CN113660439A - 摄像装置及电子设备 - Google Patents

摄像装置及电子设备 Download PDF

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Publication number
CN113660439A
CN113660439A CN202110805838.8A CN202110805838A CN113660439A CN 113660439 A CN113660439 A CN 113660439A CN 202110805838 A CN202110805838 A CN 202110805838A CN 113660439 A CN113660439 A CN 113660439A
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China
Prior art keywords
transistor
register
layer
parameter
circuit
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Pending
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CN202110805838.8A
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Chinese (zh)
Inventor
池田隆之
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/709—Circuitry for control of the power supply
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/532—Control of the integration time by controlling global shutters in CMOS SSIS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767—Horizontal readout lines, multiplexers or registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Studio Devices (AREA)
  • Image Processing (AREA)
CN202110805838.8A 2016-12-27 2017-12-06 摄像装置及电子设备 Pending CN113660439A (zh)

Applications Claiming Priority (3)

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JP2016252967 2016-12-27
JP2016-252967 2016-12-27
CN201711274991.2A CN108307131B (zh) 2016-12-27 2017-12-06 摄像装置及电子设备

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JP (2) JP6961479B2 (https=)
KR (2) KR102499902B1 (https=)
CN (2) CN113660439A (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7007257B2 (ja) 2016-03-18 2022-01-24 株式会社半導体エネルギー研究所 撮像装置、モジュール、および電子機器
KR102769490B1 (ko) 2018-06-21 2025-02-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치 및 그 동작 방법, 및 전자 기기
CN118922006A (zh) 2018-07-17 2024-11-08 索尼半导体解决方案公司 摄像元件、层叠型摄像元件和固态摄像装置
JP7298373B2 (ja) * 2019-07-31 2023-06-27 株式会社リコー 光電変換装置、画像読取装置、及び画像形成装置
JP7693550B2 (ja) * 2019-09-11 2025-06-17 株式会社半導体エネルギー研究所 撮像装置
WO2021048683A1 (ja) 2019-09-13 2021-03-18 株式会社半導体エネルギー研究所 撮像装置、撮像モジュール、電子機器及び撮像方法
JP2021072313A (ja) * 2019-10-29 2021-05-06 キオクシア株式会社 半導体記憶装置
JP7414569B2 (ja) * 2020-02-12 2024-01-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
JP2024139129A (ja) * 2023-03-27 2024-10-09 株式会社ジャパンディスプレイ マトリックス基板及び画像表示装置

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070080969A1 (en) * 2002-02-28 2007-04-12 Shinichi Yamaura Image processing circuit, combined image processing circuit, and image forming apparatus
CN101052099A (zh) * 2006-04-03 2007-10-10 索尼株式会社 摄像装置及其光源推断装置
CN101266754A (zh) * 2007-03-16 2008-09-17 索尼株式会社 显示装置、显示装置的驱动方法和电子设备
US20110161574A1 (en) * 2009-12-24 2011-06-30 Megachips Corporation Setting control apparatus and method for operating setting control apparatus
CN102301413A (zh) * 2009-02-02 2011-12-28 松下电器产业株式会社 影像信号处理装置、影像信号处理系统及影像信号处理方法
US20120272017A1 (en) * 2011-04-19 2012-10-25 Samsung Electronics Co., Ltd. Nonvolatile memory device and nonvolatile memory system and random data read method thereof
US20120306533A1 (en) * 2011-05-31 2012-12-06 Semiconductor Energy Laboratories, Co., Ltd. Semiconductor device
US20130134416A1 (en) * 2011-11-30 2013-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US20140025978A1 (en) * 2012-07-20 2014-01-23 Semiconductor Energy Laboratory Co., Ltd. Power supply control circuit and signal processing circuit
JP2016127471A (ja) * 2015-01-06 2016-07-11 株式会社半導体エネルギー研究所 撮像装置、及びそれを備える電気機器

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100456441B1 (ko) * 2002-01-18 2004-11-09 주식회사 휴맥스 저장 매체에 저장된 서비스의 중지 시점부터 서비스를제공하는 방법 및 장치
JP3810419B2 (ja) * 2004-12-07 2006-08-16 松下電器産業株式会社 再構成可能な信号処理プロセッサ
JP4450737B2 (ja) * 2005-01-11 2010-04-14 富士通株式会社 半導体集積回路
JP4536618B2 (ja) * 2005-08-02 2010-09-01 富士通セミコンダクター株式会社 リコンフィグ可能な集積回路装置
JP5064747B2 (ja) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
JP5078246B2 (ja) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
US7863930B2 (en) * 2007-11-13 2011-01-04 Panasonic Corporation Programmable device, control method of device and information processing system
KR101645680B1 (ko) 2009-11-06 2016-08-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
EP2887395B1 (en) 2009-11-20 2019-05-08 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile latch circuit and logic circuit, and semiconductor device using the same
KR102459005B1 (ko) 2009-12-25 2022-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 메모리 장치, 반도체 장치, 및 전자 장치
KR101473684B1 (ko) 2009-12-25 2014-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011089808A1 (en) * 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI525614B (zh) 2011-01-05 2016-03-11 半導體能源研究所股份有限公司 儲存元件、儲存裝置、及信號處理電路
JP5883699B2 (ja) * 2011-04-13 2016-03-15 株式会社半導体エネルギー研究所 プログラマブルｌｓｉ
TWI536502B (zh) 2011-05-13 2016-06-01 半導體能源研究所股份有限公司 記憶體電路及電子裝置
JP6046514B2 (ja) 2012-03-01 2016-12-14 株式会社半導体エネルギー研究所 半導体装置
US8754693B2 (en) 2012-03-05 2014-06-17 Semiconductor Energy Laboratory Co., Ltd. Latch circuit and semiconductor device
JP6227890B2 (ja) 2012-05-02 2017-11-08 株式会社半導体エネルギー研究所 信号処理回路および制御回路
US8785928B2 (en) 2012-05-31 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9343120B2 (en) 2012-06-01 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. High speed processing unit with non-volatile register
WO2014061761A1 (en) 2012-10-17 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Microcontroller and method for manufacturing the same
JP5604700B2 (ja) * 2012-10-29 2014-10-15 弘一 関根 動き検出用撮像装置、動き検出カメラおよび動き検出システム
KR102112364B1 (ko) * 2012-12-06 2020-05-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US20150008428A1 (en) * 2013-07-08 2015-01-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR20150014007A (ko) * 2013-07-25 2015-02-06 삼성전자주식회사 이미지 센서 및 이를 포함하는 촬상 장치
JP6541360B2 (ja) 2014-02-07 2019-07-10 株式会社半導体エネルギー研究所 半導体装置
JP6489757B2 (ja) * 2014-04-08 2019-03-27 キヤノン株式会社 画像処理装置、その制御方法及びプログラム
US9912897B2 (en) 2015-05-11 2018-03-06 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
CN205193998U (zh) * 2015-10-30 2016-04-27 重庆金鑫智慧科技有限公司 一种物联网的家居警报装置
US20170365209A1 (en) 2016-06-17 2017-12-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070080969A1 (en) * 2002-02-28 2007-04-12 Shinichi Yamaura Image processing circuit, combined image processing circuit, and image forming apparatus
CN101052099A (zh) * 2006-04-03 2007-10-10 索尼株式会社 摄像装置及其光源推断装置
CN101266754A (zh) * 2007-03-16 2008-09-17 索尼株式会社 显示装置、显示装置的驱动方法和电子设备
CN102301413A (zh) * 2009-02-02 2011-12-28 松下电器产业株式会社 影像信号处理装置、影像信号处理系统及影像信号处理方法
US20110161574A1 (en) * 2009-12-24 2011-06-30 Megachips Corporation Setting control apparatus and method for operating setting control apparatus
US20120272017A1 (en) * 2011-04-19 2012-10-25 Samsung Electronics Co., Ltd. Nonvolatile memory device and nonvolatile memory system and random data read method thereof
US20120306533A1 (en) * 2011-05-31 2012-12-06 Semiconductor Energy Laboratories, Co., Ltd. Semiconductor device
US20130134416A1 (en) * 2011-11-30 2013-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US20140025978A1 (en) * 2012-07-20 2014-01-23 Semiconductor Energy Laboratory Co., Ltd. Power supply control circuit and signal processing circuit
JP2016127471A (ja) * 2015-01-06 2016-07-11 株式会社半導体エネルギー研究所 撮像装置、及びそれを備える電気機器

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JP7185744B2 (ja) 2022-12-07
US10455174B2 (en) 2019-10-22
KR20230026364A (ko) 2023-02-24
KR102499902B1 (ko) 2023-02-16
JP2018107799A (ja) 2018-07-05
JP2022009069A (ja) 2022-01-14
US20180184030A1 (en) 2018-06-28
CN108307131A (zh) 2018-07-20
CN108307131B (zh) 2021-08-03
JP6961479B2 (ja) 2021-11-05
KR20180076346A (ko) 2018-07-05

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