JPWO2023156883A1 - - Google Patents
Info
- Publication number
- JPWO2023156883A1 JPWO2023156883A1 JP2024500696A JP2024500696A JPWO2023156883A1 JP WO2023156883 A1 JPWO2023156883 A1 JP WO2023156883A1 JP 2024500696 A JP2024500696 A JP 2024500696A JP 2024500696 A JP2024500696 A JP 2024500696A JP WO2023156883 A1 JPWO2023156883 A1 JP WO2023156883A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022023944 | 2022-02-18 | ||
| PCT/IB2023/051094 WO2023156883A1 (ja) | 2022-02-18 | 2023-02-08 | 半導体装置、及び半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023156883A1 true JPWO2023156883A1 (https=) | 2023-08-24 |
| JPWO2023156883A5 JPWO2023156883A5 (https=) | 2026-01-29 |
Family
ID=87577751
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024500696A Pending JPWO2023156883A1 (https=) | 2022-02-18 | 2023-02-08 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250151254A1 (https=) |
| JP (1) | JPWO2023156883A1 (https=) |
| KR (1) | KR20240152314A (https=) |
| CN (1) | CN118696612A (https=) |
| WO (1) | WO2023156883A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025078928A1 (ja) * | 2023-10-13 | 2025-04-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2018220471A1 (ja) * | 2017-06-02 | 2020-05-21 | 株式会社半導体エネルギー研究所 | 記憶装置及びその動作方法 |
| US11997846B2 (en) * | 2018-07-06 | 2024-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US12069846B2 (en) * | 2019-01-29 | 2024-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Memory device |
| TWI842855B (zh) * | 2019-03-29 | 2024-05-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
| CN114424339A (zh) | 2019-09-20 | 2022-04-29 | 株式会社半导体能源研究所 | 半导体装置及半导体装置的制造方法 |
-
2023
- 2023-02-08 CN CN202380021550.9A patent/CN118696612A/zh active Pending
- 2023-02-08 WO PCT/IB2023/051094 patent/WO2023156883A1/ja not_active Ceased
- 2023-02-08 JP JP2024500696A patent/JPWO2023156883A1/ja active Pending
- 2023-02-08 KR KR1020247026976A patent/KR20240152314A/ko active Pending
- 2023-02-08 US US18/838,009 patent/US20250151254A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20250151254A1 (en) | 2025-05-08 |
| KR20240152314A (ko) | 2024-10-21 |
| CN118696612A (zh) | 2024-09-24 |
| WO2023156883A1 (ja) | 2023-08-24 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20260121 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20260121 |