KR102370517B1 - 액 처리 장치, 액 처리 방법 및 기억 매체 - Google Patents

액 처리 장치, 액 처리 방법 및 기억 매체 Download PDF

Info

Publication number
KR102370517B1
KR102370517B1 KR1020140163311A KR20140163311A KR102370517B1 KR 102370517 B1 KR102370517 B1 KR 102370517B1 KR 1020140163311 A KR1020140163311 A KR 1020140163311A KR 20140163311 A KR20140163311 A KR 20140163311A KR 102370517 B1 KR102370517 B1 KR 102370517B1
Authority
KR
South Korea
Prior art keywords
substrate
nozzle
liquid
wafer
main nozzle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020140163311A
Other languages
English (en)
Korean (ko)
Other versions
KR20150060556A (ko
Inventor
준 노나카
소고 미조타
다츠야 나가마츠
다이슈케 사이키
가즈히로 데라오카
다카시 야부타
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20150060556A publication Critical patent/KR20150060556A/ko
Application granted granted Critical
Publication of KR102370517B1 publication Critical patent/KR102370517B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Coating Apparatus (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
KR1020140163311A 2013-11-25 2014-11-21 액 처리 장치, 액 처리 방법 및 기억 매체 Active KR102370517B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013243005A JP6064875B2 (ja) 2013-11-25 2013-11-25 液処理装置、液処理方法及び記憶媒体
JPJP-P-2013-243005 2013-11-25

Publications (2)

Publication Number Publication Date
KR20150060556A KR20150060556A (ko) 2015-06-03
KR102370517B1 true KR102370517B1 (ko) 2022-03-03

Family

ID=53183023

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140163311A Active KR102370517B1 (ko) 2013-11-25 2014-11-21 액 처리 장치, 액 처리 방법 및 기억 매체

Country Status (4)

Country Link
US (1) US10236192B2 (enExample)
JP (1) JP6064875B2 (enExample)
KR (1) KR102370517B1 (enExample)
TW (1) TWI585881B (enExample)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6064875B2 (ja) * 2013-11-25 2017-01-25 東京エレクトロン株式会社 液処理装置、液処理方法及び記憶媒体
JP6404189B2 (ja) * 2015-08-07 2018-10-10 東京エレクトロン株式会社 基板液処理装置、基板液処理方法及び記憶媒体
JP6726430B2 (ja) * 2016-01-25 2020-07-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
KR101817211B1 (ko) * 2016-05-27 2018-01-11 세메스 주식회사 기판 처리 장치 및 방법
KR101914479B1 (ko) * 2016-08-31 2018-11-06 세메스 주식회사 기판 처리 장치 및 방법
JP6815799B2 (ja) * 2016-09-13 2021-01-20 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2018110186A (ja) * 2017-01-04 2018-07-12 東京エレクトロン株式会社 液処理装置及び液処理方法
KR102245342B1 (ko) * 2017-02-28 2021-04-27 가부시키가이샤 스크린 홀딩스 기판 처리 장치 및 기판 처리 방법
JP6910164B2 (ja) * 2017-03-01 2021-07-28 東京エレクトロン株式会社 基板処理装置および基板処理方法
US10875149B2 (en) * 2017-03-30 2020-12-29 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for timed dispensing various slurry components
JP6923344B2 (ja) 2017-04-13 2021-08-18 株式会社Ｓｃｒｅｅｎホールディングス 周縁処理装置および周縁処理方法
JP6924614B2 (ja) * 2017-05-18 2021-08-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
CN112514035B (zh) * 2018-07-26 2024-07-05 东京毅力科创株式会社 基板处理系统和基板处理方法
CN111081585B (zh) * 2018-10-18 2022-08-16 北京北方华创微电子装备有限公司 喷淋装置及清洗设备
JP7169865B2 (ja) * 2018-12-10 2022-11-11 東京エレクトロン株式会社 基板処理装置および基板処理方法
TWI820263B (zh) * 2018-12-14 2023-11-01 日商東京威力科創股份有限公司 基板液處理裝置及基板液處理方法
JP7308048B2 (ja) * 2019-02-15 2023-07-13 株式会社Ｓｃｒｅｅｎホールディングス 液処理装置および液処理方法
JP7390837B2 (ja) * 2019-09-27 2023-12-04 東京エレクトロン株式会社 基板処理方法および基板処理装置
US12387939B2 (en) * 2019-12-16 2025-08-12 Tokyo Electron Limited Substrate processing method
WO2021133564A1 (en) * 2019-12-27 2021-07-01 Veeco Instruments Inc. An apparatus and method for die stack flux removal
JP7362505B2 (ja) * 2020-02-20 2023-10-17 東京エレクトロン株式会社 基板液処理装置及び液体吐出評価方法
JP7453020B2 (ja) * 2020-03-06 2024-03-19 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
TWI886306B (zh) * 2020-07-28 2025-06-11 日商東京威力科創股份有限公司 基板處理裝置及基板處理方法
JP7486372B2 (ja) * 2020-07-29 2024-05-17 東京エレクトロン株式会社 基板処理装置、及び基板処理方法
CN116438633A (zh) * 2020-11-05 2023-07-14 东京毅力科创株式会社 基板处理装置、基板处理方法以及计算机可读取的记录介质
KR102877342B1 (ko) * 2021-01-11 2025-10-30 삼성디스플레이 주식회사 식각 장치 및 이를 이용한 식각 방법
JP2023047615A (ja) * 2021-09-27 2023-04-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置及び基板処理方法
CN114420552B (zh) * 2021-12-31 2025-10-03 上海至纯洁净系统科技股份有限公司 一种基于流场控制的高温蚀刻方法
JP2024047495A (ja) 2022-09-26 2024-04-05 株式会社Ｓｃｒｅｅｎホールディングス 学習装置、情報処理装置、基板処理装置、基板処理システム、学習方法および処理条件決定方法
JP2024124092A (ja) 2023-03-02 2024-09-12 株式会社Ｓｃｒｅｅｎホールディングス 学習装置、情報処理装置、基板処理装置、学習モデル生成方法および処理条件決定方法
US20240399425A1 (en) * 2023-06-02 2024-12-05 Applied Materials, Inc. Method and apparatus to enable droplet jet cleaning at elevated temperature

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006093497A (ja) * 2004-09-27 2006-04-06 Dainippon Screen Mfg Co Ltd 基板洗浄装置
US20090004876A1 (en) 2006-01-31 2009-01-01 Sakae Koyata Method for Etching Single Wafer
US20100101497A1 (en) 2008-10-29 2010-04-29 Takashi Izuta Substrate treatment apparatus

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07245287A (ja) 1994-03-04 1995-09-19 Fuji Xerox Co Ltd ウエットエッチング装置
JPH11165114A (ja) * 1997-12-05 1999-06-22 Dainippon Screen Mfg Co Ltd 枚葉式基板処理装置
US6516815B1 (en) * 1999-07-09 2003-02-11 Applied Materials, Inc. Edge bead removal/spin rinse dry (EBR/SRD) module
US6805769B2 (en) * 2000-10-13 2004-10-19 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus
JP3585437B2 (ja) * 2000-11-22 2004-11-04 株式会社荏原製作所 ルテニウム膜のエッチング方法
CN100423205C (zh) * 2003-11-18 2008-10-01 东京毅力科创株式会社 基板清洗方法、基板清洗装置
JP4760255B2 (ja) 2005-09-21 2011-08-31 富士ゼロックス株式会社 ネットワークプリントシステム
JP4708243B2 (ja) * 2006-03-28 2011-06-22 東京エレクトロン株式会社 液処理装置および液処理方法ならびにコンピュータ読取可能な記憶媒体
JP2008060302A (ja) * 2006-08-31 2008-03-13 Sokudo:Kk 基板処理装置
JP4638402B2 (ja) * 2006-10-30 2011-02-23 大日本スクリーン製造株式会社 二流体ノズル、ならびにそれを用いた基板処理装置および基板処理方法
JP2008218545A (ja) 2007-03-01 2008-09-18 Sumco Corp ウェーハの枚葉式エッチング装置
JP4988616B2 (ja) 2007-08-21 2012-08-01 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
US20090107519A1 (en) * 2007-10-30 2009-04-30 Sokudo Co., Ltd. Method and system for chemically enhanced laser trimming of substrate edges
US20090214985A1 (en) * 2008-02-27 2009-08-27 Tokyo Electron Limited Method for reducing surface defects on patterned resist features
JP5173500B2 (ja) * 2008-03-11 2013-04-03 大日本スクリーン製造株式会社 処理液供給装置およびそれを備えた基板処理装置
US20090241995A1 (en) * 2008-03-31 2009-10-01 Tokyo Electron Limited Substrate cleaning method and apparatus
JP5151629B2 (ja) * 2008-04-03 2013-02-27 東京エレクトロン株式会社 基板洗浄方法、基板洗浄装置、現像方法、現像装置及び記憶媒体
JP5349944B2 (ja) * 2008-12-24 2013-11-20 株式会社荏原製作所 基板処理装置の液飛散防止カップ、基板処理装置、及びその運転方法
JP5634341B2 (ja) 2011-06-29 2014-12-03 東京エレクトロン株式会社 めっき処理装置、めっき処理方法および記憶媒体
JP5693439B2 (ja) * 2011-12-16 2015-04-01 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
JP6100487B2 (ja) * 2012-08-20 2017-03-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6183705B2 (ja) * 2013-01-15 2017-08-23 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6064875B2 (ja) * 2013-11-25 2017-01-25 東京エレクトロン株式会社 液処理装置、液処理方法及び記憶媒体

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006093497A (ja) * 2004-09-27 2006-04-06 Dainippon Screen Mfg Co Ltd 基板洗浄装置
US20090004876A1 (en) 2006-01-31 2009-01-01 Sakae Koyata Method for Etching Single Wafer
US20100101497A1 (en) 2008-10-29 2010-04-29 Takashi Izuta Substrate treatment apparatus

Also Published As

Publication number Publication date
KR20150060556A (ko) 2015-06-03
JP2015103656A (ja) 2015-06-04
JP6064875B2 (ja) 2017-01-25
US20150147888A1 (en) 2015-05-28
TW201535561A (zh) 2015-09-16
US10236192B2 (en) 2019-03-19
TWI585881B (zh) 2017-06-01

Similar Documents

Publication Publication Date Title
KR102370517B1 (ko) 액 처리 장치, 액 처리 방법 및 기억 매체
US11610790B2 (en) Substrate processing apparatus
US8225737B2 (en) Coating apparatus and method
US10748790B2 (en) Substrate processing apparatus and substrate processing method
CN109216236B (zh) 基片处理装置、基片处理方法和存储介质
CN107706131B (zh) 液处理方法、基板处理装置以及存储介质
US10185220B2 (en) Substrate processing method, substrate processing apparatus, and non-transitory computer-readable medium
JP6865626B2 (ja) 基板処理装置および基板処理方法
JP6258122B2 (ja) 基板液処理装置、基板液処理方法及び記憶媒体
JP6888393B2 (ja) エッチング装置、エッチング方法及び記憶媒体
US10707098B2 (en) Substrate processing apparatus, substrate processing method and memory medium
JP6203667B2 (ja) 基板液処理装置及び基板液処理方法
JP6304364B2 (ja) 液処理装置、液処理方法及び記憶媒体
KR102267333B1 (ko) 기판 처리 장치 및 기판 처리 방법 그리고 기판 처리 프로그램을 기록한 기록 매체
JP2016157851A (ja) 基板処理装置
JP2019054104A (ja) 基板処理装置、基板処理方法および記憶媒体
JP2016157853A (ja) 基板処理装置

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20141121

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20190819

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20141121

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20210222

Patent event code: PE09021S01D

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

Comment text: Final Notice of Reason for Refusal

Patent event date: 20210705

Patent event code: PE09021S02D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20211201

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20220228

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20220228

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20250108

Start annual number: 4

End annual number: 4