KR102523731B1 - 완전히 자기 정렬된 비아를 형성하기 위한 선택적 퇴적 방법 - Google Patents
완전히 자기 정렬된 비아를 형성하기 위한 선택적 퇴적 방법 Download PDFInfo
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- KR102523731B1 KR102523731B1 KR1020180143516A KR20180143516A KR102523731B1 KR 102523731 B1 KR102523731 B1 KR 102523731B1 KR 1020180143516 A KR1020180143516 A KR 1020180143516A KR 20180143516 A KR20180143516 A KR 20180143516A KR 102523731 B1 KR102523731 B1 KR 102523731B1
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- H10W20/071—Manufacture or treatment of dielectric parts thereof
- H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
- H10W20/083—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being via holes penetrating underlying conductors
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- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
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- H—ELECTRICITY
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- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
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- H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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- H10W20/071—Manufacture or treatment of dielectric parts thereof
- H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
- H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning
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- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
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- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
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- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7621—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting two or more semiconductor substrates
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| US20170092533A1 (en) | 2015-09-29 | 2017-03-30 | Applied Materials, Inc. | Selective silicon dioxide deposition using phosphonic acid self assembled monolayers as nucleation inhibitor |
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Also Published As
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|---|---|
| KR20190058342A (ko) | 2019-05-29 |
| US20210074584A1 (en) | 2021-03-11 |
| TWI788463B (zh) | 2023-01-01 |
| TWI798290B (zh) | 2023-04-11 |
| TW202328473A (zh) | 2023-07-16 |
| JP7193990B2 (ja) | 2022-12-21 |
| KR20190058343A (ko) | 2019-05-29 |
| US20190157149A1 (en) | 2019-05-23 |
| TW201930626A (zh) | 2019-08-01 |
| JP2019096881A (ja) | 2019-06-20 |
| TWI899549B (zh) | 2025-10-01 |
| JP7287770B2 (ja) | 2023-06-06 |
| US20190164749A1 (en) | 2019-05-30 |
| KR102491746B1 (ko) | 2023-01-25 |
| TW201930625A (zh) | 2019-08-01 |
| US11658068B2 (en) | 2023-05-23 |
| US10586734B2 (en) | 2020-03-10 |
| JP2019096877A (ja) | 2019-06-20 |
| US10847363B2 (en) | 2020-11-24 |
| KR20220132493A (ko) | 2022-09-30 |
| KR102549289B1 (ko) | 2023-06-29 |
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