KR102469388B1 - 이간 장치 및 이간 방법 - Google Patents

이간 장치 및 이간 방법 Download PDF

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Publication number
KR102469388B1
KR102469388B1 KR1020180033702A KR20180033702A KR102469388B1 KR 102469388 B1 KR102469388 B1 KR 102469388B1 KR 1020180033702 A KR1020180033702 A KR 1020180033702A KR 20180033702 A KR20180033702 A KR 20180033702A KR 102469388 B1 KR102469388 B1 KR 102469388B1
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KR
South Korea
Prior art keywords
adhesive sheet
adherends
holding
movement
holding means
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Application number
KR1020180033702A
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English (en)
Korean (ko)
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KR20180123962A (ko
Inventor
요시아키 스기시타
Original Assignee
린텍 가부시키가이샤
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Application filed by 린텍 가부시키가이샤 filed Critical 린텍 가부시키가이샤
Publication of KR20180123962A publication Critical patent/KR20180123962A/ko
Application granted granted Critical
Publication of KR102469388B1 publication Critical patent/KR102469388B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67138—Apparatus for wiring semiconductor or solid state device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020180033702A 2017-05-10 2018-03-23 이간 장치 및 이간 방법 KR102469388B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2017-093948 2017-05-10
JP2017093948A JP6880433B2 (ja) 2017-05-10 2017-05-10 離間装置および離間方法

Publications (2)

Publication Number Publication Date
KR20180123962A KR20180123962A (ko) 2018-11-20
KR102469388B1 true KR102469388B1 (ko) 2022-11-21

Family

ID=64326114

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180033702A KR102469388B1 (ko) 2017-05-10 2018-03-23 이간 장치 및 이간 방법

Country Status (4)

Country Link
JP (1) JP6880433B2 (ja)
KR (1) KR102469388B1 (ja)
CN (1) CN108878282B (ja)
TW (1) TWI743321B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7483561B2 (ja) 2020-08-26 2024-05-15 株式会社ディスコ エキスパンド方法及びエキスパンド装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009094126A (ja) 2007-10-04 2009-04-30 Furukawa Electric Co Ltd:The チップのピックアップ方法
JP2016021513A (ja) * 2014-07-15 2016-02-04 三菱電機株式会社 半導体ウエハエキスパンド装置及び方法
JP2016081976A (ja) * 2014-10-10 2016-05-16 リンテック株式会社 離間装置および離間方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4793981B2 (ja) 2005-10-04 2011-10-12 リンテック株式会社 エキスパンド装置の制御方法とその制御装置
WO2010119506A1 (ja) * 2009-04-14 2010-10-21 パイオニア株式会社 電子部品の分離装置及び方法
JP6052304B2 (ja) * 2012-12-26 2016-12-27 日立化成株式会社 エキスパンド方法、半導体装置の製造方法、及び半導体装置
JP2015177060A (ja) * 2014-03-14 2015-10-05 株式会社東芝 半導体製造装置および半導体装置の製造方法
JP2015204362A (ja) * 2014-04-14 2015-11-16 株式会社ディスコ チップ間隔維持方法
JP6408366B2 (ja) * 2014-12-05 2018-10-17 リンテック株式会社 離間装置および離間方法
JP6401608B2 (ja) * 2014-12-26 2018-10-10 リンテック株式会社 離間装置および離間方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009094126A (ja) 2007-10-04 2009-04-30 Furukawa Electric Co Ltd:The チップのピックアップ方法
JP2016021513A (ja) * 2014-07-15 2016-02-04 三菱電機株式会社 半導体ウエハエキスパンド装置及び方法
JP2016081976A (ja) * 2014-10-10 2016-05-16 リンテック株式会社 離間装置および離間方法

Also Published As

Publication number Publication date
TWI743321B (zh) 2021-10-21
JP6880433B2 (ja) 2021-06-02
KR20180123962A (ko) 2018-11-20
CN108878282A (zh) 2018-11-23
JP2018190885A (ja) 2018-11-29
CN108878282B (zh) 2023-08-11
TW201901854A (zh) 2019-01-01

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