Young Optics Inc Fixed-focus lens
JP5903809B2 (ja) * 2011-09-06 2016-04-13 リソテック株式会社 投影光学系
CN109856915B (zh) * 2017-11-30 2020-07-14 上海微电子装备（集团）股份有限公司 光刻投影物镜、边缘曝光系统和边缘曝光装置
CN110068910B (zh) * 2018-01-24 2021-08-13 信泰光学(深圳)有限公司 镜头组
CN109656092B (zh) * 2019-01-07 2024-04-12 中国科学院福建物质结构研究所 一种紫外中继分幅光学系统以及紫外分幅相机

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US3504961A (en) * 1968-04-01 1970-04-07 Perkin Elmer Corp Modified double gauss objective
US3897138A (en) * 1971-11-24 1975-07-29 Canon Kk Projection lens for mask pattern printing
JPS5336326B2 (enExample) * 1972-12-26 1978-10-02
JPS581763B2 (ja) * 1978-06-19 1983-01-12 旭光学工業株式会社 回折限界の解像力を有する等倍複写用レンズ
JPS58147708A (ja) * 1982-02-26 1983-09-02 Nippon Kogaku Kk <Nikon> 照明用光学装置
US4666273A (en) * 1983-10-05 1987-05-19 Nippon Kogaku K. K. Automatic magnification correcting system in a projection optical apparatus
GB2153543B (en) * 1983-12-28 1988-09-01 Canon Kk A projection exposure apparatus
US4811055A (en) * 1984-02-27 1989-03-07 Canon Kabushiki Kaisha Projection exposure apparatus
US4772107A (en) * 1986-11-05 1988-09-20 The Perkin-Elmer Corporation Wide angle lens with improved flat field characteristics
JPH0812329B2 (ja) * 1986-11-06 1996-02-07 株式会社シグマ 投影レンズ
US4770477A (en) * 1986-12-04 1988-09-13 The Perkin-Elmer Corporation Lens usable in the ultraviolet
US4918583A (en) * 1988-04-25 1990-04-17 Nikon Corporation Illuminating optical device
US5105075A (en) * 1988-09-19 1992-04-14 Canon Kabushiki Kaisha Projection exposure apparatus
JP3041939B2 (ja) * 1990-10-22 2000-05-15 株式会社ニコン 投影レンズ系
JP3353902B2 (ja) * 1990-12-12 2002-12-09 オリンパス光学工業株式会社 投影レンズ系
US5172275A (en) * 1990-12-14 1992-12-15 Eastman Kodak Company Apochromatic relay lens systems suitable for use in a high definition telecine apparatus
JPH04369209A (ja) * 1991-06-17 1992-12-22 Nikon Corp 露光用照明装置
JP3298131B2 (ja) * 1991-10-24 2002-07-02 株式会社ニコン 縮小投影レンズ
JPH06313845A (ja) * 1993-04-28 1994-11-08 Olympus Optical Co Ltd 投影レンズ系
JP3396935B2 (ja) * 1993-11-15 2003-04-14 株式会社ニコン 投影光学系及び投影露光装置
JP3360387B2 (ja) * 1993-11-15 2002-12-24 株式会社ニコン 投影光学系及び投影露光装置
US5696631A (en) * 1996-02-22 1997-12-09 Anvik Corporation Unit magnification projection lens system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030038427A (ko) * 2001-11-05 2003-05-16 가부시키가이샤 니콘 투영 광학계, 노광 장치 및 디바이스의 제조 방법

Also Published As

Publication number Publication date
US5903400A (en) 1999-05-11
JPH1054936A (ja) 1998-02-24
JP3864399B2 (ja) 2006-12-27

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19970724

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid