KR102904259B1 - 기억 장치 - Google Patents

기억 장치

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Publication number
KR102904259B1
KR102904259B1 KR1020217027126A KR20217027126A KR102904259B1 KR 102904259 B1 KR102904259 B1 KR 102904259B1 KR 1020217027126 A KR1020217027126 A KR 1020217027126A KR 20217027126 A KR20217027126 A KR 20217027126A KR 102904259 B1 KR102904259 B1 KR 102904259B1
Authority
KR
South Korea
Prior art keywords
oxide
insulator
transistor
wiring
layer
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020217027126A
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English (en)
Korean (ko)
Other versions
KR20210121143A (ko
Inventor
슈헤이 나가츠카
다츠야 오누키
기요시 가토
슌페이 야마자키
šœ페이 야마자키
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20210121143A publication Critical patent/KR20210121143A/ko
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020217027126A 2019-01-29 2019-11-18 기억 장치 Active KR102904259B1 (ko)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JPJP-P-2019-012887 2019-01-29
JP2019013607 2019-01-29
JPJP-P-2019-013607 2019-01-29
JP2019012887 2019-01-29
JP2019021404 2019-02-08
JPJP-P-2019-021404 2019-02-08
JPJP-P-2019-091842 2019-05-15
JP2019091842 2019-05-15
PCT/IB2019/059859 WO2020157553A1 (ja) 2019-01-29 2019-11-18 記憶装置

Publications (2)

Publication Number Publication Date
KR20210121143A KR20210121143A (ko) 2021-10-07
KR102904259B1 true KR102904259B1 (ko) 2025-12-24

Family

ID=71841365

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217027126A Active KR102904259B1 (ko) 2019-01-29 2019-11-18 기억 장치

Country Status (6)

Country Link
US (1) US12069846B2 (https=)
JP (2) JP7361730B2 (https=)
KR (1) KR102904259B1 (https=)
CN (1) CN113330554B (https=)
TW (1) TWI846763B (https=)
WO (1) WO2020157553A1 (https=)

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JP7581209B2 (ja) * 2019-08-08 2024-11-12 株式会社半導体エネルギー研究所 半導体装置
KR20220050134A (ko) 2019-08-22 2022-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 메모리 셀 및 기억 장치
KR20240093546A (ko) 2021-10-27 2024-06-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
WO2023144653A1 (ja) * 2022-01-28 2023-08-03 株式会社半導体エネルギー研究所 記憶装置
US20250131949A1 (en) * 2022-01-28 2025-04-24 Semiconductor Energy Laboratory Co., Ltd. Storage Device
KR20240152330A (ko) * 2022-02-10 2024-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제작 방법
JPWO2023156883A1 (https=) * 2022-02-18 2023-08-24
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JPWO2023223126A1 (https=) * 2022-05-16 2023-11-23
US11984165B2 (en) 2022-05-24 2024-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device with reduced area
US20250098187A1 (en) * 2023-09-18 2025-03-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor memory cell structure including a hydrogen absorption layer

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US20140312402A1 (en) 2011-04-15 2014-10-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device

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Also Published As

Publication number Publication date
CN113330554B (zh) 2025-06-06
TWI846763B (zh) 2024-07-01
JP2023181189A (ja) 2023-12-21
KR20210121143A (ko) 2021-10-07
CN113330554A (zh) 2021-08-31
WO2020157553A1 (ja) 2020-08-06
JPWO2020157553A1 (https=) 2020-08-06
US20220085020A1 (en) 2022-03-17
US12069846B2 (en) 2024-08-20
JP7361730B2 (ja) 2023-10-16
TW202030730A (zh) 2020-08-16

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