KR102551117B1 - 이방성 도전 필름 및 그의 제조 방법 - Google Patents

이방성 도전 필름 및 그의 제조 방법 Download PDF

Info

Publication number
KR102551117B1
KR102551117B1 KR1020217042801A KR20217042801A KR102551117B1 KR 102551117 B1 KR102551117 B1 KR 102551117B1 KR 1020217042801 A KR1020217042801 A KR 1020217042801A KR 20217042801 A KR20217042801 A KR 20217042801A KR 102551117 B1 KR102551117 B1 KR 102551117B1
Authority
KR
South Korea
Prior art keywords
connection layer
layer
conductive particles
anisotropic conductive
conductive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020217042801A
Other languages
English (en)
Korean (ko)
Other versions
KR20220003131A (ko
Inventor
세이이찌로 시노하라
Original Assignee
데쿠세리아루즈 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 데쿠세리아루즈 가부시키가이샤 filed Critical 데쿠세리아루즈 가부시키가이샤
Publication of KR20220003131A publication Critical patent/KR20220003131A/ko
Application granted granted Critical
Publication of KR102551117B1 publication Critical patent/KR102551117B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/02—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by a sequence of laminating steps, e.g. by adding new layers at consecutive laminating stations
    • B32B37/025—Transfer laminating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
    • B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
    • B32B3/263—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by a layer having non-uniform thickness
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/06—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the heating method
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/24—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/0008—Electrical discharge treatment, e.g. corona, plasma treatment; wave energy or particle radiation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/24—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
    • B32B2037/243—Coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2305/00—Condition, form or state of the layers or laminate
    • B32B2305/30—Fillers, e.g. particles, powders, beads, flakes, spheres, chips
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/202—Conductive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/27001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
    • H01L2224/27003—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for holding or transferring the layer preform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/27001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
    • H01L2224/27005—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for aligning the layer connector, e.g. marks, spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29075—Plural core members
    • H01L2224/29076—Plural core members being mutually engaged together, e.g. through inserts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29075—Plural core members
    • H01L2224/2908—Plural core members being stacked
    • H01L2224/29082—Two-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29075—Plural core members
    • H01L2224/2908—Plural core members being stacked
    • H01L2224/29083—Three-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29344—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29355—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29357—Cobalt [Co] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29364—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29499—Shape or distribution of the fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
    • H05K1/0373—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement containing additives, e.g. fillers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0206—Materials
    • H05K2201/0215—Metallic fillers
    • H10W72/01304—
    • H10W72/074—
    • H10W72/321—
    • H10W72/322—
    • H10W72/325—
    • H10W72/351—
    • H10W72/352—
    • H10W72/354—
    • H10W74/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24521—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness with component conforming to contour of nonplanar surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Fluid Mechanics (AREA)
  • Thermal Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Laminated Bodies (AREA)
  • Combinations Of Printed Boards (AREA)
  • Wire Bonding (AREA)
  • Conductive Materials (AREA)
KR1020217042801A 2012-08-24 2013-08-23 이방성 도전 필름 및 그의 제조 방법 Active KR102551117B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2012184833 2012-08-24
JPJP-P-2012-184833 2012-08-24
KR1020197036321A KR102345819B1 (ko) 2012-08-24 2013-08-23 이방성 도전 필름 및 그의 제조 방법
PCT/JP2013/072571 WO2014030744A1 (ja) 2012-08-24 2013-08-23 異方性導電フィルム及びその製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020197036321A Division KR102345819B1 (ko) 2012-08-24 2013-08-23 이방성 도전 필름 및 그의 제조 방법

Publications (2)

Publication Number Publication Date
KR20220003131A KR20220003131A (ko) 2022-01-07
KR102551117B1 true KR102551117B1 (ko) 2023-07-05

Family

ID=50150047

Family Applications (4)

Application Number Title Priority Date Filing Date
KR1020217042801A Active KR102551117B1 (ko) 2012-08-24 2013-08-23 이방성 도전 필름 및 그의 제조 방법
KR1020147035905A Active KR101716945B1 (ko) 2012-08-24 2013-08-23 이방성 도전 필름 및 그의 제조 방법
KR1020197036321A Active KR102345819B1 (ko) 2012-08-24 2013-08-23 이방성 도전 필름 및 그의 제조 방법
KR1020177006454A Active KR102056086B1 (ko) 2012-08-24 2013-08-23 이방성 도전 필름 및 그의 제조 방법

Family Applications After (3)

Application Number Title Priority Date Filing Date
KR1020147035905A Active KR101716945B1 (ko) 2012-08-24 2013-08-23 이방성 도전 필름 및 그의 제조 방법
KR1020197036321A Active KR102345819B1 (ko) 2012-08-24 2013-08-23 이방성 도전 필름 및 그의 제조 방법
KR1020177006454A Active KR102056086B1 (ko) 2012-08-24 2013-08-23 이방성 도전 필름 및 그의 제조 방법

Country Status (6)

Country Link
US (3) US20150214176A1 (enExample)
JP (5) JP6024620B2 (enExample)
KR (4) KR102551117B1 (enExample)
CN (3) CN104541411B (enExample)
TW (6) TWI655084B (enExample)
WO (1) WO2014030744A1 (enExample)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102551117B1 (ko) * 2012-08-24 2023-07-05 데쿠세리아루즈 가부시키가이샤 이방성 도전 필름 및 그의 제조 방법
WO2014030753A1 (ja) 2012-08-24 2014-02-27 デクセリアルズ株式会社 異方性導電フィルムの製造方法及び異方性導電フィルム
WO2015076234A1 (ja) * 2013-11-19 2015-05-28 デクセリアルズ株式会社 異方導電性フィルム及び接続構造体
US11195813B2 (en) * 2014-02-04 2021-12-07 Dexerials Corporation Anisotropic conductive film and production method of the same
JP7052254B2 (ja) 2016-11-04 2022-04-12 デクセリアルズ株式会社 フィラー含有フィルム
KR101956221B1 (ko) * 2014-10-28 2019-03-08 데쿠세리아루즈 가부시키가이샤 이방성 도전 필름, 그 제조 방법, 및 접속 구조체
JP6750228B2 (ja) 2015-01-13 2020-09-02 デクセリアルズ株式会社 バンプ形成用フィルム、半導体装置及びその製造方法、並びに接続構造体
JP6458503B2 (ja) * 2015-01-13 2019-01-30 デクセリアルズ株式会社 異方性導電フィルム、その製造方法及び接続構造体
TWI694128B (zh) * 2015-01-13 2020-05-21 日商迪睿合股份有限公司 異向導電性膜
KR102449287B1 (ko) 2015-05-27 2022-09-29 데쿠세리아루즈 가부시키가이샤 이방 도전성 필름 및 접속 구조체
JP7114857B2 (ja) * 2016-02-15 2022-08-09 デクセリアルズ株式会社 異方性導電フィルム、その製造方法及び接続構造体
JP2017191688A (ja) * 2016-04-12 2017-10-19 デクセリアルズ株式会社 電気特性の検査方法
JP6889020B2 (ja) * 2016-05-02 2021-06-18 デクセリアルズ株式会社 異方性導電フィルムの製造方法、及び異方性導電フィルム
WO2017191772A1 (ja) * 2016-05-05 2017-11-09 デクセリアルズ株式会社 フィラー配置フィルム
WO2018051799A1 (ja) 2016-09-13 2018-03-22 デクセリアルズ株式会社 フィラー含有フィルム
JP7081097B2 (ja) 2016-09-13 2022-06-07 デクセリアルズ株式会社 フィラー含有フィルム
JP6187665B1 (ja) * 2016-10-18 2017-08-30 デクセリアルズ株式会社 異方性導電フィルム
KR102652055B1 (ko) 2016-10-18 2024-03-27 데쿠세리아루즈 가부시키가이샤 필러 함유 필름
US20200299474A1 (en) * 2016-10-18 2020-09-24 Dexerials Corporation Filler-containing film
JP7035370B2 (ja) 2016-10-31 2022-03-15 デクセリアルズ株式会社 フィラー含有フィルム
KR102282081B1 (ko) * 2016-11-30 2021-07-27 데쿠세리아루즈 가부시키가이샤 도전 입자 배치 필름, 그 제조 방법, 검사 프로브 유닛, 도통 검사 방법
WO2018101106A1 (ja) * 2016-12-01 2018-06-07 デクセリアルズ株式会社 異方性導電フィルム
TWI763750B (zh) * 2016-12-01 2022-05-11 日商迪睿合股份有限公司 異向性導電膜
JP7039883B2 (ja) 2016-12-01 2022-03-23 デクセリアルズ株式会社 異方性導電フィルム
CN109964371B (zh) * 2016-12-01 2021-03-12 迪睿合株式会社 各向异性导电膜
CN109983543B (zh) * 2017-03-30 2021-07-02 积水化学工业株式会社 导电性粒子、导电材料以及连接结构体
CN109273143A (zh) * 2017-07-18 2019-01-25 玮锋科技股份有限公司 异向性导电薄膜的制作方法
JP7066998B2 (ja) 2017-08-23 2022-05-16 デクセリアルズ株式会社 スペーサ含有テープ
JP7062389B2 (ja) 2017-08-23 2022-05-06 デクセリアルズ株式会社 異方性導電フィルム
US12247270B2 (en) * 2018-06-26 2025-03-11 Resonac Corporation Anisotropic conductive film and method for producing the anisotropic conductive film including a base material having recesses and solder particles formed inside the recesses
TWI835813B (zh) 2018-06-26 2024-03-21 日商力森諾科股份有限公司 焊料粒
KR102254467B1 (ko) * 2018-07-12 2021-05-21 에이치엔에스하이텍(주) 이방도전성 접착필름의 제조방법
CN108882552A (zh) * 2018-08-10 2018-11-23 武汉华星光电半导体显示技术有限公司 导电胶及电路板的邦定方法
KR102238223B1 (ko) * 2018-08-28 2021-04-09 성균관대학교산학협력단 비등방성 접착 고분자를 이용한 디웨팅 유도 플립-칩 본딩 방법
US11240918B2 (en) * 2018-08-28 2022-02-01 Research And Business Foundation Sungkyunkwan University Method for flip-chip bonding using anisotropic adhesive polymer
CN112017806A (zh) * 2019-05-29 2020-12-01 玮锋科技股份有限公司 导电膜制作方法
WO2022102672A1 (ja) * 2020-11-12 2022-05-19 昭和電工マテリアルズ株式会社 回路接続用接着剤フィルム及びその製造方法、並びに、接続構造体及びその製造方法
WO2022230638A1 (ja) 2021-04-26 2022-11-03 キヤノン株式会社 電子写真用部材とその製造方法、プロセスカートリッジ及び電子写真画像形成装置
JP2024146277A (ja) * 2023-03-31 2024-10-15 デクセリアルズ株式会社 フィラー配列フィルム及びその製造方法並びに接続構造体及びその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003286456A (ja) 2002-03-28 2003-10-10 Asahi Kasei Corp 異方性を有する導電性接着シートおよびその製造方法
JP2003286457A (ja) 2002-03-28 2003-10-10 Asahi Kasei Corp 異方導電性接着シートおよびその製造方法

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3786214B2 (ja) * 1994-05-10 2006-06-14 日立化成工業株式会社 異方導電性樹脂フィルム状成形物の製法
US6034331A (en) 1996-07-23 2000-03-07 Hitachi Chemical Company, Ltd. Connection sheet and electrode connection structure for electrically interconnecting electrodes facing each other, and method using the connection sheet
WO1998038701A1 (fr) 1997-02-27 1998-09-03 Seiko Epson Corporation Structure de connexion, dispositif a cristaux liquides, equipement electronique, adhesif conducteur anisotrope, et procede de production d'un tel adhesif
JP4289319B2 (ja) * 1997-03-31 2009-07-01 日立化成工業株式会社 回路接続材料並びに回路端子の接続構造及び接続方法
JP3678547B2 (ja) * 1997-07-24 2005-08-03 ソニーケミカル株式会社 多層異方導電性接着剤およびその製造方法
JP3491595B2 (ja) 2000-02-25 2004-01-26 ソニーケミカル株式会社 異方導電性接着フィルム
JP3995942B2 (ja) * 2002-01-29 2007-10-24 旭化成株式会社 異方性を有する導電性接着シートの製造方法
US20030178221A1 (en) 2002-03-21 2003-09-25 Chiu Cindy Chia-Wen Anisotropically conductive film
KR101131229B1 (ko) 2004-01-30 2012-03-28 세키스이가가쿠 고교가부시키가이샤 도전성 미립자 및 이방성 도전 재료
JP2005235530A (ja) * 2004-02-18 2005-09-02 Hitachi Chem Co Ltd 回路接続材料
JP4385794B2 (ja) 2004-02-26 2009-12-16 ソニーケミカル＆インフォメーションデバイス株式会社 異方性導電接続方法
KR100673778B1 (ko) 2005-08-19 2007-01-24 제일모직주식회사 저온 속경화형 이방성 도전 필름용 조성물, 그로부터제조된 이방성 도전 필름 및 그 제조방법
US8247701B2 (en) * 2006-04-27 2012-08-21 Asahi Kasei Emd Corporation Electroconductive particle placement sheet and anisotropic electroconductive film
JP4789738B2 (ja) 2006-07-28 2011-10-12 旭化成イーマテリアルズ株式会社 異方導電性フィルム
US7923488B2 (en) 2006-10-16 2011-04-12 Trillion Science, Inc. Epoxy compositions
JP5143449B2 (ja) * 2007-03-02 2013-02-13 株式会社ダイセル 熱又は活性エネルギー線硬化型接着剤
EP2001047A1 (en) 2007-06-07 2008-12-10 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
CN101849322B (zh) * 2007-09-20 2012-07-04 索尼化学&信息部件株式会社 各向异性导电膜及其制造方法、以及使用该各向异性导电膜的接合体
CN101897245B (zh) * 2007-12-17 2013-03-13 日立化成工业株式会社 电路连接材料及电路部件的连接结构
CN102090154B (zh) * 2008-07-11 2014-11-05 迪睿合电子材料有限公司 各向异性导电薄膜
JP2010033793A (ja) 2008-07-28 2010-02-12 Tokai Rubber Ind Ltd 粒子転写膜の製造方法
JP5558140B2 (ja) 2009-06-10 2014-07-23 デクセリアルズ株式会社 絶縁性樹脂フィルム、並びにこれを用いた接合体及びその製造方法
JP4673933B2 (ja) 2009-08-26 2011-04-20 積水化学工業株式会社 異方性導電材料及び接続構造体
JP5400545B2 (ja) 2009-09-25 2014-01-29 積水化学工業株式会社 異方性導電材料、接続構造体の製造方法及び接続構造体
KR101666214B1 (ko) * 2009-11-05 2016-10-14 삼성디스플레이 주식회사 이방성 도전 필름, 이의 제조 방법 및 이를 포함하는 표시 장치
BR112012011692B1 (pt) * 2009-11-16 2020-11-17 Hitachi Chemical Company, Ltd material de conexão de circuito e estrutura de conexão para membro de circuito usando o mesmo
JP5565277B2 (ja) 2010-11-09 2014-08-06 デクセリアルズ株式会社 異方性導電フィルム
KR20170044766A (ko) * 2012-08-01 2017-04-25 데쿠세리아루즈 가부시키가이샤 이방성 도전 필름의 제조 방법, 이방성 도전 필름, 및 접속 구조체
WO2014030753A1 (ja) * 2012-08-24 2014-02-27 デクセリアルズ株式会社 異方性導電フィルムの製造方法及び異方性導電フィルム
KR102551117B1 (ko) * 2012-08-24 2023-07-05 데쿠세리아루즈 가부시키가이샤 이방성 도전 필름 및 그의 제조 방법
KR20140139902A (ko) 2013-05-28 2014-12-08 삼성디스플레이 주식회사 이방성 도전 필름 적층체, 이를 포함하는 표시 장치 및 표시 장치 제조 방법
JP2016201405A (ja) * 2015-04-08 2016-12-01 三菱電機株式会社 炭化珪素半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003286456A (ja) 2002-03-28 2003-10-10 Asahi Kasei Corp 異方性を有する導電性接着シートおよびその製造方法
JP2003286457A (ja) 2002-03-28 2003-10-10 Asahi Kasei Corp 異方導電性接着シートおよびその製造方法

Also Published As

Publication number Publication date
TWI651192B (zh) 2019-02-21
JP6840105B2 (ja) 2021-03-10
TW201431674A (zh) 2014-08-16
US11404391B2 (en) 2022-08-02
US20150214176A1 (en) 2015-07-30
CN104541411A (zh) 2015-04-22
KR102345819B1 (ko) 2022-01-03
TWI655084B (zh) 2019-04-01
TWI728136B (zh) 2021-05-21
JP7315865B2 (ja) 2023-07-27
TW201736115A (zh) 2017-10-16
JP6372543B2 (ja) 2018-08-15
TW202132110A (zh) 2021-09-01
WO2014030744A1 (ja) 2014-02-27
JP6024620B2 (ja) 2016-11-16
US11784154B2 (en) 2023-10-10
HK1205366A1 (en) 2015-12-11
JP7024771B2 (ja) 2022-02-24
JP2017017040A (ja) 2017-01-19
CN104541411B (zh) 2018-07-27
TWI810551B (zh) 2023-08-01
JP2014060150A (ja) 2014-04-03
TWI728334B (zh) 2021-05-21
KR102056086B1 (ko) 2019-12-16
TW201922488A (zh) 2019-06-16
KR20220003131A (ko) 2022-01-07
US20220262760A1 (en) 2022-08-18
KR20190140089A (ko) 2019-12-18
TW202118628A (zh) 2021-05-16
CN109166649B (zh) 2021-04-13
CN109166649A (zh) 2019-01-08
KR20150048670A (ko) 2015-05-07
TWI810505B (zh) 2023-08-01
CN109334132B (zh) 2022-02-25
TW201736114A (zh) 2017-10-16
JP2022044046A (ja) 2022-03-16
KR20170029659A (ko) 2017-03-15
JP2020024932A (ja) 2020-02-13
US20200091105A1 (en) 2020-03-19
JP2018160461A (ja) 2018-10-11
KR101716945B1 (ko) 2017-03-15
CN109334132A (zh) 2019-02-15

Similar Documents

Publication Publication Date Title
KR102551117B1 (ko) 이방성 도전 필름 및 그의 제조 방법
JP7170612B2 (ja) 異方性導電フィルムの製造方法及び異方性導電フィルム
HK1240961A1 (en) Anisotropic conductive film manufacturing method and anisotropic conductive film
HK1240962A1 (en) Method of producing anisotropic conductive film and anisotropic conductive film
HK1205364B (en) Anisotropic-conductive-film manufacturing method and anisotropic conductive film

Legal Events

Date Code Title Description
A107 Divisional application of patent
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A16-div-PA0104

St.27 status event code: A-0-1-A10-A18-div-PA0104

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

Fee payment year number: 1

St.27 status event code: A-2-2-U10-U12-oth-PR1002

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000