KR102526306B1 - 반도체 제조 방법 및 플라즈마 처리 장치 - Google Patents

반도체 제조 방법 및 플라즈마 처리 장치 Download PDF

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KR102526306B1
KR102526306B1 KR1020180021733A KR20180021733A KR102526306B1 KR 102526306 B1 KR102526306 B1 KR 102526306B1 KR 1020180021733 A KR1020180021733 A KR 1020180021733A KR 20180021733 A KR20180021733 A KR 20180021733A KR 102526306 B1 KR102526306 B1 KR 102526306B1
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film
gas
chamber
vapor pressure
organic film
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KR20180099504A (ko
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미치코 나카야
마사노부 혼다
도루 히사마츠
마사히로 다바타
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020180021733A 2017-02-28 2018-02-23 반도체 제조 방법 및 플라즈마 처리 장치 Active KR102526306B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2017036891 2017-02-28
JPJP-P-2017-036891 2017-02-28
JP2017201978A JP6742287B2 (ja) 2017-02-28 2017-10-18 半導体製造方法及びプラズマ処理装置
JPJP-P-2017-201978 2017-10-18

Publications (2)

Publication Number Publication Date
KR20180099504A KR20180099504A (ko) 2018-09-05
KR102526306B1 true KR102526306B1 (ko) 2023-04-26

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KR1020180021733A Active KR102526306B1 (ko) 2017-02-28 2018-02-23 반도체 제조 방법 및 플라즈마 처리 장치

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JP (1) JP6742287B2 (enExample)
KR (1) KR102526306B1 (enExample)
TW (1) TWI761455B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7410065B2 (ja) 2020-03-19 2024-01-09 信越化学工業株式会社 生体電極、生体電極の製造方法及び生体信号の測定方法
JP7096279B2 (ja) 2020-03-25 2022-07-05 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置、プログラム、および基板処理方法
JP7507136B2 (ja) 2020-11-05 2024-06-27 信越化学工業株式会社 生体電極組成物、生体電極、及び生体電極の製造方法
JP7627671B2 (ja) 2021-04-16 2025-02-06 信越化学工業株式会社 生体電極組成物、生体電極、及び生体電極の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100215460A1 (en) * 2007-11-09 2010-08-26 Canon Anelva Corporation Inline-type wafer conveyance device
JP2011151057A (ja) 2010-01-19 2011-08-04 Fujitsu Semiconductor Ltd 半導体装置の製造方法

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JP2002270586A (ja) * 2001-03-08 2002-09-20 Tokyo Electron Ltd 有機系絶縁膜のエッチング方法およびデュアルダマシンプロセス
KR20050055074A (ko) * 2003-10-07 2005-06-13 삼성전자주식회사 기상 불산 식각 과정을 이용한 얕은 트렌치 소자 분리형성 방법
JP5047504B2 (ja) * 2005-02-05 2012-10-10 三星電子株式会社 ビアキャッピング保護膜を使用する半導体素子のデュアルダマシン配線の製造方法
US7803719B2 (en) * 2006-02-24 2010-09-28 Freescale Semiconductor, Inc. Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and passivating coupling material comprising multiple organic components for use in a semiconductor device
JP2010114255A (ja) * 2008-11-06 2010-05-20 Toshiba Corp 半導体装置の製造方法
JP2011134771A (ja) * 2009-12-22 2011-07-07 Fujitsu Semiconductor Ltd 半導体装置及びその製造方法
JP5490753B2 (ja) * 2010-07-29 2014-05-14 東京エレクトロン株式会社 トレンチの埋め込み方法および成膜システム
JP5937632B2 (ja) 2014-02-06 2016-06-22 東京エレクトロン株式会社 基板処理方法、前処理装置、後処理装置、基板処理システムおよび記憶媒体
JP6022490B2 (ja) 2013-08-27 2016-11-09 東京エレクトロン株式会社 基板処理方法、基板処理システムおよび記憶媒体
JP6140576B2 (ja) 2013-08-27 2017-05-31 東京エレクトロン株式会社 基板処理方法、基板処理システムおよび記憶媒体
TWI739285B (zh) * 2014-02-04 2021-09-11 荷蘭商Ａｓｍ Ｉｐ控股公司 金屬、金屬氧化物與介電質的選擇性沉積
JP6308067B2 (ja) * 2014-07-29 2018-04-11 富士通セミコンダクター株式会社 半導体装置の製造方法
US10049921B2 (en) * 2014-08-20 2018-08-14 Lam Research Corporation Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor
JP6425517B2 (ja) 2014-11-28 2018-11-21 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100215460A1 (en) * 2007-11-09 2010-08-26 Canon Anelva Corporation Inline-type wafer conveyance device
JP2011151057A (ja) 2010-01-19 2011-08-04 Fujitsu Semiconductor Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
KR20180099504A (ko) 2018-09-05
JP2018142691A (ja) 2018-09-13
JP6742287B2 (ja) 2020-08-19
TWI761455B (zh) 2022-04-21
TW201837982A (zh) 2018-10-16

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