KR102523731B1 - 완전히 자기 정렬된 비아를 형성하기 위한 선택적 퇴적 방법 - Google Patents

완전히 자기 정렬된 비아를 형성하기 위한 선택적 퇴적 방법 Download PDF

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KR102523731B1
KR102523731B1 KR1020180143516A KR20180143516A KR102523731B1 KR 102523731 B1 KR102523731 B1 KR 102523731B1 KR 1020180143516 A KR1020180143516 A KR 1020180143516A KR 20180143516 A KR20180143516 A KR 20180143516A KR 102523731 B1 KR102523731 B1 KR 102523731B1
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substrate
gas
metal layer
silanol
exposing
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KR20190058342A (ko
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칸다바라 엔. 타필리
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도쿄엘렉트론가부시키가이샤
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    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
    • H10W20/0693Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs by forming self-aligned vias
    • HELECTRICITY
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    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
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    • H10W20/071Manufacture or treatment of dielectric parts thereof
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