KR102499902B1 - 촬상 장치 및 전자 기기 - Google Patents

촬상 장치 및 전자 기기 Download PDF

Info

Publication number
KR102499902B1
KR102499902B1 KR1020170179731A KR20170179731A KR102499902B1 KR 102499902 B1 KR102499902 B1 KR 102499902B1 KR 1020170179731 A KR1020170179731 A KR 1020170179731A KR 20170179731 A KR20170179731 A KR 20170179731A KR 102499902 B1 KR102499902 B1 KR 102499902B1
Authority
KR
South Korea
Prior art keywords
circuit
transistor
register
parameter
image processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020170179731A
Other languages
English (en)
Korean (ko)
Other versions
KR20180076346A (ko
Inventor
다카유키 이케다
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20180076346A publication Critical patent/KR20180076346A/ko
Priority to KR1020230015883A priority Critical patent/KR20230026364A/ko
Application granted granted Critical
Publication of KR102499902B1 publication Critical patent/KR102499902B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/709—Circuitry for control of the power supply
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H01L27/14612—
    • H01L27/14683—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/532—Control of the integration time by controlling global shutters in CMOS SSIS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767—Horizontal readout lines, multiplexers or registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Studio Devices (AREA)
  • Image Processing (AREA)
KR1020170179731A 2016-12-27 2017-12-26 촬상 장치 및 전자 기기 Active KR102499902B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020230015883A KR20230026364A (ko) 2016-12-27 2023-02-07 촬상 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016252967 2016-12-27
JPJP-P-2016-252967 2016-12-27

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020230015883A Division KR20230026364A (ko) 2016-12-27 2023-02-07 촬상 장치

Publications (2)

Publication Number Publication Date
KR20180076346A KR20180076346A (ko) 2018-07-05
KR102499902B1 true KR102499902B1 (ko) 2023-02-16

Family

ID=62630224

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020170179731A Active KR102499902B1 (ko) 2016-12-27 2017-12-26 촬상 장치 및 전자 기기
KR1020230015883A Abandoned KR20230026364A (ko) 2016-12-27 2023-02-07 촬상 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020230015883A Abandoned KR20230026364A (ko) 2016-12-27 2023-02-07 촬상 장치

Country Status (4)

Country Link
US (1) US10455174B2 (https=)
JP (2) JP6961479B2 (https=)
KR (2) KR102499902B1 (https=)
CN (2) CN113660439A (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7007257B2 (ja) 2016-03-18 2022-01-24 株式会社半導体エネルギー研究所 撮像装置、モジュール、および電子機器
KR102769490B1 (ko) 2018-06-21 2025-02-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치 및 그 동작 방법, 및 전자 기기
CN118922006A (zh) 2018-07-17 2024-11-08 索尼半导体解决方案公司 摄像元件、层叠型摄像元件和固态摄像装置
JP7298373B2 (ja) * 2019-07-31 2023-06-27 株式会社リコー 光電変換装置、画像読取装置、及び画像形成装置
JP7693550B2 (ja) * 2019-09-11 2025-06-17 株式会社半導体エネルギー研究所 撮像装置
WO2021048683A1 (ja) 2019-09-13 2021-03-18 株式会社半導体エネルギー研究所 撮像装置、撮像モジュール、電子機器及び撮像方法
JP2021072313A (ja) * 2019-10-29 2021-05-06 キオクシア株式会社 半導体記憶装置
JP7414569B2 (ja) * 2020-02-12 2024-01-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
JP2024139129A (ja) * 2023-03-27 2024-10-09 株式会社ジャパンディスプレイ マトリックス基板及び画像表示装置

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100456441B1 (ko) * 2002-01-18 2004-11-09 주식회사 휴맥스 저장 매체에 저장된 서비스의 중지 시점부터 서비스를제공하는 방법 및 장치
JP4146654B2 (ja) * 2002-02-28 2008-09-10 株式会社リコー 画像処理回路、複合画像処理回路、および、画像形成装置
JP3810419B2 (ja) * 2004-12-07 2006-08-16 松下電器産業株式会社 再構成可能な信号処理プロセッサ
JP4450737B2 (ja) * 2005-01-11 2010-04-14 富士通株式会社 半導体集積回路
JP4536618B2 (ja) * 2005-08-02 2010-09-01 富士通セミコンダクター株式会社 リコンフィグ可能な集積回路装置
JP5064747B2 (ja) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
JP5078246B2 (ja) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
CN100477743C (zh) * 2006-04-03 2009-04-08 索尼株式会社 摄像装置及其光源推断装置
JP2008233122A (ja) * 2007-03-16 2008-10-02 Sony Corp 表示装置、表示装置の駆動方法および電子機器
US7863930B2 (en) * 2007-11-13 2011-01-04 Panasonic Corporation Programmable device, control method of device and information processing system
CN102301413A (zh) * 2009-02-02 2011-12-28 松下电器产业株式会社 影像信号处理装置、影像信号处理系统及影像信号处理方法
KR101645680B1 (ko) 2009-11-06 2016-08-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
EP2887395B1 (en) 2009-11-20 2019-05-08 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
JP5508836B2 (ja) * 2009-12-24 2014-06-04 株式会社メガチップス 設定制御装置、および設定制御装置の動作方法
KR102459005B1 (ko) 2009-12-25 2022-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 메모리 장치, 반도체 장치, 및 전자 장치
KR101473684B1 (ko) 2009-12-25 2014-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011089808A1 (en) * 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI525614B (zh) 2011-01-05 2016-03-11 半導體能源研究所股份有限公司 儲存元件、儲存裝置、及信號處理電路
JP5883699B2 (ja) * 2011-04-13 2016-03-15 株式会社半導体エネルギー研究所 プログラマブルｌｓｉ
KR101818671B1 (ko) * 2011-04-19 2018-02-28 삼성전자주식회사 불휘발성 메모리 장치, 불휘발성 메모리 시스템 및 그것의 랜덤 데이터 읽기 방법
TWI536502B (zh) 2011-05-13 2016-06-01 半導體能源研究所股份有限公司 記憶體電路及電子裝置
US8669781B2 (en) * 2011-05-31 2014-03-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI639150B (zh) * 2011-11-30 2018-10-21 Semiconductor Energy Laboratory Co., Ltd. 半導體顯示裝置
JP6046514B2 (ja) 2012-03-01 2016-12-14 株式会社半導体エネルギー研究所 半導体装置
US8754693B2 (en) 2012-03-05 2014-06-17 Semiconductor Energy Laboratory Co., Ltd. Latch circuit and semiconductor device
JP6227890B2 (ja) 2012-05-02 2017-11-08 株式会社半導体エネルギー研究所 信号処理回路および制御回路
US8785928B2 (en) 2012-05-31 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9343120B2 (en) 2012-06-01 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. High speed processing unit with non-volatile register
JP6185311B2 (ja) * 2012-07-20 2017-08-23 株式会社半導体エネルギー研究所 電源制御回路、及び信号処理回路
WO2014061761A1 (en) 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Microcontroller and method for manufacturing the same
JP5604700B2 (ja) * 2012-10-29 2014-10-15 弘一 関根 動き検出用撮像装置、動き検出カメラおよび動き検出システム
KR102112364B1 (ko) * 2012-12-06 2020-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US20150008428A1 (en) * 2013-07-08 2015-01-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR20150014007A (ko) * 2013-07-25 2015-02-06 삼성전자주식회사 이미지 센서 및 이를 포함하는 촬상 장치
JP6541360B2 (ja) 2014-02-07 2019-07-10 株式会社半導体エネルギー研究所 半導体装置
JP6489757B2 (ja) * 2014-04-08 2019-03-27 キヤノン株式会社 画像処理装置、その制御方法及びプログラム
JP2016127471A (ja) * 2015-01-06 2016-07-11 株式会社半導体エネルギー研究所 撮像装置、及びそれを備える電気機器
US9912897B2 (en) 2015-05-11 2018-03-06 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
CN205193998U (zh) * 2015-10-30 2016-04-27 重庆金鑫智慧科技有限公司 一种物联网的家居警报装置
US20170365209A1 (en) 2016-06-17 2017-12-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic device

Also Published As

Publication number Publication date
JP7185744B2 (ja) 2022-12-07
US10455174B2 (en) 2019-10-22
KR20230026364A (ko) 2023-02-24
JP2018107799A (ja) 2018-07-05
JP2022009069A (ja) 2022-01-14
US20180184030A1 (en) 2018-06-28
CN108307131A (zh) 2018-07-20
CN108307131B (zh) 2021-08-03
CN113660439A (zh) 2021-11-16
JP6961479B2 (ja) 2021-11-05
KR20180076346A (ko) 2018-07-05

Similar Documents

Publication Publication Date Title
KR102499902B1 (ko) 촬상 장치 및 전자 기기
KR102514007B1 (ko) 촬상 장치, 촬상 장치의 구동 방법, 및 전자 기기
KR102522350B1 (ko) 촬상 장치 및 전자 기기
KR20180051551A (ko) 촬상 장치, 모듈, 전자 기기, 및 촬상 장치의 동작 방법
KR20190032387A (ko) 촬상 장치, 촬상 모듈, 전자 기기, 및 촬상 시스템
CN107040731A (zh) 摄像装置、模块、电子设备及摄像装置的工作方法
JP6982132B2 (ja) 電子機器および撮像装置
JP2025100583A (ja) 撮像装置
CN112425152B (zh) 摄像装置及电子设备
CN112534802B (zh) 摄像装置的工作方法
JP7686648B2 (ja) 撮像装置および電子機器
JP7715641B2 (ja) 撮像装置
WO2021048676A1 (ja) 撮像装置および電子機器

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T13-X000 Administrative time limit extension granted

St.27 status event code: U-3-3-T10-T13-oth-X000

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PX0901 Re-examination

St.27 status event code: A-2-3-E10-E12-rex-PX0901

PX0701 Decision of registration after re-examination

St.27 status event code: A-3-4-F10-F13-rex-PX0701

X701 Decision to grant (after re-examination)
P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

PA0107 Divisional application

St.27 status event code: A-0-1-A10-A17-div-PA0107

St.27 status event code: A-0-1-A10-A16-div-PA0107

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 4